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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Fracture Dynamics in Silicon Anode Solid-State Batteries

Solid-state batteries (SSBs) with silicon anodes could enable improved safety and energy density compared to lithium-ion batteries. However, degradation arising from the massive volumetric changes of silicon anodes during cycling is not well understood in solid-state systems. Here, we use operando X-ray computed microtomography to reveal micro- to macro-scale chemo-mechanical degradation processes of silicon anodes in SSBs. Mud-type channel cracks driven by biaxial tensile stress form across the electrode during delithiation. We also find detrimental cracks at the silicon/ solid electrolyte interface that form due to local reaction competition between neighboring domains of different sizes. Continuum phase-field damage modeling quantifies stress-driven channel cracking and shows that the lithiated silicon stress state is critical for determining the extent of interfacial fracture. This work reveals the mechanisms that govern SSBs compared to conventional lithium-ion batteries and provides guidelines for engineering chemomechanically resilient electrodes for high-energy batteries.

25 ENERGY STORAGE↗
DOE OSTI2021

Calendar aging of silicon-containing batteries

High-energy batteries for automotive applications require cells to endure well over a decade of constant use, making their long-term stability paramount. This is particularly challenging for emerging cell chemistries containing silicon, for which extended testing information is scarce. While much of the research on silicon anodes has focused on mitigating the consequences of volume changes during cycling, comparatively little is known about the time-dependent degradation of silicon-containing batteries. Here we discuss a series of studies on the reactivity of silicon that, collectively, paint a picture of how the chemistry of silicon exacerbates the calendar aging of lithium-ion cells. Assessing and mitigating this shortcoming should be the focus of future research to fully realize the advantages of this battery technology.

25 ENERGY STORAGE↗
DOE OSTI2024

Characterization of pitch carbon coating properties affecting the electrochemical behavior of silicon nanoparticle lithium-ion battery anodes

Silicon is an exciting material for next-generation lithium-ion battery anodes, due to its high theoretical capacity and availability, but its widespread implementation has been limited by extensive volume changes during cycling that causes mechanical damage and limits cycle life. One approach to mitigating these deleterious effects while still maintaining silicon's benefits is the addition of a pitch carbon coating to nanometer-sized silicon particles. Here, in this study, we present characterization of pitch-coated silicon electrodes without annealing and annealed at 700 °C and 1000 °C to determine the optimum temperature treatment, as well as pitch-only and silicon-only electrodes with and without annealing to elucidate the impacts of each component on early electrochemical behavior. Using Fourier transform infrared and Raman spectroscopies, atomic force and scanning spreading resistance microscopy, and electrochemical analysis, we find 700 °C to be the optimal annealing temperature, as amorphous carbon is created, which improves conductivity prior to cycling and facilitates ion storage during cycling that increases capacity. We also present in situ Raman spectroscopy data demonstrating the heterogeneous aging that occurs across the electrode surface during cycling.

25 ENERGY STORAGE↗
DOE OSTI2024

Simultaneous measurement of temperature and strain by cascaded fiber Bragg grating-silicon Fabry-Perot interferometer sensor

We report a fiber-optic sensor configuration with a cascaded fiber Bragg grating (FBG) and a silicon Fabry-Perot interferometer (FPI) for simultaneous measurement of temperature and strain. The sensor is composed of a 5 mm FBG on a single mode fiber and a 100μm thick silicon FPI attached to the tip of the optical fiber. The FBG is surface mounted on the host structure, and the FPI tip is suspended. Due to the stress-free, cantilever configuration, the silicon FPI is insensitive to strain, but sensitive to temperature with a sensitivity much higher than the FBG due to the large thermo-optic coefficient of silicon. The sensor is tested from room temperature to 100°C with varying strain up to ∼150με. The silicon FPI provides high temperature sensitivity of 89 pm/°C unaffected by strain. Since the FBG is attached to the host structure, it is affected by both thermal and mechanical strain; the sensitivity of these was experimentally obtained 32 pm/°C and 1.09 pm / με, respectively. Interrogated with a broadband light source and a high-speed spectrometer, the sensor shows temperature and strain resolutions of 1.9 × 10 −3 °C and 0.042 με, respectively. Here, due to the small size, enhanced sensitivity, and high resolution, this cascaded FBG-FPI sensor can be used in applications where accurate measurement of temperature and strain is required.

