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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Heteroatom-Doped Flash Graphene

Heteroatom doping can effectively tailor the local structures and electronic states of intrinsic two-dimensional materials, and endow them with modified optical, electrical, and mechanical properties. Recent studies have shown the feasibility of preparing doped graphene from graphene oxide and its derivatives via some post-treatments, including solid-state and solvothermal methods, but they require reactive and harsh reagents. However, direct synthesis of various heteroatom-doped graphene in larger quantities and high purity through bottom-up methods remains challenging. Here, we report catalyst-free and solvent-free direct synthesis of graphene doped with various heteroatoms in bulk via flash Joule heating (FJH). Seven types of heteroatom-doped flash graphene (FG) are synthesized through millisecond flashing, including single-element-doped FG (boron, nitrogen, oxygen, phosphorus, sulfur), two-element-co-doped FG (boron and nitrogen), as well as three-element-co-doped FG (boron, nitrogen, and sulfur). Here, a variety of low-cost dopants, such as elements, oxides, and organic compounds are used. The graphene quality of heteroatom-doped FG is high, and similar to intrinsic FG, the material exhibits turbostraticity, increased interlayer spacing, and superior dispersibility. Electrochemical oxygen reduction reaction of different heteroatom-doped FG is tested, and sulfur-doped FG shows the best performance. Lithium metal battery tests demonstrate that nitrogen-doped FG exhibits a smaller nucleation overpotential compared to Cu or undoped FG. The electrical energy cost for the synthesis of heteroatom-doped FG synthesis is only 1.2 to 10.7 kJ g –1 , which could render the FJH method suitable for low-cost mass production of heteroatom-doped graphene.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2022

Relation between interfacial shear and friction force in 2D materials

Understanding the interfacial properties between an atomic layer and its substrate is of key interest at both the fundamental and technological levels. From Fermi level pinning to strain engineering and superlubricity, the interaction between a single atomic layer and its substrate governs electronic, mechanical and chemical properties. Here, we measure the hardly accessible interfacial transverse shear modulus of an atomic layer on a substrate. By performing measurements on bulk graphite, and on epitaxial graphene films on SiC with different stacking orders and twisting, as well as in the presence of intercalated hydrogen, we find that the interfacial transverse shear modulus is critically controlled by the stacking order and the atomic layer–substrate interaction. Importantly, we demonstrate that this modulus is a pivotal measurable property to control and predict sliding friction in supported two-dimensional materials. The experiments demonstrate a reciprocal relationship between friction force per unit contact area and interfacial shear modulus. As a result, the same relationship emerges from simulations with simple friction models, where the atomic layer– substrate interaction controls the shear stiffness and therefore the resulting friction dissipation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

LAN: A Materials Notation for Two-Dimensional Layered Assemblies

Two-dimensional (2D) layered materials offer intriguing possibilities for novel physics and applications. Before any attempt at exploring the materials space in a systematic fashion, or combining insights from theory, computation, and experiment, a formal description of information about an assembly of arbitrary composition is required. Here, we introduce a domain-generic notation that is used to describe the space of 2D layered materials from monolayers to twisted assemblies of arbitrary composition, existent or not yet fabricated. The notation corresponds to a theoretical materials concept of stepwise assembly of layered structures using a sequence of rotation, vertical stacking, and other operations on individual 2D layers. Its scope is demonstrated with several example structures using common single-layer materials as building blocks. This work overall aims to contribute to the systematic codification, capture, and transfer of materials knowledge in the area of 2D layered materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Rugged bialkali photocathodes encapsulated with graphene and thin metal film

Protection of free-electron sources has been technically challenging due to lack of materials that transmit electrons while preventing corrosive gas molecules. Two-dimensional materials uniquely possess both of required properties. Here, we report three orders of magnitude increase in active pressure and factor of two enhancement in the lifetime of high quantum efficiency (QE) bialkali photocathodes (cesium potassium antimonide (CsK 2 Sb)) by encapsulating them in graphene and thin nickel (Ni) film. The photoelectrons were extracted through the graphene protection layer in a reflection mode, and we achieved QE of ~ 0.17% at ~ 3.4 eV, 1/e lifetime of 188 h with average current of 8.6 nA under continuous illumination, and no decrease of QE at the pressure of as high as ~ 1 × 10 –3 Pa. In comparison, the QE decreased drastically at 10 –6 Pa for bare, non-protected CsK 2 Sb photocathodes and their 1/e lifetime under continuous illumination was ~ 48 h. We attributed the improvements to the gas impermeability and photoelectron transparency of graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Design principles and physical properties of two-dimensional heterostructured borides

