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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

NASA Tech Briefs, May 2006

T-Shaped Emitter Metal Structures for HBTs Rigorous Estimation of SNR of a PSK Communication Link Advanced Ka-Band Transceiver With Monopulse Tracking EMI Filters for Low-Temperature Applications Lightweight Electronic Camera for Research on Clouds Pilot Weather Advisor System Waveguide Power-Amplifier Module for 80 to 150 GHz Better Back Contacts for Solar Cells on Flexible Substrates Topics covered include:Tunable, Highly Stable Lasers for Coherent Lidar; Improved Photon-Emission-Microscope System; Program Synthesizes UML Sequence Diagrams; Aspect-Oriented Subprogram Synthesizes UML Sequence Diagrams; Updated Computational Model of Cosmic Rays Near Earth; Software for Alignment of Segments of a Telescope Mirror; Simulation of Dropping of Cargo With Parachutes; DAVE-ML Utility Program; Robust Control for the Mercury Laser Altimeter; Thermally Stable Piezoelectric and Pyroelectric Polymers; Combustion Synthesis of Ca3(PO4)2 Net-Shape Surgical Implants; Stochastic Representation of Chaos Using Terminal Attractors; Two High-Temperature Foil Journal Bearings; Using Plates To Represent Fillets in Finite-Element Modeling; Repairing Chipped Silicide Coatings on Refractory Metal Substrates; Simplified Fabrication of Helical Copper Antennas; Graded-Index "Whispering-Gallery" Optical Microresonators; Optical Profilometers Using Adaptive Signal Processing; Manufacture of Sparse-Spectrum Optical Microresonators; Exact Tuning of High-Q Optical Microresonators by Use of UV; Automation for "Direct-to" Clearances in Air-Traffic Control; Improved Traps for Removing Gases From Coolant Liquids; and Lunar Constellation of Frozen Elliptical Inclined Orbits.

Source record↗
NASA NTRS1984

Equivalent electron fluence for space qualification of shallow junction heteroface GaAs solar cells

It is desirable to perform qualification tests prior to deployment of solar cells in space power applications. Such test procedures are complicated by the complex mixture of differing radiation components in space which are difficult to simulate in ground test facilities. Although it has been shown that an equivalent electron fluence ratio cannot be uniquely defined for monoenergetic proton exposure of GaAs shallow junction cells, an equivalent electron fluence test can be defined for common spectral components of protons found in space. Equivalent electron fluence levels for the geosynchronous environment are presented.

Wilson, J. W.↗
NASA NTRS1986

Nonlinear analysis of a relativistic beam-plasma cyclotron instability

A self-consistent set of nonlinear and relativistic wave-particle equations are derived for a magnetized beam-plasma system interacting with electromagnetic cyclotron waves. In particular, the high-frequency cyclotron mode interacting with a streaming and gyrating electron beam within a background plasma is considered in some detail. This interaction mode may possibly find application as a high-power source of coherent short-wavelength radiation for laboratory devices. The background plasma, although passive, plays a central role in this mechanism by modifying the dielectric properties in which the magnetized electron beam propagates. For a particular choice of the transverse beam velocity (i.e., the speed of light divided by the relativistic mass factor), the interaction frequency equals the nonrelativistic electron cyclotron frequency times the relativistic mass factor. For this choice of transverse beam velocity the detrimental effects of a longitudinal beam velocity spread is virtually removed. Power conversion efficiencies in excess of 18 percent are both analytically calculated and obtained through numerical simulations of the wave-particle equations. The quality of the electron beam, degree of energy and pitch angle spread, and its effect on the beam-plasma cyclotron instability is studied.

Sprangle, P.↗
NASA NTRS2000

High Voltage Design Concepts for Launch Vehicles and Orbital Spacecraft Applications

With the advent of design concepts such as, electromechanical actuation and "more electric" initiatives, has come the need for electrical power buses and electronic equipment to operate at higher than normal dc voltages to meet power requirements while keeping current levels to manageable levels. This new bus voltage has been typically 270 Volts dc nominal for launch vehicles, and 120 Volt dc for the International Space Station. This paper will discuss the new design applications for high voltage dc power in existing and future launch vehicles and spacecraft and the potential problems associated therewith. These new applications must be operational from lift-off, ascent, on orbit and descent in all of the pressure and temperature conditions for each, i.e. through the "Paschen region" twice. This paper will also attempt to stimulate an interest in the academic and professional communities to support and conduct research needed for design data applicable to high voltage dc usage.

