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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Monolithic microwave integrated circuit devices for active array antennas

Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

Mittra, R.↗
NASA NTRS1983

A Ka-band GaAs monolithic phase shifter

The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.

Sokolov, V.↗
NASA NTRS1983

A three-stage power amplifier for a 20 GHz monolithic transmit module

Design, fabrication, and test results of a three-stage GaAs monolithic power amplifier covering the 17.7 to 20.2 GHz band are described. Intermediate results for single and two-stage amplifiers are also presented. The 1.5 x 3.1 millimeter three-stage amplifier chip has 15 dB gain from 16.5 to 20.2 GHz. Measured saturated output power is between +20 and +21 dBm with improvement expected from minor circuit and device changes.

Petersen, W. C.↗
NASA NTRS1982

Effects of indirect bandgap top cells in a monolithic cascade cell structure

The effect of having a slightly indirect top cell in a three junction cascade monolithic stack is calculated. The minority carrier continuity equations are utilized to calculate individual junction performance. Absorption coefficient curves for general III-V compounds are calculated for a variety of direct and indirect gap materials. The results indicate that for a small excursion into the indirect region, (about 0.1 eV), the loss of efficiency is acceptably small (less than 2.5 percent) and considerably less than attempting to make the top junction a smaller direct bandgap.

Curtis, H. B.↗
NASA NTRS1984

Microwave monolithic integrated circuit development for future spaceborne phased array antennas

The development of fully monolithic gallium arsenide (GaAs) receive and transmit modules suitable for phased array antenna applications in the 30/20 gigahertz bands is presented. Specifications and various design approaches to achieve the design goals are described. Initial design and performance of submodules and associated active and passive components are presented. A tradeoff study summary is presented, highlighting the advantages of a distributed amplifier approach compared to the conventional single power source designs. Previously announced in STAR as N84-13399

Anzic, G.↗
NASA NTRS1984

0.5 W 2-21 GHz monolithic GaAs distributed amplifier

A novel circuit concept to reduce the gate loss using series capacitors on the gate feeding lines has been implemented for a distributed amplifier design. It has significantly increased the gate width of the amplifier with a resultant increase of the broadband output power and efficiency. A monolithic GaAs distributed amplifier using 6 x 300-micron FETs has achieved a record output power of 0.5 W over the 2 to 21 GHz frequency band with at least 4 dB gain. The power-added efficiency was 14 percent. The linear gain was 5 plus or minus 1 dB over the same frequency band.

Kim, B.↗
NASA NTRS1984

Configuration study for a 30 GHz monolithic receive array: Technical assessment

The current status of monolithic microwave integrated circuits (MMICs) in phased array feeds is discussed from the point of view of cost performance, reliability, and design considerations. Transitions to MMICs, compatible antenna radiating elements and reliability considerations are addressed. Hybrid antennas, feed array antenna technology, and offset reflectors versus phased arrays are examined.

Nester, W. H.↗
NASA NTRS1984

Configuration study for a 30 GHz monolithic receive array, volume 2

The formalism of the sidelobe suppression algorithm and the method used to calculate the system noise figure for a 30 GHz monolithic receive array are presented. Results of array element weight determination and performance studies of a Gregorian aperture image system are also given.

Nester, W. H.↗
NASA NTRS1983

Monolithic short wave infrared (SWIR) detector array

A monolithic self-scanned linear detector array was developed for remote sensing in the 1.1- 2.4-micron spectral region. A high-density IRCCD test chip was fabricated to verify new design approaches required for the detector array. The driving factors in the Schottky barrier IRCCD (Pdsub2Si) process development are the attainment of detector yield, uniformity, adequate quantum efficiency, and lowest possible dark current consistent with radiometric accuracy. A dual-band module was designed that consists of two linear detector arrays. The sensor architecture places the floating diffusion output structure in the middle of the chip, away from the butt edges. A focal plane package was conceptualized and includes a polycrystalline silicon substrate carrying a two-layer, thick-film interconnecting conductor pattern and five epoxy-mounted modules. A polycrystalline silicon cover encloses the modules and bond wires, and serves as a radiation and EMI shield, thermal conductor, and contamination seal.

