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At least 145 records · Page 8

A light-induced phononic symmetry switch and giant dissipationless topological photocurrent in ZrTe 5

Dissipationless currents from topologically protected states are promising for disorder-tolerant electronics and quantum computation. In this work, we photogenerate giant anisotropic terahertz nonlinear currents with vanishing scattering, driven by laser-induced coherent phonons of broken inversion symmetry in a centrosymmetric Dirac material ZrTe 5 . Our work suggests that this phononic terahertz symmetry switching leads to formation of Weyl points, whose chirality manifests in a transverse, helicity-dependent current, orthogonal to the dynamical inversion symmetry breaking axis, via circular photogalvanic effect. The temperature-dependent topological photocurrent exhibits several distinct features: Berry curvature dominance, particle–hole reversal near conical points and chirality protection that is responsible for an exceptional ballistic transport length of ~10 μm. These results, together with first-principles modelling, indicate two pairs of Weyl points dynamically created by B 1u phonons of broken inversion symmetry. Such phononic terahertz control breaks ground for coherent manipulation of Weyl nodes and robust quantum transport without application of static electric or magnetic fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhanced dye-sensitized solar cell photocurrent and efficiency using a Y-shaped, pyrazine-containing heteroaromatic sensitizer linkage

A new sensitizer motif for dye sensitized solar cells (DSSC) has been developed. A heteroaromatic moiety containing a pyrazine ring links two porphyrin chromophores to the metal oxide surface via two carboxylic acid attachment groups. A test DSSC sensitized with the new molecule was 3.5 times more efficient than a similar cell sensitized by a single porphyrin model compound. The open circuit photovoltage was increased by a modest factor of 1.3, but the photocurrent increased by a factor of 2.7. Most of the increase is attributed to a reduced rate of charge recombination of the charge separated state formed by photoinduced electron transfer from the excited sensitizer to the TiO 2 , although some of the difference is due to increased light absorption resulting from more dye on the photoanode. Increased light absorption due to the pyrazine-containing group may also play a role. The design illustrated here could also be used to link complementary sensitizers or antenna moieties in order to increase spectral coverage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A new platform for development of photosystem I based thin films with superior photocurrent: TCNQ charge transfer salts derived from ZIF-8

The transmembrane photosynthetic protein complex Photosystem I (PSI) is highly sought after for incorporation into biohybrid photovoltaic devices due to its remarkable photoactive electrochemical properties, chiefly driving charge separation with ~1 V potential and ~100% quantum efficiency. In pursuit of these integrated technologies, three factors must be simultaneously tuned, namely, direct redox transfer steps, three-dimensional coordination and stabilization of PSI aggregates, and interfacial connectivity with conductive pathways. Building on our recent successful encapsulation of PSI in the metal–organic framework ZIF-8, herein we use the zinc and imidazole cations from this precursor to form charge transfer complexes with an extremely strong organic electron acceptor, TCNQ. Specifically, the PSI-Zn-H 2 mim-TCNQ charge transfer salt complex was drop cast on ITO to form dense films. Subsequent voltammetric cycling induced cation exchange and electrochemical annealing of the film was used to enhance electron conductivity giving rise to a photocurrent in the order of 15 μA cm -2 . This study paves the way for a myriad of future opportunities for successful integration of this unique class of charge transfer salt complexes with biological catalysts and light harvesters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Enhanced photocurrent gain and spectrum range based on the composite consisting of SnO{sub 2} nanowires and CdSe quantum dots

High sensitivity with additional spectral response based on the composite consisting of SnO{sub 2} nanowires (NWs) and CdSe quantum dots (QDs) has been demonstrated. The underlying mechanism is attributed to the spatial separation of photogenerated electrons and holes due to the charge transfer arising from type II band alignment between CdSe QD and SnO{sub 2} NW. This work shows that by selective decoration of suitable QDs, the photocurrent gain of NWs not only can be greatly enhanced, but also can be extended to a wider range photoresponse spectrum. Our result, therefore, provides a very useful guideline to create high efficiency photodetectors.