Principles of design to create dynamically stable transition metal-, lanthanide-, and actinide-based low-dimensional borides are presented. A charge transfer analysis of donor metal atoms to electron deficient honeycombed B lattices allows to predict complex covalent heterostructures hosting Dirac states. The applicable guidelines are supported with the analysis of phonon spectra computed with first-principles calculations to demonstrate the physical stability of nanometer-thick heterostructures. Similar or dissimilar layered borides can be stacked on top of each other in a layer-by-layer fashion creating compounds that can be fundamentally different from the individual layers, opening a rich playground to explore novel physical properties and new materials. Functionalities such as multiple Dirac states, highly dispersive electronic bands, and decoupled acoustic-optical phonon branches are studied. The combination of appealing electronic properties and physical realization makes of predicted layered borides promising materials to integrate a new generation of two-dimensional materials.

2-dimensional systems↗
DOE OSTI2025

Electrochemical Random-Access Memory: Progress, Perspectives, and Opportunities

Non-von Neumann computing using neuromorphic systems based on analogue synaptic and neuronal elements has emerged as a potential solution to tackle the growing need for more efficient data processing, but progress toward practical systems has been stymied due to a lack of materials and devices with the appropriate attributes. Recently, solid state electrochemical ion-insertion, also known as electrochemical random access memory (ECRAM) has emerged as a promising approach to realize the needed device characteristics. ECRAM is a three terminal device that operates by tuning electronic conductance in functional materials through solid-state electrochemical redox reactions. This mechanism can be considered as a gate-controlled bulk modulation of dopants and/or phases in the channel. Early work demonstrating that ECRAM can achieve nearly ideal analogue synaptic characteristics has sparked tremendous interest in this approach. More recently, the realization that electrochemical ion insertion can be used to tune the electronic properties of many types of materials including transition metal oxides, layered two-dimensional materials, organic and coordination polymers, and that the changes in conductance can span orders of magnitude has further attracted interest in ECRAM as the basis for analogue synaptic elements for inference accelerators as well as for dynamical devices that can emulate a wide range of neuronal characteristics for implementation in analogue spiking neural networks. At its core, ECRAM shares many fundamental aspects with rechargeable batteries, where ion insertion materials are used extensively for their ability to reversibly store charge and energy. Computing applications, however, present drastically different requirements: systems will require many millions of devices, scaled down to tens of nanometers, all while achieving reliable electronic-state tuning at scaled-up rates and endurances, and with minimal energy dissipation and noise. Further, in this review, we discuss the history, basic concepts, recent progress, as well as the challenges and opportunities for different types of ECRAM, broadly grouped by their primary mobile ionic charge carrier, including Li, protons, and oxygen vacancies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Nonclassical Strong Metal–Support Interactions for Enhanced Catalysis

Strong metal–support interaction (SMSI), which encompasses reversible encapsulation and de-encapsulation and modulation of surface adsorption properties, imposes great impacts on the performance of heterogeneous catalysts. Recent development of SMSI has surpassed the prototypical encapsulated Pt-TiO 2 catalyst, affording a series of conceptually novel and practically advantageous catalytic systems. Here, in this work, we provide our perspective on recent progress in nonclassical SMSIs for enhanced catalysis. Unravelling the structural complexity of SMSI necessitates the combination of multiple characterization techniques at different scales. Synthesis strategies leveraging chemical, photonic, and mechanochemical driving forces further expand the definition and application scope of SMSI. Exquisite structure engineering permits elucidation of the interface, entropy, and size effect on the geometric and electronic characteristics. Materials innovation places the atomically thin two-dimensional materials at the forefront of interfacial active site control. A broader space is awaiting exploration, where exploitation of metal–support interactions brings compelling catalytic activity, selectivity, and stability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Effects of thin metal contacts on few-layer van der Waals ferrielectric CuInP 2 S 6

Out-of-plane polarized ferroelectric materials in a capacitive structure provide a key component for several technological applications. Furthermore, two-dimensional materials are expected to aid in the quest for both ultrathin and flexible electronics. Of the various two-dimensional ferroelectrics with out-of-plane polarization, CuInP 2 S 6 is special in that the Cu atoms are highly mobile and it has been shown to possess both low- and high-polarization states. Here, using density-functional-theory calculations, we explore the stabilization of the ferroelectric state for several prototypical metal contacts (Gr, Ni, Cu, Au, and Ag). In all cases, we find that the ferroelectric state can be stabilized at fewer layers than in the freestanding case. For all of the considered conventional metal contacts, we also find the existence of a quasi-ferroelectric state that stabilizes a polar phase for thicknesses greater than two layers of CIPS. In the cases of Au and Ag, interfacial alignment and strain can be used to stabilize ferroelectricity at the bilayer limit. Furthermore, we find that the strength of the interaction between the contact and CuInP 2 S 6 also leads to stabilization of the high-polarization state when ferroelectricity is stabilized. Lastly, energy-barrier calculations show that the system is still switchable in the presence of contact doping from the metal contacts.

