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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Yuma Border Patrol Lighting Retrofit: Final LED System Performance Assessment of Trial and Full Installation

Along the Yuma Sector Border Patrol Area in Yuma, Arizona, the GATEWAY program conducted a trial evaluation in which the incumbent quartz metal halide area lighting was replaced with LED at three pole locations, and illuminance measurements were recorded initially and at 2500 hours, 5000 hours, 7000, and 11,000 hours of operation. Additionally, four second-generation LED luminaires installed as part of the full installation were evaluated initially and again after 4,000 hours of operation. While the initial energy, lighting quality, and maintenance benefits relative to the incumbent high-pressure sodium system were very satisfactory, the study raises important questions regarding the long-term performance of LED lighting systems in high-temperature environments.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2019

Evaluating Tunable Lighting in Classrooms: Trial LED lighting systems in three classrooms in the Folsom Cordova Unified School District (Supplemental Report)

This report summarizes the results from a trial installation of light-emitting diode (LED) lighting systems installed in three classrooms at Gold Ridge Elementary (GRE) School in the Folsom Cordova Unified School District (FCUSD) in Folsom, CA. FCUSD asked the Sacramento Utility District (SMUD) to help them explore potential benefits of tunable-white lighting systems for children with Autism Spectrum Disorder (ASD). SMUD responded by implementing a research project and invited Pacific Northwest National Laboratory (PNNL) to document the performance of the LED lighting systems as part of a GATEWAY evaluation. SMUD and FCUSD staff coordinated and completed the design and installation of the LED systems, and coordinated the collection of data from teachers, students, and parents, while PNNL evaluated the energy and photometric performance of the systems.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

End-Use Savings Shapes Measure Documentation: LED Lighting

Building on the successfully completed effort to calibrate and validate the U.S. Department of Energy's ResStock and ComStock models over the past three years, the objective of this work is to produce national data sets that empower analysts working for federal, state, utility, city, and manufacturer stakeholders to answer a broad range of analysis questions. The goal of this work is to develop energy efficiency, electrification, and demand flexibility end-use load shapes (electricity, gas, propane, or fuel oil) that cover a majority of the high-impact, market-ready (or nearly market-ready) measures. "Measures" refers to energy efficiency variables that can be applied to buildings during modeling. An end-use savings shape is the difference in energy consumption between a baseline building and a building with an energy efficiency, electrification, or demand flexibility measure applied. It results in a timeseries profile that is broken down by end use and fuel (electricity or on-site gas, propane, or fuel oil use) at each timestep. ComStock is a highly granular, bottom-up model that uses multiple data sources, statistical sampling methods, and advanced building energy simulations to estimate the annual subhourly energy consumption of the commercial building stock across the United States. The baseline model intends to represent the U.S. commercial building stock as it existed in 2018. The methodology and results of the baseline model are discussed in the final technical report of the End-Use Load Profiles project. This documentation focuses on a single end-use savings shape measure - LED lighting. The LED lighting measure replaces interior lights with LEDs where applicable. The measure resulted in 1.25 TBtu energy savings across the building stock, with the majority of savings occurring in retail and warehouse buildings.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2015

R&D100: LED Pulser

A Sandia National Laboratories' light emitting diode (LED) driver is generating light pulses with shorter duration higher repetition frequency and higher brightness than anything on the market. The Sandia LED Pulser uses custom electronic circuitry to drive high-power LEDs to generate short, bright, high frequency light pulses. A single device can emit up to four different colors - each with independent pulse timing - crucial for light-beam forming in many optical applications and is more economical than current light sources such as lasers.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Controlled High Filler Loading of Functionalized Al{sub 2}O{sub 3}-Filled Epoxy Composites for LED Thermal Management

