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At least 145 records · Page 8

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NASA NTRS1978

Time-delay-and-integration charge-coupled devices using tin oxide gate technology

Doped tin oxide gates are used in a time-delay-and-integration (TDI) CCD scheme in an effort to develop a stable transparent gate technology. Design characteristics of the system are discussed, including 2 sections of 10 by 9 integration stages, four-phase buried channel construction, and 10 input parallel-in/serial-out output shift register at a video rate of 1.25 MHz. A quantum efficiency of 65% with smooth spectral response is attained by front surface imaging. The suitability of the system for the Landsat program is discussed in terms of TDI-CCD operating parameters.

Thompson, L. L.↗

NASA NTRS1981

Molybdenum-tin as a solar cell metallization system

The operations of solar cell manufacture are briefly examined. The formation of reliable, ohmic, low-loss, and low-cost metal contacts on solar cells is a critical process step in cell manufacturing. In a commonly used process, low-cost metallization is achieved by screen printing a metal powder-glass frit ink on the surface of the Si surface and the conductive metal powder. A technique utilizing a molybdenum-tin alloy for the metal contacts appears to lower the cost of materials and to reduce process complexity. The ink used in this system is formulated from MoO3 with Sn powder and a trace amount of titanium resonate. Resistive losses of the resulting contacts are low because the ink contains no frit. The MoO3 is finally melted and reduced in forming gas (N2+H2) to Mo metal. The resulting Mo is highly reactive which facilitates the Mo-Si bonding.

Boyd, D. W.↗

NASA NTRS1982

Electron loss study of the native oxide of tin

Using electron loss spectroscopy in combination with ion beam depth profiling, it has been established that the oxide of tin formed by electropolishing followed by room temperature aging is metal free and composed of a mixture of SnO2 and SnO. In a fresh oxide layer, the SnO2 is confined to the outer portion of the predominantly SnO oxide. In an aged oxide layer, SnO2 is present up to the oxide/metal interface with an ever decreasing concentration as the interface is approached.

Bevolo, A. J.↗

NASA NTRS1983

On the low-lying states of TiN

A series of CAS SCF and multi-reference CI calculations are used to describe the lowest states of TiN. The bonding in all states is described as a triple bond involving the Ti 3d orbitals. The system has some ionic character as seen from both population analysis and dipole moment. The origins of the excited states are discussed.

Bauschlicher, C. W., Jr.↗

NASA NTRS1984

Electrochemical etching of the semiconductor lead tin telluride

Convective currents during the Bridgman growth of a compound semiconductor lead to temperature fluctuations at the solid-liquid interface. These temperature fluctuations in turn lead to microscopic compositional variations in the solid. Electrochemical principles have been applied to develop three etches which delineate the variations in the compound semiconductor, lead tin telluride, and allow optical studies of the growth kinetics of this material. Use of these etches has shown periodic lines during the initial growth, with indications of oscillatory instabilities developing in later stages of growth, and, finally, complete breakdown of the interface.

Barber, P. G.↗

NASA NTRS1985

Design of an experiment for the production of a foamed tin sample

The purpose of this paper is to present to fellow GAS users a portion of Purdue University's efforts. One of the major experiments in our GAS container is concerned with the experimental production of a foamed metal. A foamed metal is one that contains a significant amount of gas bubbles suspended in its solid volume. Purdue's GAS team proposes to do this with the help of a solid zinc carbonate that gives off carbon dioxide at high temperatures. Because of low energy requirements, the metal used for this experiment is tin. It is hoped that the use of near zero environment will keep the suspended bubbles more uniform than in an earth based process, hence not depleting the physical strength of the material as greatly as is observed on earth.

Eric Wernimont↗

NASA NTRS1986

A procedure to visualize the melt-solid interface in Bridgman grown germanium and lead tin telluride

An X-ray and gamma-ray analysis technique has been developed which makes it possible to observe the melt solid interface during semiconductor crystal growth in a Bridgman furnace. Experiments have been carried out to observe the interface movement and shape in germanium as well as in lead tin telluride by means of the new method, and the results are discussed in detail. X-ray and gamma-ray radiographs of the melt-solid interfaces in the two semiconductor crystal specimens, are provided.