36 MATERIALS SCIENCE↗

Photocurrent-based detection of terahertz radiation in graphene

Graphene is a promising candidate for the development of detectors of Terahertz (THz) radiation. A well-known detection scheme due to Dyakonov and Shur exploits plasma waves in a field-effect transistor (FET), whereby a dc photovoltage is generated in response to a THz field. In the quest for devices with a better signal-to-noise ratio, we theoretically investigate a plasma-wave photodetector in which a dc photocurrent is generated in a graphene FET. The noise equivalent power of our device is shown to be much smaller than that of a Dyakonov-Shur detector in a wide spectral range.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Photocurrent enhancement of perovskite heterojunction by plasmonic nanoparticles and ferroelectric polarization

Perovskite oxides—Pb{sub 0.86}La{sub 0.14}TiO{sub 3} (PLT), AgNbO{sub 3} (ANO), and SrTiO{sub 3} (STO)—were deposited consecutively on ITO/glass substrates to form layered composite photoelectrodes. These materials were chosen for their specific electronic band structures to form efficient photocatalytic heterojunctions and similar crystalline structures to minimize interface defects. Two additional methods were adopted to increase the photocurrent density of the composites: (1) plasmonic gold nanoparticles were introduced at the PLT/ITO interface to enhance light scattering and absorption while not becoming electron trapping centers and (2) the ferroelectric PLT layer was electrically poled toward the ANO layer to create a favorable band bending for electron transfer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

High-performance photocurrent generation from two-dimensional WS{sub 2} field-effect transistors

The generation of a photocurrent from two-dimensional tungsten disulfide (WS{sub 2}) field-effect transistors is examined here, and its dependence on the photon energy is characterized. We found from the WS{sub 2} devices that a significant enhancement in the ratio of illuminated current against dark current (I{sub illum}/I{sub dark}) of ∼10{sup 2}–10{sup 3} is attained, even with the application of electric fields of E{sub D} = 0.02 and E{sub G} = −22 mV/nm, which are much smaller than that of the bulk MoS{sub 2} phototransistor. Most importantly, we demonstrate that our multilayer WS{sub 2} shows an extremely high external quantum efficiency of ∼7000%, even with the smallest electrical field applied. We also found that photons with an energy near the direct band gap of the bulk WS{sub 2}, in the range of 1.9–2.34 eV, give rise to a photoresponsivity of ∼0.27 A/W, which exceeds the photoresponsivity of the bulk MoS{sub 2} phototransistor. The superior photosensing properties of WS{sub 2} demonstrated in this work are expected to be utilized in the development of future high performance two-dimensional optoelectronic devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

An analysis of temperature-dependent absorption and photocurrent spectra in BaAl{sub 2}Se{sub 4} layers

The temperature-dependent photoresponse behavior of BaAl{sub 2}Se{sub 4} layers has been investigated through the analysis of optical absorption and photocurrent (PC) spectra. Based on these results, the optical band gap was well expressed by E{sub g}(T) = E{sub g}(0) − 4.39 × 10{sup −4}T{sup 2}/(T + 250), where E{sub g}(0) is estimated to be 3.4205, 3.6234, and 3.8388 eV for the transitions corresponding to the valence band states Γ{sub 3}(A), Γ{sub 4}(B), and Γ{sub 5}(C), respectively. From the PC measurement, three peaks A, B, and C corresponded with the intrinsic transitions from the valence band states of Γ{sub 3}(A), Γ{sub 4}(B), and Γ{sub 5}(C) to the conduction band state of Γ{sub 1}, respectively. According to the selection rule, the crystal field and spin orbit splitting were found to be 0.2029 and 0.2154 eV, respectively, through the direct use of PC spectroscopy. However, the PC intensities decreased with lowering temperature. In the log J{sub ph} versus 1/T plot, the dominant trap level at the high-temperature region was observed and its value was 12.7 meV. This level corresponds to the activation energy for the electronic transition from the shallow donor levels to the edge of the conduction band. It is estimated that the decrease in the PC intensity is caused by trapping centers related to native defects in the BaAl{sub 2}Se{sub 4} layers. Consequently, this trap level limited the PC intensity with decreasing temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Femtosecond upconverted photocurrent spectroscopy of InAs quantum nanostructures

