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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Electronic origin of half-metal to semiconductor transition and colossal magnetoresistance in spinel HgCr 2 Se 4

Half metals are ferromagnets hosting spin-polarized conducting carriers and are crucial for spintronics applications. The chromium spinel HgCr 2 Se 4 represents a unique type of half-metal, which features a half-metal to semiconductor transition (HMST) and exhibits colossal magnetoresistance (CMR) across the ferromagnetic-paramagnetic (FM-PM) transition. Here, using angle-resolved photoemission spectroscopy, we find that the Fermi surface of n-type HgCr 2 Se 4 (n–HgCr 2 Se 4 ) consists of a single electron pocket which moves above the Fermi level (E F ) upon the FM-PM transition, leading to the HMST. Such a Lifshitz transition manifests a giant band splitting which originates from the exchange interaction unveiled with a specific chemical nonstoichiometry. The exchange band splitting and the chemical nonstoichiometry are two key ingredients to the HMST and CMR, consistent with our ab initio calculation. Our findings provide spectroscopic evidence of the electronic origin of the anomalous properties of HgCr 2 Se 4 , which address the unique phase transition in half-metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Fermi surface topology and magnetotransport properties of superconducting Pd 3 Bi 2 Se 2

Pd 3 Bi 2 Se 2 is a rare realization of a superconducting metal with a non-zero topological invariant. Here, in this study, we report the growth of high-quality single crystals of layered Pd 3 Bi 2 Se 2 with a superconducting transition at T c ≈ 0.80 K and upper critical fields of ~10 mT and ~5 mT for the in plane and out-of-plane directions, respectively. Our density functional theory (DFT) calculations reveal three pairs of doubly degenerate bands crossing the Fermi level all displaying clear three dimensional dispersion consistent with the overall low electronic anisotropy (<2). The multiband electronic nature of Pd 3 Bi 2 Se 2 is evident in magneto-transport measurements, yielding a sign changing Hall resistivity at low temperatures. The magnetoresistance is non-saturating and follows Kohler’s scaling rule. We interpret the magneto-transport data in terms of open orbits that are revealed in the DFT calculated Fermi surface. de Haas-van Alphen (dHvA) oscillation measurements using torque magnetometry on single crystals yield four frequencies for out-of-plane fields: F α = (150 ± 26) T, F β = (293 ± 10) T, F γ = (375 ± 20) T and F η = (1017 ± 12) T, with the low frequency dominating the spectrum. Through the measurement of angular dependent dHvA oscillations and DFT calculations we identify the F α frequency with an approximately ellipsoidal electron pocket centered on the L 2 point of the Brillouin zone. Lifshitz-Kosevich analysis of the dHvA oscillations reveals a small cyclotron effective mass m* = (0.11 ± 0.02)m 0 and a nontrivial Berry phase for the dominant orbit. The presence of nontrivial topology in a bulk superconductor positions Pd 3 Bi 2 Se 2 as a potential candidate for exploring topological superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Highly tunable band inversion in AB 2 X 4 (A=Ge, Sn, Pb; B=As, Sb, Bi; X=Se, Te) compounds

Topological materials have been discovered so far largely by searching for existing compounds in crystallographic databases, but there are potentially new topological materials with desirable features that have not been synthesized. One of the desirable features is high tunability resulting from the band inversion with a very small direct band gap, which can be tuned by changes in pressure or strain to induce a topological phase transition. Here, using density-functional theory (DFT) calculations, we have studied the septuple layered AB 2 X 4 series compounds, where A=(Ge, Sn and Pb), B=(As, Sb and Bi), and X=(Se and Te). With the DFT thermodynamic stability validated by the already-reported compounds in these series, we predict stable Se compounds, which are not found in crystallographic database. Among them, we find that GeBi 2 Se 4 and GeSb 2 Se 4 having a small direct band gap at the Z point are very close to a strong topological insulator, which can be tuned by a moderate pressure to induce the band inversion. Importantly, the topological features with the small direct band gap are well isolated in both momentum and energy windows, which offers high tunability for studying the topological phase transition.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Band structure of Bi surfaces formed on Bi 2 Se 3 upon exposure to air

