Searching for superconductivity in high entropy oxide Ruddlesden?Popper cuprate films
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Mazza, Alessandro R.↗
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Results for “Mott Insulator”
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Percolation and nanosecond fluctuators in V 2 O 3 films within the metal–insulator transition
Vanadium sesquioxide (V 2 O 3 ) exhibits a metal–insulator transition (MIT) at 160 K between a low temperature, monoclinic, antiferromagnetic Mott insulator and a high temperature, rhombohedral, paramagnetic, metallic phase. In thin films, a percolative transition takes place over a finite temperature range of phase coexistence. We study the fluctuating dynamics of this percolative MIT by measuring voltage noise spectra at both low frequencies (up to 100 kHz) and radio frequencies (between 10 MHz and 1 GHz). Noise intensity quadratic in bias is observed in the MIT region, as expected for resistive fluctuations probed nonperturbatively by the current. The low frequency noise resembles flicker-type 1/f β noise, often taking on the form of Lorentzian noise dominated by a small number of fluctuators as the volume fraction of the insulating phase dominates. Radio frequency noise intensity also quadratic in the bias current allows the identification of resistance fluctuations with lifetimes below 1 ns, approaching timescales seen in non-equilibrium pump–probe studies of the transition. We find quantitative consistency with a model for fluctuations in the percolative fraction. The thermodynamics of the MIT suggests that dominant fluctuations are ones that alter small volumes affecting the connectivity of domain boundaries. This noise serves as a sensitive and nonperturbative probe for the dynamics of switching phenomena in this system.
36 MATERIALS SCIENCE↗
Metal-insulator transition in V 2 O 3 with intrinsic defects
Vanadium sesquioxide (V 2 O 3 ) is a Mott insulator exhibiting a temperature-dependent metal-insulator transition (MIT) at 165 K accompanied by both a magnetic and structural transition. Although it is expected to be a metal under conventional band theory, electron interactions at low temperature cause it to behave like an insulator, making it difficult to accurately model its electronic properties with standard ab initio methods. As such, accurate theoretical assessments of the MIT with point defects requires special attention to the type of functionals used. In this study, we conclude that the PBE + U functional provides the best compromise between accuracy and efficiency in calculating the properties related to the MIT between low-temperature and high-temperature V 2 O 3 . We use this functional to explore the various influences that intrinsic point defects will have on the MIT in V 2 O 3 .
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Band-mixing effects in one-dimensional charge transfer insulators
The low-energy properties of transition metal oxides (TMOs) are governed by the electrons occupying strongly correlated $d$-orbitals that are hybridized with surrounding ligand oxygen $p$ orbitals to varying degrees. Their physics is thus established by a complex interplay between the transition-metal (TM)-ligand hopping $t$, charge transfer energy $\Delta_\mathrm{CT}$, and on-site TM Hubbard repulsion $U$. Here, we study the spectral properties of a one-dimensional (1D) analog of such a $pd$ system, with alternating TM $d$ and ligand anion $p$ orbitals situated along a chain. Using the density matrix renormalization group method, we study the model's single-particle spectral function, x-ray absorption spectrum, and dynamical spin structure factor as a function of $\Delta_\mathrm{CT}$ and $U$. In particular, we present results spanning from the Mott insulating ($\Delta_\mathrm{CT} > U$) to negative charge transfer regime $\Delta_\mathrm{CT} < 0$ to gain a better understanding of the ground and momentum-resolved excited state properties of these different regimes. Our results can guide new studies on TMOs that seek to situate them within the Mott-Hubbard/charge transfer insulator classification scheme.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation
Atomic monolayers on semiconductor surfaces represent an emerging class of functional quantum materials in the two-dimensional limit — ranging from superconductors and Mott insulators to ferroelectrics and quantum spin Hall insulators. Indenene, a triangular monolayer of indium with a gap of ~ 120 meV is a quantum spin Hall insulator whose micron-scale epitaxial growth on SiC(0001) makes it technologically relevant. However, its suitability for room-temperature spintronics is challenged by the instability of its topological character in air. It is imperative to develop a strategy to protect the topological nature of indenene during ex situ processing and device fabrication. Here we show that intercalation of indenene into epitaxial graphene provides effective protection from the oxidising environment, while preserving an intact topological character. Our approach opens a rich realm of ex situ experimental opportunities, priming monolayer quantum spin Hall insulators for realistic device fabrication and access to topologically protected edge channels.