The carrier upconversion dynamics in InAs quantum nanostructures are studied for intermediate-band solar-cell applications via ultrafast photoluminescence and photocurrent (PC) spectroscopy based on femtosecond excitation correlation (FEC) techniques. Strong upconverted PC-FEC signals are observed under resonant excitation of quantum well islands (QWIs), which are a few monolayer-thick InAs quantum nanostructures. The PC-FEC signal typically decays within a few hundred picoseconds at room temperature, which corresponds to the carrier lifetime in QWIs. The photoexcited electron and hole lifetimes in InAs QWIs are evaluated as functions of temperature and laser fluence. Our results provide solid evidence for electron–hole–hole Auger process, dominating the carrier upconversion in InAs QWIs at room temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The enhanced photocurrent of epitaxial BiFeO{sub 3} film at 130 °C

The short-circuit photocurrent (I{sub SC}) that can be reversed by polarization switch enhances with temperature increasing to 130 °C in the epitaxial BiFeO{sub 3} thin film on SrTiO{sub 3} substrate. The La{sub 2/3}Sr{sub 1/3}MnO{sub 3}/BiFeO{sub 3}/indium tin oxide (In{sub 2}O{sub 3}:SnO{sub 2} = 9:1) junction shows the current rectifying characteristic and the photovoltaic effect at 20–130 °C. Importantly, the I{sub SC} can be reversed by the polarization switch in this temperature range. More charge carriers are activated and the density of free electrons enhances with the increase in the temperature, which results in the decrease in the depletion layer width. As a result, the open-circuit voltage decreases 50% and the I{sub SC} increases from 180 nA to 404 nA with the increase in the temperature from 20 °C to 130 °C. This suggests that the corresponding sensors and devices can be used at a relatively high temperature.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Properties of photocurrent and metal contacts of highly resistive ultrawide bandgap semiconductors

Ultrawide bandgap (UWBG) semiconductors inherently exhibit very high electrical resistivities. This property presents not only challenges in probing their electrical transport properties but also difficulties to fabricate, understand, and characterize the electrical properties of metal contacts on these materials. Here, we report the measurements and analysis of the applied electric field dependence of photocurrent to reveal the effect of metal contacts on the transport properties of highly resistive h-BN. Our results indicate that even for h-BN with a room temperature resistivity as high as 1014 Ω cm, the as-deposited metal contact is not a completely blocking type as commonly assumed in previous analyses for other large bandgap insulating materials. By modifying the boundary condition between the metal/semiconductor interface, a quantitative description has been obtained, which can be used to determine if the metal contact is Ohmic or blocking type. This quantitative description should be applicable to all UWBG semiconductors with extremely high electrical resistivities. The work also provides a better understanding of how the metal contact type affects the transport properties of UWBG semiconductors in general.

Physics↗

Magnetic photocurrents in multifold Weyl fermions

Here, we examine the magneto-optical response of chiral multifold fermions. Specifically, we show that they are ideal candidates for observing the helical magnetic effect (HME) previously predicted for simple Weyl fermions. Unlike Weyl fermions, the HME is present in multifold fermions even in the simplest case where the low-energy dispersion is linear and spherically symmetric. In this ideal case, we derive an analytical expression for the HME and find it is proportional to the circular photogalvanic effect; for realistic parameters and accounting for the geometry of the setup, the HME photocurrent could be roughly the same order of magnitude as the circular photogalvanic effect observed in multifold fermions. Additional nonlinear and symmetry-breaking terms will ruin the quantization but not hurt the observation of the HME.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ballistic photocurrent driven by optical phonon modes in a polaronic ferroelectric

In this study, we investigate the effect of local electron-phonon coupling on nonlinear optical conductivity in an interacting ferroelectric system. Using real-time simulations, we show an enhancement in nonlinear conductivity under linearly polarized light due to generation of the phonon-assisted ballistic current in addition to the injection current generated by electron-hole pairs. The optically excited phonon modes generate an asymmetric carrier distribution that causes a strong directional ballistic current. The ballistic current enhances the photocurrent several times at above band-gap excitation frequencies and is sublinearly dependent on the excitation intensity. This strong phonon-assisted zero-frequency directional ballistic current demonstrates an alternative way to boost the bulk photovoltaic effect (BPVE) in electronic ferroelectric materials with strong local electron-phonon coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Superlinear increase of photocurrent due to stimulated scattering into a polariton condensate

We show that when a monopolar current is passed through an n-i-n structure, superlinear photocurrent response occurs when there is a polariton condensate. This is in sharp contrast to the previously observed behavior for a standard semiconductor laser. Theoretical modeling shows that this is due to a stimulated exciton-exciton scattering process in which one exciton relaxes into the condensate, while another one dissociates into an electron-hole pair.

