Mobility in crystalline and amorphous high polymers deduced from caloric measurements
Kinetic energy of atomic motions for vitreous and crystalline high polymers measured by differential scanning calorimetry and thermal analysis
Wunderlich, B.↗
SEARCH · Engineering Papers
Results for “atomic mobility”
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Electrical and Elastic Properties of Individual Single-Layer Nb 4 C 3 T x MXene Flakes
2D carbides and nitrides (MXenes) are widely recognized for their exceptional promise for numerous applications. However, physical property measurements of their individual monolayers remain very limited despite their importance for revealing the intrinsic physical properties of MXenes. The first mechanical and electrical measurements of individual single-layer flakes of Nb 4 C 3 T x MXene, which are prepared via an improved synthetic method are reported. Characterization of field-effect transistor devices based on individual single-layer Nb 4 C 3 T x flakes shows an electrical conductivity of 1024 ± 165 S cm -1 , which is two orders of magnitude higher than the previously reported values for bulk Nb 4 C 3 T x assemblies, and an electron mobility of 0.41 ± 0.27 cm 2 V -1 s -1 . Atomic force microscopy nanoindentation measurements of monolayer Nb 4 C 3 T x membranes yield an effective Young's modulus of 386 ± 13 GPa, assuming a membrane thickness of 1.26 nm. This is the highest value reported for nanoindentation measurements of solution-processable 2D materials, revealing the potential of Nb 4 C 3 T x as a primary component for various mechanical applications. In conclusion, the agreement between the mechanical properties of 2D Nb 4 C 3 T x MXene and cubic NbC suggests that the extensive experimental data on bulk carbides could be useful for identifying new MXenes with improved functional characteristics.
36 MATERIALS SCIENCE↗
Composition and Configuration Dependence of Glass-Transition Temperature in Binary Copolymers and Blends of Polyhydroxyalkanoate Biopolymers
Polyhydroxyalkanoates (PHAs), a promising class of biomaterials, have gained considerable attention to replace petroleum-based plastics owing to their excellent biocompatibility and biodegradability. Homopolymers of PHA suffer from poor tunability in thermal and mechanical properties. Going from homopolymers to copolymers, the design space can be substantially enhanced by combining two or more monomers in different compositions (i.e., relative ratios of the different monomers) and configurations (i.e., relative positions of the different monomers in the polymer backbone) leading to a substantially large chemical space where application-specific optimization for the targeted functionality can be performed. However, this composition and configuration dependence of properties in the vast PHA copolymer chemical space remains largely unexplored. In this contribution, further building on our past work with PHA homopolymers, we systematically explore these chemical trends for glass-transition temperature (Tg) in PHA copolymers and blends. Overall, our molecular dynamics simulations, utilizing a previously validated force field for PHAs, suggest that these trends are largely governed not only by the homopolymer Tg values but also configuration-dependent interchain interactions in the copolymer system. In particular, our results indicate that the configuration-dependent variation in the target property at a fixed composition can be significant in the presence of hydrogen-bond-forming monomers. These qualitative observations are further rationalized by quantitatively analyzing various closely related atomic level descriptors of copolymers and blends such as monomer mobility, number of hydrogen bonds, and pair correlation functions. The findings presented in this work help to develop a deeper atomistic-level understanding of thermomechanical behavior of PHA-based copolymers and can potentially guide the rational design of biopolymers as environmental-friendly functional materials.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Generalized kinetic model for defect evolution in irradiated materials
A fundamental and open problem in materials science is to determine how the structural properties of irradiated and self-irradiated materials evolve in time. Structural defects generated by irradiation lead to changes in a material’s macroscopic properties, and these macroscopic changes, such as volumetric swelling, can in turn give rise significant alterations of the functionality of a material. Here, we develop a unified analytical model to understand the complex interplay between aggregation, fragmentation, and recombination processes involving mobile clusters of defects such as bubbles, voids, and interstitial atoms in materials subject to radiative sources. Specifically, we employ a mean field approach to derive a system of coupled kinetic equations that describes both the time evolution of the density of each type of defect and how clusters of each defect form and grow as the material ages.
