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At least 145 records · Page 8

Measurement of a high electrical quality factor in a niobium resonator for a gravitational radiation detector

The mechanical and electrical quality factors of a 10-g niobium resonator were measured at 4.4 K and were found to be 8.1 x 10 to the 6th, and 3.8 x 10 to the 6th, respectively. The value for the electrical quality factor is high enough for a system operating at 50 mK at a sensitivity level of one phonon. The resonator's low damping properties make it suitable for use as a transducer for a cryogenic three-mode gravitational radiation detector. A practical design is given for the mounting of the resonator on a 2400-kg aluminum-bar detector. Projections are made for the sensitivity of a 2400-kg bar instrumented as a three-mode system with this resonator inductively coupled to a SQUID.

Folkner, W. M.↗

Charge-carrier mobilities in Cd(0.8)Zn(0.2)Te single crystals used as nuclear radiation detectors

Charge-carrier mobilities were measured for the first time in Cd(0.8)Zn(0.2)Te single crystals using time-of-flight measurements of charge carriers produced by short (10 ns) light pulses from a frequency-doubled Nd:YAG laser (532 nm). The electron mobility displayed a T exp -1.1 dependence on the absolute temperature T in the range 200-320 K, with a room-temperature mobility of 1350 sq cm/V s. The hole mobility displayed a T exp -2.0 dependence in the same temperature range, with a room-temperature mobility of 120 sq cm/V s. Cd(0.8)Zn(0.2)Te appears to be a very favorable material for a room-temperature electronic nuclear radiation detector.

Burshtein, Z.↗

Diamond-based radiation detectors for very high dose rate environments- 16207

Diamond detectors offer a novel technology allowing the non-destructive assay of highly radioactive environments in the civil nuclear sector. Four detectors of different manufacturing origins have been characterised using dark current measurements and dose rate response in controlled environments. Results show the electrode material and contacts to the electrode are critical in achieving a reliable and stable detection device. This work demonstrates that diamond detectors offer considerable promise for civil nuclear applications, where high dose rate measurements are required. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Micro-Fabricated Solid-State Radiation Detectors for Active Personal Dosimetry

Active radiation dosimetry is important to human health and equipment functionality for space applications outside the protective environment of a space station or vehicle. This is especially true for long duration missions to the moon, where the lack of a magnetic field offers no protection from space radiation to those on extravehicular activities. In order to improve functionality, durability and reliability of radiation dosimeters for future NASA lunar missions, single crystal silicon carbide devices and scintillating fiber detectors are currently being investigated for applications in advanced extravehicular systems. For many years, NASA Glenn Research Center has led significant efforts in silicon carbide semiconductor technology research and instrumentation research for sensor applications under extreme conditions. This report summarizes the technical progress and accomplishments toward characterization of radiation-sensing components for the recommendation of their fitness for advanced dosimetry development.

Wrbanek, John D.↗

Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

Su, Ching-Hua↗

On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures

Owing to the radiation-induced pronounced conductivity compensation in silicon carbide, carrier localization (trapping) prevails over recombination in capture of nonequilibrium carriers. This makes it possible, by raising the temperature, to reduce the time of carrier retention by a trapping center to values shorter than the duration of signal shaping by electronic circuits. For structural defects created by 6.5-MeV protons, the temperature excluding degradation of the detector signal via carrier localization is estimated. The values of the appearing generation current the noise of which can restrict the operation of a detector in the spectrometric mode are determined.

36 MATERIALS SCIENCE↗

SU-F-BRE-01: A Rapid Method to Determine An Upper Limit On a Radiation Detector's Correction Factor During the QA of IMRT Plans

Purpose: Discrepancies in the verification of the absorbed dose to water from an IMRT plan using a radiation dosimeter can be wither caused by 1) detector specific nonstandard field correction factors as described by the formalism of Alfonso et al. 2) inaccurate delivery of the DQA plan. The aim of this work is to develop a simple/fast method to determine an upper limit on the contribution of composite field correction factors to these discrepancies. Methods: Indices that characterize the non-flatness of the symmetrised collapsed delivery (VSC) of IMRT fields over detector-specific regions of interest were shown to be correlated with IMRT field correction factors. The indices introduced are the uniformity index (UI) and the mean fluctuation index (MF). Each one of these correlation plots have 10 000 fields generated with a stochastic model. A total of eight radiation detectors were investigated in the radial orientation. An upper bound on the correction factors was evaluated by fitting values of high correction factors for a given index value. Results: These fitted curves can be used to compare the performance of radiation dosimeters in composite IMRT fields. Highly water-equivalent dosimeters like the scintillating detector (Exradin W1) and a generic alanine detector have been found to have corrections under 1% over a broad range of field modulations (0 – 0.12 for MF and 0 – 0.5 for UI). Other detectors have been shown to have corrections of a few percent over this range. Finally, a full Monte Carlo simulations of 18 clinical and nonclinical IMRT field showed good agreement with the fitted curve for the A12 ionization chamber. Conclusion: This work proposes a rapid method to evaluate an upper bound on the contribution of correction factors to discrepancies found in the verification of DQA plans.

