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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8

GaAs Substrate Recycling Using in-situ Deposited NaCl Layers via Molecular Beam Epitaxy

This work presents an alternative method to conventional III-V substrate recycling methods via growth of NaCl on nearly-lattice matched GaAs (001) substrates. Reflection high energy electron diffraction and transmission electron microscopy confirm an epitaxial relationship between the NaCl layers and the underlying GaAs. If the sample is heated too much prior to GaAs deposition, the NaCl fully desorbs from the surface. The quality of the deposition of GaAs on NaCl ranges from amorphous at low temperature to polycrystalline at intermediate temperatures. Exposure to electron beams during growth results in larger and (001) textured grains. The substrate is separated from the GaAs film in seconds via submersion in water, revealing a substrate surface comparable to the original.

electron beams↗

Synthesis of antiferromagnetic Weyl semimetal Mn 3 Ge on insulating substrates by electron beam assisted molecular beam epitaxy

The antiferromagnetic kagome semimetals Mn 3 X (X = Ge, Sn, Ga) are of great interest due to properties arising from their Berry curvature, such as large anomalous Nernst and anomalous Hall coefficients, and spin to charge conversion efficiencies at ambient temperatures. However, the synthesis of epitaxial thin films of Mn 3 Ge in the desired hexagonal phase has been challenging because they do not wet insulating substrates, necessitating the use of a metallic buffer layer. Furthermore, a ferrimagnetic tetragonal phase also forms readily under typical growth conditions, interfering with hexagonal phase properties. We have synthesized atomically smooth and continuous epitaxial thin films of hexagonal Mn 3 Ge directly on insulating LaAlO 3 (111) substrates using electron beam assisted molecular beam epitaxy, using a three-step process that mitigates the formation of the tetragonal phase. The anomalous Nernst coefficient is found to be more than six times larger in our films than in sputtered thin films of Mn 3 Ge and significantly larger than that of Fe. Our approach can be used to grow thin layers of kagome materials, without interference from a buffer layer in transport properties, and may be applicable to a broader range of materials with large surface energies that do not grow readily on insulating substrates.

36 MATERIALS SCIENCE↗

Test beam study of SiPM-on-tile configurations

Light yield and spatial uniformity for a large variety of configurations of scintillator tiles were studied. The light from each scintillator was collected by a Silicon Photomultiplier (SiPM) directly viewing the produced scintillation light (SiPM-on-tile technique). The varied parameters included tile transverse size, tile thickness, tile wrapping material, scintillator composition, and SiPM model. Furthermore, these studies were performed using 120 GeV protons at the Fermilab Test Beam Facility. External tracking allowed the position of each proton penetrating a tile to be measured. The results were compared to a GEANT4 simulation of each configuration of scinitillator, wrapping, and SiPM.

47 OTHER INSTRUMENTATION↗

Study of Particle Loss in Synchrotron Phase Space Injection for ESR Using Weak-Strong Beam-Beam Simulation with Nonlinear Lattice

In this report, we use tracking simulations to investigate synchrotron phase space injection for electron accumulation in the electron storage ring of the Electron Ion Collider. Our simulation model accounts for both beam-beam interactions and lattice nonlinearities. Specifically, we examine how particle loss is influenced by various parameters. Additionally, we conduct a theoretical analysis and derive an analytical formula for the rapid evaluation of particle loss. Our results demon strate the feasibility of synchrotron phase-space injection for the electron storage ring and provide insights to guide parameter selection for the design of the injection line.

43 PARTICLE ACCELERATORS↗

Neutral beams for the burning plasma era: Simulations and modeling of deuterium ion beams for plasma heating (CRADA Final Report)

Together with Realta Fusion, we set up several simulation scenarios and ran simulations using the WarpX code which is developed by LBNL and especially by members of the LBNL team. We investigated beam transport and beam neutralization and ran optimization and benchmark simulations. To achieve this, several new features were added to the warpX code. These code additions will also be beneficial to other users of warpX including several fusion companies and researchers at National Laboratories. Furthermore, we supported Realta Fusion in setting up their own instances of WarpX. We presented our results at the American Physical Society Division of Plasma Physics meeting and are in the process of writing a publication that will be submitted to a peer-reviewed journal to share our results with the broader community.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Oscillation of laser-beam intensity as observed with beam splitters

Characteristics of nearly perfectly flat beam splitter for observing laser pulse shapes are discussed. Disadvantages of conventional instruments for observing properties of laser beams are described. Effects of high frequency noise on accuracy of measurement are reported.

Kuehn, D. M.↗

Electron beam, laser beam and plasma arc welding studies

This program was undertaken as an initial step in establishing an evaluation framework which would permit a priori selection of advanced welding processes for specific applications. To this end, a direct comparison of laser beam, electron beam and arc welding of Ti-6Al-4V alloy was undertaken. Ti-6Al-4V was selected for use in view of its established welding characteristics and its importance in aerospace applications.

Banas, C. M.↗

Packet communication system for a multi-beam beam switched satellite repeater

This paper presents the design of a packet-switched communication system using a multi-beam, beam switched satellite repeater. The protocol provides a combination of random access via Slotted ALOHA techniques and demand assigned access using collision requests. This allows efficient bandwidth usage and low average delays. Minimization of earth station cost was a major objective. This was achieved by transferring the bulk of the system complexity to the satellite repeater and the (ground) network controller. This centrally controlled protocol would allow greater system stability and would permit system reconfiguration in response to changes in traffic intensity. Sufficient signalling is also incorporated to allow both rate diversity to combat fading and timing corrections to account for satellite drift.

Bose, S. K.↗

Beam-plasma instabilities and the beam-plasma discharge

Using a new waves on magnetized beams and turbulence (WOMBAT) 0-450 eV electron gun, measurements bearing on the generation of beam-plasma discharge (BPD) are made. The new gun has a narrower divergence angle than the old, and the BPD ignition current is found to be proportional to the cross-sectional area of the plasma. The high-frequency instabilities are identified with the two Trivelpiece-Gould modes, (1959). The upper frequency is identified as a Cerenkov resonance with the upper Trivelpiece-Gould mode, and the lower frequency with a cyclotron resonance with the lower mode, in agreement with theoretical expectations. Convective growth rates are found to be small. A mechanism involving the conversion of a convective instability to an absolute one by trapping of the unstable waves in the density perturbations of the low-frequency waves, is suggested for the low-frequency wave control of the onset of the high frequency precursors to the BPD.

Kellogg, P. J.↗

Electron beam source molecular beam epitaxial growth of analog graded Al(x)Ga(1-x)As ballistic transistors

A new method has been developed for the growth of graded band-gap Al(x)Ga(1-x)As alloys by molecular beam epitaxy which is based upon electron beam evaporation of the group III elements. The metal fluxes are measured and feedback controlled using a modulated ion gauge sensor. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables growth of variable band-gap III-V alloys with arbitrary composition profiles. This new technique is demonstrated by synthesis of analog graded Al(x)Ga(1-x)As unipolar ballistic electron transistors.

Malik, Roger J.↗