Hall, David K.↗
NASA NTRS1994

Ilmenite as Dual-Use Material

This paper addresses the subject of dual-use space technology transfer of a novel, non-traditional material termed ilmenite, found in a large percentage in the moon rocks brought back by NASA's APOLLO missions. The paper is somewhat premature in the sense that though the material as a mineral has been known for a long time, very little is known about pure single crystal ilmenite and hence few applications have been demonstrated. Yet, in another sense, it is very timely due to the fact that ilmenite promises to be a very interesting competition to silicon, silicon carbide and other compound semiconductors, especially those that are employed in high power, high temperature and large data storage/retrieval applications. It seems to be an excellent example of a small investment-high return situation. While some of the applications of this material - for production of oxygen, for instance - have been well-known, electronic applications have received relatively little attention. One reason for this was the fact that growth of single crystal ilmenite requires precise process conditions and parameters. We believe for the first time these have been determined in the Center for Electronic Materials, Texas A&M University. The work being done at Texas A&M University and Prairie View A&M University (supported by Battelle Pacific Northwest Laboratories and the Center for Space Power) indicates the excellent potential this material has in space as well as in terrestrial applications. To mention a few: as a wide band gap semiconductor it has applications in high temperature, high power situations, especially when heat dissipation is a problem such as may occur in the Space Station; the possibility of this material radiating in the blue region, it has immense applications in optoelectronics; as a material with a high density of highly directional d-bands, it lends itself to novel processing conditions and perhaps even to 'tunability' of physical parameters; as a potential scintillating material, it has possible applications as a sensor in waste management; as an oxygen sensor it has possible applications in automotive electronics; and as a radiation resistant material, it has obvious applications in the space environment. Results - experimental and theoretical - obtained so far in our laboratories will be reported with particular emphasis on the transfer of technology involving this fascinating material.

Kumar, A. A.↗
NASA NTRS2001

Silicon Carbide Electronic Devices

The status of emerging silicon carbide (SiC) widebandgap semiconductor electronics technology is briefly surveyed. SiC-based electronic devices and circuits are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot function. Projected performance benefits of SiC electronics are briefly illustrated for several applications. However, most of these operational benefits of SiC have yet to be realized in actual systems, primarily owing to the fact that the growth techniques of SiC crystals are relatively immature and device fabrication technologies are not yet sufficiently developed to the degree required for widespread, reliable commercial use. Key crystal growth and device fabrication issues that limit the performance and capability of high-temperature and/or high-power SiC electronics are identified. The electrical and material quality differences between emerging SiC and mature silicon electronics technology are highlighted.

Neudeck, P. G.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1972

Electrothermal oscillations and the quasilinear theory of electron enthalpy fluctuations in magnetohydrodynamic generators and magnetoplasmadynamic arc thrusters

Flucturations in electron density and temperature coupled through OHM's Law are studied for MHD power generator and MPD arc thruster applications. The dispersion relation based on linear theory is derived, and the two limiting cases of infinite ionization rate and frozen flow are examined. The nonlinear effects of the frozen flow case are then studied in the quasilinear limit. Equations are derived for the amplitude of the fluctuation and its effect upon Ohm's Law and the electron temperature equation. Conditions under which a steady state can exist in the presence of the fluctuation are examined, and effective transport properties are determined.

Smith, J. M.↗
NASA NTRS1976

The irregularity spectrum in interstellar space

Published data on the interstellar scintillations of three pulsars are analyzed using a theory based on the Markov approximation for strong scintillations. The data are found to be consistent with either a Gaussian or Kolmogorov-like power-law irregularity spectrum for the interstellar material. For two of the pulsars, application of the Kolmogorov power law suggests the presence of regions of larger than normal electron density between us and the pulsar. The parameters of the deduced power-law spectrum are considered with independent measures of the large-scale structures of the gas and indicate the possibility of a broadly turbulent interstellar medium with a Kolmogorov-like spectrum.