Bi 2 Se 3 has been the focus of intense interest over the past decade due to its topological properties. Bi surfaces are known to form on Bi 2 Se 3 upon exposure to atmosphere, but their electronic structure has not been investigated. Here, we report band structure measurements of such Bi surfaces using angle-resolved photoemission spectroscopy. Measured spectra can be well explained by the band structure of a single bilayer of Bi on Bi 2 Se 3 , and show that Bi surfaces consistently dominate the photoemission signal for air exposure times of at least 1 hour. These results demonstrate that atmospheric effects should be taken into consideration when identifying two-dimensional transport channels, and when designing surface-sensitive measurements of Bi 2 Se 3 , ideally limiting air exposure to no more than a few minutes.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Solid-phase heteroepitaxy of oriented Sb 2 Se 3 on GaAs for birefringent thin films

Here, we investigate the amorphous-to-crystalline transformation of antimony selenide (Sb 2 Se 3 ) on UHV-prepared GaAs (001) substrates. In the bulk orthorhombic form, Sb 2 Se 3 is a layered quasi-1D semiconductor with highly anisotropic properties of interest for optical and electronic devices. We find that an amorphous layer deposited by molecular beam epitaxy annealed at or above 230 °C yields a textured-epitaxial structure among some randomly oriented domains. The textured-epitaxial Sb 2 Se 3 grains are oriented with the covalently bonded “1D axis” constrained in-plane to GaAs [110] and with multiple van der Waals (hk0) orientations out-of-plane. The same texture was achieved exclusively without randomly oriented grains using continuous-wave laser radiation, highlighting the use of thermal and optical methods to yield anisotropic crystalline Sb 2 Se 3 films directly from the amorphous phase. Polarized reflectance and polarized microscopy confirm the unique state of in-plane birefringence in the crystallized thin film. Overall, we show that solid-phase heteroepitaxy provides additional pathways to the integration of low-symmetry chalcogenide semiconductors for demanding applications where the inherent anisotropy needs to be preserved.

Xiao, Kelly [Stanford Univ., CA (United States)] (↗
DOE OSTI2023

Thermally generated spin current in the topological insulator Bi 2 Se 3

We present measurements of thermally generated transverse spin currents in the topological insulator Bi2Se3, thereby completing measurements of interconversions among the full triad of thermal gradients, charge currents, and spin currents. We accomplish this by comparing the spin Nernst magneto-thermopower to the spin Hall magnetoresistance for bilayers of Bi 2 Se 3 /CoFeB. We find that Bi 2 Se 3 does generate substantial thermally driven spin currents. A lower bound for the ratio of spin current density to thermal gradient is $\frac{J_{s}}{∇_{x}T}$ = (4.9 ± 0.9) × 10 6 ($\frac{ℏ}{2e}$) $\frac{A m^{-2}}{K μm^{-1}}$, and a lower bound for the magnitude of the spin Nernst ratio is -0.61 ± 0.11. The spin Nernst ratio for Bi 2 Se 3 is the largest among all materials measured to date, two to three times larger compared to previous measurements for the heavy metals Pt and W. Strong thermally generated spin currents in Bi 2 Se 3 can be understood via Mott relations to be due to an overall large spin Hall conductivity and its dependence on electron energy.

