Lead-Free Semiconductors: Phase-Evolution and Superior Stability of Multinary Tin Chalcohalides
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36 MATERIALS SCIENCE↗
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Magneto-optical response of the magnetic semiconductors EUCd 2 X 2 (X = P, As, SB)
n this study, we identify EuCd 2 X 2 (for X = P, As, Sb) as a series of magnetic semiconductors. We examine how the band gap of the series responds to X changing from phosphorus (P), to arsenic (As), and finally antimony (Sb). We characterize the samples using electronic transport and magnetization measurements. Based on infrared spectroscopy, we find that the band gap reduces progressively from 1.23 eV in EuCd 2 P 2 , to 0.77 eV in EuCd 2 As 2 , and finally 0.52 eV in EuCd 2 Sb 2 . In a magnetic field, all three systems show a strong response and their band gaps decrease at 4 K. This decrease is non-monotonic as we change X. It is strongest in the phosphorous compound and weakest in the antimony compound. For all the three compositions, EuCd 2 X 2 remains a semiconductor up to the highest magnetic field applied (16 T).
36 MATERIALS SCIENCE↗
Quantized electronic transitions in electrodeposited copper indium selenide nanocrystalline homojunctions
Pairing semiconductors with electrochemical processing offers an untapped opportunity to create novel nanostructures for practical devices. Here we report the results of one such pairing: the in-situ formation of highly-doped, interface-matched, sharp nanocrystalline homojunctions (NHJs) with single step electrodeposition of two copper-indium-selenide (CISe) compounds on flexible foil. It produces a homogenous film, comprising inherently ordered, 3-dimensional interconnected network of pn -CISe NHJs. These CISe NHJs exhibit surprising non-linear emissions, quantized transitions, large carrier mobility, low trap-state-density, long carrier lifetime and possible up-conversion. They facilitate efficient separation of minority carriers, reduce recombination and essentially function like quantum materials. This approach mitigates the material issues and complex fabrication of incumbent nanoscale heterojunctions; it also overcomes the flexibility and scale-up challenges of conventional planar pn junctions. The self-stabilized CISe NHJ film can be roll-to-roll processed in ambient atmosphere, thus providing a promising platform for a range of optoelectronic technologies. This concept exemplified by CISe compounds can be adapted to create nano-scale pn junctions with other inorganic semiconductors.
36 MATERIALS SCIENCE↗
Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials
Abstract This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing through a sample under a voltage bias. Here, the sample is located between rotating crossed polarizers, and camera images are obtained at each point to determine the electric field. The evaluation procedure is demonstrated using data acquired on a CdZnTeSe quasi-hemispheric semiconductor gamma-ray detector. In addition to CdTe-related compounds, the method can be used for various other materials showing $$\overline{4}3m$$ 4 ¯ 3 m symmetry such as GaAs, CdTe, GaP, 3C-SiC, and ZnS. Furthermore, it can be generalized to other crystalline materials showing the Pockels effect. The method can be used to probe the space charge and the electric field in several kinds of electronic components and devices, as well as provide useful data on the role of defects, contact configurations and other surface and bulk inhomogeneities in the material that can affect the distribution of the internal electric field.
36 MATERIALS SCIENCE↗
Machine-Learning-Assisted Enhancement of Perovskite Stability and Photovoltaic Performance
Lab scale perovskite solar cells (PSCs) have reached power conversion efficiencies on par with silicon solar cells. Their potential for low-cost manufacturing combined with high performance make them attractive for commercialization. The major challenge impeding widespread development of PSCs is their stability. Halide perovskites are vulnerable to decomposition in the presence of moisture, oxygen, light, and heat. Furthermore, the chemical differences between halide perovskites and conventional semiconductors used in photovoltaics (e.g., silicon, chalcogenides, and III-V compounds) may render established accelerated lifetime testing protocols inaccurate.