Lee, L. C.↗
NASA NTRS1982

Phase control and beam steering of semiconductor laser arrays

The operational principles and a possible device configuration of one dimensional monolithically integrated semiconductor laser arrays are described. The output beam of the array can be electronically steered. Devices of the type can find applications in optical communication systems where the power levels needed are above the capability of a single laser device.

Katz, J.↗
NASA NTRS2004

LERCIP 2004 Summary

This summer I am continuing my project from the previous two summers. My work involves ohmic contacts to N-type silicon carbide (Sic) devices. My mentor, Dr. Robert Okojie, is developing the technology behind high performance sensors and actuators for harsh environments. Sic is useful because it is able to operate at temperatures up to 600 C and it is resistant to radiation damage. This allows sensors and electronics to be placed in new locations, such as inside a jet engine or in space application without using heavy shielding. Ultimately this results in more efficient, smarter engine technology, reduced launch weights for spacecraft, and high power and high temperature electronics. A fundamental part of Sic devices is the ohmic contact. The contact is the interface between the semiconductor (Sic) and external circuitry. The current flowing in and out the devices is through the contact. Ensuring that these contacts remain ohmic (linear I-V behavior) allows us to fabricate devices that do not waste power at the metallurgical junction. Another key part is maintaining a low contact resistance. It is desired to maintain minimum energy loss by avoiding a rectifying electrical characteristic. My project is to develop and implement a testing procedure for measuring the contact resistance while the device is operating at high temperature. It is important to measure the contacts while simulating the true operating environment as closely as possible. For this reason, measurements are taken while the device is heated at intervals up to 600 C in air. To test the long tern reliability of the devices, the high temperature measurements are repeated after heating the sample for long intervals in air. A new set of data is gathered after heating for a total of 100, 200 and then 400 hours. The current as a function of voltage and the contact resistance was measured using the four point probe technique. The four point probe method is chosen because it measures contact resistance while eliminating error due to wire resistance and calibration issues.

DeAngelis, David↗
NASA NTRSDate not supplied

A Brief Overview of Silicon Carbide Based Smart Sensor System Technologies for Planetary and Aeronautics Applications

A range of aerospace application related to planetary exploration and aeronautic engine operations require Smart Sensor System technologies operational in harsh environments. A Smart Sensor System as described here implies the use of sensors combined with electronics and other supporting technologies. For example, missions to the surface of planets like Venus or Mercury are challenged by extreme temperatures and environments, e.g., extended Venus operation 465°C [1]. In response, NASA has been developing capabilities for a small lander that is designed to operate for months in the extreme temperatures. These capabilities span electronics, sensors, communications, and power. Such a lander would enable new revolutionary science. Similar game changing capabilities are enabled by the introduction of high temperature smart systems into aeronautic engine applications to enable distributed intelligence within the engine system [2]. Core to meeting these applications is operational harsh environment electronics, corresponding sensor systems, and their integration. This presentation concentrates on the status of Smart System technologies emphasizing the role of Silicon Carbide (SiC) electronics and sensors. For example, SiC integrated circuit (IC) electronics have matured to a state where a simple long-life scientific probe is feasible for extended Venus surface operations [1, 3]. Maturation of these high temperature electronics and other technologies has been part of NASA projects to provide an operational system for in situ exploration of the Venus surface for up to 60 days [1,3-4]. This is in parallel to work expanding the capabilities of the sensor technology to provide science measurements on the Venus surface. This technology development, as well as that for other planetary applications and intelligent high temperature engine operations, will be discussed.

engine monitoring↗
NASA NTRSDate not supplied

Qualification of a Pulsed, Millinewton Class Metal Plasma Thruster for Broad Mission Applications