36 MATERIALS SCIENCE↗
DOE OSTI2024

TRUST Sensors in Environments: Fiber Optic Displacement (SE-FOD) Report, Release FY24

The objective of the Delivery Environments (DE) Testbeds to Reduce Uncertainty in Simulations and Tests (TRUST) project is to quantify and help increase confidence in specific areas of computational and experimental capabilities that are applicable to the development, on-target assessment, and qualification of current and future delivery environments. More complete quantification of confidence in experimental and computational capabilities and the sufficient increase of confidence in those capabilities is critical to improving weapons engineering design, qualification, and assessment efforts that are critical to the current and future stockpile. This work uses and provides feedback on analysis tools and experimental results databases for efficient and responsive engineering which are currently under development. Under the TRUST work package, there are five testbeds and their associated engineering analysis baseline models (EABMs): 1. Contact Thermal Conductivity (CTC), 2. Nonlinear Dynamics (ND), 3. Sensors in Environments: Accelerometers (SE-A), 4. Sensors in Environments: Fiber Optic Displacement Gauges (SE-FOD), and 5. Sensors in Environments: Thermocouples (SE-TC). The TRUST project uses single-feature testbeds to quantify uncertainties in specific models and experiments and to identify capability development needs that can help to reduce these uncertainties. Each testbed is designed, configured, and tested in collaboration with groups with design and experimental capability: E-14 and MPA-CINT. The complementary simulations are conducted using W-13 analysis tools and stored in model repositories with plans for incremental progress toward EABM requirements. W-13 extends and exercises the testbed simulations in collaboration with experimentalists for uncertainty quantification of current and future materials, geometries, and environments. Additionally, TRUST is intended to provide engineers in W-13 and E-14 with experience in both numerical simulations and experimental methods through cross-discipline collaborations. Following the introduction to the TRUST project, the remainder of this report focuses on experimental, modeling and simulation, and analysis efforts conducted in FY24 relevant to the TRUST Sensors in Environments: Fiber Optic Displacement (SE-FOD) testbed.

42 ENGINEERING↗
NASA NTRSDate not supplied

Mixed-Domain Charge Transport in the S-Se System from First Principles

Lithium-sulfur (Li-S) batteries are emerging systems heralded for the inexpensive cathode component (in S)and higher energy density than that of typical Li-ion batteries [1–5]. For the latter reason in particular, they are drawing high levels of interest for long-range electric air-craft applications where high gravimetric energy density is of utmost importance. Unfortunately, S by itself has a much too low electrical conductivity to be useful asa stand-alone cathode material. One effort to alleviate these shortcomings is to alloy sulfur with selenium [6–13],which is expected to improve the paltry conductivity of S as Se, depending on the phase, is 10∼30 times more conductive. This, however, comes at the cost of the heavier mass of Se that works against the gravimetric energy density. The charge transport behavior in the S1−xSex alloy system, not yet fully known or understood, is necessary for one to navigate the trade-offs between conductivity and other variables such as energy density en route to ultimately determining the optimum Se content, on demand. Charting carrier mobilities and conductivities in the S-Se system throughout the compositional spectrum from first principles at a predictive level is therefore critical.

Junsoo Park↗
DOE OSTI2021

Porous Cu 2 BaSn(S,Se) 4 Film as a Photocathode Using Non-Toxic Solvent and a Ball-Milling Approach

Cu 2 BaSn(S,Se) 4 (CBTSSe) has been proposed as an alternative to Cu 2 ZnSn(S,Se) 4 (CZTSSe) for solar absorbers due to its reduced propensity for antisite disorder and band tailing, while maintaining the desirable characteristics of band gap tunability, earth-abundance, and low toxicity constituent metals. However, current film deposition methods require high-vacuum conditions or toxic solvents, less desirable features for prospective large-scale production. Here, ball milling is demonstrated as a route towards a scalable processing method for CBTSSe, using a precursor ink consisting of common elements Cu 2 S, BaS, Sn, and S in low-toxicity ethanol. A final film with a thickness and average grain size on the order of 1 µm was synthesized with a band gap of 1.56 eV, corresponding to a Cu 2 BaSnS 4-x Se x (x ≈ 3) stoichiometry. A porous CBTSSe photocathode with Pt/TiO 2 /CdS overlayers was fabricated to demonstrate the photocurrent-generating capabilities of the film, yielding current densities of as high as 5.54 mA/cm 2 at 0 V versus a reversible hydrogen electrode (V/RHE) .