Thermal management in light-emitting diode (LED) has been extensively researched recently. This study is intended to develop an effective thermally conductive epoxy composite as thermal interface material (TIM) for headlamp LEDs. Silane-functionalized aluminum oxide (Al{sub 2}O{sub 3}) powder of different average particle sizes (44 and 10 µm) was studied for its feasibility as filler at its maximum loading. A detailed comparison of three different methods of particle dispersions, hand-mix, speed-mix and calendaring process (3-roll mill), has been reported. The dispersion of Al{sub 2}O{sub 3} particles, the thermal conductivity and thermal degradation characteristics of the composites were investigated and explained in detail. At 75 wt.% filler loading, 10 and 44 µm Al{sub 2}O{sub 3} achieved composite thermal conductivities of 1.13 and 2.08 W/mK, respectively, which is approximately 528 and 1055% of enhancement with respect to neat epoxy. The package-level thermal performance of the LED employing the Al{sub 2}O{sub 3}-filled TIMs was carried out using thermal transient analysis. The experimental junction-to-ambient thermal resistances (R{sub thJ-A}) achieved were 6.65, 7.24, and 8.63 K/W for Al{sub 2}O{sub 3-44µm}, Al{sub 2}O{sub 3-10µm} and neat epoxy, respectively. The results revealed that the Al{sub 2}O{sub 3-44µm} fillers-filled composite performed better in both material-level and package-level thermal characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Feedback-Controlled LED Photobioreactor for Photophysiological Studies of Cyanobacteria

A custom photobioreactor (PBR) was designed to enable automatic light adjustments using computerized feedback control. A black anodized aluminum enclosure, constructed to surround the borosilicate reactor vessel, prevents the transmission of ambient light and serves as a mount for arrays of light-emitting diodes (LEDs). The high-output LEDs provide narrow-band light of either 630 or 680 nm for preferential excitation of the cyanobacterial light-harvesting pigments, phycobilin or chlorophyll a, respectively. Custom developed software BioLume provides automatic control of optical properties and a computer feedback loop can automatically adjust the incident irradiance as necessary to maintain a fixed transmitted light through the culture, based on user-determined set points. This feedback control serves to compensate for culture dynamics which have optical effects, (e.g., changing cell density, pigment adaptations) and thus can determine the appropriate light conditions for physiological comparisons or to cultivate light-sensitive strains, without prior analyses. The LED PBR may also be controlled as a turbidostat, using a feedback loop to continuously adjust the rate of media-dilution based on the transmitted light measurements, with a fast and precise response. This cultivation system gains further merit as a high-performance analytical device, using non-invasive tools (e.g., dissolved gas sensors, online mass spectrometry) to automate real-time measurements, thus permitting unsupervised experiments to search for optimal growth conditions, to monitor physiological responses to perturbations, as well as to quantitate photophysiological parameters using an in situ light-saturation response routine.

controlled cultivation↗
DOE OSTI2013

The photocatalysis of Bi{sub 2}MoO{sub 6} under the irradiation of blue LED

Graphical abstract: - Highlights: • ·OH trap and hole sink were involved to investigate the active radicals. • Holes play a more important role in the degradation of RhB. • The ·OH were related to the decomposition of phenol. • The ·O{sub 2}-played a leading role in the photodegradation of phenol. • Blue LED is competitive and promising alternative for the future application. - Abstract: Bi{sub 2}MoO{sub 6} has been reported as a promising photocatalyst in wastewater treatment. The active radicals generated over the Bi{sub 2}MoO{sub 6} during the photocatalytic process were thought to be hydroxyl radical (·OH) but have not been proved. Herein, Bi{sub 2}MoO{sub 6} with nanoplate like morphology was synthesized and its photocatalytic performances in the degradation of rhodamine B (RhB) and phenol as colored and colorless model pollutants respectively were evaluated under the irradiation of blue light emitting diode (LED). The tert-butyl alcohol (TBA) as a ·OH trap and ethylene diamine tetraacetic acid (EDTA) as a hole sink were involved to investigate the main active groups that are generated on Bi{sub 2}MoO{sub 6} and function during the photodegradation of RhB and phenol. In addition, it is a competitive and promising alternative plan to use blue LED as light source for the future practical application in environmental remediation.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Eu{sup 2+}, Mn{sup 2+} co-doped Ba{sub 9}Y{sub 2}Si{sub 6}O{sub 24} phosphors based on near-UV-excitable LED lights

