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A description is given of the reconfigured Photovoltaic Array Space Power (PASP) Plus experiment: its objectives, solar-array complement, and diagnostic sensors. Results from a successful spaceflight will lead to a better understanding of high-voltage and radiation-damage limitations in the operation of new-technology solar arrays.
New advances in VUV thin film filter technology have been made using filter designs with multilayers of materials such as Al2O3, BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2. Our immediate application for these filters will be in an imaging system to be flown on a satellite where a 2 X 9 R(sub E) orbit will expose the instrument to approximately 275 krads of radiation. In view of the fact that no previous studies have been made on potential radiation damage of these materials in the thin film format, we report on such an assessment here. Transmittances and reflectances of BaF2, CaF2, HfO2, LaF3, MgF2, and SiO2 thin films on MgF2 substrates, Al2O3 thin films on fused silica substrates, uncoated fused silica and MgF2, and four multilayer filters made from these materials were measured from 120 nm to 180 nm before and after irradiation by 250 krads from a Co-60 gamma radiation source. No radiation-induced losses in transmittance or reflectance occurred in this wavelength range. Additional postradiation measurements from 160 nm to 300 nm indicated a 3 - 5% radiation-induced absorption near 260 nm in some of the samples with MgF2 substrates. From these measurements it is concluded that far ultraviolet filters made from the materials tested should experience less that 5% change from exposure to up to 250 krads of high energy radiation in space applications.
Bulk samples of Te-doped n-type GaAs were irradiated using 10 MeV to 24 MeV protons to fluences between 2 x 10 to the 11th power protons/sq cm and 2 x 10 to the 14th power protons/sq cm. Majority carrier electrical effects were measured using the vanderPauw techniques and it was observed that radiation damage was minimal at the 10 to the 11th power proton/sq cm fluence. For the higher fluences, carrier removal was proportional to Delta E/Delta x for the protons indicating ionization interactions between the protons and atoms. Thermal annealing was observed at 155 C.
The NNL.Fe.qSNAP-ZBL.2024.1 machine-learned potential (MLP) has been generated to support the development of an elemental body-centered cubic (BCC) Fe athermal recombination corrected neutron damage model and simulations of primary recoil atom (PRA) cascades in BCC Fe. This MLP is a quadratic spectral neighbor analysis potential (qSNAP) hybridized with the universal Ziegler-Beirsack-Littmark (ZBL) potential at short-range and is named according to Naval Nuclear Laboratory MLP naming conventions (NNL.material-system.MLP-type.year.version). Training set calculations for Fe are presented along with the subsequent MLP fitting procedure. A key criterion of the fitting procedure is that ZBL describes the short-range interaction with minimal impact on the MLP. The MLP is compared to density functional theory (DFT) predicted properties relevant to radiation damage simulation, including threshold displacement energies, for validation. The NNL.Fe.qSNAP-ZBL.2024.1 potential is considered suitable for molecular dynamics (MD) simulations of radiation defects up to 800 K and PRA cascades in BCC Fe up to around 10 keV. The potential can additionally be used on a limited basis for recoils of 10–20 keV, within which range the emergence of structures outside the training set in cascade simulations may cause system instabilities.
This three day conference, sixth in a series that began in 1974, was held at the NASA Lewis Research Center on October 18-20, 1983. The conference provided a forum for the discussion of space photovoltaic systems, their research status, and program goals. Papers were presented and workshops were held in a variety of technology areas, including basic cell research, advanced blanket technology, and radiation damage.
Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10 to the 14th, 10 to the 15th, and 10 to the 16th electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AM0 illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.
Understanding how irradiation-induced defects evolve at elevated temperatures is of critical importance to predicting materials' behavior under steady-state and accident scenarios. However, such mechanistic insight into microstructural evolution is limited by the nature of ex situ annealing and subsequent imaging. Here we show direct observation and quantification of defect recovery in neutron-irradiated Ti using in situ transmission electron microscopy (TEM) annealing experiments. In agreement with our prior work, and at temperatures below the irradiation temperature (T irr = 300 °C), dislocation loops are observed to glide. At elevated temperatures (>500 °C), dislocation lines become mobile and promote significant recovery of the microstructure. These mechanisms challenge the established electron irradiation-based model for radiation damage recovery, which originally suggests dissolution of static defect clusters, and demonstrates the importance of in situ characterization in understanding defect evolution in irradiated materials.