36 MATERIALS SCIENCE↗
Twisting the Hubbard model into the momentum-mixing Hatsugai–Kohmoto model
The Hubbard model is a standard theoretical tool for studying materials with strong electron–electron interactions, such as cuprate superconductors. Unfortunately, interaction-driven phenomena, such as a transition into the strongly correlated Mott insulator phase, are difficult to treat with established theoretical techniques. However, the exactly solvable Hatsugai–Kohmoto model displays similar Mott physics. In this work we show how the Hatsugai–Kohmoto model can be deformed continuously into the Hubbard model. The trick is to systematically reintroduce all the momentum mixing that the original Hatsugai–Kohmoto model omits. This can be accomplished by grouping n momenta into a cell and hybridizing them, resulting in the momentum-mixing Hatsugai–Kohmoto model. We recover the Bethe ansatz ground-state energy of the one-dimensional Hubbard model to within 1% from only ten mixed momenta. Overall, the convergence scales as 1/n2 as opposed to the inverse linear behaviour of standard finite-cluster techniques. Our results for a square lattice reproduce all the known features from state-of-the-art simulations also with only a few mixed momenta. Consequently, we believe that the momentum-mixing Hatsugai–Kohmoto model offers an alternative tool for strongly correlated quantum matter.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Hund Physics Landscape of Two-Orbital Systems
Motivated by the recent discovery of superconductivity in infinite-layer nickelates RE 1–δ Sr δ NiO 2 (RE = Nd, Pr), we study the role of Hund coupling J in a quarter-filled two-orbital Hubbard model, which has been on the periphery of the attention. Here, a region of negative effective Coulomb interaction of this model is revealed to be differentiated from three- and five-orbital models in their typical Hund metal active fillings. We identify distinctive regimes including four different correlated metals, one of which stems from the proximity to a Mott insulator, while the other three, which we call “intermediate” metal, weak Hund metal, and valence-skipping metal, from the effect of J being away from Mottness. Defining criteria characterizing these metals is suggested, establishing the existence of Hund metallicity in two-orbital systems.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Mirror symmetry breaking in a model insulating cuprate
Among the most actively studied issues in the cuprates are the natures of the pseudogap and strange metal states and their relationship to superconductivity. There is general agreement that the low-energy physics of the Mott-insulating parent state is well captured by a two-dimensional spin S = 1/2 antiferromagnetic Heisenberg model. However, recent observations of a large thermal Hall conductivity in several parent cuprates appear to defy this simple model and suggest proximity to a magneto-chiral state that breaks all mirror planes that are perpendicular to the CuO 2 layers. Here we use optical second harmonic generation to directly resolve the point group symmetries of the model parent cuprate Sr 2 CuO 2 Cl 2 . We report evidence of an order parameter that breaks all perpendicular mirror planes and is consistent with a magneto-chiral state in zero magnetic field. Although this order is clearly coupled to the antiferromagnetism, we are unable to realize its time-reversed partner by thermal cycling through the antiferromagnetic transition temperature or by sampling different spatial locations. Finally, this suggests that the order onsets above the Neel temperature and may be relevant to the mechanism of pseudogap formation.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Nano-infrared imaging of metal insulator transition in few-layer 1T-TaS 2
Abstract Among the family of transition metal dichalcogenides, 1T-TaS 2 stands out for several peculiar physical properties including a rich charge density wave phase diagram, quantum spin liquid candidacy and low temperature Mott insulator phase. As 1T-TaS 2 is thinned down to the few-layer limit, interesting physics emerges in this quasi 2D material. Here, using scanning near-field optical microscopy, we perform a spatial- and temperature-dependent study on the phase transitions of a few-layer thick microcrystal of 1T-TaS 2 . We investigate encapsulated air-sensitive 1T-TaS 2 prepared under inert conditions down to cryogenic temperatures. We find an abrupt metal-to-insulator transition in this few-layer limit. Our results provide new insight in contrast to previous transport studies on thin 1T-TaS 2 where the resistivity jump became undetectable, and to spatially resolved studies on non-encapsulated samples which found a gradual, spatially inhomogeneous transition. A statistical analysis suggests bimodal high and low temperature phases, and that the characteristic phase transition hysteresis is preserved down to a few-layer limit.