14 SOLAR ENERGY↗
Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure
An optically pumped semiconductor laser based on a type-II CdS/ZnSe nanoheterostructure containing 10 quantum wells (QWs) was studied. The structure was grown by metal-organic vapour phase epitaxy on a GaAs substrate. The lifetime of electron-hole pairs at a low pump level was measured by luminescence decay to be ∼0 ns. The peak power of the microcavity semiconductor laser at room temperature and longitudinal pumping by a repetitively pulsed N{sub 2} laser was 7.2 W at a wavelength of 514 nm. The relatively low laser slope efficiency (0.35 %) is explained by amplified spontaneous emission propagating along the structure. The peak power and efficiency of the laser in the case of transverse pumping increase to 70 W and 3.5 %, respectively. (lasers)
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Single crystal synthesis and magnetic properties of a Shastry-Sutherland lattice compound BaNd 2 ZnS 5
In this study, single crystals of a Shastry-Sutherland magnetic semiconductor, BaNd 2 ZnS 5 , were synthesized through a high-temperature solution growth technique. Physical properties were characterized by powder and single crystal x-ray diffraction, temperature- and field-dependent magnetization, and temperature-dependent specific heat measurements. BaNd 2 ZnS 5 orders antiferromagnetically at 2.9 K, with magnetic moments primarily aligned within the $ab$ -plane. Magnetic isothermal measurements show metamagnetic transitions at ~ 15 kOe for the [110] direction and ~ 21 kOe for the [100] direction. Estimated magnetic entropy suggests a double ground state for each neodymium ion.
36 MATERIALS SCIENCE↗
The underappreciated lone pair in halide perovskites underpins their unusual properties
The presence of 6s 2 (5s 2 ) lone-pair electrons on the B-site Pb (Sn) in all-inorganic and hybrid halide ABX 3 perovskites distinguishes these materials from the familiar tetrahedral semiconductors traditionally employed in optoelectronics and is key to many of their appealing properties. These electrons are stereochemically active, albeit often in a hidden fashion, resulting in unusual and highly anharmonic lattice dynamics that are linked to many of the special optoelectronic properties displayed by this material class. This article describes the connections between this atypical electronic configuration and the electronic structure and lattice dynamics of these compounds. We illustrate how the lone pair leads to favorable bandwidths and band alignments, mobile holes, large ionic dielectric response, large positive thermal expansion, and even possibly defect-tolerant electronic transport. Taken together, the evidence suggests that other high-performing semiconductors may be found among compounds with lone-pair-bearing cations in high symmetry environments and a high degree of connectivity between atoms.
36 MATERIALS SCIENCE↗
Machine-learned impurity level prediction for semiconductors: the example of Cd-based chalcogenides
The ability to predict the likelihood of impurity incorporation and their electronic energy levels in semiconductors is crucial for controlling its conductivity, and thus the semiconductor's performance in solar cells, photodiodes, and optoelectronics. The difficulty and expense of experimental and computational determination of impurity levels makes a data-driven machine learning approach appropriate. In this work, we show that a density functional theory-generated dataset of impurities in Cd-based chalcogenides CdTe, CdSe, and CdS can lead to accurate and generalizable predictive models of defect properties. By converting any semiconductor + impurity system into a set of numerical descriptors, regression models are developed for the impurity formation enthalpy and charge transition levels. These regression models can subsequently predict impurity properties in mixed anion CdX compounds (where X is a combination of Te, Se and S) fairly accurately, proving that although trained only on the end points, they are applicable to intermediate compositions. We make machine-learned predictions of the Fermi-level-dependent formation energies of hundreds of possible impurities in 5 chalcogenide compounds, and we suggest a list of impurities which can shift the equilibrium Fermi level in the semiconductor as determined by the dominant intrinsic defects. Machine learning predictions for the dominating impurities compare well with DFT predictions, revealing the power of machine-learned models in the quick screening of impurities likely to affect the optoelectronic behavior of semiconductors.
36 MATERIALS SCIENCE↗
Molecular beam epitaxy of superconducting zirconium nitride on GaN substrates
Epitaxial integration of metals and semiconductors can enable enhanced performance and novel functionality. Achieving such pristine interfaces with superconducting materials is of increasing interest for quantum devices and detectors, but the experimental demonstration remains challenging, given the very limited studies on single crystalline systems. To expand the potential materials for these systems, this work explores the deposition of zirconium nitride superconducting thin films on GaN substrates at various temperatures using molecular beam epitaxy. A general trend of decreasing superconducting critical temperature is observed as the deposition temperature is reduced. The optical properties reveal a transition from metallic to dielectric behavior with colder deposition. The plasma frequency of the metallic films is also observed to be a function of growth temperature. These results pave the way for the integration of a highly tunable metal nitride with a well-established semiconductor system.
