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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Microscale device and method for purification of radiopharmaceuticals

A microfluidic chip device for the purification of radiochemical compounds includes a chip having an injection channel and intersecting branch channels with a plurality of valves are located along the injection channel and branch channels and configured to retain a plug of solution containing the radiochemical compound. The chip further includes a serpentine channel segment (for separation) coupled to the output of the injection channel. A high voltage power source advances the plug of solution through the purification region and into the downstream fraction collection channel. The chip includes a downstream fraction collection channel coupled to the serpentine channel segment and having an optical and radiation detection regions. One or more branch fraction channels intersect with the fraction collection channel and include valves located therein so that the radiochemical compound that is detected using a radiation detector is directed into the desired branch fraction channel for subsequent use.

Van Dam, R. Michael↗
DOE OSTI2022

Characterization of Low Gain Avalanche Detector Prototypes’ Response to Gamma Radiation

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in a single pad configuration, 2 × 2 arrays, and related p-i-n diodes, and exposed to Co-60 sources for study. Devices were fabricated with a range of dopant layer concentrations, and for the arrays, a variety of inter-pad distances and distances from the active area to the edge. Measurements of capacitance versus voltage and leakage current versus voltage have been made to compare pre- and post-irradiation characteristics in gain layer depletion voltage, full bulk depletion voltage, and breakdown voltage. Conclusions are drawn regarding the effects of the gammas on both surface and interface states and on their contribution to acceptor removal through non-ionizing energy loss from Compton electrons or photoelectrons. Comparison of the performances of members of the set of devices can be used to optimize gain layer parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Design and characterization of a phonon-mediated cryogenic particle detector with an eV-scale threshold and 100 keV-scale dynamic range

We present the design and characterization of a cryogenic phonon-sensitive Si detector exploiting the Neganov-Tromov-Luke effect to detect single-charge excitations. This device achieved 2.65(2) eV phonon energy resolution when operated without a voltage bias across the crystal and a corresponding charge resolution of 0.03 electron-hole pairs at 100 V bias. With a continuous-readout data acquisition system and an oine optimum-filter trigger, we obtain a 9.2 eV threshold with a trigger rate of the order of 20 Hz. The detector's energy scale is calibrated up to 120 keV using an energy estimator based on the pulse area. The high performance of this device allows its application to different fields where excellent energy resolution, low threshold, and large dynamic range are required, including dark matter searches, precision measurements of coherent neutrino-nucleus scattering, and ionization yield measurements.

Ren, R↗
DOE OSTI2020

Design and Characterization of a Phonon-Mediated Cryogenic Particle Detector with an eV-Scale Threshold and 100 keV-Scale Dynamic Range

We present the design and characterization of a cryogenic phonon-sensitive Si detector exploiting the Neganov-Trofimov-Luke effect to detect single-charge excitations. This device achieved 2.65(2) eV phonon energy resolution when operated without a voltage bias across the crystal and a corresponding charge resolution of 0.03 electron-hole pairs at 100 V bias. With a continuous-readout data acquisition system and an offline optimum-filter trigger, we obtain a 9.2 eV threshold with a trigger rate of the order of 20 Hz. The detector's energy scale is calibrated up to 120 keV using an energy estimator based on the pulse area. The high performance of this device allows its application to different fields where excellent energy resolution, low threshold, and large dynamic range are required, including dark matter searches, precision measurements of coherent neutrino-nucleus scattering, and ionization yield measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Active Region Extent Assessment with X-rays (AREA-X)

The development of semiconductor sensors for new particle tracking detectors places increasing limits on sensor characteristics such as uniformity, size and shape of inefficient areas and size of active compared to inactive sensor areas. Accurately assessing these relatively subtle effects requires either measurements in particle beams or the modification of samples to be used in dedicated laser test setups. Active Region Extent Assessment with X-rays (AREA-X) has been developed as an alternative method for the fast, efficient and precise study of the active area of a semiconductor sensor. It uses a monochromatic, micro-focused X-ray beam with a 10–20 keV energy range as provided by several synchrotron beam lines and uses the photo current induced in the sensor to measure the depth of the responsive sensor volume. It can be used to study local inhomogeneities or inefficiencies, the overall extent of the active sensor volume and its shape and its localised application, which makes the need to gather statistics over a large area unnecessary, allowing for fast readout, which enables studies of the sensor behaviour at a range of external parameters, e.g. temperature or applied bias voltage. This paper presents the measurement concept and technical setup of the measurement, results from initial measurements as well as capabilities and limitations of the method.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

