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At least 145 records · Page 8

An analytical model for analyzing the current-voltage characteristics of bulk heterojunction organic solar cells

An analytical model for analyzing the current-voltage (J-V) characteristics of bulk heterojunction (BHJ) organic solar cells is developed by incorporating exponential photon absorption, dissociation efficiency of bound electron-hole pairs (EHPs), carrier trapping, and carrier drift and diffusion in the photon absorption layer. Modified Braun's model is used to compute the electric field-dependent dissociation efficiency of the bound EHPs. The charge carrier concentrations and hence the photocurrent are calculated by solving the carrier continuity equation for both holes and electrons in the organic layer. The overall load current is calculated considering the actual solar spectrum and voltage dependent forward dark current. The model is verified by published experimental results. The efficiency of the P3HT:PCBM based solar cells critically depends on the dissociation of bound EHPs. On the other hand, cells made of a blend of the conjugated polymer (PCDTBT) with the soluble fullerene derivative (PCBM) show nearly unity dissociation efficiency, and their cell efficiency strongly depends on the charge collection efficiency. The effects of carrier lifetimes on the performance of PCDTBT solar cells have also been studied. The model is also used to investigate the effect of titanium oxide (TiO{sub x}) layer (at the back contact) on the J-V characteristics of PCDTBT solar cells. The results of this paper indicate that improvement of charge carrier transport in PCDTBT:PCBM blend and dissociation of bound EHPs in P3HT:PCBM blend are extremely important to increase the power conversion efficiency of the respective BHJ solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Application of the SEM to the measurement of solar cell parameters

Techniques are described which make use of the SEM to measure the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Weizer, V. G.↗

Application of the SEM to the measurement of solar cell parameters

A pair of techniques are described which make use of the SEM to measure, respectively, the minority carrier diffusion length and the metallurgical junction depth in silicon solar cells. The former technique permits the measurement of the true bulk diffusion length through the application of highly doped field layers to the back surfaces of the cells being investigated. The technique yields an absolute value of the diffusion length from a knowledge of the collected fraction of the injected carriers and the cell thickness. It is shown that the secondary emission contrast observed in the SEM on a reverse-biased diode can depict the location of the metallurgical junction if the diode has been prepared with the proper beveled geometry. The SEM provides the required contrast and the option of high magnification, permitting the measurement of extremely shallow junction depths.

Weizer, V. G.↗

Advances in high output voltage silicon solar cells

Solar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.

Arndt, R. A.↗

Hybrid laminar flow control tests in the Boeing Research Wind Tunnel

The hybrid laminar flow control (HLFC) concept has undergone wind tunnel testing at near full-scale Reynolds number on an infinite wing of 30-deg sweep on which boundary-layer suction was furnished over the first 20 percent of chord of the upper surface. Depending on the external pressure distribution, the HLFC extended the laminarity of the boundary layer as far back as 45 percent of chord; this corresponds to a transition Reynolds number of about 11 million. The maximum chordwise extent of laminar run was found to be insensitive to the suction level over a wide range.

Parikh, P. G.↗

Recent Progress in Adjustable X-ray Optics for Astronomy

Two adjustable X-ray optics approaches are being developed for thin grazing incidence optics for astronomy. The first approach employs thin film piezoelectric material sputter deposited as a continuous layer on the back of thin, lightweight Wolter-I mirror segments. The piezoelectric material is used to correct mirror figure errors from fabrication, mounting/alignment, and any ground to orbit changes. The goal of this technology is to produce Wolter mirror segment pairs corrected to 0.5 arc sec image resolution. With the combination of high angular resolution and lightweight, this mirror technology is suitable for the Square Meter Arc Second Resolution Telescope for X-rays (SMART-X) mission concept.. The second approach makes use of electrostrictive adjusters and full shell nickel/cobalt electroplated replication mirrors. An array of radial adjusters is used to deform the full shells to correct the lowest order axial and azimuthal errors, improving imaging performance from the 10 - 15 arc sec level to ~ 5 arc sec. We report on recent developments in both technologies. In particular, we discuss the use of insitu strain gauges on the thin piezo film mirrors for use as feedback on piezoelectric adjuster functionality, including their use for on-orbit figure correction. We also report on the first tests of full shell nickel/cobalt mirror correction with radial adjusters.

Reid, Paul B.↗

Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps

Modeling a monolithic, multi-bandgap, tandem, solar photovoltaic converter or thermophotovoltaic converter by constraining the bandgap value for the bottom subcell to no less than a particular value produces an optimum combination of subcell bandgaps that provide theoretical energy conversion efficiencies nearly as good as unconstrained maximum theoretical conversion efficiency models, but which are more conducive to actual fabrication to achieve such conversion efficiencies than unconstrained model optimum bandgap combinations. Achieving such constrained or unconstrained optimum bandgap combinations includes growth of a graded layer transition from larger lattice constant on the parent substrate to a smaller lattice constant to accommodate higher bandgap upper subcells and at least one graded layer that transitions back to a larger lattice constant to accommodate lower bandgap lower subcells and to counter-strain the epistructure to mitigate epistructure bowing.