36 MATERIALS SCIENCE↗
2D Homologous Series SrFM n BiS n +2 (M = Pb, Ag 0.5 Bi 0.5 ; n = 0, 1) and Commensurately Modulated Sr 2 F 2 Bi 2/3 S 2
In this work, we report three new mixed-anion two-dimensional (2D) compounds: SrFPbBiS 3 , SrFAg 0.5 Bi 1.5 S 3 , and Sr 2 F 2 Bi 2/3 S 2 . Their structures as well as the parent compound SrFBiS 2 were refined using single-crystal X-ray diffraction data, with the sequence of SrFBiS 2 , SrFPbBiS 3 , and SrFAg 0.5 Bi 1.5 S 3 defining the new homologous series SrFM n BiS n+2 (M = Pb, Ag 0.5 Bi 0.5 ; n= 0, 1). Sr 2 F 2 Bi 2/3 S 2 has a different structure, which is modulated with a q vector of 1/3b* and was refined in superspace group X2/m(0 β 0)00 as well as in the 1x3x1 superstructure with space group C2/m (with similar results). Sr 2 F 2 Bi 2/3 S 2 features hexagonal layers of alternating [Sr 2 F 2 ] 2+ and [Bi 2/3 S 2 ] 2- , and the modulated structure arises from the unique ordering pattern of Sr 2+ cations. SrFPbBiS 3 , SrFAg 0.5 Bi 1.5 S 3 , and Sr 2 F 2 Bi 2/3 S 2 are semiconductors with band gaps of 1.31, 1.21, and 1.85 eV, respectively. The latter compound exhibits room temperature red photoluminescence at ~ 700 nm.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Optimization of Source Material for in-situ Arsenic Doping via Vapor Transport Deposition of CdTe Films
In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 1018-1020 cm-3. Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3x1017 cm-3–1x1018cm-3. In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.
41 EE - Solar Energy Technologies Office (EE-4S)↗
Solution-Phase Synthesis and Photoluminescence of Quaternary Chalcohalide Semiconductors
Mixed-metal chalcohalide semiconductors have emerged as promising candidates for photovoltaic applications. However, preparation of these multinary compounds using solution-phase techniques remains particularly challenging compared to traditional solid-state methods. To fully harness their potential, it is desirable to develop synthetic methods that enable control over both the phase purity and dimensionality of chalcohalides. In this work, we report the solution-phase synthesis of Pb 2 SbS 2 I 3 and Pb 2 BiS 2 I 3 quaternary chalcohalides using readily available precursors. Fine tuning of reaction parameters allows for the isolation of rod-like morphologies with tunable diameters and aspect ratios. The quaternary chalcohalides display photoluminescence as an ensemble as well as at the single particle level, as demonstrated using fluorescence microscopy. We further evaluate the relative stability and band gap of Pb 2 SbS 2 I 3 polymorphs and their coloring patterns using electronic structure calculations. The synthetic methods developed here will motivate the study of ever more complex chalcohalides and other multinary semiconductors for new technological applications.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
From Salt to Electronics: Heteroepitaxy and GaAs Solar Cells
This paper presents work on the heteroepitaxy of salts, specifically fluorides, on semiconductor and heteroepitaxy of semiconductor on salts. Fluorides layers are deposited on commercial Gallium Arsenide (GaAs) wafers followed by the heteroepitaxial growth of GaAs using metal organic chemical vapor deposition (MOCVD). The fluoride layers consist of 2 lattice-engineered layers of alkaline-earth compounds to match with GaAs, and are used to sandwich another alkaline-earth compound with higher water-solubility as sacrificial layer. The triple fluoride layers enable liftoff of free-standing semiconductor films which can be further transferred to desirable substrates. 2D-X-ray Diffraction (2D-XRD) measurements confirm epitaxial growth of both the fluorides and the subsequently grown GaAs films. Single junction (SJ) solar cell devices based on thus prepared films show a power conversion efficiency (PCE) of 10.3% under 1 sun illumination. After the completion of device fabrications, the GaAs film is lifted off from the substrate by a novel water-assisted epitaxial liftoff (H 2 O-ELO) technique and transferred to a cheaper substrate. The original GaAs wafer is recycled and reused twice. Devices based on reused substrates show no significant degradation in performance. Lastly, the semiconductor-salt-semiconductor scheme has great implications in high performance, flexible, and large area electronics.
