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At least 145 records · Page 8

EFFECT OF SPACE ENVIRONMENT ON PHOTOVOLTAIC CELLS

A series of theoretical calculations have been performed concerning inelastic nuclear interactions between incident high energy protons and silicon. The results of these calculations, summarized here, indicate that, above incident proton energies of about 20 Mev, the primary defect production mechanism is inelastic nuclear interactions. Additional evidence is presented which indicates that the defect structures produced by these inelastic nuclear interactions are significantly more complicated than those produced by electron and lower energy proton induced elastic nuclear interactions. Based on these phenomena, it is shown that high energy proton experimental damage data on silicon photovoltaic devices obtained at low illumination intensities cannot be applied directly to spacecraft photovoltaic power supply systems designed to operate at the illumination levels existing in space.

SILICON↗

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Stupica, John↗

Performance and durability of HgI2 X-ray detectors for space missions

Considerable progress has been achieved recently in HgI2 detector fabrication technology and amplification electronics. An energy resolution of 198 eV (full width at half maximum) has been obtained for the Mn k-alpha line of 5.9 keV in a practical X-ray probe without the use of cryogenic cooling. Detectors prepared with Parylene-C encapsulation have demonstrated perfect reliability in two-year tests under high vacuum and temperature and bias cycling. Other HgI2 detectors have been used to demonstrate proton-radiation-damage resistance to levels of 10 to the 12 protons/sq cm at 10.7 MeV. It is concluded that HgI2 detectors are suitable for the ordinary requirements of energy dispersive detectors in X-ray spectroscopy systems.

Iwanczyk, J. S.↗

Computer simulation of radiation damage in gallium arsenide

A version of the binary-collision simulation code MARLOWE was used to study the spatial characteristics of radiation damage in proton and electron irradiated gallium arsenide. Comparisons made with the experimental results proved to be encouraging.

Stith, John J.↗

The Effects of Space Radiation on Linear Integrated Circuit

Permanent and transient effects are discussed that are induced in linear integrated circuits by space radiation. Recent developments include enhanced damage at low dose rate, increased damage from protons due to displacement effects, and transients in digital comparators that can cause circuit malfunctions.

space radiation total dose single event upset↗

Space Environment Testing of Photovoltaic Array Systems at NASA's Marshall Space Flight Center

To successfully operate a photovoltaic (PV) array system in space requires planning and testing to account for the effects of the space environment. It is critical to understand space environment interactions not only on the PV components, but also the array substrate materials, wiring harnesses, connectors, and protection circuitry (e.g. blocking diodes). Key elements of the space environment which must be accounted for in a PV system design include: Solar Photon Radiation, Charged Particle Radiation, Plasma, and Thermal Cycling. While solar photon radiation is central to generating power in PV systems, the complete spectrum includes short wavelength ultraviolet components, which photo-ionize materials, as well as long wavelength infrared which heat materials. High energy electron radiation has been demonstrated to significantly reduce the output power of III-V type PV cells; and proton radiation damages material surfaces - often impacting coverglasses and antireflective coatings. Plasma environments influence electrostatic charging of PV array materials, and must be understood to ensure that long duration arcs do not form and potentially destroy PV cells. Thermal cycling impacts all components on a PV array by inducing stresses due to thermal expansion and contraction. Given such demanding environments, and the complexity of structures and materials that form a PV array system, mission success can only be ensured through realistic testing in the laboratory. NASA's Marshall Space Flight Center has developed a broad space environment test capability to allow PV array designers and manufacturers to verify their system's integrity and avoid costly on-orbit failures. The Marshall Space Flight Center test capabilities are available to government, commercial, and university customers. Test solutions are tailored to meet the customer's needs, and can include performance assessments, such as flash testing in the case of PV cells.

Phillips, Brandon S.↗

Radiation Tolerance Studies of Long Wavelength Infrared InAs/GaSb Detectors

In this work we investigated the effect of proton irradiation on the performance of long wavelength infrared (LWIR) InAs/GaSb photodiodes (λ(sub c) = 10.2µm) based on the complementary barrier infrared detector (CBIRD) design. We found that irradiation with 68MeV protons up to the total ionizing dose TID = 200 kRad results in only small (about 15%) decrease of the Quantum Efficiency and does not increase the operational bias of the photodiodes. However, the irradiation causes a significant increase of the dark current from j(sub d) = 5x10(exp -5) A/sq cm at V(sub b) = 0.1V and T = 80K to j(sub d) = 6x10(exp -3) A/sq cm at TID = 200 kRad. This change in the dark current mechanism can be attributed to the onset of surface leakage current, generated by the trap assisted tunneling processes in the proton displacement damage areas near the device sidewalls.

InAs/GaSb photodiodes↗

Diffusion length damage coefficient and annealing studies in proton-irradiated InP

We report on the measurement of the diffusion length damage coefficient (K(sub L)) and the annealing characteristics of the minority carrier diffusion length (L(sub n)) in Czochralski-grown zinc-doped indium phosphide (InP), with a carrier concentration of 1 x 10(exp l8) cm(exp -3). In measuring K(sub L) irradiations were made with 0.5 MeV protons with fluences ranging from 1 x 10(exp 11) to 3 x 10(exp 13) cm(exp -2). Pre- and post-irradiation electron-beam induced current (EBIC) measurements allowed for the extraction of L(sub n) from which K(sub L) was determined. In studying the annealing characteristics of L(sub n) irradiations were made with 2 MeV protons with fluence of 5 x 10(exp 13) cm(exp -2). Post-irradiation studies of L(sub n) with time at room temperature, and with minority carrier photoinjection and forward-bias injection were carried out. The results showed that recovery under Air Mass Zero (AMO) photoinjection was complete. L(sub n) was also found to recover under forward-bias injection, where recovery was found to depend on the value of the injection current. However, no recovery of L(sub n) after proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electron-irradiated InP solar cells reported previously.

Hakimzadeh, Roshanak↗

Designer's guide to radiation effects on materials for use on Jupiter fly-bys and orbiters

This paper summarizes the state-of-the-art of the complex field of radiation effects on spacecraft materials. It is intended as a guide for designers of systems exposed to damaging electrons and protons. The emphasis is on the relative damage levels for the more common materials that may be used. Information on the preliminary flux and fluence levels of the yet to be designed Jupiter orbiter, Galileo, is also presented.

Bouquet, F. L.↗