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At least 145 records · Page 8

Structural and electronic properties of V{sub 2}O{sub 3} ultrathin film on Ag(001): LEED and photoemission study

V{sub 2}O{sub 3} ultrathin films were grown on Ag(001) substrate by reactive evaporation of vanadium (V) metal in presence of oxygen and their structural and electronic properties were studied by Low Energy Electron Diffraction (LEED), X-ray Photo Electron Spectroscopy (XPS) and Angle Resolved Photoemission Spectroscopic (ARPES) techniques, respectively. On top of square symmetry substrate Ag(001), hexagonal surface of V{sub 2}O{sub 3} (0001) is stabilized in the form of two domain structure, rotated by 30°(or 90°)to each other, has been observed by LEED. Rather than epitaxial flat monolayer, formation of well-ordered V{sub 2}O{sub 3} (0001) island has been confirmed from the LEED and the Photoemission Spectroscopic (PES) study. Stoichiometry of the grown film was confirmed by the XPS study. Evolution of valance band electronic structure of V{sub 2}O{sub 3} (0001) surface has been studied as a function of film thickness by ARPES.

36 MATERIALS SCIENCE↗

Thickness-dependent change in the valence band offset of the SiO{sub 2}/Si interface studied using synchrotron-radiation photoemission spectroscopy

We have studied the thickness-dependent change in the valence band offset (VBO) of the SiO{sub 2}/Si(001) interface using synchrotron-radiation photoemission spectroscopy with soft and hard X-rays. The SiO{sub 2}-film thickness (T{sub ox}) and X-ray irradiation time (t{sub irrad}) were systematically parameterized to distinguish between the “intrinsic” T{sub ox} effects in the VBOs and the “extrinsic” differential charging phenomena in SiO{sub 2} films on Si substrates. The results revealed that at a spontaneous time (t{sub irrad} ≈ 5 s) that suppresses the differential charging phenomena as much as possible, the experimental VBO abruptly increases as a function of T{sub ox} and gradually saturates to the traditional VBO value range determined by the internal photoemission and photoconduction measurements. This effect is not attributed to the differential charging phenomena, but rather it is attributed to the “intrinsic” T{sub ox}-dependent change in the VBO. The two possible physical behaviors include electronic polarization and image charge. We have derived the electronic polarization contribution from experimental data by carefully describing the effects of the long-range image charges based on the classical dielectric-screening model.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Femtosecond photoemission electron microscopy of surface plasmon polariton beam steering via nanohole arrays

Directional control over surface plasmon polariton (SPP) waves is a prerequisite for the development of miniaturized optical circuitry. Here, the efficacy of single and dual component SPP steering elements is explored through photoemission electron microscopy. Our imaging scheme relies on two-color photoemission and counter-propagating SPP generation, which collectively allow SPPs to be visualized in real space. Wave-vector difference mixing between two-dimensional arrays of nanoholes and photon momenta enables SPP steering with directionality governed by the array lattice constant. The magnitude of grating momentum required to achieve counter-propagation guarantees efficient steering over the full range of the negative half-space. In our dual component configuration, separate SPP generation and Bragg diffraction based steering optics are employed. We find that array Bragg planes principally influence the SPP angles through the array band structure, which allows us to visualize both positive and negative refractory waves.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Polarization dependent photoemission as a probe of the magnetic ground state in the van der Waals ferromagnet VI 3

Van der Waals ferromagnets are thrilling materials from both a fundamental and technological point of view. VI 3 is an interesting example, with a complex magnetism that differentiates it from the first reported Cr based layered ferromagnets. In this work, we show in an indirect way through angle resolved photoemission spectroscopy experiments, the importance of spin–orbit coupling setting the electronic properties of this material. Our light polarized photoemission measurements point to a ground state with a half-filled $\mathcal{e}_{±}^{'}$ doublet, where a gap opening is triggered by spin–orbit coupling enhanced by electronic correlations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Modifications in the charge trap landscape in Hf 0.5 Zr 0.5 O 2 as a function of oxygen vacancy concentration observed with photoemission electron microscopy