14 SOLAR ENERGY↗

Mirrors for High Resolution X-Ray Optics---Figure Preserving IR/PT Coating

Coating stress of 10 - 20 nm of Ir is sufficiently high to distort the figure of arc-second thin lightweight mirrors. For iridium: --Stress sigma ~ 4 GPa for 15 nm film implies 60 Nm integrated stress-- Need less than 3 N/m (or stress less than 200 MPa) for sub-arcsecond optics. Basic Approaches for Mitigation. A. Annealing the film-- Glass can be heat up to 400 C without distortion. Silicon is even more resistant.-- It was found that recovery is limited by residual thermal stress from taking the mirror down from high T. B. Coating bi-layer films with compressive stress with tensile stress. C. Front-and-back coating with magnetron sputtering or atomic layer deposition-- Sputtering involve spanning of substrates. Geometric difference in setup (convexness/concaveness of curved mirrors) does not permit precise front-and-back matching-- Atomic layer deposition can provide a uniform deposition front and back simultaneously.

MIRRORS FOR HIGH RESOLUTION X-RAY OPTICS↗

Optical and Electronic Losses Arising from Physically Mixed Interfacial Layers in Perovskite Solar Cells

Perovskite solar cell device performance is affected by optical and electronic losses. To minimize these losses in solar cells, it is important to identify their sources. Here, we report the optical and electronic losses arising from physically mixed interfacial layers between the adjacent component materials in highly efficient two terminal (2T) all-perovskite tandem, single junction wide-bandgap, and single junction narrow-bandgap perovskite-based solar cells. Physically mixed interfacial layers as the sources of optical and electronic losses are identified from spectroscopic ellipsometry measurements and data analysis followed by comparisons of simulated and measured external quantum efficiency spectra. Parasitic absorbance in the physically mixed regions between silver metal electrical contacts and electron transport layers (ETLs) near the back contact and a physical mixture of commercial indium tin oxide and hole transport layers (HTL) near the front electrical contact lead to substantial optical loss. Here, a lower-density void + perovskite nucleation layer formed during perovskite deposition at the interface between the perovskite absorber layer and the HTL causes electronic losses due to incomplete collection of photogenerated carriers likely originating from poor coverage and passivation of the initially nucleating grains.

14 SOLAR ENERGY↗

Photo-stimulated low electron temperature high current diamond film field emission cathode

An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

47 OTHER INSTRUMENTATION↗

17.2% Efficient CdSexTe1−x solar cell with (InxGa1−x)2O3 emitter on lightweight and flexible glass

High-efficiency, lightweight, and flexible solar cells are sought for a variety of applications particularly when high power density and flexible form factors are desired. Development of solar cells on flexible substrates may also offer production advantages in roll-to-roll or sheet-to-sheet processes. Here, we report device efficiencies of 17.2% and 14.6%, under AM1.5G and AM0 irradiances, respectively, for a flexible, lightweight, CdTe-based solar cell. To advance the efficiency relative to the highest previously reported AM1.5G value of 16.4%, we used an indium gallium oxide (IGO) emitter layer on a cadmium stannate (CTO) transparent conductor, which was deposited on 100-μm thick Corning® Willow® Glass. A sputtered CdSe layer was employed to incorporate Se into a CdTe absorber that was deposited by close-space sublimation, and CuSCN was used as a hole transport layer between the CdTe and the back metal electrode. The IGO and CTO layers remained intact during the high temperature film processing as seen in cross-sectional imaging and elemental mapping. This device configuration offers great promise for building-integrated photovoltaics, space applications, and higher rate manufacturing.

Physics↗

Experiments with an Airfoil from which the Boundary Layer Is Removed by Suction

Our attempts to improve the properties of airfoils by removing the boundary layer by suction, go back to 1922. The object of the suction is chiefly to prevent the detachment of the boundary layer from the surface of the airfoil. At large angles of attack, such detachment prevents the attainment of the great lift promised by the theory, besides greatly increasing the drag, especially of thick airfoils. This report gives results of those experiments.

BOUNDARY LAYER REMOVAL - SUCTION↗

Improved Flow-Field Structures for Direct Methanol Fuel Cells

The direct methanol fuel cell (DMFC) is ideal if high energy-density liquid fuels are required. Liquid fuels have advantages over compressed hydrogen including higher energy density and ease of handling. Although state-of-the-art DMFCs exhibit manageable degradation rates, excessive fuel crossover diminishes system energy and power density. Although use of dilute methanol mitigates crossover, the concomitant lowering of the gross fuel energy density (GFED) demands a complex balance-of-plant (BOP) that includes higher flow rates, external exhaust recirculation, etc. An alternative approach is redesign of the fuel delivery system to accommodate concentrated methanol. NuVant Systems Inc. (NuVant) will maximize the GFED by design and assembly of a DMFC that uses near neat methanol. The approach is to tune the diffusion of highly concentrated methanol (to the anode catalytic layer) to the back-diffusion of water formed at the cathode (i.e. in situ generation of dilute methanol at the anode layer). Crossover will be minimized without compromising the GFED by innovative integration of the anode flow-field and the diffusion layer. The integrated flow-field-diffusion-layers (IFDLs) will widen the current and potential DMFC operating ranges and enable the use of cathodes optimized for hydrogen-air fuel cells.

