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NASA NTRS1978

Thin silicon solar cell performance characteristics

Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.

Gay, C. F.↗

NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗

NASA NTRS1980

Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells

The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.

Li, S. S.↗

NASA NTRS1981

Large area, low cost space solar cells with optional wraparound contacts

Design parameters for two large area, low cost solar cells are presented, and electron irradiation testing, thermal alpha testing, and cell processing are discussed. The devices are a 2 ohm-cm base resistivity silicon cell with an evaporated aluminum reflector produced in a dielectric wraparound cell, and a 10 ohm-cm silicon cell with the BSF/BSR combination and a conventional contact system. Both cells are 5.9 x 5.9 cm and require 200 micron thick silicon material due to mission weight constraints. Normalized values for open circuit voltage, short circuit current, and maximum power calculations derived from electron radiation testing are given. In addition, thermal alpha testing values of absorptivity and emittance are included. A pilot cell processing run produced cells averaging 14.4% efficiencies at AMO 28 C. Manufacturing for such cells will be on a mechanized process line, and the area of coverslide application technology must be considered in order to achieve cost effective production.

Michaels, D.↗

NASA NTRS1985

Two years of on-orbit gallium arsenide performance from the LIPS solar cell panel experiment

The LIPS on-orbit performance of the gallium arsenide panel experiment was analyzed from flight operation telemetry data. Algorithms were developed to calculate the daily maximum power and associated solar array parameters by two independent methods. The first technique utilizes a least mean square polynomial fit to the power curve obtained with intensity and temperature corrected currents and voltages; whereas, the second incorporates an empirical expression for fill factor based on an open circuit voltage and the calculated series resistance. Maximum power, fill factor, open circuit voltage, short circuit current and series resistance of the solar cell array are examined as a function of flight time. Trends are analyzed with respect to possible mechanisms which may affect successive periods of output power during 2 years of flight operation. Degradation factors responsible for the on-orbit performance characteristics of gallium arsenide are discussed in relation to the calculated solar cell parameters. Performance trends and the potential degradation mechanisms are correlated with existing laboratory and flight data on both gallium arsenide and silicon solar cells for similar environments.

Francis, R. W.↗

NASA NTRS1986

The role of oxygen in porous molybdenum electrodes for the alkali metal thermoelectric converter

A model for chemical reactions in porous molybdenum electrodes is presented which is based on thermochemical and kinetic data, known sodium-molybdenum-oxygen chemistry, X-ray diffraction analysis of molybdenum and molybdenum oxide electrodes, and the electrochemical behavior of the cell. Enhanced sodium transport through the electrode in its optimum performance state is found to be due to the high sodium ion conductivity of molten Na2MoO4 in the pores, and the electrical conduction to the molybdenum matrix by Na2Mo3O6. The decline of electrode performance is shown to be due to a combination of loss mechanisms for the Na-Mo-O compounds including reduction at short circuit, disproportionation of Na2Mo3O6 at open circuit, and the evaporation of Na2MoO4 at elevated temperature. It is suggested that operation of the cell at moderate voltage of about 0.5 V corresponding to maximum power may be a more stable condition for the porous electrode than open-circuit stand or short-circuit, where degradation reactions are heightened.

Williams, R. M.↗

NASA NTRS1990

Vertical bloch line memory

Vertical Bloch Line (VBL) memory is a recently conceived, integrated, solid-state, block-access, VLSI memory which offers the potential of 1Gbit/sq cm real storage density, gigabit per second data rates, and sub-millisecond average access times simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBL's are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of VBL pairs are used to store binary information. At present, efforts are being directed at developing a single-chip memory using 25Mbit/sq cm technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. This paper describes the current design architecture, functional elements, and supercomputer simulation results which are used to assist the design process. The current design architecture uses three metal layers, two ion implantation steps for modulating the thickness of the magnetic layer, one ion implantation step for assisting propagation in the major line track, one NiFe soft magnetic layer, one CoPt hard magnetic layer, and one reflective Cr layer for facilitating magneto-optic observation of magnetic structure. Data are stored in a series of elongated magnetic domains, called stripes, which serve as storage sites for arrays of VBL pairs. The ends of these stripes are placed near conductors which serve as VBL read/write gates. A major line track is present to provide a source and propagation path for magnetic bubbles. Writing and reading, respectively, are achieved by converting magnetic bubbles to VBL's and vice versa. The output function is effected by stretching a magnetic bubble and detecting it magnetoresistively. Experimental results from the past design cycle created four design goals for the current design cycle. First, the bias field ranges for the stripes and the major line needed to be matched. Second, the magnetic field barrier between the stripe and the read/write gates needed to be reduced. Third, current conductor routing needed to be improved to reduce occurrences of open-circuiting, short-circuiting, and eddy-current shielding. Fourth, a modified Co-alloy was needed with an increased coercivity and controlled magnetization to allow VBL stabilization to occur without affecting stripe stability.

