Automated ion implantation for IC's
Report discusses automated ion-implantation facility under development at Marshall Space Flight Center. Facility will produce ultra-reliable IC's with minimal human intervention.
Kennedy, B. W.↗
SEARCH · Engineering Papers
Results for “ION IMPLANTATION”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Low-cost ion implantation and annealing technology for solar cells
Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.
Kirkpatrick, A. H.↗
Synthesis of Fe 16 N 2 compound Free-Standing Foils with 20 MGOe Magnetic Energy Product by Nitrogen Ion-Implantation
Rare-earth-free magnets are highly demanded by clean and renewable energy industries because of the supply constraints and environmental issues. A promising permanent magnet should possess high remanent magnetic flux density (Br), large coercivity (Hc) and hence large maximum magnetic energy product ((BH)max). Fe 16 N 2 has been emerging as one of promising candidates because of the redundancy of Fe and N on the earth, its large magnetocrystalline anisotropy (Ku>1.0×107 erg/cc), and large saturation magnetization (4πMs>2.4T). However, there is no report on the formation of Fe 16 N 2 magnet with high Br and large Hc in bulk format before. In this paper, we successfully synthesize freestanding Fe 16 N 2 foils with a coercivity of up to 1910Oe and a magnetic energy product of up to 20 MGOe at room temperature. Nitrogen ion implantation is used as an alternative nitriding approach with the benefit of tunable implantation energy and fluence. An integrated synthesis technique is developed, including a direct foil-substrate bonding step, an ion implantation step and a two-step post-annealing process. With the tunable capability of the ion implantation fluence and energy, a microstructure with grain size 25–30nm is constructed on the FeN foil sample with the implantation fluence of 5×10 17 /cm 2 .
36 MATERIALS SCIENCE↗
Nanoscale lattice strains in self-ion implanted tungsten
Developing a comprehensive understanding of the modification of material properties by neutron irradiation is important for the design of future fission and fusion power reactors. Self-ion implantation is commonly used to mimic neutron irradiation damage, however an interesting question concerns the effect of ion energy on the resulting damage structures. The reduction in the thickness of the implanted layer as the implantation energy is reduced results in the significant quandary: Does one attempt to match the primary knock-on atom energy produced during neutron irradiation or implant at a much higher energy, such that a thicker damage layer is produced? In this work, we address this question by measuring the full strain tensor for two ion implantation energies, 2 MeV and 20 MeV in self-ion implanted tungsten, a critical material for the first wall and divertor of fusion reactors. A comparison of 2 MeV and 20 MeV implanted samples is shown to result in similar lattice swelling. Multi-reflection Bragg coherent diffractive imaging (MBCDI) shows that implantation induced strain is in fact heterogeneous at the nanoscale, suggesting that there is a non-uniform distribution of defects, an observation that is not fully captured by micro-beam Laue diffraction. At the surface, MBCDI and high-resolution electron back-scattered diffraction (HR-EBSD) strain measurements agree quite well in terms of this clustering/non-uniformity of the strain distribution. However, MBCDI reveals that the heterogeneity at greater depths in the sample is much larger than at the surface. This combination of techniques provides a powerful method for detailed investigation of the microstructural damage caused by ion bombardment, and more generally of strain related phenomena in micro-volumes that are inaccessible via any other technique.
36 MATERIALS SCIENCE↗
Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications
Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two-step process: a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device-relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area, high quality, and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device-relevant substrates. A well-controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C-atoms (1 monolayer ~4 × 10 15 C-atoms/cm 2 ). Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized. The layer-selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.
36 MATERIALS SCIENCE↗
Cryogenic ion implantation near amorphization threshold dose for halo/extension junction improvement in sub-30 nm device technologies
We report on junction advantages of cryogenic ion implantation with medium current implanters. We propose a methodical approach on maximizing cryogenic effects on junction characteristics near the amorphization threshold doses that are typically used for halo implants for sub-30 nm technologies. BF{sub 2}{sup +} implant at a dose of 8 Multiplication-Sign 10{sup 13}cm{sup -2} does not amorphize silicon at room temperature. When implanted at -100 Degree-Sign C, it forms a 30 - 35 nm thick amorphous layer. The cryogenic BF{sub 2}{sup +} implant significantly reduces the depth of the boron distribution, both as-implanted and after anneals, which improves short channel rolloff characteristics. It also creates a shallower n{sup +}-p junction by steepening profiles of arsenic that is subsequently implanted in the surface region. We demonstrate effects of implant sequences, germanium preamorphization, indium and carbon co-implants for extension/halo process integration. When applied to sequences such as Ge+As+C+In+BF{sub 2}{sup +}, the cryogenic implants at -100 Degree-Sign C enable removal of Ge preamorphization, and form more active n{sup +}-p junctions and steeper B and In halo profiles than sequences at room temperature.
