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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Support of NASA ADR/ Cross-Enterprise NRA Advanced Adiabatic Demagnetization Refrigerators for Continuous Cooling from 10K to 50mK, Development of a Heat Switch

Mechanical heat switches are used in conjunction with sorption refrigerators, adiabatic demagnetization refrigerators and for other cryogenic tasks including the pre-cooling cryogenic systems. They use a mechanical actuator which closes Au plated Cu jaws on an Au plated Cu bar. The thermal conductance in the closed position is essentially independent of the area of the jaws and proportional to the force applied. It varies linearly with T. It is approximately 10mW/K for 200 N at 1.5K. In some applications, the heat switch can be driven from outside the cryostat by a rotating rod and a screw. Such heat switches are available commercially from several sources. In other applications, including systems for space, it is desirable to drive the switch using a cold linear motor, or solenoid. Superconducting windings are used at temperatures s 4.2K to minimize power dissipation, but are not appropriate for pre-cooling a system at higher temperatures. This project was intended to improve the design of solenoid activated mechanical heat switches and to provide such switches as required to support the development of Advanced Adiabatic Demagnetization Refrigerators for Continuous Cooling from 10 K to 50 mK at GSFC. By the time funding began in 5/1/01, the immediate need for mechanical heat switches at GSFC had subsided but, at the same time, the opportunity had arisen to improve the design of mechanical heat switching by incorporating a "latching solenoid". In this device, the solenoid current is required only for changing the state of the switch and not during the whole time that the switch is closed.

Richards, Paul L.↗
NASA NTRS1980

Parallel access alignment network with barrel switch implementation for d-ordered vector elements

An alignment network between N parallel data input ports and N parallel data outputs includes a first and a second barrel switch. The first barrel switch fed by the N parallel input ports shifts the N outputs thereof and in turn feeds the N-1 input data paths of the second barrel switch according to the relationship X=k.sup.y modulo N wherein x represents the output data path ordering of the first barrel switch, y represents the input data path ordering of the second barrel switch, and k equals a primitive root of the number N. The zero (0) ordered output data path of the first barrel switch is fed directly to the zero ordered output port. The N-1 output data paths of the second barrel switch are connected to the N output ports in the reverse ordering of the connections between the output data paths of the first barrel switch and the input data paths of the second barrel switch. The second switch is controlled by a value m, which in the preferred embodiment is produced at the output of a ROM addressed by the value d wherein d represents the incremental spacing or distance between data elements to be accessed from the N input ports, and m is generated therefrom according to the relationship d=k.sup.m modulo N.

Barnes, George H.↗
NASA NTRS2008

RF MEMS Switches with SiC Microbridges for Improved Reliability

Radio frequency (RF) microelectromechanical (MEMS) switches offer superior performance when compared to the traditional semiconductor devices such as PIN diodes or GaAs transistors. MEMS switches have a return loss (RL) better than -25 dB, negligible insertion loss (IL), isolation better than -30 dB, and near zero power consumption. However, RF MEMS switches have several drawbacks the most serious being long-term reliability. The ability for the switch to operate for millions or even billions of cycles is a major concern and must be addressed. MEMS switches are basically grouped in two categories, capacitive and metal-to-metal contact. The capacitive type switch consists of a movable metal bridge spanning a fixed electrode and separated by a narrow air gap and thin insulating material. The metal-to-metal contact type utilizes the same basic design but without the insulating material. After prolonged operation the metal bridges, in most of these switches, begin to sag and eventually fail to actuate. For the metal-to-metal type, the two metal layers may actually fuse together. Also if the switches are not packaged properly or protected from the environment moisture may build up and cause stiction between the top and bottom electrodes rendering them useless. Many MEMS switch designs have been developed and most illustrate fairly good RF characteristics. Nevertheless very few have demonstrated both great RF performance and ability to perform millions/billions of switching cycles. Of these, nearly all are of metal-to-metal type so as the frequency increases RF performance decreases.