42 ENGINEERING↗
DOE OSTI2020

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗
DOE OSTI2024

Silicone Resins for Vat Polymerization Printing

This paper reviews research of silicone-based resins for vat polymerization printing (VPP). Silicone resins are used commonly in other 3D printing technologies because of their desirable properties. Silicones are chemically inert, oxidatively, and thermally stable, and have the lowest glass transition temperature of any polymer. Creating silicone resins processable by VPP is challenging because VPP requires low viscosity liquid resin that quickly photopolymerizes. This review will summarize VPP technologies, resin chemistries, and recent research of silicone VPP resins.

36 MATERIALS SCIENCE↗
DOE OSTI2021

3D Printing of High Viscosity Reinforced Silicone Elastomers

Recent advances in additive manufacturing, specifically direct ink writing (DIW) and ink-jetting, have enabled the production of elastomeric silicone parts with deterministic control over the structure, shape, and mechanical properties. These new technologies offer rapid prototyping advantages and find applications in various fields, including biomedical devices, prosthetics, metamaterials, and soft robotics. Stereolithography (SLA) is a complementary approach with the ability to print with finer features and potentially higher throughput. However, all high-performance silicone elastomers are composites of polysiloxane networks reinforced with particulate filler, and consequently, silicone resins tend to have high viscosities (gel- or paste-like), which complicates or completely inhibits the layer-by-layer recoating process central to most SLA technologies. Herein, the design and build of a digital light projection SLA printer suitable for handling high-viscosity resins is demonstrated. Further, a series of UV-curable silicone resins with thiol-ene crosslinking and reinforced by a combination of fumed silica and MQ resins are also described. The resulting silicone elastomers are shown to have tunable mechanical properties, with 100–350% elongation and ultimate tensile strength from 1 to 2.5 MPa. Three-dimensional printed features of 0.4 mm were achieved, and complexity is demonstrated by octet-truss lattices that display negative stiffness.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Comparison of Silicon Decarbonization Methods to Reduce Process Emissions and Energy Consumption

The demand for silicon is rising due to its use in solar cells, electronics, and alloying as part of the green transition. However, these products require silicon metal (metallurgical grade silicon, >98% Si) as their main raw material before undergoing further chemical refining, usually via gas phase in methods such as the Siemens process. Silicon metal is currently produced in a submerged arc furnace via carbothermic reduction of quartz, which results in 10-12 tCO2/tSi. More than 40% of these emissions are process emissions, meaning they do not include contributions from electricity generation or transport. This talk will discuss promising methods to reduce or eliminate these process emissions. These include the use of biocarbon and carbon capture, aluminothermic reduction, electrochemical reduction with molten salts, and use of hydrogen in a modified Siemens process. Biocarbon and carbon capture is a straightforward method to reduce the net carbon emissions of the process, but long-term sustainable production of high-quality charcoal is a challenge. Aluminothermic reduction makes good use of aluminum byproducts such as dross but is perhaps limited in its applications to aluminum-silicon alloy products. Electrochemical reduction is promising as a method of producing high purity Si from quartz, without further need for the Siemens process, but is still in early stages of research and slow processing times are a concern. Finally, the use of hydrogen in a modified Siemens process would also result in a high purity Si product from quartz, however the process has considerable logistical challenges with corrosive and unstable gases at high temperatures. This talk will further expand on the potential merits and challenges of each method, while comparing their potential to reduce emissions and/or energy consumption while meeting global demand.

decarbonization↗
DOE OSTI2024

Innovative recycling of high purity silver from silicon solar cells by acid leaching and ultrasonication