2D materials↗
DOE OSTI2021

Electronic Structure Modification of Rectangular Phosphorene Quantum Dots Via Edge Passivation

Phosphorene is an elemental two-dimensional material that shows great promise as a metal-free photocatalyst owing to its high carrier mobility and direct band gap. Doping and edge functionalization of phosphorene can be exploited to tune its band gap and alter other properties. Herein, the electronic properties of a series of edge-passivated monolayer phosphorene quantum dots are investigated using an array of functional groups (OH, SH, NH 2 , SCH 3 , OCN, CN, and Cl) that are known to have electron-donating or electron-withdrawing capabilities. By employing density functional theory calculations, we demonstrate that edge functionalization can perturbatively shift the HOMO (highest occupied molecular orbital) and LUMO (lowest unoccupied molecular orbital) energy levels while simultaneously preserving the geometric structure and other favorable properties of pristine phosphorene. We use the average overall electrostatic potential of these systems to successfully predict the relative positioning of the HOMO and LUMO energy levels while presenting qualitative explanations on potential jumps introduced by the dipole layers formed due to edge functionalization. Furthermore, our results suggest that selective functionalization permits considerable control over the band edge positions, which could be utilized for applications in energy and optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Tuning Electronic Properties of 2D Materials Using Metal Adsorbates: Cu at WTe 2 Edges

Two-dimensional materials exhibit properties promising for novel applications. Topologically protected states at their edges can be harnessed for use in quantum devices. We use ab initio simulations to examine properties of edges in 1T'-WTe 2 monolayers, known to exhibit topological order, and their interactions with Cu atoms. Comparison of (010)-oriented edges that have the same composition but different terminations shows that, as the number of Cu atoms increases, their thermodynamically-preferred arrangement depends on the details of the edge structure. Cu atoms aggregate into a cluster at the most stable edge; while the cluster is non-magnetic, it spin-polarizes the W atoms along the edge, which removes the topological protection. At the metastable edge, Cu atoms form a chain incorporated into the WTe 2 lattice; the topological state is preserved in spite of the dramatic edge restructuring. This suggests that exploiting interactions of metal species with metastable edge terminations can provide a path towards non-invasive interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

2D materials-assisted heterogeneous integration of semiconductor membranes toward functional devices

Heterogeneous integration techniques allow the coupling of highly lattice-mismatched solid-state membranes, including semiconductors, oxides, and two-dimensional materials, to synergistically fuse the functionalities. The formation of heterostructures generally requires two processes: the combination of crystalline growth and a non-destructive lift-off/transfer process enables the formation of high-quality heterostructures. Although direct atomic interaction between the substrate and the target membrane ensures high-quality growth, the strong atomic bonds at the substrate/epitaxial film interface hinder the non-destructive separation of the target membrane from the substrate. Alternatively, a 2D material-coated compound semiconductor substrate can transfer the weakened (but still effective) surface potential field of the surface through the 2D material, allowing both high-quality epitaxial growth and non-destructive lift-off of the grown film. This Perspective reviews 2D/3D heterogeneous integration techniques, along with applications of III–V compound semiconductors and oxides. Here, the advanced heterogeneous integration methods offer an effective method to produce various freestanding membranes for stackable heterostructures with unique functionalities that can be applied to novel electrical, optoelectronic, neuromorphic, and bioelectronic systems.

2D materials↗
DOE OSTI2024

A high-throughput and data-driven computational framework for novel quantum materials

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDs), possess an intrinsic van der Waals gap at the layer interface, allowing for remarkable tunability of the optoelectronic features via external intercalation of foreign guests such as atoms, ions, or molecules. Herein, we introduce a high-throughput, data-driven computational framework for the design of novel quantum materials derived from intercalating planar conjugated organic molecules into bilayer transition metal dichalcogenides and dioxides. By combining first-principles methods, material informatics, and machine learning, we characterize the energetic and mechanical stability of this new class of materials and identify the fifty (50) most stable hybrid materials from a vast configurational space comprising ∼105 materials, employing intercalation energy as the screening criterion.