Scardelletti, Maximilian C.↗
NASA NTRS2013

RF Reference Switch for Spaceflight Radiometer Calibration

The goal of this technology is to provide improved calibration and measurement sensitivity to the Soil Moisture Active Passive Mission (SMAP) radiometer. While RF switches have been used in the past to calibrate microwave radiometers, the switch used on SMAP employs several techniques uniquely tailored to the instrument requirements and passive remote-sensing in general to improve radiometer performance. Measurement error and sensitivity are improved by employing techniques to reduce thermal gradients within the device, reduce insertion loss during antenna observations, increase insertion loss temporal stability, and increase rejection of radar and RFI (radio-frequency interference) signals during calibration. The two legs of the single-pole double-throw reference switch employ three PIN diodes per leg in a parallel-shunt configuration to minimize insertion loss and increase stability while exceeding rejection requirements at 1,413 MHz. The high-speed packaged diodes are selected to minimize junction capacitance and resistance while ensuring the parallel devices have very similar I-V curves. Switch rejection is improved by adding high-impedance quarter-wave tapers before and after the diodes, along with replacing the ground via of one diode per leg with an open circuit stub. Errors due to thermal gradients in the switch are reduced by embedding the 50-ohm reference load within the switch, along with using a 0.25-in. (approximately equal to 0.6-cm) aluminum prebacked substrate. Previous spaceflight microwave radiometers did not embed the reference load and thermocouple directly within the calibration switch. In doing so, the SMAP switch reduces error caused by thermal gradients between the load and switch. Thermal issues are further reduced by moving the custom, highspeed regulated driver circuit to a physically separate PWB (printed wiring board). Regarding RF performance, previous spaceflight reference switches have not employed high-impedance tapers to improve rejection. The use of open-circuit stubs instead of a via to provide an improved RF short is unique to this design. The stubs are easily tunable to provide high rejection at specific frequencies while maintaining very low insertion loss in-band.

Knuble, Joseph↗
NASA NTRS2016

Vibration Control via Stiffness Switching of Magnetostrictive Transducers

This paper presents a computational study of structural vibration control that is realized by switching a magnetostrictive transducer between high and low stiffness states. Switching is accomplished by either changing the applied magnetic field with a voltage excitation or changing the shunt impedance on the transducer's coil (i.e., the magnetostrictive material's magnetic boundary condition). Switched-stiffness vibration control is simulated using a lumped mass supported by a damper and the magnetostrictive transducer (mount), which is represented by a nonlinear, electromechanical model. Free vibration of the mass is calculated while varying the mount's stiffness according to a reference switched-stiffness vibration control law. The results reveal that switching the magnetic field produces the desired change in stiffness, but also an undesired actuation force that can significantly degrade the vibration control. Hence, a modified switched-stiffness control law that accounts for the actuation force is proposed and implemented for voltage-controlled stiffness switching. The influence of the magnetomechanical bias condition is also discussed. Voltage-controlled stiffness switching is found to introduce damping equivalent to a viscous damping factor up to about 0.25; this is shown to primarily result from active vibration reduction caused by the actuation force. The merit of magnetostrictive switched-stiffness vibration control is then quantified by comparing the results of voltage- and shunt-controlled stiffness switching to the performance of optimal magnetostrictive shunt damping.

stiffness tuning↗
DOE OSTI2022

Current source inverter with bi-directional switches

A switching circuit includes a diode, a semiconductor switch, and a first bidirectional switch. The semiconductor switch is configured to conduct a first current from a second terminal to a third terminal of the semiconductor switch when a first on-state signal is sent to a first terminal of the semiconductor switch. An anode of the diode is connected to the second terminal of the semiconductor switch, and a cathode of the diode is connected to the third terminal of the semiconductor switch. The first bidirectional switch includes a first terminal, a second terminal connected to the anode of the diode, and a third terminal and is configured to conduct a second current from the second terminal to the third terminal or from the third terminal to the second terminal when a second on-state signal is sent to the first terminal of the first bidirectional switch.

Dai, Hang↗
DOE OSTI2018

Principles of Design for Substrate-Supported Molecular Switches Based on Physisorbed and Chemisorbed States

The physisorbed (precursor) and chemisorbed states of a molecule on metal surfaces can be utilized to build a logic switch at the single-molecule level, enabling further microminiaturization of electronic devices beyond the silicon limits. However, a serious drawback of this design is easy lateral diffusion of the molecule in the physisorbed state, which may destroy the normal switch operation. Here, we demonstrate that anchoring engineering can be an effective way to enhance the stability of molecular switches without degrading switching functionality. As exemplified by trans -ADT on Cu(111), we show that the lateral diffusion of such molecular switch can be obstructed by the anchoring of the ending thiophene groups, along with a rotation of the adsorbate during the switching process. More general, our results also suggest that when searching for molecular switches with reversible physisorbed and chemisorbed states with excellent bistability and lateral stability, the focus should be on finding molecules with a moderate HOMO–LUMO energy gap and anchoring atoms with positive charge that can then be deposited on substrates with which they interact moderately. Furthermore, this allows further improvement of the lateral and vertical stability of such a molecular switch by substituting the thiophene groups with selenophene, thus establishing trans -ADS on Cu(111) as a promising switch.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2004