Katti, R.↗

NASA NTRS1994

A PC based time domain reflectometer for space station cable fault isolation

Significant problems are faced by astronauts on orbit in the Space Station when trying to locate electrical faults in multi-segment avionics and communication cables. These problems necessitate the development of an automated portable device that will detect and locate cable faults using the pulse-echo technique known as Time Domain Reflectometry. A breadboard time domain reflectometer (TDR) circuit board was designed and developed at the NASA-JSC. The TDR board works in conjunction with a GRiD lap-top computer to automate the fault detection and isolation process. A software program was written to automatically display the nature and location of any possible faults. The breadboard system can isolate open circuit and short circuit faults within two feet in a typical space station cable configuration. Follow-on efforts planned for 1994 will produce a compact, portable prototype Space Station TDR capable of automated switching in multi-conductor cables for high fidelity evaluation. This device has many possible commercial applications, including commercial and military aircraft avionics, cable TV, telephone, communication, information and computer network systems. This paper describes the principle of time domain reflectometry and the methodology for on-orbit avionics utility distribution system repair, utilizing the newly developed device called the Space Station Time Domain Reflectometer (SSTDR).

Pham, Michael↗

NASA NTRS2020

Shield to Pin Coupling of Lightning-Like Transients on Payload Umbilical Cables on a Launch Pad

In this paper we describe in-situ testing of a long payload umbilical, on a launch site, injected with “lightning- like” transients and describe resulting pin-to-pin voltages. Injections and voltage measurements near the ground support equipment room, as well as at a location near the payload junction box, are made. The umbilical cables tested include an outer over-braid and the inner conductor coupling is examined for open circuit, short-circuit and various loads representative of spacecraft input impedances. This testing is important because the Kennedy Space Center (KSC) where the lightning occurrence is the highest in the United States, is the primary launch site for Launch Services Program spacecraft customers. Lightning planning is essential but developing a lightning plan is often overlooked or not adequately analyzed leaving the spacecraft vulnerable to time delays or even damage when lightning occurs. At other popular launch sites like Vandenberg Air Force Base (VAFB) where lightning occurs less often, although at the same or greater intensity when it does occur, lightning planning is often completely ignored by the spacecraft. The two major questions to be addressed in the lightning plan are what retesting should be done to establish a “goodness” level and what is the trigger criteria for this testing? The spacecraft will typically use a standard spacecraft check-out procedure to address the necessary retesting, but determining the trigger criteria is often an issue. For instance, a spacecraft needs to understand what their immunity is to a certain lightning magnitude and location. Determining the amount of current that can be coupled onto a spacecraft umbilical can be calculated by using worst case assumptions or measured with current probes and current measurement devices. Spacecraft can also determine what pin-to-pin voltages they are sensitive to, however pin-to-pin voltage measurements are not typically taken during the strike due to the invasive nature of this measurement. In this paper, we present detailed data on the shield to pin voltage transfer functions to provide insight to the spacecraft developers for lightning retest criteria planning. The results from this unique testing opportunity provide essential details on specific coupling mechanisms affecting spacecraft hardware that interfaces with the ground support equipment. This missing link between cable shield currents and payload susceptibility voltages has been methodically tested and representative data presented.