Oxygen vacancies in Hf x Zr (1-x) O 2 (HZO) both contribute to stabilization of the ferroelectric orthorhombic phase and promote leakage pathways that limit the endurance of devices based on the material. Here, for this reason, the defect states of oxygen vacancies were investigated using photoemission electron microscopy (PEEM) and photoluminescence spectroscopy (PL), as their concentration was varied via ex situ laser exposure. Following a controlled oxygen vacancy reduction via visible (2.54 eV) laser dosing of HZO, deep-ultraviolet (DUV, 5.82 eV) PEEM was used to spatially probe the resulting mid-gap defect states and work function. Work function was found to increase monotonically with the laser-induced reduction in oxygen vacancy concentration culminating in a total increase near 70 meV. The change implies a Fermi level shift toward the valence band as the total available electron-filled charge states are reduced with the removal of oxygen vacancies. A reduction in charge states is corroborated by the observed lessening of both photoemission and photoluminescence intensities after laser dosing. The deduced position of the Fermi level is within a band of near-conduction band defect states produced by oxygen vacancies that are linked to endurance limiting leakage currents. Together, these results directly identify the primary role of oxygen vacancies on the defect states in HZO while demonstrating that laser exposure can be used for their modification.

42 ENGINEERING↗

Bulk photoemission from metal films and nanoparticles

Internal emission of photoelectrons from metal films and nanoparticles (nanowires and nanospheres) into a semiconductor matrix is studied theoretically by taking into account the jump of the effective electron mass at the metal – semiconductor interface and the cooling effect of hot electrons due to electron – electron collisions in the metal. The internal quantum efficiency of photoemission for the film and nanoparticles of two types (nanospheres and nanowires) is calculated. It is shown that the reduction of the effective mass of the electron during its transition from metal to semiconductor may lead to a significant (orders of magnitude and higher) decrease in the internal quantum efficiency of bulk photoemission. (nanostructures)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Photoemission spectrum and effect of inhomogeneous pairing fluctuations in the BCS-BEC crossover regime of an ultracold Fermi gas

We investigate the photoemission-type spectrum in a cold Fermi gas which was recently measured by the JILA group [Stewart et al., Nature (London) 454, 744 (2008)]. This quantity gives us very useful information about single-particle properties in the BCS-BEC crossover. In this paper, including pairing fluctuations within a T-matrix theory, as well as effects of a harmonic trap within the local density approximation, we show that spatially inhomogeneous pairing fluctuations due to the trap potential are an important key to understanding the observed spectrum. In the crossover region, while strong pairing fluctuations lead to the so-called pseudogap phenomenon in the trap center, such strong-coupling effects are found to be weak around the edge of the gas. Our results including this effect are shown to agree well with the recent photoemission data of the JILA group.

74 ATOMIC AND MOLECULAR PHYSICS↗

Quantum-electrodynamic treatment of photoemission by a single-electron wave packet

A quantum-field-theory description of photoemission by a laser-driven single-electron wave packet is presented. We show that, when the incident light is represented with multimode coherent states then, to all orders of perturbation theory, the relative phases of the electron's constituent momenta have no influence on the amount of scattered light. These results are extended using the Furry picture, where the (unidirectional) arbitrary incident light pulse is treated nonperturbatively with Volkov functions. This analysis increases the scope of our prior results in [Phys. Rev. A 84, 053831 (2011)], which demonstrate that the spatial size of the electron wave packet does not influence photoemission.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Near-Threshold Photoemission from Graphene-Coated Cu(110)

In this article, the brightness of electron beams emitted from photocathode sources plays a critical role in determining the performance of x-ray free-electron lasers and ultrafast electron-diffraction applications. In order to achieve the maximum brightness, the electrons need to be emitted from a photocathode with the lowest-possible mean transverse energy (MTE). Recent investigations have shown that capping a Cu(110) photocathode with a monolayer of graphene can protect the quantum efficiency (QE) from long-term exposure to varying vacuum conditions. However, there have been no studies that investigate the effects that a monolayer of graphene has on the MTE. Here, we report on measurements of a graphene-coated Cu(110) single crystal near the photoemission threshold for room and liquid-nitrogen temperatures. At room temperature, a minimum MTE of 25 meV is measured at 295 nm. At liquid-nitrogen temperatures, a minimum MTE of 9 meV is measured at the photoemission threshold of 290 nm.