Precious and scarce silver (Ag) is used as a front electrical contact in silicon solar panels. With massive amounts of solar panel waste coming to end-of-life, it is imperative to recover all the Ag from these modules. In this paper, we propose a novel method to easily reclaim Ag from end-of-life silicon solar cells using low concentration sulfuric acid (H 2 SO 4 ) leaching followed by ultrasonication. Our process simplifies the Ag recycling procedure by directly recovering the Ag contacts from solar cells, eliminating the need for secondary precipitation/electrodeposition. First, scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) was used to study the leaching and ultrasonication process on rejected solar wafers. Next, a solar panel from landfill was heated in a furnace to burn off the polymer encapsulant. The silicon wafers were then collected from the burning process and leached in 2 M H 2 SO 4 at two different shaking speeds for 48 hours at room temperature. Finally, the end-of-life silicon wafer pieces were collected, sonicated in water, and then the sonication water was centrifuged to show a proof-of-concept to recover the Ag contacts. Inductively coupled plasma optical emission spectroscopy (ICPOES) is used to monitor dissolved elements in the leachate as a function of time and shaking speed. XPS is used to evaluate the composition of the silicon cell wafer surface before and after H 2 SO 4 leaching. SEM is used to image the recovered Ag contacts morphology and EDX confirms the recovered particles contain high amounts of Ag. Furthermore, a proposed schematic illustrates the authors’ hypothesis for the peeling mechanism.

14 SOLAR ENERGY↗
DOE OSTI2024

Surface and Bulk Stabilization of Silicon Anodes with Mixed-Multivalent Additives: Ca(TFSI) 2 and Mg(TFSI) 2

Here, silicon is drawing attention as the upcoming anode material for the next generation of lithium-ion batteries due to its higher capacity compared to commercial graphite. However, silicon anions formed during lithiation are highly reactive with binder and electrolyte components creating an unstable SEI layer and limiting the calendar life of silicon anodes. The reactivity of lithium silicide and the formation of an unstable SEI layer is mitigated by utilizing the use of a mixture of Ca and Mg multivalent cations as an electrolyte additive for Si anodes to improve their calendar life. The effect of mixed salts on the bulk and surface of silicon anodes was studied by multiple structural characterization techniques. Ca and Mg ions in the electrolyte formed relatively thermodynamically stable quaternary Li-Ca-Mg-Si Zintl phases in an in-situ fashion and more stable and denser SEI layer on the Si particles. These in turn protect silicon particles against side reactions with electrolytes in a coin cell. The full cell with the mixed cation electrolyte demonstrates enhanced calendar life performance with lower measured current and current leakage than that of the baseline electrolyte due to reduced side reactions. Electron Microscopy, HRXRD, and solid-state NMR results showed that electrodes with mixed cations tended to have less cracking on the electrode surface compared to Si electrodes with Gen2 + FEC and the presence of mixed cations enhances cation migration and formation of quaternary Zintl phases stabilizing bulk and forming a more stable SEI.

25 ENERGY STORAGE↗
DOE OSTI2020

Hierarchical porous silicon structures with extraordinary mechanical strength as high-performance lithium-ion battery anodes

Abstract Porous structured silicon has been regarded as a promising candidate to overcome pulverization of silicon-based anodes. However, poor mechanical strength of these porous particles has limited their volumetric energy density towards practical applications. Here we design and synthesize hierarchical carbon-nanotube@silicon@carbon microspheres with both high porosity and extraordinary mechanical strength (>200 MPa) and a low apparent particle expansion of ~40% upon full lithiation. The composite electrodes of carbon-nanotube@silicon@carbon-graphite with a practical loading (3 mAh cm −2 ) deliver ~750 mAh g −1 specific capacity, <20% initial swelling at 100% state-of-charge, and ~92% capacity retention over 500 cycles. Calendered electrodes achieve ~980 mAh cm −3 volumetric capacity density and <50% end-of-life swell after 120 cycles. Full cells with LiNi 1/3 Mn 1/3 Co 1/3 O 2 cathodes demonstrate >92% capacity retention over 500 cycles. This work is a leap in silicon anode development and provides insights into the design of electrode materials for other batteries.

