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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Atomically dispersed Ag on δ-MnO 2 via cation vacancy trapping for toluene catalytic oxidation

The regulation of metal–support interaction (MSI) and the improvement of noble metal utilization are the frontiers of volatile organic compound (VOC) catalytic oxidation. Here, we report a H 2 O 2 -assisted synthesis process for trapping Ag + onto the engineered Mn vacancies of δ-MnO 2 for the catalytic oxidation of toluene. Due to the strong MSI between Ag and δ-MnO 2 , the monoatomic Ag + anchored on cation vacancies forms longer and weakened Ag–O bonds compared with Ag 2 O, which can extra promote the formation of oxygen vacancies and the activation of adjacent lattice oxygen in Ag–O–Mn units compared with regular nanoparticle counterparts. It is beneficial to the steps of methyl dehydrogenation, demethylation, and benzene ring cleavage. The catalyst yields excellent toluene oxidation activity, enhanced turnover frequency in terms of Ag, and good stability. Finally, we propose in this study a facile design strategy for fabricating stably atomically dispersed metal sites, as well as clarify the structure–activity relationships during toluene catalytic oxidation, especially the important effect of single-atom Ag on the adjacent local structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Oxygen vacancy-induced ferroelectric effect in (111) strontium titanate single crystals controls photoelectrochemical water oxidation

Ferroelectric materials, such as tetragonal BaTiO 3 , have a permanent electric polarization that can be controlled with an external electric field, however, a ferroelectric polarization in cubic SrTiO 3 is forbidden by the higher symmetry of the lattice. Here we demonstrate that hydrogen annealed SrTiO 3−x single crystals can be polarized electrically, and that the polarization controls the activity for photoelectrochemical water oxidation, a pathway to solar hydrogen fuel. Specifically, it is observed that the anodic water oxidation photocurrent increases from 0.99 to 2.22 mA cm −2 at 1.23 V RHE (60 mW cm −2 , UV illumination) or decreases to 0.50 mA cm −2 after electric polarization of hydrogen-annealed (111) SrTiO 3−x single crystals in forward or reverse direction. The polarization also modifies the surface photovoltage signal of the material and its flat band potential, based on Mott–Schottky measurements. These observations are attributed to the formation of an electric dipole at the (111) SrTiO 3−x surface, which alters the potential drop across the depletion layer at the solid–liquid junction, and with it the electron transfer barrier. Density functional theory calculations confirm that an electric dipole can result from the movement of oxygen vacancies between the surface or sub-surface layers of SrTiO 3−x . The filling of these surface oxygen vacancies is the probable cause for the observed disappearance of the electric polarization after 24 h storage in air and 48 h in argon. Overall, this work establishes a new surface-based ferroelectric effect in SrTiO 3−x and its use for solar energy conversion during photoelectrochemical water oxidation. Because oxygen vacancy defects are common, similar electric polarization effects are to be expected in other metal oxides.

Assavachin, Samutr [University of California, Davi↗
DOE OSTI2020

Magnetic states of atomic vacancies in graphite probed by scanning tunneling microscopy

Intrinsic defects in graphitic materials, like vacancies and edges, have been expected to possess magnetic states from the many-body interaction of localized electrons. However, charge screening from graphite bulk carriers significantly reduces the localization effect and hinders the observation of those magnetic states. Here, we use an ultra-low-temperature scanning tunneling microscope with a high magnetic field to observe the magnetic states of atomic vacancies in graphite generated by ion sputtering. Scanning tunneling spectroscopy reveals localized states at the vacancies, which exhibit splitting at a certain magnetic field whose separation increases with the field strength. The transition is well described by the “Anderson model,” which describes the emergence of localized magnetic states inside the metallic reservoir through electron–electron interaction. The interaction strength is estimated to be between 1 meV and 3 meV, which is supported by the density functional theory calculation. The observation provides an important foundation for application of intrinsic defects to carbon-based spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Direct formation of nitrogen-vacancy centers in nitrogen doped diamond along the trajectories of swift heavy ions

We report depth-resolved photoluminescence measurements of nitrogen-vacancy (NV$^-$) centers formed along the tracks of swift heavy ions in type Ib synthetic single crystal diamonds that had been doped with 100 ppm nitrogen during crystal growth. Analysis of the spectra shows that NV$^-$ centers are formed preferentially within regions where electronic stopping processes dominate and not at the end of the ion range where elastic collisions lead to formation of vacancies and defects. Thermal annealing further increases NV yields after irradiation with SHI preferentially in regions with high vacancy densities. NV centers formed along the tracks of single swift heavy ions can be isolated with lift-out techniques for explorations of color center qubits in quasi 1D registers with average qubit spacing of a few nm and of order 100 color centers per micron along 10 to 30 micron long percolation chains.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Oxygen vacancy dynamics in monoclinic metallic VO 2 domain structures