Trout, Dawn↗

NASA NTRS2018

Cumulative Distribution of Ballistic Impact Failures of Common Twisted-Pair Data Cables at Orbital Speeds

Data wire cable runs are a significant presence on the exterior of the International Space Station (ISS), and continued ISS mission support requires detailed assessment of cables due to micrometeoroid and orbit debris (MMOD) impact. These data wire cables are twisted-pair cables consisting of two 22AWG stranded conductors and fillers inside a tight fitting braided copper shield. The copper shield and its contents are covered with a jacket that has a nominal outer diameter of 3.76 mm and beta-cloth tape. The ISS engineering community has identified two loss-of-function mechanisms for these cables: open circuits due to severed conductors within the cable, and short circuits due to contact between conductors or grounded components. As these data cables are low power systems, short circuits are not expected to burn away the contact, so both open and short circuits are considered permanent loss-of-function for the cable. A total of ninety-seven impact experiments have been performed into these cables to develop a statistical model for the failure of these cables to be used in reliability studies. The experimental work has yielded cumulative distribution functions for these cables for steel and aluminum components of the orbital debris environment at representative speeds and impact obliquities.

Miller, Joshua E.↗

DOE OSTI2026

Gas-driven short disconnection mitigates thermal runaway in Li-ion batteries under mechanical abuse

Mechanical abuse poses a critical safety risk to Li-ion batteries by inducing internal short circuits that initiate thermal runaway. Remarkably, voltage recovery frequently emerges during thermal runaway initiation, a phenomenon that conventional theories fail to explain. Here, our study develops a new multiphysics mechanism to explain voltage recovery, termed gas-driven short disconnection, whereby internal gas pressure mechanically disengages short-circuit contacts and causes the cell voltage to rebound. This mechanism incorporates gas generation and its structural impact on the short circuit. Real-time optical and thermal imaging and X-ray computed tomography reveal fluid-structure interaction between internal gas flow and adjacent shorting contacts. We establish a mechanistic framework linking gas-driven short disconnection to cell-level voltage and temperature responses, elucidating the extension–truncation pattern of voltage recovery. Furthermore, thermal regime maps show that a voltage recovery duration exceeding 5 s correlates with limited temperature rise below 150 °C, indicating that sustained short-circuit disconnection suppresses Joule heating. Additionally, a dimensionless criterion is deduced from scaling analysis for physical plausibility of gas-driven short disconnection in mechanically abused cells. This finding inspires smart venting control, which regulates gas release to maintain the internal pressure while dissipating gas enthalpy, thereby providing a device-level strategy for thermal runaway mitigation.

Gas-driven short disconnection↗

NASA NTRS1972

Status of power generation experiments in the NASA Lewis closed-cycle MHD facility.

In this paper the design and operation of the closed-cycle MHD facility is discussed and results obtained in recent experiments are presented. The main components of the facility are a compressor, recuperative heat exchanger (preheater), heater, nozzle, MHD channel with 28 pairs of thoriated tungsten electrodes, cesium condenser, and an argon cooler. The heater can supply 1.1 MW of thermal power to a 2.27 kg/sec gas stream. The facility has been operated at temperatures up to 2100 K with a cesium-seeded argon working fluid. At low magnetic field strengths (B = 0.2 T), the open circuit voltage, Hall voltage and short circuit current obtained are 90, 69, and 47 percent of the theoretical equilibrium values, respectively. The Hall voltage and short circuit current decrease sharply with increasing magnetic field strength, however. Comparison of these data with a wall and boundary layer leakage theory indicates that the generator has shorting paths in the Hall direction.

Sovie, R. J.↗

DOE OSTI2020

Universal free-energy landscape produces efficient and reversible electron bifurcation

For decades, it was unknown how electron-bifurcating systems in nature prevented energy-wasting short-circuiting reactions that have large driving forces, so synthetic electron-bifurcating molecular machines could not be designed and built. The underpinning free-energy landscapes for electron bifurcation were also enigmatic. We predict that a simple and universal free-energy landscape enables electron bifurcation, and we show that it enables high-efficiency bifurcation with limited short-circuiting (the EB scheme). The landscape relies on steep free-energy slopes in the two redox branches to insulate against short-circuiting using an electron occupancy blockade effect, without relying on nuanced changes in the microscopic rate constants for the short-circuiting reactions. The EB scheme thus unifies a body of observations on biological catalysis and energy conversion, and the scheme provides a blueprint to guide future campaigns to establish synthetic electron bifurcation machines.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2011