14 SOLAR ENERGY↗
Extreme γ –Ray Radiation Tolerance of Spectrometer–Grade CsPbBr 3 Perovskite Detectors
The perovskite compound CsPbBr 3 has recently been discovered as a promising room-temperature semiconductor radiation detector, offering an inexpensive and easy-to-manufacture alternative to the current benchmark material Cd 1–x Zn x Te (CZT). The performance of CsPbBr 3 sensors is evaluated under harsh conditions, such as high radiation doses often found in industrial settings and extreme radiation in space. Results show minimal degradation in detector performance after exposure to 1 Mrad of Co-60 gamma radiation, with no significant change to energy resolution or hole mobility and lifetime. Additionally, many of the devices are still functional after being exposed to a 10 Mrad dose over 3 days, and those that do not survive can still be refabricated into working detectors. Notably, these results suggest that the failure mode in these devices is likely related to the interface between the electrode and material and their reaction, or the electrode itself and not the material itself. Overall, the study suggests that CsPbBr 3 has high potential as a reliable and efficient radiation detector in various applications, including those involving extreme fluxes and energies of gamma-ray radiation.
36 MATERIALS SCIENCE↗
Epitaxial growth of oriented CoO films by radio-frequency sputtering deposition
Rock-salt CoO is a p-type semiconductor and its Neel temperature is close to room temperature. CoO-based compounds are known as promising systems for renewable energy harvest with high efficiency. CoO with catalytic and exchange bias properties can be widely used for industrial applications. In this paper, we report high-quality stable CoO(111) and (100) films epitaxially grown on c-cut (0001) and r-cut ($10\bar1$2) alpha-Al 2 O 3 substrates, respectively, using radio-frequency sputtering deposition. X-ray diffraction (XRD) measurements revealed that the CoO films had a rock-salt structure (Fm3m) with lattice constants of 4.2477 Å and 4.2617 Å for film grown on (0001) and ($10\bar1$2) α-Al 2 O 3 substrates, respectively. CoO films with the best crystal quality were grown at a substrate temperature of similar to ~700°C. XRD measurements of CoO(111) films indicated a lack of structural residual strain, whereas CoO(100) films had substantial amounts of structural strain. X-ray reflectivity (XRR) and transmission electron microscopy measurements showed neither oxygen vacancy nor defects in both CoO(111) and (100) films. Further, XRR revealed that the mean electron density of the CoO films was nearly identical to a pure CoO and that the films were considerably stable under the atmosphere.
36 MATERIALS SCIENCE↗
Homologous Alkali Metal Copper Rare-Earth Chalcogenides A 2 Cu 2 n Ln 4 Q 7+ n ( n = 1, 2, 3)
Twenty-seven new members of the A 2 Cu 2n Ln 4 Q 7+n (A = Cs, Rb; Ln = La-Nd, Sm, Gd-Yb; Q = S, Se) homologous series were synthesized in one of three structural types (indicated by n = 1, 2, 3). All the compounds contained 3D frameworks with alkali-metal-containing tunnels. For each increment in n, one Cu 2 Q was added, which was incorporated into the framework as an edge-sharing tetrahedron by replacing a square planar chalcogenide site. High-throughput DFT calculations predicted many of the phases to be thermodynamically stable. These predictions were compared with the synthesis results for the phases formed in each composition space. In the syntheses, heavier lanthanides showed a preference to start forming the n = 3 ACu 3 Ln 2 Q 5 , which is consistent with the predictions. RbCuNd 2 Se 4 and RbCuTb 2 Se 4 were found to be thermally stable under vacuum at temperatures up to 1000 °C. Optical measurements revealed band gaps of 1.55(5) and 1.62(5) eV for CsCuCe 2 Se 4 and RbCuTb 2 Se 4 , respectively, and a work function of 4.83(5) eV for CsCuPr 2 Se 4 . Additionally, some n = 3 ACu 3 Ln 2 Qs compounds exhibit a negative phonon mode because of a copper atom coordination, which may distort to a trigonal planar geometry at sufficiently low temperatures. The dynamic instabilities and the predicted distortion in the copper tetrahedra for the n = 3 ACu 3 Ln 2 Q 5 compounds were found to have a linear relationship with the atomic number of the lanthanides and the electronegativity of the lanthanides. In conclusion, the A 2 Cu 2 n Ln 4 Q 7+n compounds can potentially find application as high-temperature thermoelectric materials and other semiconductors.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