36 MATERIALS SCIENCE↗
Application of nitrogen plasma immersion ion implantation to titanium nasal implants with nanonetwork surface structure
In nasal reconstruction, the response of cells to titanium (Ti) implants is mainly determined by surface features of the implant. In a pilot study, the authors applied electrochemical anodization to Ti surfaces in an alkaline solution to create a network of nanoscale surface structures. This nanonetwork was intended to enhance the responses of primary human nasal epithelial cell (HNEpC) to the Ti surface. In this study, the authors then treated the anodized, nanonetwork-structured Ti surface using nitrogen plasma immersion ion implantation (NPIII) in order to further improve the HNEpC response to the Ti surface. Subsequently, surface characterization was performed to elucidate morphology, roughness, wettability, and chemistry of specimens. Cytotoxicity, blood, and HNEpC responses were also evaluated. Our results demonstrate that NPIII treatment led to the formation of a noncytotoxic TiN-containing thin film (thickness <100 nm) on the electrochemically anodized Ti surface with a nanonetwork-structure. NPIII treatment was shown to improve blood clotting and the adhesion of platelets to the anodized Ti surface as well as the adhesion and proliferation of hNEpC. This research spreads our understanding of the fact that a TiN-containing thin film, produced using NPIII treatment, could be used to improve blood and HNEpC responses to anodized, nanonetwork-structured Ti surfaces in nasal implant applications.
42 ENGINEERING↗
Energy dependence on formation of TiO{sub 2} nanofilms by Ti ion implantation and annealing
Graphical abstract: - Highlights: • Fabrication of TiO{sub 2} films by ion implantation and annealing strongly depends on ion energy. • Best photocatalytic activity is achieved in the TiO{sub 2} nanofilm annealed at 1000 °C. • Phase transformation of TiO{sub 2} appears under annealing temperature of 900 °C. - Abstract: TiO{sub 2} nanofilms were fabricated by a solid-phase-growth progress. The silica glass slides were implanted with Ti ions to the fluence of 1.84 × 10{sup 17} ions/cm{sup 2} at accelerate voltages of 20, 50, and 80 kV, respectively. The samples were annealed in oxygen atmosphere at 700, 800, 900, and 1000 °C for 4 h, respectively. The influence of the ion energy and the annealing temperature on the formation and phase transformation of the TiO{sub 2} films was studied. It was found that anatase TiO{sub 2} nanofilms instead of embedded rutile TiO{sub 2} nanoparticles on the substrate surfaces when the energy of implanted Ti atoms was 20 kV.
36 MATERIALS SCIENCE↗
Observations of Ag diffusion in ion implanted SiC
The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
Development of ion-implantation confined, shallow mesa stripe (Pn,Sn)Te/Pb(Te,Se) DH laser diodes
Preliminary results of a program to develop ion implantation confined, shallow mesa stripe (Pb,Sn)Te laser diodes are presented. The practicality of using a shallow mesa stripe to produce single mode laser output and to increase the single mode tuning range are demonstrated. The first results of p-type ion implantation in the lead-tin salts are also reported. It is shown that sodium and lithium both can be used to convert n-type Pb(Te,Se) to p-type. The implant and anneal procedures are described, and electrical characteristics of Li-implanted layers are presented.
Fonstad, C. G.↗
Orders of magnitude reduction in the thermal conductivity of polycrystalline diamond through carbon, nitrogen, and oxygen ion implantation
Despite the exceptional thermal and mechanical functionalities of diamond, its superlative properties are highly subject to the presence of point defects, dislocations, and interfaces. Here, polycrystalline diamond is ion implanted with C 3+ , N 3+ , and O 3+ ions at an energy of 16.5 MeV, producing an amorphous layer at the projected range and a damaged crystalline region between the surface and amorphous layer. Using time-domain thermoreflectance in combination with thermal penetration depth calculations based upon the multilayer heat diffusion equation, it is determined that reductions in the thermal conductivity can span nearly two orders of magnitude while still maintaining a polycrystalline structure within the regions thermally probed. Dynamical diffraction simulations of high-resolution x-ray diffraction measurements demonstrate the formation of a strained layer localized at the end of range, with much lower levels of strain near the surface. Furthermore, within the polycrystalline region above the amorphous layer, the average number of displacements-per-atom from the ion irradiation is found to be < 1%, with mass impurity concentrations much less than 1%. These low defect concentrations within the thermally probed region demonstrate the remarkably large impact that dilute levels of defects from the ion implantation can have on the thermal conductivity of diamond.