Kastuar, Srihari M. (ORCID:0000000279001561)↗
DOE OSTI2023

IMS Rapid Response 2023-2 (RR 2023-RND-2): Magnetic order in layered bismuthide RhMnBi 3 (Final Report)

Microelectronics are technologies (mostly theoretical at this point) to create electronic circuits with components of atomic length scale. One of the key materials innovations enabling this technology is exfoliatable two-dimensional materials. These materials allow thin sheets of only a few atoms thick to be easily created in the laboratory. More and more of these materials are reported every year, but few have been characterized in detail. Thus a major goal in materials research in pursuit of microelectronic devices is characterizing newly discovered materials to evaluate their properties. The goal of this project was the measure and understand the magnetic order in a newly discovered van der Waals magnet RhMnBi 3 . Bulk property experiments indicated very complicated magnetic behavior, with multiple phase transitions between 2K and 300K (room temperature). This potentially indicated highly sensitive and tunable magnetism appropriate for single-layer magnetic switches and sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Nernst and Ettingshausen effects in gapped quantum materials

Here, we investigate whether there could exist topological invariants of gapped two-dimensional materials related to dissipationless thermoelectric transport at low temperatures. We give both macroscopic and microscopic arguments showing that thermoelectric transport coefficients vanish in the limit of zero temperature, and thus topological invariants arise only from the electric Hall conductance and the thermal Hall conductance. Our arguments apply to systems with arbitrarily strong interactions. We also show that there is no analog of the Thouless pump for entropy.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quantum-Confined Lifshitz Transition on Weyl Semimetal T d -MoTe 2

Adsorption of alkali atoms onto material surfaces is widely utilized for controlling electronic properties and is particularly effective for two-dimensional materials. While tuning the chemical potential and band gap and creating quantum-confined states are well established for alkali adsorption on semiconductors, the effects on semimetallic systems remain largely elusive. Here, utilizing angle-resolved photoemission spectroscopy measurements and density functional theory calculations, we disclose the creation of two-dimensional electron gas and the quantum-confined Lifshitz transition at the surface of a Weyl semimetal T d -MoTe 2 by potassium adsorption. Electrons from potassium adatoms are shown to be transferred mainly to the lowest unoccupied band within the gapped part of the Brillouin zone, which, in turn, induces strong surface band bending and quantum confinement in the topmost layer. The quantum-confined topmost layer evolves from a semimetal to a strong metal with a Lifshitz transition departing substantially from the bulk band. The present finding and its underlying mechanism can be exploited for the creation of electronic heterojunctions in van der Waals semimetals.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Topological current divider in a Chern insulator junction

A Chern insulator is a two-dimensional material that hosts chiral edge states produced by the combination of topology with time reversal symmetry breaking. Such edge states are perfect one-dimensional conductors, which may exist not only on sample edges, but on any boundary between two materials with distinct topological invariants (or Chern numbers). Engineering of such interfaces is highly desirable due to emerging opportunities of using topological edge states for energy-efficient information transmission. Here, we report a chiral edge-current divider based on Chern insulator junctions formed within the layered topological magnet MnBi 2 Te 4 . We find that in a device containing a boundary between regions of different thickness, topological domains with different Chern numbers can coexist. At the domain boundary, a Chern insulator junction forms, where we identify a chiral edge mode along the junction interface. We use this to construct topological circuits in which the chiral edge current can be split, rerouted, or switched off by controlling the Chern numbers of the individual domains. Our results demonstrate MnBi 2 Te 4 as an emerging platform for topological circuits design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1974

Vibration and stress analysis of soft-bonded shuttle insulation tiles. Modal analysis with compact widely space stringers

An efficient iterative procedure is described for the vibration and modal stress analysis of reusable surface insulation (RSI) of multi-tiled space shuttle panels. The method, which is quite general, is rapidly convergent and highly useful for this application. A user-oriented computer program based upon this procedure and titled RESIST (REusable Surface Insulation Stresses) has been prepared for the analysis of compact, widely spaced, stringer-stiffened panels. RESIST, which uses finite element methods, obtains three dimensional tile stresses in the isolator, arrestor (if any) and RSI materials. Two dimensional stresses are obtained in the tile coating and the stringer-stiffened primary structure plate. A special feature of the program is that all the usual detailed finite element grid data is generated internally from a minimum of input data. The program can accommodate tile idealizations with up to 850 nodes (2550 degrees-of-freedom) and primary structure idealizations with a maximum of 10,000 degrees-of-freedom. The primary structure vibration capability is achieved through the development of a new rapid eigenvalue program named ALARM (Automatic LArge Reduction of Matrices to tridiagonal form).

Ojalvo, I. U.↗