25 ENERGY STORAGE↗
DOE OSTI2022

Transition metal impurities in silicon: computational search for a semiconductor qubit

Abstract Semiconductors offer a promising platform for physical implementation of qubits, but their broad adoption is presently hindered by limited scalability and/or very low operating temperatures. Learning from the nitrogen-vacancy centers in diamond, our goal is to find equivalent optically active point defect centers in crystalline silicon, which could be advantageous for their scalability and integration with classical devices. Transition metal (TM) impurities in silicon are common paramagnetic deep defects, but a comprehensive theoretical study of the whole 3 d series that considers generalized Koopmans’ condition is missing. We apply the HSE06(+U) method to examine their potential as optically active spin qubits and identify seven TM impurities that have optically allowed triplet–triplet transitions within the silicon band gap. These results provide the first step toward silicon-based qubits with higher operating temperatures for quantum sensing. Additionally, these point defects could lead to spin-photon interfaces in silicon-based qubits and devices for mid-infrared free-space communications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Entanglement of a nuclear spin qubit register in silicon photonics

Colour centres provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T centre in silicon is an emerging spin–photon interface that combines telecom O-band optical transitions and an electron spin in a scalable photonics platform. Here, in this study, we integrate T centres into single-mode photonic waveguides in a silicon-on-insulator platform. We demonstrate the initialization, coherent control and state read-out of a three-qubit register based on the electron spin of a T centre coupled to a hydrogen and a silicon nuclear spin. The spin register exhibits spin echo coherence times of 0.41(2) ms for the electron spin, 112(12) ms for the hydrogen nuclear spin and 67(7) ms for the silicon nuclear spin. We use nuclear–nuclear two-qubit gates to generate entanglement between the two nuclear spins with a fidelity of F = 0.77(3) and a coherence time of ${T}_{2}^{* }=2.60(8)$ ms. Our results show that a T centre in silicon photonics can realize a multi-qubit register with an optical interface for quantum communication.

Song, Hanbin [Lawrence Berkeley National Laborator↗
DOE OSTI2022

Advanced antireflection for back-illuminated silicon photomultipliers to detect faint light

Silicon photomultipliers have attracted increasing attention for detecting low-density light in both scientific research and practical applications in recent years; yet the photon losses due to reflection on the light-sensitive planar silicon surface considerably limit its photon detection efficiency. Here we demonstrate an advanced light trapping feature by developing the multi-layer antireflection coatings and the textured silicon surface with upright random nano-micro pyramids, which significantly reduces the reflection of faint light in a wide spectrum, from ultraviolet to infrared. Integrating this advanced photon confinement feature into next-generation back-illuminated silicon photomultiplier would increase the photon detection efficiency with significantly lower reflection and much more active areas. This advanced design feature offers the back-illuminated silicon photomultiplier broader application opportunities exemplified in the emerging scenarios such as nuclear medical imaging, light detection and ranging for autonomous driving, detection of scintillation light in ionizing radiation, as well as high energy physics.

42 ENGINEERING↗
DOE OSTI2021

Structure and dynamics of small polyimide oligomers with silicon as a function of aging

The effect of UV curing and shearing on the structure and behavior of a polyimide (PI) binder as it disperses silicon particles in a battery electrode slurry was investigated. PI dispersant effectiveness increases with UV curing time, which controls the overall binder molecular weight. Here, the shear force during electrode casting causes higher molecular weight PI to agglomerate, resulting in battery anodes with poorly dispersed Si particles that do not cycle well. It is hypothesized that when PI binder is added above a critical amount, it conformally coats the silicon particles and greatly impedes Li ion transport. There is an “interzonal region” for binder loading where it disperses silicon well and provides a coverage that facilitates Li transport through the anode material and into the silicon particles. These results have implications in ensuring reproducible electrode manufacturing and increasing cell performance by optimizing the PI structure and coordination with the silicon precursor.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Fiber-optic silicon Fabry–Perot interferometric bolometer with improved detection limit for magnetic confinement fusion