Barber, P. G.↗

NASA NTRS1987

An electrically conductive thermal control surface for spacecraft encountering Low-Earth Orbit (LEO) atomic oxygen indium tin oxide-coated thermal blankets

An organic black thermal blanket material was coated with indium tin oxide (ITO) to prevent blanket degradation in the low Earth orbit (LEO) atomic oxygen environment. The blankets were designed for the Galileo spacecraft. Galileo was initially intended for space shuttle launch and would, therefore, have been exposed to atomic oxygen in LEO for between 10 and 25 hours. Two processes for depositing ITO are described. Thermooptical, electrical, and chemical properties of the ITO film are presented as a function of the deposition process. Results of exposure of the ITO film to atomic oxygen (from a shuttle flight) and radiation exposure (simulated Jovian environment) are also presented. It is shown that the ITO-protected thermal blankets would resist the anticipated LEO oxygen and Jovian radiation yet provide adequate thermooptical and electrical resistance. Reference is made to the ESA Ulysses spacecraft, which also used ITO protection on thermal control surfaces.

Bauer, J. L.↗

NASA NTRS1988

Tool For Tinning Integrated-Circuit Leads

As many as eight flatpacks held. Tool made of fiberglass boards. Clamps row of flatpacks by their leads so leads on opposite side of packages dipped. After dipping, nuts on boards loosened, flatpacks turned around, nuts retightened, and untinned leads dipped. Strips of magnetic material grip leads of flatpacks (made of Kovar, magnetic iron/nickel/cobalt alloy) while boards repositioned. Micrometerlike screw used to adjust exposed width of magnetic strip to suit dimensions of flatpacks. Holds flatpack integrated circuits so leads tinned. Accommodates several flatpacks for simultaneous dipping of leads in molten solder. Adjusts to accept flatpacks in range of sizes.

Prosser, Gregory N.↗

NASA NTRS1988

Direct-current magnetron fabrication of indium tin oxide/InP solar cells

Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.

Coutts, T. J.↗

NASA NTRS1988

Gravitational macrosegregation in unidirectionally solidified lead-tin alloy

Nine small samples of binary lead-tin alloys were solidifed unidirectionally upward, with both cooling rate and thermal gradient being closely controlled. Results presented include thermal measurements, chemical composition measurements, and microstructural characterization. In the six Pb-15 wt pct Sn ingots, normal macrosegregation was observed, with Sn content being highest at the top of the ingot. No significant macrosegretation was noted in the three ingots of nominal composition Sn-15 wt pct Sn.

Wang, L.↗

NASA NTRS1989

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy

An attempt is made to improve device efficiencies by depositing indium tin oxide onto epitaxially grown p-InP on p(+)-InP substrates. This leads to a reduction in the device series resistance, high-quality reproducible surfaces, and an improvement in the transport properties of the base layer. Moreover, many of the facets associated with badly characterized bulk liquid encapsulated Czochralski substrates used in previous investigations are removed in this way.

Li, X.↗

NASA NTRS1989

High-efficiency indium tin oxide/indium phosphide solar cells

Improvements in the performance of indium tin oxide (ITO)/indium phosphide solar cells have been realized by the dc magnetron sputter deposition of n-ITO onto an epitaxial p/p(+) structure grown on commercial p(+) bulk substrates. The highest efficiency cells were achieved when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, global efficiencies of 18.9 percent were achieved. It is suggested that the excellent performance of these solar cells results from the optimization of the doping, thickness, transport, and surface properties of the p-type base, as well as from better control over the ITO deposition procedure.