It was demonstrated recently that the nano-optical and nanoelectronic properties of VO 2 can be spatially programmed through the local injection of oxygen vacancies by atomic force microscope writing. In this work, we study the dynamic evolution of the patterned domain structures as a function of the oxygen vacancy concentration and the time. A threshold doping level is identified that is critical for both the metal–insulator transition and the defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is also characterized, which is directly responsible for the short lifetimes of sub-100 nm domain structures. This information is imperative for the development of oxide nanoelectronics through defect manipulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Can a deep-learning model make fast predictions of vacancy formation in diverse materials?

The presence of point defects, such as vacancies, plays an important role in materials design. Here, we explore the extrapolative power of a graph neural network (GNN) to predict vacancy formation energies. We show that a model trained only on perfect materials can also be used to predict vacancy formation energies (E vac ) of defect structures without the need for additional training data. Such GNN-based predictions are considerably faster than density functional theory (DFT) calculations and show potential as a quick pre-screening tool for defect systems. To test this strategy, we developed a DFT dataset of 530 E vac consisting of 3D elemental solids, alloys, oxides, semiconductors, and 2D monolayer materials. We analyzed and discussed the applicability of such direct and fast predictions. We applied the model to predict 192 494 E vac for 55 723 materials in the JARVIS-DFT database. Our work demonstrates how a GNN-model performs on unseen data.

2D materials↗
DOE OSTI2023

Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films

Despite its scalability and CMOS process compatibility, the limited endurance and sub-optimal stress response of ferroelectric Zr-substituted hafnia [(Hf,Zr)O 2 ] have been one of the key impediments toward its integration into practical device and technology applications. Here, using electrical measurements complemented by photoluminescence spectroscopy, we investigate the underlying mechanisms behind this behavior in 10 nm thick W/Hf 0.5 Zr 0.5 O 2 /W capacitors. Analyzing the evolution of leakage current with stress cycles and the spectroscopic response of the stress-induced leakage current, we attribute the behavior to defect levels, which lie at 0.6 eV from the conduction band edge of the ferroelectric. Photoluminescence spectroscopy, in turn, further corroborates the defect level's position within the bandgap while enabling its attribution to the presence of oxygen vacancies. Furthermore, this work helps to identify oxygen vacancies as the key factor responsible for the degraded endurance and stress response in (Hf,Zr)O 2 and subsequently motivates the exploration of methods to reduce the oxygen vacancy concentrations without destabilizing the ferroelectric orthorhombic phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Epitaxial oxide ionotronics: Interfaces and oxygen vacancies

Oxide ionotronics is an interdisciplinary field in which systems and devices rely on the migration of ions/ionic defects to alter or drive functionality. In this perspective, we focus on epitaxial oxide heterostructures and the contributing roles of oxygen vacancies and interfaces in ionotronics. We begin with a description of oxygen vacancy behavior, with a focus on vacancy ordering and the effects of interfaces and electric fields on particular epitaxial oxide systems. We then emphasize the use of synchrotron x-ray techniques for investigating system structure and dynamics in situ at interfaces and surfaces. Finally, an outlook on the future of epitaxial oxide ionotronics is provided, and several key areas for research are identified, such as freestanding heterostructures, combinatorial synthesis and machine learning, and next-generation synchrotron x-ray characterization.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The role of defect charge, crystal chemistry, and crystal structure on positron lifetimes of vacancies in oxides

Density functional theory based positron lifetime (PL) calculations for cation and oxygen monovacancies in a range of oxides—hematite, magnetite, hercynite, and alumina—have been conducted to compare the impact of defect chemistry and crystal structure on the predicted lifetimes. The role of defect charge state has also been examined. A comparison across the same type of crystalline structure but different composition shows that oxygen vacancies only induce a slight increase in the positron-electron overlap and thus barely modify the PL as compared to the bulk. A much more substantial increase of PL is observed for cation monovacancies, regardless of crystal structure or the elemental nature of the vacancy, which we ascribe to an enhanced localization of charge density around the vacant site. The structural and compositional richness of the oxide leads to longer defect PLs, with defected hercynite exhibiting the longest PLs. The charge state of cation monovacancies modifies only by a small percentage the positron localization, relegating to secondary importance the metal defect's oxidation state in modifying the lifetime of positrons within vacancy traps.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Valence 1⁢𝑠−0⁢𝑑 proton vacancy of the 32 Si ground state

The 32 Si( 3 He,d) 33 P reaction was studied in inverse kinematics at 6.3 MeV/u. States in 33 P corresponding to the proton 1s-0d single-particle orbitals were identified up to ≈ 4.5 MeV in excitation energy. The ( 3 He,d) spectroscopic factors were determined from distorted-wave Born approximation calculations. When combined with complementary neutron-adding data, the 1s-0d proton vacancies in the 32 Si ground state were extracted. In conjunction with a reanalysis of data from previous single-particle measurements, the trends in proton and neutron vacancy were explored across the 28,30,32,34 Si isotopes. Both proton and neutron vacancy data show gradual changes in their occupancies. The proton 1s 1/2 orbitals in 32 Si and 34 Si are both consistent with being empty. In conclusion, the ground-state nucleon distributions are described by shell-model calculations constrained to the 1s-0d model space.