42 ENGINEERING↗
Timescales of excited state relaxation in α–RuCl 3 observed by time-resolved two-photon photoemission spectroscopy
The nonequilibrium properties of strongly correlated materials present a target in the search for new phases of matter. It is important to observe the types of excitations that exist in these materials and their associated relaxation dynamics. We have studied the photoexcitations in a spin-orbit assisted Mott insulator α–RuCl 3 using time-resolved two-photon photoemission spectroscopy and transient reflection spectroscopy. We find that photoexcited carriers (doublons) in the upper Hubbard band rapidly relax to Mott-Hubbard excitons on a timescale of less than 200 fs. Subsequently, further relaxation of these lower-energy quasiparticles occurs with an energy-dependent time constant of that ranges from 370 to 600 fs due to exciton cooling. The population of Mott-Hubbard excitons persists for timescales up to several microseconds.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Theoretical study of the crystal and electronic properties of α - RuI 3
The material α-RuCl 3 , with a two-dimensional Ru honeycomb sublattice, has attracted considerable attention because it may be a realization of the Kitaev quantum spin liquid. Recently, a new honeycomb material, α-RuCl 3 , was prepared under moderately high pressure, and it is stable under ambient conditions. However, different from α-RuCl 3 , α-RuI 3 was reported to be a paramagnetic metal without long-range magnetic order down to 0.35 K. Here, the structural and electronic properties of the quasi-two-dimensional α-RuI 3 are theoretically studied. First, based on first-principles density functional theory calculations, the ABC stacking honeycomb-layer R$\bar{3}$ (No. 148) structure is found to be the most likely stacking order for α-RuI 3 along the c axis. Furthermore, both R$\bar{3}$ and P$\bar{3}$1c are dynamically stable because no imaginary frequency modes were obtained in the phononic dispersion spectrum without Hubbard U. Moreover, the different physical behavior of α-RuI 3 compared to α-RuCl 3 can be understood naturally. The strong hybridization between Ru 4d and I 5p orbitals decreases the “effective” atomic Hubbard repulsion, leading the electrons of RuI3 to be less localized than in RuCl 3 . As a consequence, the effective electronic correlation is reduced from Cl to I, leading to the metallic nature of α-RuI 3 . Based on the DFT+U (Ueff=2 eV) plus spin-orbital coupling, we obtained a spin-orbit Mott insulating behavior for α-RuCl 3 and, with the same procedure, a metallic behavior for α-RuI 3 , in good agreement with experimental results. Furthermore, when introducing large (unrealistic) U eff =6 eV, the spin-orbit Mott gap opens in α-RuI 3 as well, supporting the physical picture we are proposing. Our results provide guidance to experimentalists and theorists working on two-dimensional transition metal tri-iodide layered materials.
2-dimensional systems↗
Nanoscale Imaging and Control of Volatile and Non-Volatile Resistive Switching in VO 2
Control of the metal-insulator phase transition is vital for emerging neuromorphic and memristive technologies. The ability to alter the electrically driven transition between volatile and non-volatile states is particularly important for quantum-materials-based emulation of neurons and synapses. The major challenge of this implementation is to understand and control the nanoscale mechanisms behind these two fundamental switching modalities. In this study, in situ X-ray nanoimaging is used to follow the evolution of the nanostructure and disorder in the archetypal Mott insulator VO 2 during an electrically driven transition. Our findings demonstrate selective and reversible stabilization of either the insulating or metallic phases achieved by manipulating the defect concentration. This mechanism enables us to alter the local switching response between volatile and persistent regimes and demonstrates a new possibility for nanoscale control of the resistive switching in Mott materials.
36 MATERIALS SCIENCE↗
Prediction of orbital-selective Mott phases and block magnetic states in the quasi-one-dimensional iron chain Ce 2 O 2 FeSe 2 under hole and electron doping
The recent detailed study of quasi-one-dimensional iron-based ladders, with the 3d iron electronic density n=6, has unveiled surprises, such as orbital-selective phases. However, similar studies for n=6 iron chains are still rare. Here a three-orbital electronic Hubbard model was constructed to study the magnetic and electronic properties of the quasi-one-dimensional n=6 iron chain Ce 2 O 2 FeSe 2 , with focus on the effect of doping. Specifically, introducing the Hubbard U and Hund J H couplings and studying the model via the density matrix renormalization group, we report the ground-state phase diagram varying the electronic density away from n=6. For the realistic Hund coupling J H /U=1/4, several electronic phases were obtained, including a metal, orbital-selective Mott, and Mott insulating phases. Doping away from the parent phase, the competition of many tendencies leads to a variety of magnetic states, such as ferromagnetism, as well as several antiferromagnetic and magnetic “block” phases. In the hole-doping region, two different interesting orbital-selective Mott phases were found: OSMP1 (with one localized orbital and two itinerant orbitals) and OSMP2 (with two localized orbitals and one itinerant orbital). Moreover, charge disproportionation phenomena were found in special doping regions. We argue that our predictions can be tested by simple modifications in the original chemical formula of Ce 2 O 2 FeSe 2 .
