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At least 145 records · Page 8

Theoretical Study of Response of InGaAs Metal-Semiconductor-Metal Photodetectors

We present a theoretical investigation of the response of metal-semiconductor-metal (MSM) photodetectors made of InGaAs lattice-matched to InP using a two-dimensional drift-diffusion model with a thermionic-field emission boundary condition for the heterojunctions. The effect of including a top InAlAs layer to increase the effective barrier height of the metal fingers on the InGaAs active layer is thoroughly examined and found to limit the collection of the photocurrent signal due to the electron and hole barriers that it forms with InGaAs. Due to the thickness and height of the InAlAs barrier layer in existing designs, the tunneling current obtained from the model is found to be negligibly small to significantly affect the output signal current. In an attempt to obtain a better response, different design structures including one where a quasi-Schottky contact is utilized are studied and their speed of response, breakdown voltage, and dark current are compared to that of the usual InGaAs device.

Salem, Ali F.↗

Theoretical Study of the Effect of an AlGaAs Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance

The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift- diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time and the fall time of the output signal current are calculated for a simple GaAs, epitaxially grown, MSM device as well as for various double-heterostructure barrier devices. The double heterostructure devices consist of an AlGaAs layer sandwiched between the top GaAs active, absorption layer and the bottom GaAs substrate. The effect of the depth of the AlGaAs layer on the speed and responsivity of the MSM devices is examined. It is found that there is an optimal depth, at fixed applied bias, of the AlGaAs layer within the structure that provides maximum responsivity at minimal compromise in speed.

Salem, Ali F.↗

Effects of emitting surfaces and trapped ions on the sheath physics and current flow in multidimensional plasma systems

Recent one-dimensional simulations of planar sheaths with strong electron emission have shown that trapping of charge-exchange ions causes transitions from space-charge limited (SCL) to inverse sheaths. However, multidimensional emitting sheath phenomena with collisions remained unexplored, due in part to high computational cost. As such, we developed a novel continuum kinetic code to study the sheath physics, current flow and potential distributions in two-dimensional unmagnetized configurations with emitting surfaces. For small negatively biased thermionic cathodes in a plasma, the cathode sheath can exist in an equilibrium SCL state. The SCL sheath carries an immense density of trapped ions, neutralized by thermoelectrons, within the potential well of the virtual cathode. For further increases of emitted flux, the trapped ion cloud expands in space. The trapped ion space charge causes an increase of thermionic current far beyond the saturation limit predicted by conventional collisionless SCL sheath models without ion trapping. For sufficiently strong emission, the trapped ion cloud consumes the entire 2D plasma domain, forming a mode with globally confined ions and an inverse sheath at the cathode. In situations where the emitted flux is fixed and the bias is swept (e.g. emissive probe), the trapped ions cause a large thermionic current to escape for all biases below the plasma potential. Strong suppression of the thermionic emission, required for the probe to float, only occurs when the probe is above the plasma potential.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Cathode effects on thrust subsystem performance predictability.

Development of a model of mercury vapor electron bombardment thrustor hollow cathode operation. The proposed model predicts that the primary electron emission mechanism is thermionic when sufficient low work function material is present, that the cathode is heated by power extracted from the plasma to a temperature sufficient to emit the current demanded by the external circuit; that for a given total arc current, attempts to reduce cathode temperature by changes in the external thermal coupling will affect only the amount of power extracted from the plasma; and that depletion of low work function material in the cathode results in higher cathode temperature.

Goldstein, R.↗

500(deg)C electronics for harsh environments

Solid state vacuum devices (SSVDs) are a relatively new class of electronic devices. Innosys is a leading producer of high frequency SSVDs for a number of applications, including RF communications. SSVDs combine features inherent to both solid state and vacuum transistors. Electron transport can be by solid state or vacuum or both. The focus of this talk is on thermionic SSVDs, in which the primary vacuum transport is by thermionically liberated electron emission.

high temperature electronics↗

Theory of the thermionic current beyond the traditional space charge limit enabled by trapped ions in the virtual cathode

We show that trapped ions in virtual cathode potential wells can raise the transmitted current of emitted electrons into a plasma much closer to the full emission than is predicted by cathode sheath theories without trapped ions. The transmitted current is controlled by the well barrier voltage, which must adjust to balance the creation of low-energy ions within the well, and their loss. Our model considers the case of a plasma-facing cathode where trapped ions are created passively via charge-exchange collisions and lost passively via thermal leakage over the well. We quantify these rates and estimate the current in terms of system parameters for thermionic emission into a plasma with several cathode geometries. A general prediction is that the current as a function of emitted flux does not saturate at the traditional space charge limit (the onset of a well) but can reach far higher values until the trapped ion balance breaks down, causing instability. The maximum stable current depends on parameters but in principle can be arbitrarily high if active techniques are used to manipulate the trapped ion balance. We conclude that major improvements in plasma technologies with hot cathodes might be achieved by optimizing the current enhancement enabled by trapped ions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