Power Actuation and Switching Module Development

The Deep Space Avionics (DSA) Project is developing a Power Actuation and Switching Module (PASM). This component enables a modular and scalable design approach for power switching applications, which can result in a wide variety of power switching architectures using this simple building block. The PASM is designed to provide most of the necessary power switching functions of spacecraft for various Deep Space missions including future missions to Mars, comets, Jupiter and its moons. It is fabricated using an A SIC process that is tolerant of high radiation. The development includes two application specific integrated circuits (ASICs) and support circuitry all packaged using High Density Interconnect (HDI) technology. It can be operated in series or parallel with other PASMs, It can be used as a high-side or low-side switch and it can drive thruster valves, pyrotechnic devices such as NASA standard initiators, bus shunt resistors, and regular spacecraft component loads. Each PASM contains two independent switches with internal current limiting and over-current trip-off functions to protect the power subsystem from load faults. During turnon and turnoff each switch can limit the rate of current change (di/dt) to a value determined by the user. Threeway majority-voted On/Off commandability and full switch status telemetry (both analog and digital) are built into the module. This paper describes the development process used to design, model, fabricate, and test these compact and versatile power switches. Preliminary test results from prototype HDI PASM hardware are also discussed.

Power Actuation and Switching Module (PASM)↗
DOE OSTI2021

RKKY Exchange Bias Mediated Ultrafast All-Optical Switching of a Ferromagnet

The discovery of ultrafast helicity-independent all-optical switching (HI-AOS), as well as picosecond all-electrical switching of a ferrimagnet, has inspired the ultrafast spintronics community to explore ultrafast switching of a ferromagnet to achieve practical ultrafast storage and memory devices. Two explored mechanisms of HI-AOS of a ferromagnet in ferromagnet-ferrimagnet heterostructure are: a) exploiting the indirect exchange coupling with and b) injection of non-local spin current originated from a switching ferrimagnet. Here, in this manuscript, exchange mediated HI-AOS of a Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange coupled “[Co/Pt]-multilayers/Pt spacer/CoGd” heterostructure is demonstrated. The authors have measured layer-resolved static magnetic properties, single-shot HI-AOS, and magnetization dynamics of the ferromagnetic Co/Pt multilayers (MLs), that are ferromagnetically or antiferromagnetically coupled with ferrimagnetic CoGd layers. Time-resolved magnetization dynamics reveal a 3.5 ps switching time of the Co/Pt MLs, which is the fastest switching of a ferromagnet reported to date. Employing an extended microscopic three-temperature model, the temporal dynamics of the exchange coupled ferromagnet–ferrimagnet heterostructure are simulated, qualitatively and quantitatively explaining the experimental switching phenomena. This work experimentally as well as theoretically establishes the mechanism of exchange mediated all-optical switching of ferromagnet-ferrimagnet heterostructures, which can be integrated with a magnetic tunnel junction for efficient reading after ultrafast energy-efficient switching.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A molecular dynamics study of domain switching in BiFeO 3 nanofilm under DC electric field

The performance of ferroelectric materials is deeply rooted in the domain switching process triggered by an applied electric field. To understand the effect of controlling factors on the domain switching characteristics, nanoscale studies are essential. In this work, an atomistic-scale computational framework is developed to study the domain switching process of bismuth ferrite (BiFeO 3 ) nanofilms. Through a series of molecular dynamics simulations, the effects of duration and magnitude of an electric field, domain size and nanofilm thickness on the domain switching behavior are investigated. The evolution of domains under different magnitudes and durations of the applied electric field is studied, and the results of unswitched and switched cases are summarized in a switching map. Analysis of various nanofilms reveals that by increasing the film thickness, the switching time is increased. Additionally, the nanofilms with different domain sizes and configurations are examined, and the minimum domain size for complete reversal switching is obtained. Our results are helpful to predict and tune the switching process in ferroelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Necessary and sufficient conditions for quadratic stabilizability of switched systems on non-uniform time domains

In this paper, we consider the quadratic stabilizability via state feedback for a particular class of switched systems that evolve on a non-uniform time domain by introducing time scales theory. The system considered switches between a continuous-time subsystem with variable lengths and a discrete-time subsystem with variable discrete step sizes. Necessary and sufficient conditions are derived to guarantee the quadratic stability of this class of switched systems via a switching state feedback law based on the existence of a common positive definite matrix satisfying the quadratic stabilizability condition by considering that the two subsystems are unstable. By state feedback, we mean that the switching among subsystems depends on the system states. Current results for this kind of state switching feedback control are derived only for switched systems evolving on a continuous time domain or a discrete time domain with fixed step’s size. These results are not applicable for the particular class of switched systems where there is a mixing between the continuous and discrete dynamics. This motivates the derivation of a new and more general state feedback control law for switched systems in this work. Here, a numerical example illustrating the results is presented.