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Symmetry-breaking polymorphous descriptions for correlated materials without interelectronic U
Correlated materials with open-shell d- and f-ions having degenerate band edge states show a rich variety of interesting properties ranging from metal-insulator transition to unconventional superconductivity. The textbook view for the electronic structure of these materials is that mean-field approaches are inappropriate, as the interelectronic interaction U is required to open a band gap between the occupied and unoccupied degenerate states while retaining symmetry. We show that the latter scenario often defining what Mott insulators are, is in fact not needed for the 3d binary oxides MnO, FeO, CoO, and NiO. The mean-field-like band theory can indeed lift such degeneracies in the binaries when nontrivial unit cell representations (polymorphous networks) are allowed to break symmetries, in conjunction with a recently developed non-empirical exchange and correlation density-functional without an on-site interelectronic interaction U. We explain how density-functional theory (DFT) in the polymorphous representation achieves band gap opening in correlated materials through a separate mechanism to the Mott-Hubbard approach. Here, we show the method predicts magnetic moments and gaps for the four binary monoxides in both the antiferromagnetic and paramagnetic phases, offering an effective alternative to symmetry-conserving approaches for studying a range of functionalities in open d- and f-shell complex materials.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electronic structures, charge transfer, and charge order in twisted transition metal dichalcogenide bilayers
Moiré superlattices of transition metal dichalcogenide (TMD) bilayers have been shown to host correlated electronic states, which arise from the interplay of long wavelength moiré potential and long-range Coulomb interaction. Here, we theoretically investigate structural relaxation and single-particle electronic structure of twisted TMD homobilayer. From the large-scale density functional theory calculation and continuum model with layer degrees of freedom, we find that the out-of-plane gating field creates a tunable charge transfer gap at the Dirac point between the first and second moiré valence bands. We further study the charge orders at the fractional band fillings. In the flat band limit, we find from Monte Carlo simulations a series of charge-ordered insulating states at various fillings $n = \frac{1}{4}, \frac{1}{3}, \frac{1}{2}, \frac{2}{3}, 1$. Further, we predict that gating field induces a phase transition between different electron crystals at fixed filling $n = \frac{1}{2}$ or $\frac{2}{3}$. At half-filling $\textit{n} = 1$, the ground state is a Mott insulator with electronically driven ferroelectricity. This work demonstrates that TMD homobilayer provides a powerful platform for the investigation of tunable charge transfer insulator and charge orders.
36 MATERIALS SCIENCE↗
Doped moiré magnets: Renormalized flat bands and excitonic phases
Here, we explore the phase diagram of a twisted bilayer of strongly interacting electrons on a honeycomb lattice close to half filling using the slave-boson mean-field theory. Our analysis indicates that a variety of new phases can be realized as a function of chemical doping and twist angle. In particular, we find a nonmagnetic excitonic insulating phase that breaks the translational symmetry of the underlying moiré pattern. This phase results from the interplay of strong Coulomb interactions and the twist angle. In addition, we show that the features of the renormalized dispersion, such as the magic angles, depend significantly on the interactions. Our results highlight the rich physics arising in doped moiré superlattices of Mott insulators.
flat bands↗
Resistivity phase diagram of cuprates revisited
The phase diagram of the cuprate superconductors has posed a formidable scientific challenge for more than three decades. This challenge is perhaps best exemplified by the need to understand the normal-state charge transport as the system evolves from Mott insulator to Fermi- liquid metal with doping. Here in this paper, we report a detailed analysis of the temperature (T) and doping (p) dependence of the planar resistivity of simple-tetragonal HgBa 2 CuO 4+δ (Hg1201), the single- CuO 2 -layer cuprate with the highest optimal superconducting transition temperature, T c . The data allow us to test a recently proposed phenomenological model for the cuprate phase diagram that combines a universal transport scattering rate with spatially inhomogeneous (de)localization of the Mott-localized hole. We find that the model provides a good description of the data. We then extend this analysis to prior transport results for several other cuprates, including the Hall number in the overdoped part of the phase diagram, and find little compound-to-compound variation in (de)localization gap scale. The results point to a robust, universal structural origin of the inherent gap inhomogeneity that is unrelated to doping-related disorder. They are inconsistent with the notion that much of the phase diagram is controlled by a quantum critical point, and instead indicate that the unusual electronic properties exhibited by the cuprates are fundamentally related to strong nonlinearities associated with subtle nanoscale inhomogeneity.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Spatiotemporal characterization of the field-induced insulator-to-metal transition
Watching a metal filament grow Resistive switching is a process in which the electrical resistance of a sample changes abruptly in response to a voltage pulse, often by orders of magnitude. This process is at the heart of many neuromorphic computing approaches but visualizing it in both space and time is tricky. del Valle et al . monitored the resistive switching in three different vanadium oxide compounds by measuring time- and space-resolved optical reflectivity (see the Perspective by Hilgenkamp and Gao). A characteristic conducting filament was quickly nucleated on the inhomogeneities in the sample and then propagated due to Joule heating. —JS
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