14 SOLAR ENERGY↗

Unconventional Photocurrents from Surface Fermi Arcs in Topological Chiral Semimetals

The nonlinear optical responses from topological semimetals are crucial in both understanding the fundamental properties of quantum materials and designing next-generation light sensors or solar cells. However, previous work focused on the optical effects from bulk states only, disregarding the responses from topological surface states. Here, we propose a new surface-only photocurrent response from chiral Fermi arcs. Using the ideal topological chiral semimetal RhSi as a representative, we quantitatively compute the photogalvanic currents from Fermi arcs on different surfaces. By rigorous crystal symmetry analysis, we demonstrate that Fermi arc photogalvanic currents can be perpendicular to the bulk injection currents regardless of the choice of materials surface. We then generalize this finding to other cubic chiral space groups and predict material candidates. Our theory reveals a powerful notion where common crystalline symmetry can be used to completely disentangle bulk and surface optical responses in many conducting material families.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Photocurrent Nanoscopy of Quantum Hall Bulk

Understanding nanoscale electronic and thermal transport of two-dimensional (2D) electron systems in the quantum Hall regime, particularly in the bulk insulating state, poses considerable challenges. One of the primary difficulties arises from the presence of chiral edge channels, whose transport behavior obscures the investigation of the insulating bulk. Using near-field optical and photocurrent nanoscopy, we probe real-space variations of the optical and thermal dynamics of graphene in the quantum Hall regime without relying on complex sample or electrode geometries. Near the charge-neutrality point, we detect strong optical and photothermal signals from resonant inter-Landau-level (LL) magnetoexciton excitations between the zeroth and ± 1 st LLs, which gradually weaken with increasing doping due to Pauli blocking. Interestingly, at higher doping levels and full-integer LL fillings, photothermal signals reappear across the entire sample over an approximately 10 − μ m scale, indicating unexpectedly long cooling lengths and nonlocal photothermal heating through the insulating bulk. This observation suggests that thermal conductivity persists for the localized states even as electronic transport is suppressed—a clear violation of the Wiedemann-Franz law. Our experiments provide novel insights into nanoscale thermal and electronic transport in incompressible 2D gases, highlighting the roles of magnetoexcitons and chiral edge states in the thermo-optoelectric dynamics of the Dirac quantum Hall state. Published by the American Physical Society 2025

36 MATERIALS SCIENCE↗

Simultaneous Examination of Grain-Boundary Potential, Recombination, and Photocurrent in CdTe Solar Cells Using Diverse Nanometer-Scale Imaging

We report on the simultaneous measurements of Kelvin probe force microscopy (KPFM), cathodoluminescence (CL), and electron-beam induced current (EBIC) for hundreds of grain boundaries (GBs) after different processing steps. The GB potential steadily increases from tens of mV for as-deposited samples, 80 mV after the Cl treatment, to about 120 mV after Cu diffusion (Cl+Cu). The latter is consistent with the emergence of deep Cu defects observed in CL GB spectra. At the same time, EBIC indicates that GB photocurrent is enhanced by 0% to 50% after Cu is introduced. However, this increase is very modest relative to expectations based on computational modeling and the measured GB potential. The EBIC enhancement coincides with increased GB recombination observed by CL. A plausible explanation is that GB defects introduce GB potentials and increase GB recombination; this can reconcile the CL, EBIC, and KPFM data.

14 SOLAR ENERGY↗

Helicity-dependent photocurrents in the chiral Weyl semimetal RhSi

Weyl semimetals are crystals in which electron bands cross at isolated points in momentum space. Associated with each crossing point (or Weyl node) is a topological invariant known as the Berry monopole charge. The circular photogalvanic effect (CPGE), whereby circular polarized light generates a helicity-dependent photocurrent, is a notable example of a macroscopic property that emerges directly from the topology of the Weyl semimetal band structure. Recently, it was predicted that the amplitude of the CPGE associated with optical transitions near a Weyl node is proportional to its monopole charge. In chiral Weyl systems, nodes of opposite charge are nondegenerate, opening a window of wavelengths where the CPGE resulting from uncompensated Berry charge can emerge. Here, we report measurements of CPGE in the chiral Weyl semimetal RhSi, revealing a CPGE response in an energy window that closes at 0.65 eV, in agreement with the predictions of density functional theory.

36 MATERIALS SCIENCE↗