36 MATERIALS SCIENCE↗

Electronic structure of LiCoO{sub 2} thin films: A combined photoemission spectroscopy and density functional theory study

The electronic properties of LiCoO{sub 2} have been studied by theoretical band-structure calculations (using density functional theory) and experimental methods (photoemission). Synchrotron-induced photoelectron spectroscopy, resonant photoemission spectroscopy (ResPES), and soft x-ray absorption (XAS) have been applied to investigate the electronic structure of both occupied and unoccupied states. High-quality PES spectra were obtained from stoichiometric and highly crystalline LiCoO{sub 2} thin films deposited ''in situ'' by rf magnetron sputtering. An experimental approach of separating oxygen- and cobalt-derived (final) states by ResPES in the valence-band region is presented. The procedure takes advantage of an antiresonant behavior of cobalt-derived states at the 3p-3d excitation threshold. Information about the unoccupied density of states has been obtained by O K XAS. The structure of the Co L absorption edge is compared to semiempirical charge-transfer multiplet calculations. The experimental results are furthermore compared with band-structure calculations considering three different exchange potentials [generalized gradient approximation (GGA), using a nonlocal Hubbard U (GGA+U) and using a hybrid functional (Becke, three-parameter, Lee-Yang-Parr [B3LYP])]. For these different approaches total density of states and partial valence-band density of states have been investigated. The best qualitative agreement with experimental results has been obtained by using a GGA+U functional with U=2.9 eV.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Conduction-band electronic states of YbInCu{sub 4} studied by photoemission and soft x-ray absorption spectroscopies

We have studied conduction-band (CB) electronic states of a typical valence-transition compound YbInCu{sub 4} by means of temperature-dependent hard x-ray photoemission spectroscopy (HX-PES) of the Cu 2p{sub 3/2} and In 3d{sub 5/2} core states taken at h{nu}=5.95 keV, soft x-ray absorption spectroscopy (XAS) of the Cu 2p{sub 3/2} core absorption region around h{nu}{approx}935 eV, and soft x-ray photoemission spectroscopy (SX-PES) of the valence band at the Cu 2p{sub 3/2} absorption edge of h{nu}=933.0 eV. With decreasing temperature below the valence transition at T{sub V}=42 K, we have found that (1) the Cu 2p{sub 3/2} and In 3d{sub 5/2} peaks in the HX-PES spectra exhibit the energy shift toward the lower binding-energy side by {approx}40 and {approx}30 meV, respectively, (2) an energy position of the Cu 2p{sub 3/2} main absorption peak in the XAS spectrum is shifted toward higher photon-energy side by {approx}100 meV, with an appearance of a shoulder structure below the Cu 2p{sub 3/2} main absorption peak, and (3) an intensity of the Cu L{sub 3}VV Auger spectrum is abruptly enhanced. These experimental results suggest that the Fermi level of the CB-derived density of states is shifted toward the lower binding-energy side. We have described the valence transition in YbInCu{sub 4} in terms of the charge transfer from the CB to Yb 4f states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ultracold Electrons via Near-Threshold Photoemission from Single-Crystal Cu(100)

Achieving a low mean transverse energy or temperature of electrons emitted from the photocathode-based electron sources is critical to the development of next-generation and compact x-ray free electron lasers and ultrafast electron diffraction, spectroscopy, and microscopy experiments. In this Letter, we demonstrate a record low mean transverse energy of 5 meV from the cryo-cooled (100) surface of copper using near-threshold photoemission. Further, we also show that the electron energy spread obtained from such a surface is less than 11.5 meV, making it the smallest energy spread electron source known to date: more than an order of magnitude smaller than any existing photoemission, field emission, or thermionic emission based electron source. Overall, our measurements also shed light on the physics of electron emission and show how the energy spread at few meV scale energies is limited by both the temperature and the vacuum density of states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optimisation of NSLS-II Blade X-ray Beam Position Monitors: from Photoemission type to Diamond Detector

Optimisation of blade type x-ray beam position monitors (XBPM) was performed for NSLS-II undulator IVU20. Blade material, con and #64257;guration and operation principle was analysed in order to improve XBPM performance. Optimisation is based on calculation of the XBPM signal spatial distribution. Along with standard photoemission type XBPM a Diamond Detector Blades (DDB) were analysed as blades for XBPMs. DDB XBPMs can help to overcome drawbacks of the photoemission blade XBPMs.