Watwood, N. [Argonne National Laboratory (ANL), Ar↗
DOE OSTI2025

Ab initio study of strain-driven vacancy clustering in aluminum

Here, we present a first-principles investigation of strain-driven vacancy clustering in aluminum. Specifically, we perform Kohn-Sham density functional theory calculations to study the influence of hydrostatic strains on clustering in tri-, quad-, and heptavacancies. We find that compressive strains are a key driving force for vacancy aggregation, particularly for collapse of clusters on the (111) plane, consistent with prior experimental observations of vacancy clusters on this plane. Notably, we find that the heptavacancy on the (111) plane collapses to form a prismatic dislocation loop for hydrostatic compressive strains exceeding 5%, highlighting the critical role of such strains in prismatic dislocation loop nucleation in aluminum.

Physics - Condensed matter physics↗
DOE OSTI2024

Oxygen vacancies in niobium pentoxide as a source of two-level system losses in superconducting niobium

We identify a major source of quantum decoherence in three-dimensional superconducting radio-frequency (SRF) resonators and two-dimensional transmon qubits composed of oxidized niobium: oxygen vacancies in the niobium pentoxide, which drive two-level system (TLS) losses. By probing the effect of sequential in situ vacuum-baking treatments on the rf performance of bulk Nb SRF resonators and on the oxide structure of a representative Nb sample using TOF SIMS, we find a nonmonotonic evolution of cavity quality factor Q 0 , which correlates with the interplay of Nb 2 O 5 vacancy generation and oxide-thickness reduction. We localize this effect to the oxide itself and present the insignificant role of diffused interstitial oxygen in the underlying Nb by regrowing the oxide via wet oxidation, which reveals a mitigation of aggravated TLS losses. We hypothesize that such vacancies in the pentoxide serve as magnetic impurities and are a source of TLS-driven rf loss.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Static and dynamical magnetic properties of the extended Kitaev-Heisenberg model with spin vacancies

Motivated by the potential to suppress antiferromagnetic long-range order in favor of the long-sought-after Kitaev quantum spin liquid state, we study the effect of spin vacancies in the extended Kitaev-Heisenberg model. In particular, we focus on a realistic model obtained from fitting inelastic neutron scattering on α–RuCl 3 . We observe that the long-range zigzag magnetic ordered state only survives when the doping concentration is smaller than 5%. Upon further increasing the spin vacancy concentration, the ground state becomes a short-range ordered state at low temperatures. Compared with experiments, our classical solution overstabilizes the zigzag correlation in the presence of spin vacancies. Here, our theoretical results provide guidance toward interpreting inelastic neutron scattering experiments on magnetically diluted Kitaev candidate materials

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Vacancy Spectroscopy of Non-Abelian Kitaev Spin Liquids

Spin vacancies in the non-Abelian Kitaev spin liquid are known to harbor Majorana zero modes, potentially enabling topological quantum computing at elevated temperatures. Here, we study the spectroscopic signatures of such Majorana zero modes in a scanning tunneling setup where a non-Abelian Kitaev spin liquid with a finite density of spin vacancies forms a tunneling barrier between a tip and a substrate. In this study, our key result is a well-defined peak close to zero bias voltage in the derivative of the tunneling conductance whose voltage and intensity both increase with the density of vacancies. This “quasi-zero-voltage peak” is identified as the closest analog of the zero-voltage peak observed in topological superconductors that additionally reflects the fractionalized nature of spin-liquid-based Majorana zero modes. We further highlight a single-fermion Van Hove singularity at a higher voltage that reveals the energy scale of the emergent Majorana fermions in the Kitaev spin liquid. Our proposed signatures are within reach of current experiments on the candidate material α-RuCl 3 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films