14 SOLAR ENERGY↗
DOE OSTI2022

Stabilization of the Polar Structure and Giant Second-Order Nonlinear Response of Single Crystal γ-NaAs 0.95 Sb 0.05 Se 2

The dearth of suitable materials significantly restricts the practical development of infrared (IR) laser systems with highly efficient and broadband tuning. Recently, γ-NaAsSe 2 is reported, and it exhibits a large nonlinear second-harmonic generation (SHG) coefficient of 590 pm V —1 at 2 µm. However, the crystal growth of γ-NaAsSe 2 is challenging because it undergoes a phase transition to centrosymmetric δ-NaAsSe 2 . Herein, the stabilization of non-centrosymmetric γ-NaAsSe 2 by doping the As site with Sb, which results in γ-NaAs 0.95 Sb 0.05 Se 2 is reported. The congruent melting behavior is confirmed by differential thermal analysis with a melting temperature of 450 °C and crystallization temperature of 415 °C. Single crystals with dimensions of 3 mm × 2 mm are successfully obtained via zone refining and the Bridgman method. The purification of the material plays a significant role in crystal growth and results in a bandgap of 1.78 eV and thermal conductivity of 0.79 Wm —1 K —1 . The single-crystal SHG coefficient of γ-NaAs 0.95 Sb 0.05 Se 2 exhibits an enormous value of |d 11 | = 648 ± 74 pm V —1 , which is comparable to that of γ-NaAsSe 2 and ≈20× larger than that of AgGaSe 2 . Importantly, the bandgap of γ-NaAs 0.95 Sb 0.05 Se 2 (1.78 eV) is similar to that of AgGaSe 2 , thus rendering it highly attractive as a high-performing nonlinear optical material.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Structural and Spectroscopic Comparison of Soft‐Se vs. Hard‐O Donor Bonding in Trivalent Americium/Neodymium Molecules

Covalency is often considered to be an influential factor in driving An 3+ vs. Ln 3+ selectivity invoked by soft donor ligands. This is intensely debated, particularly the extent to which An 3+ /Ln 3+ covalency differences prevail and manifest as the f-block is traversed, and the effects of periodic breaks beyond Pu. Herein, two Am complexes, [Am{N(E=PPh 2 ) 2 } 3 ] (1-Am, E=Se; 2-Am, E=O) are compared to isoradial [Nd{N(E=PPh 2 ) 2 } 3 ] (1-Nd, 2-Nd) complexes. Covalent contributions are assessed and compared to U/La and Pu/Ce analogues. In conclusion, through ab initio calculations grounded in UV-vis-NIR spectroscopy and single-crystal X-ray structures, we observe differences in f orbital involvement between Am–Se and Nd–Se bonds, which are not present in O-donor congeners.

Goodwin, Conrad A. P.↗
DOE OSTI2021

Structural and Spectroscopic Comparison of Soft-Se vs. Hard-O Donor Bonding in Trivalent Americium/Neodymium Molecules

Covalency is often considered to be an influential factor in driving An 3+ vs. Ln 3+ selectivity invoked by soft donor ligands. This is intensely debated, particularly the extent to which An 3+ /Ln 3+ covalency differences prevail and manifest as the f-block is traversed, and the effects of periodic breaks beyond Pu. In this work, two Am complexes, [Am{N(E=PPh 2 ) 2 } 3 ] ( 1-Am , E=Se; 2-Am , E=O) are compared to isoradial [Nd{N(E=PPh 2 ) 2 } 3 ] ( 1-Nd , 2-Nd ) complexes. Covalent contributions are assessed and compared to U/La and Pu/Ce analogues. Through ab initio calculations grounded in UV-vis-NIR spectroscopy and single-crystal X-ray structures, we observe differences in f orbital involvement between Am–Se and Nd–Se bonds, which are not present in O-donor congeners.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

High Energy Density and Stable Three-Dimensionally Structured Se-Loaded Bicontinuous Porous Carbon Battery Electrodes