36 MATERIALS SCIENCE↗
Assessing factors that determine adatom migration and clustering on a thin film oxide; Pt 1 and Rh 1 on the “29” Cu x O/Cu(1 1 1) surface
The dynamical nature of single-site catalysts under non-equilibrium conditions poses significant challenges in the full characterization of their active sites. The “29” oxide is a thin Cu x O film grown on Cu(111) which provides a well-defined surface on which to study the structure and chemistry of atomically dispersed precious metals. A combination of experimental and first-principles approaches is used to investigate the factors that influence the mobility of metal adatoms and their clustering tendencies. Our work elucidates how a homogenous coordination environment of neutral single-atoms can be obtained when its tendency to break oxide bonds within its vicinity is low. Herein we demonstrate that this in turn affects the chemical atomically dispersed species on thin-film oxides, as defects on the oxide would in fact allow such species to be more accessible to CO. We thus highlight the importance of understanding the relationship between defects and atomically dispersed active sites upon designing single-site catalysts.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Chemical randomness, lattice distortion and the wide distributions in the atomic level properties in high entropy alloys
High entropy alloys (HEAs) consist of multiple elements present in large proportions that are randomly distributed on a crystal lattice. On the one hand, the presence of multiple elements engenders wide ranges of atomic radii, electronegativities, electron valences and magnetic moments, whereas on the other, the presence of chemical randomness creates unique nearest neighbor environments among the lattice sites. As a result, the symmetry of the energy landscape is broken essentially at each lattice site thereby resulting in highly distorted energy landscapes. At the atomistic level, the lattice distortion has been widely observed in the form of varying bond lengths. At the electronic level, a range of charge transfers result in the charge density distortion. Collectively, the distorted landscapes cause large quantitative variations of the atomic level properties; in this review, we highlight the effect of lattice distortion on point defect energetics, stacking fault energies, and dislocation mobility. Besides the well- known large HEAs phase space, the enormity of the distorted energy landscape that scales with the atomic configurations is a new consideration; understanding this coupling between composition, lattice distortion and properties’ variations thus becomes an exciting but challenging area within the field of HEAs. Furthermore, this coupling is expected to open a new door for materials design, where the materials properties could be tuned via leveraging the lattice distortion, which is essentially absent in dilute/ordered alloys.
36 MATERIALS SCIENCE↗
Atomic-layer engineering of nickelates (in search of novel superconductors)
Karl Alex Mueller's intuition was that the nature of mobile charge carriers in manganates and nickelates should be like those in cuprates, which he believed were Jahn-Teller polarons, so he expected them to also host high-temperature superconductivity (HTS). Following his suggestions and persuasion, in the past, we performed several experiments that included atomic-layer-by-layer synthesis of novel, metastable manganates and nickelates. Despite our efforts and several USO sightings, here we failed to find any reproducible superconductivity and dropped the project fifteen years ago. Our results are presented here, for the first time - timely, since HTS was very recently discovered in nickelates (under pressure). So, whether his opinions were on the mark or not, Alex did guess it right - again.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
FTP-Server for exchange, interpretation, and database-search of ion mobility spectra, literature, preprints and software
To assist current discussion in the field of ion mobility spectrometry, at the Institut fur Spectrochemie und angewandte Spektroskopie, Dortmund, start with 4th of December, 1994 work of an FTP-Server, available for all research groups at univerisities, institutes and research worker in industry. We support the exchange, interpretation, and database-search of ion mobility spectra through data format JCAMP-DS (Joint Committee on Atomic and Molecular Physical Data) as well as literature retrieval, pre-print, notice, and discussion board. We describe in general lines the entrance conditions, local addresses, and main code words. For further details, a monthly news report will be prepared for all common users. Internet email address for subscribing is included in document.
Baumbach, J. I.↗
Skutterudites: a New Class of Promising Thermoelectric Materials
Based on literature data and experimental findings at JPL, semiconductors with the skutterudite structure TPn(sub 3) (where T is a transition metal element such as Co, Rh, Ir, Ni and Pd, and Pn is a pnicogen element such as P, As and Sb) possess attractive characteristics and show a good potential for high ZT values. the high degree of covalency results in high mobility and low electrical resistivity values while a relatively complex 32-atom unit cell results in a reasonably low thermal conductivity.
skutterudites thermoelectric material↗
Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron
The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.
Qiu, Yueming↗
Atomic Diffusion, Segregation, and Grain Boundary Migration in Nickel-Based Alloys from Molecular Dynamics Simulations
Grain boundary diffusion and metal mobility in alloys control material performance in many applications and yet remain poorly understood at a mechanistic level. With advances in accessible time and length scales for computational molecular simulations, and recent force field developments, we now possess tools to help unravel those mechanisms. Using large-scale molecular dynamics simulations, here we examined vacancy-mediated diffusion processes in Ni-5Cr alloy with low and high-energy grain boundaries. We show that atomic diffusion inside the grain boundary plane is about four times higher than bulk diffusion, at any temperature, and exhibits a typical Arrhenius behavior with a very small energy barrier (0~.8 eV for Cr and 0.7 eV for Ni within 1300-1600 K). Additionally, the fastest diffusing species inverts; Cr diffusion was faster than Ni in the bulk but slower in the grain boundaries. This is attributed to the creation of high cohesive energy clusters of Cr at the grain boundary. Grain boundary migration was also observed to be temperature dependent and appears to be two times higher in the 5% Cr alloy than in pure Ni, highlighting the important role of the alloying element on grain boundary motion.