WFIRST-AFTA is a 2.4m class NASA observatory designed to address a wide range of science objectives using two complementary scientific payloads. The Wide Field Instrument (WFI) offers Hubble quality imaging over a 0.28 square degree field of view, and will gather NIR statistical data on exoplanets through gravitational microlensing. The second instrument is a high contrast coronagraph that will carry out the direct imaging and spectroscopic analysis of exoplanets, providing a means to probe the structure and composition of planetary systems. The coronagraph instrument is expected to operate in low photon flux for long integration times, meaning all noise sources must be kept to a minimum. In order to satisfy the low noise requirements, the Electron Multiplication (EM)-CCD has been baselined for both the imaging and spectrograph cameras. The EMCCD was selected in comparison with other candidates because of its low effective electronic read noise at sub-electron values with appropriate multiplication gain setting. The presence of other noise sources, however, such as thermal dark signal and Clock Induced Charge (CIC), need to be characterised and mitigated. In addition, operation within a space environment will subject the device to radiation damage that will degrade the Charge Transfer Efficiency (CTE) of the device throughout the mission lifetime. Here we present our latest results from pre- and post-irradiation testing of the e2v CCD201-20 BI EMCCD sensor, baselined for the WFIRST-AFTA coronagraph instrument. A description of the detector technology is presented, alongside considerations for operation within a space environment. The results from a room temperature irradiation are discussed in context with the nominal operating requirements of AFTA-C and future work which entails a cryogenic irradiation of the CCD201-20 is presented.
Damage to solar cell radiation shields in relay i and relay ii satellites
Quantative relationships between radiation dosage to transistors and resultant damage are established. Calculation of these dose levels is based on high energy particle population data and analysis of the shielding effect provided by the enclosures surrounding a given transistor.
Radiation effects on lithium-doped silicon solar cells from diffusion length degradation studies
The availability of data regarding the radiation behavior of GaAs and silicon solar cells is discussed as well as efforts to provide sufficient information. Other materials are considered too immature for reasonable radiation evaluation. The lack of concern over the possible catastrophic radiation degradation in cascade cells is a potentially serious problem. Lithium counterdoping shows potential for removing damage in irradiated P-type material, although initial efficiencies are not comparable to current state of the art. The possibility of refining the lithium doping method to maintain high initial efficiencies and combining it with radiation tolerant structures such as thin BSF cells or vertical junction cells could provide a substantial improvement in EOL efficiencies. Laser annealing of junctions, either those formed ion implantation or diffusion, may not only improve initial cell performance but might also reduce the radiation degradation rate.
Decreased current in solar cells on Relay I and Relay II due to damage by Van Allen belt radiation
The effect was studied of lunar surface material from the Sea of Fertility on the radiation reaction (damage) in mice caused by exposure to ionizing radiation. The material was administered to the organism in three ways -- aerogenically, through the esophagus, or peritoneally. It was shown that administering the lunar surface material did not appreciably affect the death of the animals and the reaction of the peripheral blood caused by the action of radiation. In mice which prior to irradiation had been administered inhalationally or peritoneally the lunar surface material, a lag in the increment of bodyweight was observed.
A Tektronix CCD was subjected to a proton beam. Comparisons were made of the CCD characteristics before, during, and after radiation. Gain and readout noise were not affected and charge transfer efficiency, full well, and dark current were. Permanent CTE damage resulted immediately upon radiation, but full well damage developed two days after radiation, while the dark current showed signs of recovery before permanent damage occurred. Histogram analysis showed that the most spiky-type behavior resulted from damage to defects existing in the CCD before radiation.
The status of radiation defects in silicon is briefly reviewed and discussed in relation to the problem of radiation tolerance of silicon solar cells in space.
Report describes measurements of effects of ionizing-radiation dose rate on consequent damage to complementary metal oxide/semiconductor (CMOS) electronic devices. Depending on irradiation time and degree of annealing, survivability of devices in outer space, or after explosion of nuclear weapons, enhanced. Annealing involving recovery beyond pre-irradiation conditions (rebound) detrimental. Damage more severe at lower dose rates.
A thorough analysis has been made of electron- and proton- damaged GaAs solar cells suitable for use in space. It is found that, although some electrical parametric data and spectral response data are quite similar, the type of damage due to the two types of radiation is different. An I-V analysis model shows that electrons damage the bulk of the cell and its currents relatively more, while protons damage the junction of the cell and its voltages more. It is suggested that multiple defects due to protons in a strong field region such as a p/n junction cause the greater degradation in cell voltage, whereas the individual point defects in the quasi-neutral minority-carrier-diffusion regions due to electrons cause the greater degradation in cell current and spectral response.