Here, we examine the effects of Pt vacancies on the magnetotransport properties of Weyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy on c-plane sapphire. Rutherford backscattering spectrometry and x-ray diffraction measurements suggest that phase-pure GdPt x ⁢Sb films can accommodate up to 15% of Pt vacancies (x = 0.85), which act as acceptors, as measured by the Hall effect. Two classes of electrical transport behavior are observed. Pt-deficient films display metallic temperature-dependent resistivity (dρ/dT > 0). The longitudinal magnetoresistance (LMR, magnetic field B parallel to electric field E) is more negative than transverse magnetoresistance (TMR, B⁢⊥⁢E), consistent with the expected chiral anomaly for a Weyl semimetal. The combination of Pt-vacancy disorder and doping away from the expected Weyl nodes, however, suggests that conductivity fluctuations may explain the negative LMR rather than chiral anomaly. Samples closer to stoichiometry display the opposite behavior: semiconductorlike resistivity (dρ/dT > 0) and more negative TMR than LMR. Hysteresis and other nonlinearities in the low-field Hall effect and magnetoresistance suggest that spin-disorder scattering and possible topological Hall effect may dominate the near-stoichiometric samples. Our findings highlight the complications of transport-based identification of Weyl nodes but point to possible topological spin textures in GdPtSb.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Charge trapping at Al/Al 2 ⁢O 3 interface facilitates hydrogen-induced superabundant metal vacancy formation

Hydrogen is a ubiquitous impurity that deteriorates the metal/oxide interface, causing challenges such as current leakage and blistering. Here, in this work, we uncover the mechanisms behind hydrogen-induced damage at the prototypical Al/A⁢l 2 ⁢O 3 interface. The precursor that we identify is charge trapping at the interface, which facilitates hydrogen segregation to the interface plane as H – . Presence of hydrogen increases aluminum vacancy concentration at the interfacial metal and oxide planes. Each Al vacancy can trap multiple hydrogen atoms. As a result, the interfacial aluminum vacancy and hydrogen concentrations increase by orders of magnitude. Additionally, hydrogen behaves as an n-type dopant and increases electronic conductivity at the oxide layer adjacent to the interface by forming H + , and the [V Al –H] complex is the predominant defect at this layer. These findings provide the precursor mechanisms of hydrogen-induced damage at the metal-oxide interfaces and have implications for advancing Al/A⁢l 2 ⁢O 3 –based coatings and electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Controlling magnetism and transport at perovskite cobaltite interfaces via strain-tuned oxygen vacancy ordering

Complex oxides such as perovskite cobaltites exhibit rich phenomena at interfaces due to the complex interplay between their structural, defect, electronic, and magnetic degrees of freedom. Here, we study this interplay here in the ferromagnetic metallic cobaltite La 1−𝑥 ⁢Sr 𝑥⁢ CoO 3−𝛿 , using specific substrates to vary both the heteroepitaxial strain (compressive vs tensile) and growth orientation ((001) vs (110)). Transmission electron microscopy, electron energy-loss spectroscopy, high-resolution X-ray diffraction, magnetometry, polarized neutron reflectometry, and electronic magnetotransport measurements are applied. Lattice mismatch and growth orientation are found to enable the precise control of interfacial oxygen vacancy ordering in La 1−𝑥⁢ Sr 𝑥 ⁢CoO 3−𝛿 , thus dictating strain relaxation and oxygen vacancy depth profiles, in turn controlling thickness-dependent magnetic and electronic properties. In particular, compressive strain and (110) orientations minimize deleterious magnetic/electronic dead layer effects, leading to the optimization of interfacial magnetism and transport. Strain and orientation tuning of oxygen vacancy ordering are thus established as powerful means to control physical properties at cobaltite-based interfaces, relevant to several fields.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Oxygen vacancies in niobium pentoxide as a source of two-level system losses in superconducting niobium

Two-level systems (TLS) have long been a catch-all explanation for RF loss and quantum decoherence in superconducting devices. In our study, the first to directly link TLS losses to a specific physical mechanism, we demonstrate that oxygen vacancies in the naturally formed Nb₂O₅ on oxidized niobium are a major driver of such dissipation. We performed sequential in situ vacuum-baking treatments on niobium superconducting radio-frequency (SRF) cavities and used time-of-flight secondary ion mass spectrometry (TOF-SIMS) to reveal a nonmonotonic evolution in cavity quality factor (Q₀). This behavior correlates with the interplay of Nb₂O₅ vacancy generation and oxide-thickness dissolution. We localize this effect to the oxide itself and present the insignificant role of diffused interstitial oxygen in the underlying Nb by regrowing the oxide via wet oxidation, revealing a mitigation of aggravated TLS losses. We hypothesize that such vacancies in the pentoxide serve as magnetic impurities and are a source of TLS-driven rf loss. Although our measurements center on 3-D SRF cavities, the insights gained here have significant implications for mitigating decoherence in 2-D superconducting qubits.

Bafia, Daniel P. [Fermilab]↗