Li, X.↗

NASA NTRS1989

A characterization study of a hydroxylated polycrystalline tin oxide surface

In this study Auger electron spectroscopy, electron spectroscopy for chemical analysis (ESCA) and electron-stimulated desorption (ESD) have been used to examine a polycrystalline tin oxide surface before and after annealing in vacuum at 500 C. Features due to surface hydroxyl groups are present in both the ESCA and ESD spectra, and ESD shows that several chemical states of hydrogen are present. Annealing at 500 C causes a large reduction in the surface hydrogen concentration but not complete removal.

Hoflund, Gar B.↗

NASA NTRS1989

Evidence of alloy formation during reduction of platinized tin oxide surfaces

Ion scattering spectroscopy, Auger electron spectroscopy, and electron spectroscopy for chemical analysis have been used to examine a platinized tin oxide catalyst surface before, during, and after reduction by annealing under vacuum at 250 to 450 C. These techniques were then used to examine the reduced surface after a room-temperature, low-pressure oxygen exposure. The spectral results and the behavior of the reduced surface toward oxygen exposure both indicate that a Pt/Sn alloy is produced during reduction.

Gardner, Steven D.↗

NASA NTRS1990

Platinized tin oxide catalysts for CO2 lasers: Effects of pretreatment

Platinized tin oxide surfaces used for low-temperature CO oxidation in CO2 lasers have been characterized before and after reduction in CO at 125 and 250 C using ion scattering spectroscopy (ISS) and X ray photoelectron spectroscopy (XPS). XPS indicates that the Pt is present initially as PtO2. Reduction at 125 C converts the PtO2 to Pt(OH)2 while reduction at 250 C converts the PtO2 to metallic Pt. ISS shows that the Pt in the outermost atomic layer of the catalyst is mostly covered by substrate species during the 250 C reduction. Both the ISS and XPS results are consistent with Pt/Sn alloy formation. The surface dehydration and migration of substrate species over surface Pt and Sn appear to explain why a CO pretreatment at 250 C produces inferior CO oxidation activities compared to a 125 C pretreatment.

Gardner, Steven D.↗

NASA NTRS1990

Characterization study of polycrystalline tin oxide surfaces before and after reduction in CO

Polycrystalline tin oxide surfaces have been examined before and after reduction in 40 Torr of CO at 100 and 175 C using Auger electron spectroscopy (AES), electron spectroscopy for chemical analysis (ESCA), ion scattering spectroscopy (ISS) and electron stimulated desorption (ESD). The changes in the surface composition and chemical states of the surface species generally are subtle for the reductive conditions used. However, significant changes do occur with regard to the amounts and the chemical forms of the hydrogen-containing species remaining after both the 100 and 175 C reductions.

Drawdy, Jean E.↗

NASA NTRS1990

Composite superconducting wires obtained by high-rate tinning in molten Bi-Pb-Sr-Ca-Cu-O system

The preparation of high-T(sub c) superconducting long composite wires by short-time tinning of the metal wires in a molten Bi-Pb-Sr-Ca-Cu-O compound is discussed. The application of this method to the high-T(sub c) materials is tested, possibly for the first time. The initial materials used for this experiment were ceramic samples with nominal composition Bi(1.5)Pb(0.5)Sr2Ca2Cu3O(x) and T(sub c) = 80 K prepared by the ordinary solid-state reaction, and industrial copper wires from 100 to 400 microns in diameter and from 0.5 to 1 m long. The continuously moving wires were let through a small molten zone (approximately 100 cubic mm). The Bi-based high-T(sub c) ceramics in a molten state is a viscous liquid and it has a strongly pronounced ability to spread on metal wire surfaces. The maximum draw rate of the Cu-wire, at which a dense covering is still possible, corresponds to the time of direct contact of wire surfaces and liquid ceramics for less than 0.1 s. A high-rate draw of the wire permits a decrease in the reaction of the oxide melt and Cu-wire. This method of manufacture led to the fabrication of wire with a copper core in a dense covering with uniform thickness of about h approximately equal to 5 to 50 microns. Composite wires with h approximately equal to 10 microns (h/d approximately equal to 0.1) sustained bending on a 15 mm radius frame without cracking during flexing.

Grozav, A. D.↗