LGADs (Low-Gain Avalanche Diodes or Detectors) are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the LGAD paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While LGADs are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of LGADs: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to the breakdown voltage. Finally, the signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Fault-tolerant grid frequency measurement algorithm during transients

Many critical electric grid operations rely on accurate grid frequency measurements. Unfortunately, the measurement accuracy can be easily undermined by power system transient faults. During a power system transient fault, the power grid voltages and currents are usually highly distorted by high-frequency components. What is worse, the power grid signals could have discontinuity during some system transient faults such as phase angle jump, and the discontinuity could result in large measurement errors to state-of-the-art grid measurement algorithms. In this study, a fault-tolerant grid frequency measurement algorithm during transients is proposed. The new algorithm consists of two stages. The first stage is a transient detector, and it can detect the occurrence of system transient faults instantaneously. The second stage is the intelligent frequency estimator, and it will adapt its measurements according to the transient detector. The performance of the algorithm is evaluated under different steady-state and transient conditions. Both dependability and security of the fault-tolerant algorithm are assessed by using PSCAD simulation data and IEEE Standard test data.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2026

Identification and mitigation of memory block timing issue in ITk ABCStar during ASIC production

The ABCStar is a mixed-signal front-end readout ASIC for the strips sensor portion of the ATLAS ITk detector being developed as part of the High-Luminosity LHC upgrade. In pre-production testing, a subtle design flaw was uncovered in the ABCStar that was reducing wafer yields in some manufactured lots from the expected 90% to as low as 2%. The root cause was determined to be a timing issue in the logic synthesized to control previously silicon proven memory blocks re-used for this ASIC. The solutions proposed included manufacturing process changes by the wafer foundry, changes to the operating parameters for the ABCStar in the detector, and the possibility that a redesign might be required. The two mitigation efforts were undertaken in parallel, with the process modification route a less desirable solution since already manufactured wafers would need to be scrapped in favour of the new ones. Based on a knowledge of the existing process, and testing done on the worst performing wafers, it was proposed that raising the core operating voltage of the ABCStar from 1.20V to 1.25V could address the timing issue by sufficiently speeding up its transistors. An extensive testing program that included the effects of temperature and radiation expected over the lifetime of the ITk detector was conducted to validate that approach. Those tests and studies proved that even the worst performing wafers would have yields over 80% with the 1.25V core voltage, and neither the modified process nor redesign would be required for ensuring reliable operation of the ITk. Based on testing, a further timing mitigation was implemented to provide an additional margin of reliability by increasing the duty cycle of the clock to the ABCStar. Testing of all ABCStar wafers has been completed and the production of the detector modules using these ASICs is now well underway as a result of the efforts detailed herein.

FOS: Physical sciences↗
DOE OSTI2023

Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current

Solution growth of single-crystal ferroelectric oxide films has long been pursued for the low-cost development of high-performance electronic and optoelectronic devices. However, the established principles of vapor-phase epitaxy cannot be directly applied to solution epitaxy, as the interactions between the substrates and the grown materials in solution are quite different. Here, we report the successful epitaxy of single-domain ferroelectric oxide films on Nb-doped SrTiO 3 single-crystal substrates by solution reaction at a low temperature of ~200 o C. The epitaxy is mainly driven by an electronic polarization screening effect at the interface between the substrates and the as-grown ferroelectric oxide films, which is realized by the electrons from the doped substrates. Atomic-level characterization reveals a nontrivial polarization gradient throughout the films in a long range up to ~500 nm because of a possible structural transition from the monoclinic phase to the tetragonal phase. This polarization gradient generates an extremely high photovoltaic short-circuit current density of ~2.153 mA/cm 2 and open-circuit voltage of ~1.15 V under 375 nm light illumination with power intensity of 500 mW/cm 2 , corresponding to the highest photoresponsivity of ~4.306×10 -3 A/W among all known ferroelectrics. Our results establish a general low-temperature solution route to produce single-crystal gradient films of ferroelectric oxides and thus open the avenue for their broad applications in self-powered photo-detectors, photovoltaic and optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The AMACStar ASIC for the HL-LHC ATLAS ITk Strip detector: design, verification, testing, and quality assurance