Simonnin, Pauline GN↗
Multiscale Concurrent Atomistic-Continuum (CAC) modeling of multicomponent alloys
We report strengthening in complex multicomponent systems such as solid solution alloys is controlled primarily by the dynamic interactions between dislocation lines and heterogeneously distributed solute species. Modeling of extended defect length scales in such multicomponent systems becomes prohibitively expensive, motivating the development of reduced order approaches. This work explores the application of the Concurrent Atomistic-Continuum (CAC) method to model dislocation mobility in random alloys at extended length scales. By employing recently developed average-atom interatomic potentials, the average “bulk” material response in coarse-grained regions interacts with true random solute species in the atomistic-scale domain. We demonstrate that spurious stresses in domain resolution transition regions are eliminated entirely due to the CAC formulation. Simultaneously, the key details of local stress fluctuation due to randomness in the dislocation core region are captured, and fluctuating stress smoothly decays to the long-range dislocation stress field response. Dislocation mobility calculations, for line lengths over 400 nm, are computed as a function of alloy composition in the model FeNiCr system and compared to full molecular dynamics (MD). The results capture the composition-dependent trends, while reducing degrees of freedom by nearly 40%. This approach can be readily extended to any system described by an EAM potential and facilitates the study of large-scale defect dynamics in complex solute environments to support computational alloy design.
36 MATERIALS SCIENCE↗
Simulations of self- and Xe diffusivity in uranium mononitride including chemistry and irradiation effects
A combination of density functional theory and empirical potential atomic scale simulations have been used to determine a model for defect stability and mobility in uranium mononitride (UN), as a function of temperature (T) and N 2 partial pressure (p N 2 ). Using the model, predictions of hypo-stoichiometry under U-rich conditions compare favorably to CALPHAD calculations using the TAF-ID database. Furthermore, our predictions of U and N self-diffusivity are in good agreement with experiments carried out as a function of T at specific partial pressures under thermal equilibrium. The validated atomic scale data have then been implemented within a cluster dynamics method to simulate irradiation-enhanced defect concentrations. All defects and clusters studied have significantly enhanced concentrations, with respect to thermal equilibrium, as T is lowered. The irradiation-enhanced Xe diffusivity is compared to post-irradiation annealing and in-pile experiments. In conclusion, the contributions of various defects and clusters to non-stoichiometry, self-diffusivity, and Xe diffusivity are discussed.
38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
Understanding effects of chemical complexity on helium bubble formation in Ni-based concentrated solid solution alloys based on elemental segregation measurements
Here, helium bubble formation and swelling were systematically studied in Ni-based concentrated solid solution alloys containing different numbers and types of elements. Our microscopy analysis showed that although increasing the alloy chemical complexity helps suppress bubble formation in general, there is no monotonic relationship between the bubble growth rate and the number of alloying elements. Certain elements (e.g., Fe and Pd) are more effective in suppressing bubble growth than others (e.g., Cr and Mn). Atom probe tomography was applied to accurately measure elemental segregation around bubbles, revealing unique effects of certain alloying elements on vacancy migration towards bubbles. More specifically, the high vacancy mobility via Cr sites leads to a large vacancy flux and an increased bubble size, while the high degree of atomic size mismatch introduced by Pd helps deflect vacancy flow away from bubbles and decrease the amount of swelling. The effects identified in this study provide new strategies to design concentrated solid solutions with superior resistance to swelling.
36 MATERIALS SCIENCE↗
Quantum octets in high mobility pentagonal two-dimensional PdSe 2
Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe 2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm 2 /Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
A Si-Substituted Spirobifluorene Hole-Transporting Material for Perovskite Solar Cells
Hybrid organic-inorganic perovskite solar cells (PSCs) have shown promise for next-generation photovoltaics. Here, this study presents a simple approach for enhancing the performance and stability of PSCs by substituting the center carbon atom of the common hole transport material (HTM) Spiro-MeOTAD with a silicon atom. This modification, termed Si-Spiro, results in an increased hole mobility. A density functional theory simulation indicates that the enhanced hole mobility is due to the structural change of Si-Spiro. Electron beam-induced current microscopy measurements indicate improved charged extraction at the Si-Spiro/perovskite interface. A power conversion efficiency of 22.5% is achieved in Si-Spiro-based PSCs, outperforming standard Spiro-MeOTAD. Additionally, Si-Spiro-based PSCs demonstrate enhanced stability, maintaining over 90% of performance over 120 h of one-sun operation. Depth-profiling X-ray photoelectron spectroscopy revealed that Si-Spiro effectively blocks metal ion migration, which contributes to its enhanced stability. The findings suggest that Si-Spiro could be promising a HTM for high-performing, stable PSCs.
14 SOLAR ENERGY↗
Tuning of the electronic and vibrational properties of epitaxial MoS 2 through He-ion beam modification
Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Native and radiation induced point defects in AlN and Sc-doped AlN
Herein, we have performed first-principles calculations to investigate the electronic structure, configurations, formation, and binding energies of native and radiation induced point defects in pristine and Sc-doped wurtzite AlN. For the native defects, the nitrogen vacancy has the lowest formation energy in p-type material while the aluminum vacancy has the lowest formation energy in n-type material which is consistent with the previous studies. Several interstitial defect structures were modeled for Al, N, and Sc atoms. The effects of charge state on their relative stability were investigated. The binding energy of Sc with point defects was calculated and found to be dependent strongly on the defect type and charge state. The results obtained are discussed in light of the possible Sc effects on the radiation damage evolution in AlN. Thus the attraction of Sc atom to N vacancy and both Al and N interstitials reduces their mobility and increases Frenkel pair recombination distance.
36 MATERIALS SCIENCE↗