42 ENGINEERING↗
DOE OSTI2020

Hypothetical Efficiency of Electrical to Mechanical Energy Transfer during Individual Stochastic Molecular Switching Events

There are now many examples of single molecule rotors, motors and switches in the literature that, when driven by photons, electrons or chemical reactions, exhibit well defined motions. As a step towards using these single molecule devices to perform useful functions one must understand how they interact with their environment and quantify their ability to perform work on it. Using a single molecule rotary switch we examine the transfer of electrical energy, delivered via electron tunneling, to mechanical motion and measure the forces the switch experiences with a non-contact q-plus atomic force microscope. Action spectra reveal that the molecular switch has two stable states and can be excited resonantly between them at a bias of 100 mV via a one-electron inelastic tunneling process which corresponds to an energy input of 16 zepto Joules. Furthermore, while the electrically induced switching events are stochastic and no net work is to done on the cantilever, by measuring the forces between the molecular switch and the AFM cantilever we can derive the maximum hypothetical work the switch could perform during a single switching event which is ~55 meV, equal to 8.9 zepto Joules which translates to a hypothetical efficiency ~55% per individual inelastic tunneling electron induced switching event. When co considering the total electrical energy input this drops to 1x10 -7 % due to elastic tunneling events that dominate the tunneling current. However, this approach constitutes a general method for quantifying and comparing the energy input and output of molecularmechanical devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Polarization-controlled volatile ferroelectric and capacitive switching in Sn 2 P 2 S 6

Abstract Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic- like functional properties; in short, the electronic response must depend on the voltage history, thus enabling learning algorithms. Here we demonstrate volatile ferroelectric switching of Sn 2 P 2 S 6 at room temperature and see that initial polarization orientation strongly determines the properties of polarization switching. In particular, polarization switching hysteresis is strongly imprinted by the original polarization state, shifting the regions of non-linearity toward zero-bias. As a corollary, polarization switching also enables effective capacitive switching, approaching the sought-after regime of memcapacitance. Landau–Ginzburg–Devonshire simulations demonstrate that one mechanism by which polarization can control the shape of the hysteresis loop is the existence of charged domain walls (DWs) decorating the periphery of the repolarization nucleus. These walls oppose the growth of the switched domain and favor back-switching, thus creating a scenario of controlled volatile ferroelectric switching. Although the measurements were carried out with single crystals, prospectively volatile polarization switching can be tuned by tailoring sample thickness, DW mobility and electric fields, paving way to non-linear dielectric properties for smart electronic circuits.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2018

Intrinsic dynamics of the electric-field-induced phase switching in antiferroelectric PbZrO 3 ultrathin films

Antiferroelectric ultrathin PbZrO3 films can exhibit both ferroelectric and antiferroelectric behavior depending on the thickness. We use first-principles-based nanoscopic simulations to investigate the intrinsic high-frequency dynamics of the electric-field-induced phase switching in such films which so far remains unknown. Here in this comprehensive study we report (i) the size and frequency evolution of the polarization response to the electric field;(ii)the intrinsic time for the phase switching; (iii) detailed comparison between the polarization reversal in the films with ferroelectric and antiferroelectric behavior; (iv) dynamics of the antiferroelectric and antiferrodistortive order parameters; (v) nanoscopic mechanism responsible for the phase switching. The nanoscopic insight leads to the prediction of the existence of two possible scenarios for the antipolar-polar phase switching depending on the mutual orientation of the antiferroelectric order parameter and the electric field. The two scenarios have different dynamical fingerprints. The polar-antipolar phase switching is found to be assisted by the formation of a nonpolar phase. Computational data indicate that the phase switching time is only fractions of nanoseconds for the polar-polar phase switching in ferroelectric films and polar-antipolar phase switching in antiferroelectric films. The antipolar-polar phase switching in antiferroelectric films is just a bit slower and takes the order of nanosecond. Under nonequilibrium conditions we find formation of antiferroelectric and antiferrodistortive nanodomains and coexistence of polar and antipolar order parameters.