07 ISOTOPE AND RADIATION SOURCES↗

Radiation detector using a graphene amplifier layer

A radiation field is detected or imaged using one or more junction devices in which a two-dimensional conductor layer is capacitively coupled to a semiconductor absorber layer. In the junction devices, pixel-level amplification and read-out are accomplished through the photogating of the devices by absorption within the absorber layer while it is in a state of deep depletion. When the two-dimensional conductor is graphene, we refer to a device operating in that manner as a deeply depleted graphene-oxide-semiconductor (D 2 GOS) detector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

A self-powered thin-film radiation detector using intrinsic high-energy current

Purpose: The authors introduce a radiation detection method that relies on high-energy current (HEC) formed by secondary charged particles in the detector material, which induces conduction current in an external readout circuit. Direct energy conversion of the incident radiation powers the signal formation without the need for external bias voltage or amplification. The detector the authors consider is a thin-film multilayer device, composed of alternating disparate electrically conductive and insulating layers. The optimal design of HEC detectors consists of microscopic or nanoscopic structures. Methods: Theoretical and computational developments are presented to illustrate the salient properties of the HEC detector and to demonstrate its feasibility. In this work, the authors examine single-sandwiched and periodic layers of Cu and Al, and Au and Al, ranging in thickness from 100 nm to 300 μm and separated by similarly sized dielectric gaps, exposed to 120 kVp x-ray beam (half-value thickness of 4.1 mm of Al). The energy deposition characteristics and the high-energy current were determined using radiation transport computations. Results: The authors found that in a dual-layer configuration, the signal is in the measurable range. For a defined total detector thickness in a multilayer structure, the signal sharply increases with decreasing thickness of the high-Z conductive layers. This paper focuses on the computational results while a companion paper reports the experimental findings. Conclusions: Significant advantages of the device are that it does not require external power supply and amplification to create a measurable signal; it can be made in any size and geometry, including very thin (sub-millimeter to submicron) flexible curvilinear forms, and it is inexpensive. Potential applications include medical dosimetry (both in vivo and external), radiation protection, and other settings where one or more of the above qualities are desired.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Exploring Graphene Field Effect Transistor Devices to Improve Spectral Resolution of Semiconductor Radiation Detectors

Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

36 MATERIALS SCIENCE↗

Efficient Broadband Terahertz Radiation Detectors Based on Bolometers with a Thin Metal Absorber

The matrix method has been used to calculate the coefficients of absorption of terahertz radiation in conventional (with radiation incident from vacuum adjacent to the bolometer) and inverted (with radiation incident from the substrate on which the bolometer was fabricated) bolometric structures. Near-unity absorption coefficients were obtained when an additional cavity in the form of a gap between the bolometer and the input or output window was introduced. Conventional bolometers then became narrowband, while inverted-type devices remained broadband.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Digital configurable instrument for emulation of signals from radiation detectors

The paper presents a digital instrument characterized by a specially designed architecture that is able to emulate in real time signals from a generic radiation detection system. The instrument is not a pulse generator of recorded shapes but a synthesizer of random pulses compliant to programmable statistics for height and starting time of events. Completely programmable procedures for emulation of noise, disturbances, and reference level variation are implemented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

A low temperature gravitational radiation detector

The beginning design of an experiment is discussed for studying gravitational radiation by using massive detectors which are cooled to ultralow temperatures in order to improve the signal to noise ratios and the effective range and stability of the detectors. The gravitational detector, a low detection system, a cooled detector, magnetic support, superconducting shielding, and superconducting accelerometer detector are described.

Hamilton, W. O.↗

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μ m thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Schottky barrier detectors (SBDs) require larger surface areas than conventional electronics to increase the detection efficiency although such SBDs manifest large diode ideality factors due to inhomogeneous areal distribution of surface barrier height (SBH). Inhomogeneous SBH distributions lead to various current flow mechanisms in SBDs, which need to be identified to optimize detector performance. In this Letter, we identify the current flow mechanism in large area Schottky barrier diodes for radiation detection fabricated on 150 μm thick n-4H–SiC epitaxial layers. The analysis of temperature-dependent forward current–voltage (I–V–T) characteristics of SBDs revealed two linear regions in current–voltage curves up to 450 K, one corresponding to the current flow through a low barrier patch, while the other corresponds to that of average barrier distribution. Applying a SBH distribution model to the reverse I–V–T characteristics, an activation energy of 0.76 eV for the current flow over the Schottky barrier was calculated. Additionally, the activation energy did not directly correspond to any of the defect levels observed from the deep level transient spectroscopy (DLTS). Above 450 K, a Schottky type barrier lowering suggested a current flow through a low barrier patch of ≈ 0.8 eV. The absence of any SBH lowering below 450 K indicated that the current corresponded to a neutrally charged trap level at ≈ 0.6 eV below the conduction band edge, which was consistent with DLTS measurements revealing the presence of an electron trap level Z1/2 at 0.59 eV below the conduction band edge.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