Graphical abstract: - Highlights: • New near-ultraviolet (NUV)-excitable materials composed of Ba{sub 9}Eu{sub m}Mn{sub n}Y{sub 2}Si{sub 6}O{sub 24} (m = 0.01–0.5, n = 0–0.7) were prepared. • High energy-transfer from Eu{sup 2+} to Mn{sup 2+} and their energy-transfer mechanism were discussed. • The co-doping of Eu{sup 2+} and Mn{sup 2+} in the orthosilicate structure resulted in the emission of white light under NUV LED light. - Abstract: New single-phase and near-ultraviolet (NUV)-excitable materials composed of Ba{sub 9}Eu{sub m}Mn{sub n}Y{sub 2}Si{sub 6}O{sub 24} (m = 0.01–0.5, n = 0–0.7) were prepared via a solid-state reaction in reducing atmosphere. X-ray diffraction patterns of the obtained phosphors were examined to index the peak positions. After doping the host structure with Eu{sup 2+} and Mn{sup 2+} emitters, the intense green, white, and orange emission lights that were observed in the photoluminescence spectra under NUV excitation were monitored. The dependence of the luminescent intensity of the Mn{sup 2+} co-doped (n = 0.1–0.7) host lattices on the fixed Eu{sup 2+} content (m = 0.1, 0.3, 0.5) is also investigated. Co-doping Mn{sup 2+} into the Eu{sup 2+}-doped host structure enabled a high energy-transfer from Eu{sup 2+} to Mn{sup 2+} and their energy-transfer mechanism were discussed. Using these phosphors, the desired CIE values including emissions throughout the green to orange regions of the spectra were achieved. Efficient white-light light-emitting diodes (LEDs) were fabricated using Eu{sup 2+} and Mn{sup 2+} co-doped phosphors based on NUV-excitable LED lights.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Photoluminescence studies of high-efficient red-emitting K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} phosphor for NUV LED

Highlights: • Novel K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} red phosphors were prepared by solid-state method. • Phosphors exhibit strong red light under NUV excitation with quantum efficiency of 70.5 %. • Judd–Ofelt analysis ascertains the presence of Eu{sup 3+} in a highly asymmetric environment. • The red LED prototype was fabricated with KYWP:Eu{sup 3+} phosphor and InGaN chip. - Abstract: A series of high-efficient red-emitting phosphors K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} have been successfully synthesized by conventional solid-state reaction, and its photoluminescence (PL) properties have been investigated. The phosphors can be excited efficiently by NUV light, then exhibit strong red emission with quantum efficiency of 70.5%. The concentration quenching takes place at relatively high concentration of Eu{sup 3+} (x = 0.70), which is further confirmed by the variation of decay curves of the entitled phosphors. Judd–Ofelt analysis ascertains the presence of Eu{sup 3+} in a highly asymmetric environment. The phosphor exhibits good thermal stability (92.5% at 100 °C and 84.1% at 180 °C). The red LED prototype fabricated by opyimized-composition K{sub 2}Y(WO{sub 4})(PO{sub 4}):0.70Eu{sup 3+} phosphor and 395 nm-emitting InGaN chips exhibit bright red emission. The results indicate that the K{sub 2}Y(WO{sub 4})(PO{sub 4}):Eu{sup 3+} phosphors are promising red phosphors for NUV LED.

36 MATERIALS SCIENCE↗
DOE OSTI2016

A single-phase Ba{sub 9}Lu{sub 2}Si{sub 6}O{sub 24}:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} phosphor with tunable full-color emission for NUV-based white LED applications

Highlights: • A single phase Ba{sub 9}Lu{sub 2}Si{sub 6}O{sub 24}:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} phosphor with full-color emission was obtained by solid-state reactions. • Eu{sup 2+}, Ce{sup 3+}, and Mn{sup 2+} acts as blue, green, and red luminescence centers, respectively. • The BLS:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} phosphor shows a high quantum efficient of ∼62% and a good color stability. • Combining this single phosphor with a 395 nm NUV-chip, an ideal white LED with a high CRI of 85 and a CCT of 6300 K was obtained. - Abstract: We obtained a single phase BLS:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} phosphor by solid-state reactions. Eu{sup 2+}, Ce{sup 3+}, and Mn{sup 2+} gives rise to the blue, green, and red emission, respectively. The Mn{sup 2+} red emission can be effectively enhanced via energy transfers from both Eu{sup 2+} and Ce{sup 3+}. Thus a tunable full color emission from 410 to 750 nm was realized in this single phosphor. The Eu{sup 2+} → Mn{sup 2+} energy transfer mechanism was investigated by the fluorescence decay curves. This single phosphor exhibits an efficient excitation band covering from 390 to 410 nm, which matches well with the emission light of the efficient NUV chips. The optimized BLS:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} phosphor shows a high quantum efficient of ∼62% and a good color stability. When this single phosphor was combined with a 395 nm NUV-chip, an ideal white LED with a high color render index (CRI) of 85 and a correlated color temperature (CCT) of 6300 K was obtained. This demonstrates the promising application of the BLS:Eu{sup 2+}, Ce{sup 3+}, Mn{sup 2+} single phosphor for the NUV-based white LEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2018