36 MATERIALS SCIENCE↗
Effect of exposure environment on surface decomposition of SiC-silver ion implantation diffusion couples
SiC is a promising material for nuclear applications and is a critical component in the construction of tristructural isotropic (TRISO) fuel. A primary issue with TRISO fuel operation is the observed release of 110m Ag from intact fuel particles. The release of Ag has prompted research efforts to directly measure the transport mechanism of Ag in bulk SiC. Recent research efforts have focused primarily on Ag ion implantation designs. The effect of the thermal exposure system on the ion implantation surface has been investigated. Results indicate the utilization of a mated sample geometry and the establishment of a static thermal exposure environment is critical to maintaining an intact surface for diffusion analysis. In conclusion, the nature of the implantation surface and its potential role in Ag diffusion analysis are discussed.
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DIN 1.7035 Steel Modification with High Intensity Nitrogen Ion Implantation
The paper presents research results on the formation of deep ion-modified layers of the grade DIN 1.7035 alloy steel due to a high intensity, repetitively-pulsed nitrogen ion beams with the ion current density of up to 0.5 А/сm{sup 2}. The formation of a low-energy, high intensity nitrogen ion beam is based on a plasma immersion ion extraction followed by the ballistic focusing in the equipotential drift region. The nitrogen ion implantation in steel specimens is performed at a 1.2 keV energy and 450, 500, 580 and 650°С temperatures during 60 minutes. The morphology, elementary composition and mechanical properties are investigated in deep layers of steel specimens alloyed with nitrogen ions.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Wafer-scale synthesis of multi-layer graphene by high-temperature carbon ion implantation
We report on the synthesis of wafer-scale (4 in. in diameter) high-quality multi-layer graphene using high-temperature carbon ion implantation on thin Ni films on a substrate of SiO{sub 2}/Si. Carbon ions were bombarded at 20 keV and a dose of 1 × 10{sup 15 }cm{sup −2} onto the surface of the Ni/SiO{sub 2}/Si substrate at a temperature of 500 °C. This was followed by high-temperature activation annealing (600–900 °C) to form a sp{sup 2}-bonded honeycomb structure. The effects of post-implantation activation annealing conditions were systematically investigated by micro-Raman spectroscopy and transmission electron microscopy. Carbon ion implantation at elevated temperatures allowed a lower activation annealing temperature for fabricating large-area graphene. Our results indicate that carbon-ion implantation provides a facile and direct route for integrating graphene with Si microelectronics.
36 MATERIALS SCIENCE↗
Magnetic metamaterials by ion-implantation
We present a method for the additive fabrication of planar magnetic nanoarrays with minimal surface roughness. Synthesis is accomplished by combining electron-beam lithography, used to generate nanometric patterned masks, with ion implantation in thin films. By implanting 56 Fe + ions, we are able to introduce magnetic functionality in a controlled manner into continuous Pd thin films, achieving 3D spatial resolution down to a few tens of nanometers. Our results demonstrate the application of this technique in fabricating square artificial spin ice lattices, which exhibit well-defined magnetization textures and interactions among the patterned magnetic elements.
36 MATERIALS SCIENCE↗
Ion temperature and gas pressure effects on the magnetized sheath dynamics during plasma immersion ion implantation
Here, a collisional magnetized plasma with finite ion temperature is considered to examine the effects of the ion temperature and gas pressure on the plasma-sheath dynamics. We use the two-fluid model of plasma-sheath where the nonlinear equations of a dynamic sheath are solved using a full implicit scheme of finite difference method along with some convenient initial and boundary conditions at the plasma center and target. It is found that the ion temperature only has a significant effect on the characteristics of low voltage sheath, while the gas pressure (collision rate) seriously affects the dynamic characteristics of the low and high voltage plasma-sheath. One can see, increasing the ion temperature in low voltage plasma-sheath causes to increase the temporal curve of the ion dose and the ion impact energy on the target, reduces the temporal curve of the sheath width, and has no any effect on the temporal curve of the ion incident angle on the target. However, rising the gas pressure in low and high voltage plasma-sheath reduces all of these temporal curves.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Fabrication and high temperature characteristics of ion-implanted GaAs bipolar transistors and ring-oscillators
Ion implantation techniques that permit the reproducible fabrication of bipolar GaAs integrated circuits are studied. A 15 stage ring oscillator and discrete transistor were characterized between 25 and 400 C. The current gain of the transistor was found to increase slightly with temperature. The diode leakage currents increase with an activation energy of approximately 1 eV and dominate the transistor leakage current 1 sub CEO above 200 C. Present devices fail catastrophically at about 400 C because of Au-metallization.
Doerbeck, F. H.↗
Non-mass-analyzed ion implantation from a solid phosphorus source
A phosphorus ion beam, extracted from a Freeman ion source charged with elemental phosphorus, has been investigated for use in solar cell fabrication. Mass spectroscopy of the beam indicates the absence of both minority-carrier lifetime degrading impurities and hydrogen. The ion beam, without mass analysis, was used for ion implantation of solar cells, and performance for all cells was found to be equivalent to mass-analyzed controls.
Spitzer, M. B.↗