25 ENERGY STORAGE↗
DOE OSTI2023

Design and Optimization of a Fast-Switching Electromagnetic Valve Actuator for Off-highway Vehicle Hydraulic Systems

Electrification of off-highway vehicles offers improved efficiency and reduction in greenhouse gas emissions. However, the extremely low power densities of electric machines relative to the hydraulics used in conventional off-highway vehicles makes electrification challenging. Although the recently proposed Hybrid Hydraulic Electric Architecture (HHEA) can overcome this limitation, it requires frequent switching between the pressure rails using switching valves resulting in losses. Fast switching minimizes the switching losses in these valves, which otherwise significantly reduce the overall efficiency of the system. The primary contribution of this paper is the design and optimization of a linear electromagnetic actuator for a fast-switching valve. This paper identifies the actuator requirements to enable fast switching and presents a design and optimization technique to realize actuators that meet the design objectives. In addition, a multi-physics approach is proposed to model the performance of the complete switching valve by considering the electromagnetic, fluidic, and mechanical physics. An optimal actuator design is obtained using the developed optimization framework, and the multi-physics model demonstrates that the selected design achieves a 30% reduction in throttling-related switching losses by switching 70 % faster than comparable commercial valve designs.

Linear actuators, off-highway vehicle electrificat↗
DOE OSTI2021

Incorporating Valve Switching Losses Into a Static Optimal Control Algorithm for the Hybrid Hydraulic-Electric Architecture (HHEA)

The Hybrid Hydraulic-Electric Architecture (HHEA) has, in recent years, been proposed as an energy efficient alternative to conventional load-sensing architectures in mobile machines such as excavators and wheel-loaders. HHEA leverages the advantages of hydraulic power and electric power to eliminate throttling valves while also improving the energy and control performance of the system. The architecture utilizes a set of common pressure rails to provide a majority of power and and a small electric motor driven pump to modulate this power to meet the exact demand. Previous work has developed a computationally efficient Lagrange Multiplier approach for determining the optimal pressure rail selections that minimizes the energy losses in the system. The static model used considers only the energy use for each pressure rail selection but not the losses associated with the valves during the transition. This paper presents an approach to include the switching losses in the model and in the optimization procedure. To capture the switching losses, switching events between different rails and at various input and output flow rates were simulated with consideration of valve spool dynamics. A parameterized model that summarizes the losses is then obtained, allowing switching losses to be added to the previous energy analysis. The performance of the switching loss model was compared with reference data obtained from a high-fidelity simulation model. To incorporate the switching losses into optimal control algorithm, an efficient dynamic programming approach that prevents frequent switching is adopted in place of the Lagrange multiplier approach. The overall effect of switching losses on the energy consumption and optimal control decisions is presented. In general, switching losses contribute to about 9–10% of input energy.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1991

HOLLOTRON switch for megawatt lightweight space inverters

The feasibility of satisfying the switching requirements for a megawatt ultralight inverter system using HOLLOTRON switch technology was determined. The existing experimental switch hardware was modified to investigate a coaxial HOLLOTRON switch configuration and the results were compared with those obtained for a modified linear HOLLOTRON configuration. It was concluded that scaling the HOLLOTRON switch to the current and voltage specifications required for a megawatt converter system is indeed feasible using a modified linear configuration. The experimental HOLLOTRON switch operated at parameters comparable to the scaled coaxial HOLLOTRON. However, the linear HOLLOTRON data verified the capability for meeting all the design objectives simultaneously including current density (greater than 2 A/sq cm), voltage (5 kV), switching frequency (20 kHz), switching time (300 ns), and forward voltage drop (less than or equal to 20 V). Scaling relations were determined and a preliminary design was completed for an engineering model linear HOLLOTRON switch to meet the megawatt converter system specifications.

Poeschel, R. L.↗
NASA NTRS1991

COMSAT Laboratories' on-board baseband switch development

Work performed at COMSAT Laboratories to develop a prototype on-board baseband switch is summarized. The switch design is modular to accommodate different service types, and the architecture features a high-speed optical ring operating at 1 Gbit/s to route input (up-link) channels to output (down-link) channels. The switch is inherently a packet switch, but can process either circuit-switched or packet-switched traffic. If the traffic arrives at the satellite in a circuit-switched mode, the input processor packetizes it and passes it on to the switch. The main advantage of the packet approach lies in its simplified control structure. Details of the switch architecture and design, and the status of its implementation, are presented.

Pontano, B. A.↗