White LED based on CsPbBr3 nanocrystal phosphors via a facile two-step solution synthesis route

Highlights: • The work shows a simple and effective strategy to synthesize perovskite materials. • A LED with CsPbBr{sub 3} nanocrystals as green phosphors was fabricated. • Notable stability of the CsPbBr{sub 3} nanocrystals was verified. - Abstract: All-inorganic CsPbBr{sub 3} perovskite nanocrystals with mean size of ∼300 nm were synthesized via a facile two-step solution synthesis route. High-resolution transmission electron microscopy and X-ray diffraction characterizations confirm the as-prepared CsPbBr{sub 3} nanoparticles are single-crystals with good crystallinity, although a CsPb{sub 2}Br{sub 5} impure phase also exists in the final product. Power-/temperature-dependent and time-resolved photoluminescence measurements reveal the notable and stable excitonic emission feature of these CsPbBr{sub 3} nanocrystals. As a proof-of-concept demonstration, a LED with p-GaN/n-ZnO heterojunction as blue-violet excitation chip and CsPbBr{sub 3} nanocrystals as green phosphors, was fabricated and a white electroluminescence was achieved from this perovskite nanocrystals decorated LED.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Transforming E-Waste Into Strategic Resources: Techno-Economic Analysis of Gallium and By-products Recovery from LEDs via Bioleaching

The growing demand for gallium in optoelectronics and renewable energy applications raises concerns about supply security and production sustainability. This study evaluates the techno-economic feasibility of recovering gallium and by-products (copper and nickel) from waste GaN-based LEDs via bioleaching. A process flowsheet encompassing transportation, robotic disassembly, ball milling, bioleaching, solvent extraction/electrowinning, and refining was modeled. Based on mass balance analysis, more than 53 tons of LED waste are required annually to yield 1 kg of gallium alongside substantial copper and nickel co-products. Preliminary techno-economic analysis (TEA) shows an average total cost (ATC) of 6.84 USD/kg metal when costs are allocated by mass-weighted economic value (market price) fraction, corresponding to 6.75 USD/kg for copper, 15.91 USD/kg for nickel, and 470.95 USD/kg for gallium. For gallium, direct operational costs account for more than 70% of the cost. Monte Carlo simulations further quantify cost uncertainties under market price fluctuations. This work represents the first TEA of gallium recovery from GaN-based LEDs and highlights potential pathways for future cost reduction.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A New Type of Hybrid Copper Iodide as Nontoxic and Ultrastable LED Emissive Layer Material

Perovskite-based light-emitting diodes (PeLEDs) are promising candidates for next-generation solid-state lighting and display technologies. However, all current high-performance PeLEDs contain a toxic element (lead) and suffer from relatively low stability. Herein, we report a new type of lead-free LED using low-cost, eco-friendly, and robust copper(I) iodide hybrid material as the emissive layer (EML). Specifically, they are composed of copper iodide chains and organic ligands through ionic and coordinate bonds. Their remarkable stability and solution processability stem from this unique multifold bonding feature. High-quality thin films of 1D-Cu 4 I 6 (bttmp) 2 were fabricated by a simple, one-step spin-coating process. They exhibit high photoluminescence quantum yield (91%) and long-term air stability (>2000 h). An EQE of 5.02% was achieved for a prototype yellow LED using 1D-Cu 4 I 6 (bttmp) 2 EML. Its half-lifetime of 35.5 h obtained in open air outperforms that of most PeLEDs reported to date. Finally, this work opens a new direction for making LEDs based on ecofriendly and robust hybrid materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence

By quantum confining GaN at monolayer thickness with AlN barriers inside of a nanowire, deep ultraviolet LEDs are demonstrated. Full three-dimensional strain dependent energy band simulations are carried out within multiple quantum disk (MQD) GaN/AlN nanowire superlattice heterostructures. It is found that, even within the same nanowire MQD, the emission energy of the ultrathin GaN QDs varies from disk to disk due to the changing strain distribution and polarization charge induced energy band bending along the axial nanowire direction. MQD heterostructures are grown by plasma-assisted molecular beam epitaxy to form self-assembled catalyst-free nanowires with 1 to 2 monolayer thick GaN insertions within an AlN matrix. Photoluminescence peaks are observed at 295 nm and 283 nm from the 2 ML and 1 ML thick MQD samples, respectively. Polarization-doped nanowire LEDs are grown incorporating 1 ML thick GaN MQD active regions from which we observe deep ultraviolet electroluminescence. As a result, the shortest LED wavelength peak observed is 240 nm and attributed to electron hole recombination within 1 ML thick GaN QDs.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Degradation and corresponding failure mechanism for GaN-based LEDs

The degradation behaviors of high power GaN-based vertical blue LEDs on Si substrates were measured using in-situ accelerated life test. The results show that the dominant failure mechanism would be different during the operation. Besides that, the corresponding associated failure mechanisms were investigated systematically by using different analysis technologies, such as Scan Electron Microscopy, Reflectivity spectroscopy, Transient Thermal Analysis, Raman Spectra, etc. It is shown that initially, the failure modes were mainly originated from the semiconductor die and interconnect, while afterwards, the following serious deterioration of the radiant fluxes was attributed to the package. The interface material and quality, such as die attach and frame, play an important role in determining the thermal performance and reliability. In addition, the heating effect during the operation will also release the compressive strain in the chip. These findings will help to improve the reliability of GaN-based LEDs, especially for the LEDs with vertical structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electrical properties of III-Nitride LEDs: Recombination-based injection model and theoretical limits to electrical efficiency and electroluminescent cooling

The current-voltage characteristic and ideality factor of III-Nitride quantum well light-emitting diodes (LEDs) grown on bulk GaN substrates are investigated. At operating temperature, these electrical properties exhibit a simple behavior. A model in which only active-region recombinations have a contribution to the LED current is found to account for experimental results. The limit of LED electrical efficiency is discussed based on the model and on thermodynamic arguments, and implications for electroluminescent cooling are examined.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that can be grown on GaN with high crystalline quality. Since narrower wells operate at a higher carrier density for a given current density, they increase the fraction of carriers lost to Auger recombination and lower the efficiency. The incorporation of boron, a smaller group-III element, into InGaN alloys is a promising method to eliminate the lattice mismatch and realize high-power, high-efficiency visible LEDs with thick active regions. In this work, we apply predictive calculations based on hybrid density functional theory to investigate the thermodynamic, structural, and electronic properties of BInGaN alloys. Our results show that BInGaN alloys with a B:In ratio of 2:3 are better lattice matched to GaN compared to InGaN and, for indium fractions less than 0.2, nearly lattice matched. Deviations from Vegard's law appear as bowing of the in-plane lattice constant with respect to composition. Our thermodynamics calculations demonstrate that the solubility of boron is higher in InGaN than in pure GaN. Varying the Ga mole fraction while keeping the B:In ratio constant enables the adjustment of the (direct) gap in the 1.75–3.39 eV range, which covers the entire visible spectrum. Holes are strongly localized in non-bonded N 2p states caused by local bond planarization near boron atoms. Furthermore, our results indicate that BInGaN alloys are promising for fabricating nitride heterostructures with thick active regions for high-power, high-efficiency LEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs

By studying low radiative efficiency blue III-nitride light emitting diodes (LEDs), we find that the ABC model of recombination commonly used for understanding efficiency behavior in LEDs is insufficient and that additional effects should be taken into account. We propose a modification to the standard recombination model by incorporating a bimolecular nonradiative term. The modified model is shown to be in much better agreement with the radiative efficiency data and to be more consistent than the conventional model with very short carrier lifetimes measured by time-resolved photoluminescence in similar, low radiative efficiency material. Here, we present experimental evidence that a hot carrier-generating process is occurring within these devices, in the form of measurements of forward photocurrent under forward bias. The forward photocurrent, due to hot carrier generation in the active region, is present despite the lack of any "efficiency droop"-the usual signature of band-to-band Auger recombination in high-quality III-nitride LEDs. Hot carrier generation in the absence of band-to-band Auger recombination implies that some other source of hot carriers exists within these low radiative efficiency devices, such as trap-assisted Auger recombination.

36 MATERIALS SCIENCE↗