Here, 3D structured Se-loaded bicontinuous porous carbon (BPC) electrodes were fabricated through colloidal templating of BPC followed by pulsed-voltage Se electrodeposition. The resultant electrodes were found to deliver a specific capacity of 665 mA h g -1 at a rate of 0.1 C, near the theoretical value for Se. When a vinylene carbonate containing electrolyte was utilized, the capacity fade over 500 cycles at 1 C rate was as small as a few percent. Impedance measurements and physical characterization of cycled electrodes indicated the exceptionally stable cycling performance was possibly due to vinylene carbonate resulting in formation of a stable SEI during cycling. Along with cycling stability, the rate performance of the 3D Se/BPC electrodes was also good. Due to the bicontinuous structure of carbonaceous current collector at rates as high as 5 C, the deliverable capacity was about 300 mA h g -1 .

25 ENERGY STORAGE↗
DOE OSTI2023

Ag Alloying in Cu 2– y Ag y Ba(Ge,Sn)Se 4 Films and Photovoltaic Devices

Trigonal Cu 2 BaGe 1–x Sn x Se 4 (CBGTSe) has recently gained interest as a potential photovoltaic absorber to target mitigation of antisite defect formation in Cu 2 ZnSn(S,Se) 4 . This study examines partial substitution of Cu by Ag as a potential approach to tune the properties of Ag-incorporated CBGTSe in the following aspects: 1) phase stability and crystal structure as a function of Ag content; 2) film morphology and grain structure; 3) charge carrier properties; 4) band positions; and 5) charge carrier kinetics and recombination. Up to 20% of Cu can be substituted by Ag in CBGTSe, while above 20% a phase mixture appears. Increasing Ag content induces larger average grain size and reduced hole carrier densities. In contrast, photoelectron spectroscopy and photoluminescence measurements reveal negligible impact of Ag substitution on ionization potential (≈5.4 eV) and electron affinity (≈3.7 eV). Also, Ag content offers negligible impact on carrier lifetimes (few ns). Consistent with these fundamental properties, solar cells based on two different Ag/(Ag + Cu) ratios (≈0% and ≈20%) show comparable power conversion efficiencies (≈2.7–2.8%). Finally, these results indicate that CBGTSe films and solar cells may be less sensitive to Ag substitution compared to Cu 2 ZnSn(S,Se) 4 , at least at the current level of absorber and device optimization.

14 SOLAR ENERGY↗
DOE OSTI2023

Anisotropic topological surface states in thin-film monoclinic Ag 2 Se

Silver chalcogenide systems have recently attracted significant attention due to their promising topological insulating properties. Here we conducted systematic low-temperature local scanning tunneling microscopy/spectroscopy and first-principles studies on the surface states of monoclinic Ag 2 Se thin films grown using molecular beam epitaxy. Through the use of quasi-particle interference patterns, we have observed evidence for topological surface states on the selenium-terminated surfaces with different types of defect densities. The results of ab initio calculations confirm the existence of nontrivial topological surface states in the monoclinic Ag 2 Se structure, for which such properties have not been previously reported. The energy dispersion determined using voltage-dependent standing wave patterns suggests that these topological states have an anisotropic Dirac cone structure. In conclusion, this discovery may lead to new applications for monoclinic Ag 2 Se in the rapidly growing fields of nanoelectronics and spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Optoelectronic and material properties of solution-processed Earth-abundant Cu 2 BaSn(S, Se) 4 films for solar cell applications