Composite Thermal Switch

Lithium primary and lithium ion secondary batteries provide high specific energy and energy density. The use of these batteries also helps to reduce launch weight. Both primary and secondary cells can be packaged as high-rate cells, which can present a threat to crew and equipment in the event of external or internal short circuits. Overheating of the cell interior from high current flows induced by short circuits can result in exothermic reactions in lithium primary cells and fully charged lithium ion secondary cells. Venting of the cell case, ejection of cell components, and fire have been reported in both types of cells, resulting from abuse, cell imperfections, or faulty electronic control design. A switch has been developed that consists of a thin layer of composite material made from nanoscale particles of nickel and Teflon that conducts electrons at room temperature and switches to an insulator at an elevated temperature, thus interrupting current flow to prevent thermal runaway caused by internal short circuits. The material is placed within the cell, as a thin layer incorporated within the anode and/or the cathode, to control excess currents from metal-to-metal or metal-to-carbon shorts that might result from cell crush or a manufacturing defect. The safety of high-rate cells is thus improved, preventing serious injury to personnel and sensitive equipment located near the battery. The use of recently available nanoscale particles of nickel and Teflon permits an improved, homogeneous material with the potential to be fine-tuned to a unique switch temperature, sufficiently below the onset of a catastrophic chemical reaction. The smaller particles also permit the formation of a thinner control film layer (<50 m), which can be incorporated into commercial high-rate lithium primary and secondary cells. The innovation permits incorporation in current lithium and lithium-ion cell designs with a minimal impact on cell weight and volume. The composite thermal switch (CTS(TradeMark)) coating can be incorporated in either the anode or cathode or both. The coating can be applied in a variety of different processes that permits incorporation in the cell and electrode manufacturing processes. The CTS responds quickly and halts current flow in the hottest parts of the cell first. The coating can be applied to metal foil and supplied as a cell component onto which the active electrode materials are coated.

McDonald, Robert↗

NASA NTRS1979

Application of the superposition principle to solar-cell analysis

The superposition principle of differential-equation theory - which applies if and only if the relevant boundary-value problems are linear - is used to derive the widely used shifting approximation that the current-voltage characteristic of an illuminated solar cell is the dark current-voltage characteristic shifted by the short-circuit photocurrent. Analytical methods are presented to treat cases where shifting is not strictly valid. Well-defined conditions necessary for superposition to apply are established. For high injection in the base region, the method of analysis accurately yields the dependence of the open-circuit voltage on the short-circuit current (or the illumination level).

Lindholm, F. A.↗

DOE OSTI2020

Developing inductively driven diagnostic X-ray sources to enable transformative radiography and diffraction capabilities on Z

Penetrating X-rays are one of the most effective tools for diagnosing high energy density experiments, whether through radiographic imaging or X-ray diffraction. To expand the X-ray diagnostic capabilities at the 26-MA Z Pulsed Power Facility, we have developed a new diagnostic X-ray source called the inductively driven X-pinch (IDXP). This X-ray source is powered by a miniature transmission line that is inductively coupled to fringe magnetic fields in the final power feed. The transmission line redirects a small amount of Zs magnetic energy into a secondary cavity where 150+ kA of current is delivered to a hybrid X-pinch. In this report, we describe the multi-stage development of the IDXP concept through experiments both on Z and in a surrogate setup on the 1 MA Mykonos facility. Initial short-circuit experiments to verify power ow on Z are followed by short-circuit and X-ray source development experiments on Mykonos. The creation of a radiography-quality X-pinch hot spot is verified through a combination of X-ray diode traces, laser shadowgraphy, and source radiography. The success of the IDXP experiments on Mykonos has resulted in the design and fabrication of an IDXP for an upcoming Z experiment that will be the first-ever X-pinch fielded on Z. We have also pursued the development of two additional technologies. First, the extended convolute post (XCP) has been developed as an alternate method for powering diagnostic X-pinches on Z. This concept, which directly couples the current owing in one of the twelve Z convolute posts to an X-pinch, greatly increases the amount of available current relative to an IDXP (900 kA versus 150 kA). Initial short-circuit XCP experiments have demonstrated the efficacy of power ow in this geometry. The second technology pursued here is the inductively driven transmission line (IDTL) current monitor. These low-current IDTLs seek to measure the current in the final power feed with high fidelity. After three generations of development, IDTL current monitors frequently return cleaner current measurements than the standard B-dot sensors that are fielded on Z. This is especially true on high-inductance experiments where the harshest conditions are created in the nal power feed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS2003

New Active Optical Technique Developed for Measuring Low-Earth-Orbit Atomic Oxygen Erosion of Polymers