Source record↗
NASA NTRS1984

Monolithically integrated array of GaAlAs electroabsorption modulators

The operation of an eight-element monolithic array of GaAlAs electroabsorption modulators has been demonstrated. The single-mode waveguide modulators are implemented in a reverse-biased p-pi-n heterojunction configuration, with center-to-center spacing of 9 microns between adjacent channels. This device may be useful for intensity modulation in high (spatial) resolution applications.

Robinson, D. L.↗
NASA NTRS1984

Recent developments in monolithic phase-locked semiconductor laser arrays

Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 Watts CW emitted power and less than 1 deg far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements.

Katz, J.↗
NASA NTRS1983

Monolithic lead salt-silicon focal plane development

This paper is a summary of work done in the development of monolithic lead salt-silicon infrared focal plane technology. The photoconductive detector materials, PbS and PbSe are chemically deposited onto premetallized silicon MOSFET integrated circuit wafers. A variety of structures based on an implanted PMOS process were fabricated and evaluated. Operational results of an eight-element PbS array multiplexed on-chip are presented along with radiometric measurements on other integrated PbS-silicon MOSFET structures. PbS imagery is shown using one element of a 20-element array integrated on-chip.

Barrett, J. R.↗
NASA NTRS1984

Recent developments in monolithic phase-locked semiconductor laser arrays

Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 watts CW emitted power and less than 1 deg far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements.

Katz, J.↗
NASA NTRS1986

Monolithic 20-GHz Transmitting Module

20-GHz monolithic microwave/millimeter-wave integrated circuit (MMIC) with amplification and phase-shift (time-delay) capabilities developed. Use of MMIC module technology promises to make feasible development of weight- and cost-effective phased-array antenna systems, identified as major factor in achieving minimum cost and efficient use of frequency and orbital resources of future generations of communication satellite systems. Use of MMIC transmitting modules provides for relatively simple method for phase-shift control of many separate radio-frequency (RF) signals required for phased-array antenna systems.

Kascak, T.↗
NASA NTRS1985

Monolithic cascade-type solar cells

Solar cells consist of a semiconductor base, a bottom cell with a band-gap energy of E1, and a top cell with a band-gap energy of E2, and 0.96 E1 1.36 eV and (0.80 E + 0.77) eV E2 (0.80 E1 + 0.92) eV. A monolithic cascade-type solar cell was prepared with an n(+)-type GaAs base, a GaInAs bottom solar cell, and a GaAiInAs top solar cell. The surface of the cell is coated with a SiO antireflection film. The efficiency of the cell is 32%.

Yamamoto, S.↗
NASA NTRS1986

Optically controlled phased array antenna concepts using GaAs monolithic microwave integrated circuits

The desire for rapid beam reconfigurability and steering has led to the exploration of new techniques. Optical techniques have been suggested as potential candidates for implementing these needs. Candidates generally fall into one of two areas: those using fiber optic Beam Forming Networks (BFNs) and those using optically processed BFNs. Both techniques utilize GaAs Monolithic Microwave Integrated Circuits (MMICs) in the BFN, but the role of the MMIC for providing phase and amplitude variations is largely eliminated by some new optical processing techniques. This paper discusses these two types of optical BFN designs and provides conceptual designs of both systems.

Kunath, R. R.↗
NASA NTRS1985

Dual-band microstrip antennas with monolithic reactive loading

The design and experimental measurement of a dual-band, monolithic microstrip antenna is presented. The structure utilises a short-circuited length of microstrip transmission line to provide reactive loading and, thereby, retains the low-profile characteristic of a normal microstrip patch radiator.

Davidson, S. E.↗
NASA NTRS1986

Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity monolithic loss modulator

Active Q switching in a GaAs/AlGaAs multiquantum well laser with an intracavity electroabsorption monolithic loss modulator is demonstrated. In this device, an efficient loss modulation is achieved through the quantum confined Stark effect in a modulator section and the enhanced carrier induced band shrinkage effect in an optical amplifier section. It is found that a picosecond pulse as narrow as 18.6 ps full width at half-maximum is generated and a high repetition rate of more than 3 GHz is obtained.

Arakawa, Y.↗