Copper barium thioselenostannate, Cu 2 BaSnS 4-x Se x (CBTSSe), absorbers employ low-toxicity and abundant metals while offering low-cost manufacturing options, controllable stoichiometry and band gap tunability (from 2 eV at x = 0 to 1.55 eV at x = 3). CBTSSe can therefore be considered a prospective candidate for maintaining or improving upon the advantages of already commercialized Cu(In,Ga)(S,Se) 2 (CIGSSe) and CdTe absorbers. Here, we focus on solution-deposited stoichiometric CBTSSe films with band gap of 1.59 eV (x ≈ 3) and explore the fundamental film properties. Temperature- and excitation-dependent photoluminescence studies reveal a dominant defect emission at ~1.5 eV and a second deep defect feature at 1.15 eV. From time-resolved terahertz measurements, we find a charge carrier (electron and hole sum) mobility of ~140 cm 2 /Vs—i.e., comparable to values in CIGSSe or Cu 2 ZnSnS 4-x Se x (CZTSSe)—as well as a two-component minority carrier lifetime. A longer-lived lifetime component (~2 ns) arises from bulk recombination. However, strong recombination at the (bare) surface leads to a ~50 ps lifetime, inferior to state-of-the-art CIGSSe or CZTSSe absorbers. This recombination issue may worsen for CBTSSe/CdS interfaces, due to a cliff-like band alignment with 0.6 eV band offset, as revealed by ultraviolet photoemission spectroscopy. A low number of charge carriers within the absorber further contributes to a high series resistance. Employing these films, we also report the highest performance achieved from solution-processed trigonal CBTSSe thin-film photovoltaic devices, with open circuit voltage, short-circuit current density, fill factor and efficiency of 470 mV, 14.3 mA/cm 2 , 43.6% and 2.9%, respectively. The physical measurements provided on the stoichiometric solution-processed CBTSSe absorber further point to critical areas for future improvement of CBTSSe and related photovoltaic cells in the quest for higher efficiency devices based on earth abundant metals.

14 SOLAR ENERGY↗
DOE OSTI2023

Evaluation of the critical behavior near ferromagnetic to paramagnetic phase transition in CrTe 1-x Se x alloys: An experimental study

For this study, we used the conventional solid-state reaction method to prepare stoichiometric samples of CrTe 1-x Se x , where 0 ≤ x ≤ 0.10, and investigated the structural and critical behavior of the prepared samples. Room temperature powder X-ray diffraction, along with Rietveld refinement, revealed the emergence of the NiAs structure with P6 3 /mmc (194) space group with increasing Se substitution. The high-temperature linear fit to inverse of the dc-susceptibility versus temperature for the mother sample resulted in an effective moment of 3.65μ B Cr with Curie-Weiss temperature near 335K, which is slightly higher than the Tc of ~332K obtained from the inflection point of magnetization versus temperature. Magnetization isotherms were employed to investigate the critical behavior of ferromagnetic CrTe 1-x Se x with 0.0 ≤ x ≤ 0.10 near their Curie temperatures (Tc). The magnetic behavior near Tc was found to follow 3D mean-field critical exponents with a second-order phase transition in all samples investigated. We fine-tuned the critical exponents (β, γ, and δ) using a combination of an iteration technique, the Kouvel-Fisher method, and modified Arrott plots. All samples follow a mean field behavior, with Tc ranging from 298 to 340K. The acquired values exhibit self-consistency, as indicated by the results from the Widom scaling relation. Furthermore, the magnetization isotherms exhibit a universal scaling behavior, providing additional credence to the calculated critical exponents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Pressure-Induced Superconductivity in the Wide-Band-Gap Semiconductor Cu 2 Br 2 Se 6 with a Robust Framework

We report pressure-induced superconductivity in a ternary and nonmagnetic Cu-containing semiconductor, Cu 2 Br 2 Se 6 , with a wide band gap of 1.89 eV, in which the Cu and Br atoms generate infinite 2, helical chains along the c-axis and are linked by the cyclohexane-like Se 6 rings to form a three-dimensional framework. We find that this framework is remarkably robust under compression, and the ambient-pressure phase survives at least to our experimental limit of 32.1 GPa. Concurrent semiconductor-to-metal transition and superconductivity are observed above 21.0 GPa. The superconducting temperature monotonically increases from 4.0 to 6.7 K at 40.0 GPa. Furthermore, first-principles calculations show that the emergence of superconductivity is associated with the formation of weak multicentered bonds that involve the increase in coordination of the Cu atoms and a subset of the Se atoms. The observation of superconductivity in this type of nonmagnetic transition-metal-based material will inspire the exploration of related new superconductors under pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