For the high-luminosity upgrade to the LHC (HL-LHC), the ATLAS detector at CERN requires an all-new inner detector, the Inner Tracker (ITk). The ITk Strip subdetector is made up of silicon modules, which include three types of radiation-hard ASICs. One of these is the Autonomous Monitor and Control (AMAC). The AMAC is manufactured by Global Foundries using 130 nm CMOS8RF DM technology and is approximately 3 by 5 mm in size. This ASIC autonomously monitors the temperatures, voltages, and currents in the module components while controlling critical values in order to prevent these quantities from reaching dangerous levels. The final design, AMACStar, was verified, tested, and ensured to perform all necessary functions. A quality control procedure using an in-house probe station set-up was developed in order to ensure that every individual chip on each wafer of AMACStars required by the ITk Strip project met performance requirements. The average per wafer yield of usable AMACStars is 92.33%, exceeding the design-specific 90% yield estimated for project costing. This estimate was based on actual yields for similar designs in this process.

Analogue electronic circuits↗
DOE OSTI2020

Study of CMOS strip sensor for future silicon tracker

Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments. CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. Here, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2026

Commissioning of the large-scale lead tungstate scintillating calorimeter

Here, we report on the installation and initial commissioning of a large-scale lead tungstate (PbWO4) scintillating crystal calorimeter developed for high-rate photon detection and precise energy measurement. The calorimeter comprises 1596 high-granularity, high-resolution scintillating crystals optimized for electromagnetic-shower detection over a wide energy range. Scintillation light from each crystal is read out by Hamamatsu R4125 photomultiplier tubes equipped with a custom voltage divider and front-end amplifier to ensure stable gain at high rates. All calorimeter modules were fabricated and characterized using a light-emitting diode–based optical test system prior to installation to verify uniformity and photodetector performance. After installation, the electromagnetic calorimeter was fully integrated into the experiment data acquisition and energy-based trigger systems. The optical response of the modules was equalized using the light-monitoring system, cosmic-ray muons, and photons from Compton-scattering events. Commissioning results demonstrate a reliably calibrated optical response and stable detector performance during the first run. These results validate the calorimeter design and commissioning methodology for large-scale scintillator-based photonic instrumentation.

Analog to digital converters↗
DOE OSTI2020

A Low-Power Time-to-Digital Converter for the CMS Endcap Timing Layer (ETL) Upgrade

We present the design and test results of a Time-to-Digital-Converter (TDC). The TDC will be a part of the readout ASIC, called ETROC, to read out Low-Gain Avalanche Detectors (LGADs) for the CMS Endcap Timing Layer (ETL) of High-Luminosity LHC upgrade. One of the challenges of the ETROC design is that the TDC is required to consume less than 200 W for each pixel at the nominal hit occupancy of 1%. To meet the low-power requirement, we use a single delay line for both the Time of Arrival (TOA) and the Time over Threshold (TOT) measurements without delay control. A double-strobe self-calibration scheme is used to compensate for process variation, temperature, and power supply voltage. The TDC is fabricated in a 65 nm CMOS technology. The overall performances of the TDC have been evaluated. The TOA has a bin size of 17.8 ps within its effective dynamic range of 11.6 ns. The effective measurement precision of the TOA is 5.6 ps and 9.9 ps with and without the nonlinearity correction, respectively. The TDC block consumes 97 W at the hit occupancy of 1%. Over a temperature range from 23 C to 78 C and a power supply voltage range from 1.05 V to 1.35 V (the nominal value of 1.20 V), the self-calibrated bin size of the TOA varies within 0.4%. The measured TDC performances meet the requirements except that more tests will be performed in the future to verify that the TDC complies with the radiation-tolerance specifications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Wideband precision stabilization of the -18.6kV retarding voltage for the KATRIN spectrometer

The Karlsruhe Tritium Neutrino Experiment (KATRIN) measures the effective electron anti-neutrino mass with an unprecedented design sensitivity of 0.2 eV (90 % C.L.). In this experiment, the energy spectrum of beta electrons near the tritium decay endpoint is analyzed with a highly accurate spectrometer. To reach the KATRIN sensitivity target, the retarding voltage of this spectrometer must be stable to the ppm (1 × 10 -6 ) level and well known on various time scales (μs up to months), for values around -18.6 kV. A custom-designed high-voltage regulation system mitigates the impact of interference sources in the absence of a closed electric shield around the large spectrometer vessel. In this article, we describe the regulation system and its integration into the KATRIN setup. Independent monitoring methods demonstrate a stability within 2 ppm, exceeding KATRIN's specifications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