43 PARTICLE ACCELERATORS↗

Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon energies were investigated. Essential steps in SAW device fabrication on a GaAs substrate are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of current–voltage (I–V) characteristics of the SAW device, and ability to survive high-temperature annealing. Results obtained and reported in this study provide the potential and basis for future studies on building SAW-enhanced photocathodes, as well as other GaAs photoelectric applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Si 1-X Ge X /Si Heterojunction Internal Photoemission Long Wavelength Infrared Detector

Long wavelength Si 1-X Ge X /Si heterojunction internal photoemission (HIP) infrared detectors have been successfully demonstrated utilizing the growth of degenerately boron doped Si 1-X Ge X layers on Si. Recently, Si 0.7 GE 0.3 /SI HIP detectors with either a Si 1-X Ge X single layer or a Si 1-X Ge X /Si multilayer have been demonstrated with cutoff wavelengths out to 23 µm. Near-ideal thermionic emission dark current characteristics were measured and the electrical potential barriers were determined by the Richardson plot. A photoresponse model, similar to the modified Fowler Equation has been developed for the Si 1-X Ge X /Si heterojunction internal photoemission infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. The optical potential barriers, the corresponding cutoff wavelengths, and the emission coefficients, C 1 , for the HIP detectors have been determined from the measured spectral responses using the photoresponse model. Similar optical and thermal potential barriers were obtained.

infrared↗

Raising Photoemission Efficiency with Surface Acoustic Waves

We are developing a novel technique that may help increase the efficiency and reduce costs of photoelectron sources used at electron accelerators. The technique is based on the use of Surface Acoustic Waves (SAW) in piezoelectric materials, such as GaAs, that are commonly used as photocathodes. Piezoelectric fields produced by the traveling SAW spatially separate electrons and holes, reducing their probability of recombination, thereby enhancing the photoemission quantum efficiency of the photocathode. Additional advantages could be increased polarization provided by the enhanced mobility of charge carriers that can be controlled by the SAW and the ionization of optically-generated excitons resulting in the creation of additional electron-hole pairs. It is expected that these novel features will reduce the cost of accelerator operation. A theoretical model for photoemission in the presence of SAW has been developed, and experimental tests of the technique are underway.

43 PARTICLE ACCELERATORS↗

Angle-resolved photoemission studies of lattice polaron formation in the cuprate Ca2CuO2Cl2

To elucidate the nature of the single-particle excitations in the undoped parent cuprates, we have performed a detailed study of Ca{sub 2}CuO{sub 2}Cl{sub 2} using photoemission spectroscopy. The photoemission lineshapes of the lower Hubbard band are found to be well-described by a polaron model. By comparing the lineshape and temperature dependence of the lower Hubbard band with additional O 2p and Ca 3p states, we conclude that the dominant broadening mechanism arises from the interaction between the photohole and the lattice. The strength of this interaction was observed to be strongly anisotropic and may have important implications for the momentum dependence of the first doped hole states.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Photoemission Electron Microscopy of a Plasmonic Silver Nanoparticle Trimer

We present a combined experimental and theoretical study to investigate the spatial distribution of photoelectrons emitted from core-shell silver (Ag) nanoparticles. We use two-photon photoemission microscopy (2P-PEEM) to spatially resolve electron emission from a trimeric core-shell aggregate of triangular symmetry. Finite difference time domain (FDTD) simulations are performed to model the intensity distributions of the electromagnetic near-fields resulting from femtosecond (fs) laser excitation of localized surface plasmon oscillations in the triangular core-shell structure. We demonstrate that the predicted FDTD near-field intensity distribution reproduces the 2P-PEEM photoemission pattern.

Environmental Molecular Sciences Laboratory↗