30 DIRECT ENERGY CONVERSION↗

Interfacial phonon scattering and transmission loss in > 1 µm thick silicon-on-insulator thin films

Scattering of phonons at boundaries of a crystal (grains, surfaces, or solid/solid interfaces) is characterized by the phonon wavelength, the angle of incidence, and the interface roughness, as historically evaluated using a specularity parameter p formulated by Ziman [Electrons and Phonons (Clarendon Press, Oxford, 1960)]. This parameter was initially defined to determine the probability of a phonon specularly reflecting or diffusely scattering from the rough surface of a material. The validity of Ziman's theory as extended to solid/solid interfaces has not been previously validated. Here, to better understand the interfacial scattering of phonons and to test the validity of Ziman's theory, we precisely measured the in-plane thermal conductivity of a series of Si films in silicon-on-insulator (SOI) wafers by time-domain thermoreflectance (TDTR) for a Si film thickness range of 1–10 μm and a temperature range of 100–300 K. The Si/SiO 2 interface roughness was determined to be 0.11±0.04nm using transmission electron microscopy (TEM). Furthermore, we compared our in-plane thermal conductivity measurements to theoretical calculations that combine first-principles phonon transport with Ziman's theory. Calculations using Ziman's specularity parameter significantly overestimate values from the TDTR measurements. We attribute this discrepancy to phonon transmission through the solid/solid interface into the substrate, which is not accounted for by Ziman's theory for surfaces. The phonons that are specularly transmitted into an amorphous layer will be sufficiently randomized by the time they come back to the crystalline Si layer, the effect of which is practically equivalent to a diffuse reflection at the interface. Finally, we derive a simple expression for the specularity parameter at solid/amorphous interfaces and achieve good agreement between calculations and measurement values.

36 MATERIALS SCIENCE↗

Reducing mechanical anisotropy in extrusion-based printed parts

The mechanical performance of 3D printed components is highly dependent upon the orientation of the part relative to the build plane. Specifically for extrusion-based printing systems, the bond between successive layers (z-direction) can be 10-25% weaker than in the printed plane (x-y plane). As advanced applications call for fiber reinforced materials and larger print systems (such as the Big Area Additive Manufacturing system) extend the layer time, mechanical performance in the z-direction can decrease by 75-90%. This paper presents a patent-pending approach for improving mechanical performance in the z-direction by depositing material vertically across multiple layers during the build. The “z-pinning” process involves aligning voids across multiple (n) layers, which are then back-filled in a continuous fashion during the deposition of layer (n+1). The “z-pinning” approach has been demonstrated to be an effective approach for increasing the strength (20% increase) and toughness (200% increase) of printed parts in the zdirection.

36 MATERIALS SCIENCE↗

Growth of high Bi concentration GaAs{sub 1-x}Bi{sub x} by molecular beam epitaxy

The incorporation of Bi is investigated in the molecular beam epitaxy growth of GaAs{sub 1-x}Bi{sub x}. Bi content increases rapidly as the As{sub 2}:Ga flux ratio is lowered to 0.5 and then saturates for lower flux ratios. Growth under Ga and Bi rich conditions shows that Bi content increases strongly with decreasing temperature. A model is proposed where Bi from a wetting layer incorporates through attachment to Ga-terminated surface sites. The weak Ga-Bi bond can be broken thermally, ejecting Bi back into the wetting layer. Highly crystalline films with up to 22% Bi were grown at temperatures as low as 200 Degree-Sign C.

36 MATERIALS SCIENCE↗

Study of relationships of material properties and high efficiency solar cell performance on material composition

The performance improvements obtainable from extending the traditionally thin back-surface-field (BSF) layer deep into the base of silicon solar cells under terrestrial solar illumination (AM1) are analyzed. This extended BSF cell is also known as the back-drift-field cell. About 100 silicon cells were analyzed, each with a different emitter or base dopant impurity distribution whose selection was based on physically anticipated improvements. The four principal performance parameters (the open-circuit voltage, the short-circuit current, the fill factor, and the maximum efficiency) are computed using a FORTRAN program, called Circuit Technique for Semiconductor-device Analysis, CTSA, which numerically solves the six Shockley Equations under AM1 solar illumination at 88.92 mW/cm, at an optimum cell thickness of 50 um. The results show that very significant performance improvements can be realized by extending the BSF layer thickness from 2 um (18% efficiency) to 40 um (20% efficiency).

Sah, C. T.↗

In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells

Abstract Organic–inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge–transport layers. Here, in situ back‐contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits—in contrast with previously studied insulator‐based passivants—the use of a relatively thick passivating layer. It is shown that a flat‐band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.

Tan, Furui↗