Fiber-optic bolometers (FOBs) intended for plasma radiation measurement in magnetically confined fusion have been previously developed using a silicon pillar that functions as both a Fabry–Perot interferometer (FPI) for temperature measurement and an absorber for the radiation. We report an FOB design that can significantly improve the detection sensitivity over earlier designs by engineering the absorber of the FOB. Our design uses the fact that, compared with a silicon pillar, a gold film with the same x-ray absorption thickness will show a much higher temperature rise from a given power density of the radiation. Therefore, the responsivity of an FOB can be improved by attaching a large gold disk to the silicon FPI as the absorber. We have developed a fabrication method for FOBs of such design and obtained an FOB with a 4-µm-thick, 0.6-mm-diameter gold disk attached to a 200-µm-diameter, 100-µm-thick silicon FPI. We have characterized the noise, responsivity, response time, and noise-equivalent power density (NEPD) and compared these with the earlier design where the absorber is mainly the silicon FPI itself. The experimental result suggests that the FOB with the gold disk achieves a responsivity of ∼2.8 mK/(W/m2) and a noise-equivalent-power-density of 0.13 W/m2, which are, respectively, more than nine times larger and six times smaller compared to the FOB using a previous design. Improved NEPD and good absorption over a broad frequency range will make the FOB more attractive for applications in magnetic-confinement fusion devices.

Uddin, Nezam↗
DOE OSTI2023

Aluminum scandium nitride films for piezoelectric transduction into silicon at gigahertz frequencies

Recent advances in the growth of aluminum scandium nitride films on silicon suggest that this material platform could be applied for quantum electromechanical applications. Here, we model, fabricate, and characterize microwave frequency silicon phononic delay lines with transducers formed in an adjacent aluminum scandium nitride layer to evaluate aluminum scandium nitride films, at 32% scandium, on silicon interdigital transducers for piezoelectric transduction into suspended silicon membranes. We achieve an electromechanical coupling coefficient of 2.7% for the extensional symmetric-like Lamb mode supported in the suspended material stack and show how this coupling coefficient could be increased to at least 8.5%, which would further boost transduction efficiency and reduce the device footprint. The one-sided transduction efficiency, which quantifies the efficiency at which the source of microwave photons is converted to microwave phonons in the silicon membrane, is 10% at 5 GHz at room temperature and, as we discuss, there is a path to increase this toward near-unity efficiency based on a combination of modified device design and operation at cryogenic temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of the Cherenkov Photon Background for Low-noise Silicon Detectors in Space

Future space observatories that seek to perform imaging and spectroscopy of faint astronomical sources will require ultra-low-noise detectors that are sensitive over a broad wavelength range. Silicon charge-coupled devices (CCDs), such as EMCCDs, skipper CCDs, multi-amplifier sensing CCDs, and single-electron sensitive read out CCDs have demonstrated the ability to detect and measure single photons from X-ray energies to near the silicon band gap (∼1.1 μm), making them candidate technologies for this application. Here, in this context, we study a relatively unexplored source of low-energy background coming from Cherenkov radiation produced by energetic cosmic rays traversing a silicon detector. We present a model for Cherenkov photon production and absorption that is calibrated to laboratory data, and we use this model to characterize the residual background rate for ultra-low-noise silicon detectors in space. We study how the Cherenkov background rate depends on detector thickness, variations in solar activity, and the contribution of heavy cosmic ray species (Z > 2). We find that for thick silicon detectors, such as those required to achieve high quantum efficiency at long wavelengths, the rate of cosmic-ray-induced Cherenkov photon production is comparable to other detector and astrophysical backgrounds. We apply our Cherenkov background model to simulated spectroscopic observations of extra-solar planets, and we find that thick detectors continue to outperform their thinner counterparts at longer wavelengths despite a larger Cherenkov background rate. Furthermore, we find that minimal masking of cosmic-ray tracks continues to maximize the signal-to-noise ratio of very faint sources despite the existence of extended halos of Cherenkov photons.

Astronomical detectors↗