Polymers such as polyimide Kapton (DuPont) and Teflon FEP (DuPont, fluorinated ethylene propylene) are commonly used spacecraft materials because of desirable properties such as flexibility, low density, and in the case of FEP, a low solar absorptance and high thermal emittance. Polymers on the exterior of spacecraft in the low-Earth-orbit (LEO) environment are exposed to energetic atomic oxygen. Atomic oxygen reaction with polymers causes erosion, which is a threat to spacecraft performance and durability. It is, therefore, important to understand the atomic oxygen erosion yield E (the volume loss per incident oxygen atom) of polymers being considered in spacecraft design. The most common technique for determining E is a passive technique based on mass-loss measurements of samples exposed to LEO atomic oxygen during a space flight experiment. There are certain disadvantages to this technique. First, because it is passive, data are not obtained until after the flight is completed. Also, obtaining the preflight and postflight mass measurements is complicated by the fact that many polymers absorb water and, therefore, the mass change due to water absorption can affect the E data. This is particularly true for experiments that receive low atomic oxygen exposures or for samples that have a very low E. An active atomic oxygen erosion technique based on optical measurements has been developed that has certain advantages over the mass-loss technique. This in situ technique can simultaneously provide the erosion yield data on orbit and the atomic oxygen exposure fluence, which is needed for erosion yield determination. In the optical technique, either sunlight or artificial light can be used to measure the erosion of semitransparent or opaque polymers as a result of atomic oxygen attack. The technique is simple and adaptable to a rather wide range of polymers, providing that they have a sufficiently high optical absorption coefficient. If one covers a photodiode with a uniformly thick sheet of semitransparent polymer such as Kapton H polyimide, then as atomic oxygen erodes the polymer, the short-circuit current from the photodiode will increase in an exponential manner with fluence. This nonlinear response with fluence results in a lack of sensitivity for measuring low atomic oxygen fluences. However, if one uses a variable-thickness polymer or carbon sample, which is configured as shown in the preceding figure, then a linear response can be achieved for opaque materials using a parabolic well for a circular geometry detector or a V-shaped well for a rectangular-geometry detector. Variable-thickness samples can be fabricated using many thin polymer layers. For semitransparent polymers such as Kapton H polyimide, there is an initial short-circuit current that is greater than zero. This current has a slightly nonlinear dependence on atomic oxygen fluence in comparison to opaque materials such as black Kapton as shown in the graph. For this graph figure, the total thickness of Kapton H was assumed to be 0.03 cm. The photodiode short-circuit current shown in the graph was generated on the basis of preliminary measurements-a total reflectance rho of 0.0424 and an optical absorption coefficient a of 146.5 cm(sup -1). In addition to obtaining on-orbit data, the advantage of this active erosion and erosion yield measurement technique is its simplicity and reliance upon well-characterized fluence witness materials as well as a nearly linear photodiode short-circuit current dependence upon atomic oxygen fluence. The optical technique is useful for measuring either atomic oxygen fluence or erosion, depending on the information desired. To measure the atomic oxygen erosion yield of a test material, one would need to have two photodiode sensors, one for the test material and one that uses a known erosion yield material (such as Kapton) to measure the atomic oxygen fluence.

Banks, Bruce A.↗

DOE OSTI2023

Real-Time Model-Adaptive Relaying Applied to Microgrid Protection

In microgrids, the short-circuit current magnitude is significantly limited by more than an order of magnitude due to the relatively small inverter-based resources. Commercially available protective devices for distribution cannot reliably protect a microgrid due to their dependence on the magnitude of the fault current. Moreover, overcurrent relays typically cannot function properly for a microgrid because they are incapable of detecting faults and/or performing the coordination between the relays in inverter-based microgrids operated in the islanded mode. This paper proposes a model-adaptive relay designed to adjust the relay curves based on the available generation and the network topology. The proposed method runs a real-time model of the microgrid, which gathers information from the network to calculate the available short-circuit current in the specified node. The fault current from the model is then used for the adaptive algorithm to calculate the relay settings, considering coordination with the downstream fuses and upstream reclosers. This work presents the validation of the proposed method in Hardware-in-the-Loop, in a hardware testbed as well as field deployed in a real microgrid in East-Tennessee.

24 POWER TRANSMISSION AND DISTRIBUTION↗