In the field of low power (<100W) electric propulsion, all thruster options demand significant trade-offs between operating parameters, reliability and scalable cost. With many systems on the market there are concerns with reliability, the need for extra considerations such as electron neutralizers for pure ion plumes, and the cost or craft compatibility of propellants. The Metal Plasma Thruster (MPT) is a new type of electric propulsion technology intended for low power applications. The system imparts momentum using inert, solid metal pucks as a propellant by using pulsed power to convert the metal into high velocity (~17km/s for Mo) jets of quasi-neutral plasma. The MPT technology does not require gas or liquid propellants, neutralizers, standby heaters, high voltage electronics, high electric or magnetic fields to operate. This comparatively simple pulsed operation is amenable to closed loop control, which provides for fine thrust control and S/C directed impulse on demand. Furthermore, the technology can use any metal as propellant, opening up unique opportunities for In-Situ Resource Utilization (ISRU) as well as customizability of performance for meeting specific mission needs. This paper describes implementation and direct measurement of this closed loop control mode as well as impulse measurement of multiple metals consistent with the aim of ISRU at NASA Glenn Research Center (GRC).

Electric Propulsion↗
NASA NTRSDate not supplied

Qualification of a Pulsed, Millinewton Class Metal Plasma Thruster for Broad Mission Applications

In the field of low power (<100W) electric propulsion, all thruster options demand significant trade-offs between operating parameters, reliability and scalable cost. With many systems on the market there are concerns with reliability, the need for extra considerations such as electron neutralizers for pure ion plumes, and the cost or craft compatibility of propellants. The Metal Plasma Thruster (MPT) is a new type of electric propulsion technology intended for low power applications. The system imparts momentum using inert, solid metal pucks as a propellant by using pulsed power to convert the metal into high velocity (~17km/s for Mo) jets of quasi-neutral plasma. The MPT technology does not require gas or liquid propellants, neutralizers, standby heaters, high voltage electronics, high electric or magnetic fields to operate. This comparatively simple pulsed operation is amenable to closed loop control, which provides for fine thrust control and S/C directed impulse on demand. Furthermore, the technology can use any metal as propellant, opening up unique opportunities for In-Situ Resource Utilization (ISRU) as well as customizability of performance for meeting specific mission needs. This paper describes implementation and direct measurement of this closed loop control mode as well as impulse measurement of multiple metals consistent with the aim of ISRU at NASA Glenn Research Center (GRC).

Electric Propulsion↗
NASA NTRS1999

Two Phase Technology Development Initiatives

Three promising thermal technology development initiatives, vapor compression thermal control system, electronics cooling, and electrohydrodynamics applications are outlined herein. These technologies will provide thermal engineers with additional tools to meet the thermal challenges presented by increased power densities and reduced architectural options that will be available in future spacecraft. Goddard Space Flight Center and the University of Maryland are fabricating and testing a 'proto- flight' vapor compression based thermal control system for the Ultra Long Duration Balloon (ULDB) Program. The vapor compression system will be capable of transporting approximately 400 W of heat while providing a temperature lift of 60C. The system is constructed of 'commercial off-the-shelf' hardware that is modified to meet the unique environmental requirements of the ULDB. A demonstration flight is planned for 1999 or early 2000. Goddard Space Flight Center has embarked upon a multi-discipline effort to address a number of design issues regarding spacecraft electronics. The program addressed the high priority design issues concerning the total mass of standard spacecraft electronics enclosures and the impact of design changes on thermal performance. This presentation reviews the pertinent results of the Lightweight Electronics Enclosure Program. Electronics cooling is a growing challenge to thermal engineers due to increasing power densities and spacecraft architecture. The space-flight qualification program and preliminary results of thermal performance tests of copper-water heat pipes are presented. Electrohydrodynamics (EHD) is an emerging technology that uses the secondary forces that result from the application of an electric field to a flowing fluid to enhance heat transfer and manage fluid flow. A brief review of current EHD capabilities regarding heat transfer enhancement of commercial heat exchangers and capillary pumped loops is presented. Goddard Space Flight Center research efforts applying this technique to fluid management and fluid pumping are discussed.

Didion, Jeffrey R.↗