High Temperature Optocoupler for 3D High Density Power Modules

The goal of this proposed research is to develop a reliable high-temperature optocouplers, which can operate at 250°C with at least ten-year lifetime, and replace isolation transforms as the galvanic isolation solution for the 3D integration of high density power modules. The electrification of future transportations (i.e., electric vehicles) will continuously drive the demand for high density power modules. Optocouplers (i.e., packaged light emitter and detector) as a promising candidate to replace bulky isolation transformers are highly desirable to facilitate the continuous scale-down of gate driver circuitry that will lead to 3D high density power modules and achieve disruptive performance in terms of thermal management, power density, power efficiency, reliability and operating environments. However, regular semiconductor optoelectronic materials and devices have significant difficulty functioning in the harsh environments designated for high density power module usage (such as operation at high temperatures). Ultimately, it is not the intrinsic properties of power devices that prevent their use at higher temperatures, but rather the low voltage electronics needed to drive them and the packaging that surrounds them. The typical operating temperature for optocouplers is only up to 100°C, due to the limitations of light emitting diode (LED) devices inside and packaging materials. A systematic characterization methodology will be developed to analyze the performance, lifetime and reliability of LED devices and distinguish multiple failure mechanisms at high temperatures. An original methodology of “design for reliability” will be developed to design the optoelectronic devices with high reliability and long lifetime at high temperatures. A new architecture of high temperature high reliable optocouplers will be developed, fabricated and demonstrated with continuous operating at 250°C. The development of efficient, reliable high density 3D power modules is the foundation for energy efficiency and energy reliability. Enabled with advanced 3D integration and packaging technologies, high density power module solutions can achieve much more superior performance over the conventional discrete solutions in terms of efficiency, thermal management and power density. The proposed concept of high temperature optocouplers as the galvanic isolation solution for high density power modules will bring together interdisciplinary research involving the wide bandgap materials, optoelectronics, high reliable device design, electronics packaging and power modules. A streamline of skilled personnel would be trained including graduate and undergraduate students, local engineers and scientists which are in great demand to both academia and optoelectronics industry. The proposed research topics, such as, solid state lighting and high temperature device reliability, are currently of major interest at the Department of Energy, in particular, Sandia National Laboratories. This project can enhance collaborations between the University of Arkansas (UA) and Sandia National Laboratories. The findings of the proposed research are expected to be integrated into high density 3-D power modules at the Engineering Research Center for Power Optimization for Electro-Thermal Systems (POETS).

42 ENGINEERING↗
DOE OSTI2026

Nanoscale Compositional and Strain Gradients Enable High‐Speed and Amplitude‐Resolved Pyroelectric Sensing

The frequency response of pyroelectric sensors is fundamentally governed by thermal time constant (τth, determined by thermal mass and thermal conductance) and electrical impedance arising from film capacitance and readout circuit. Conventional bulk LiTaO3 detectors are optimized for high responsivity at low modulation frequencies (0.1-10 Hz), possessing a large τth that thermally averages rapid temperature oscillations at elevated modulation frequencies, limiting fidelity in resolving dynamic varying thermal signals. Here, compositional and strain gradients are introduced into 100-nm-thick relaxor-ferroelectric films reducing τth to ≈2 µs and producing built-in potentials (≈1.45 V or 145 kV cm-1) that enhance the pyroelectric coefficient and suppress the dielectric constant. This enables complementary dual-mode operation by enhancing current-mode electrical responsivity and improving the voltage-mode figure of merit - advantageous for superior temperature resolution (ΔTmin ≈ 30 µK). The responsivity peak shifts to near 1 kHz (>2500-times higher than conventional bulk sensors), with measurable responsivity extending to a carrier frequency of 100 kHz and amplitude-resolved detection at modulation frequencies up to 15 kHz. These results establish nanoscale internal-field engineering can reshape electro-thermal trade-off in pyroelectric thin films toward zero-bias, high-thermal-sensitivity, and amplitude-resolved thermal sensing across a wide frequency bandwidth.

Lin, Ching‐Che↗
DOE OSTI2023

Evaluation of planar silicon pixel sensors with the RD53A readout chip for the Phase-2 Upgrade of the CMS Inner Tracker

The Large Hadron Collider at CERN will undergo an upgrade inorder to increase its luminosity to7.5 × 10$^{34}$ cm$^{-2}$s$^{-1}$. The increased luminosityduring this High-Luminosity running phase, starting around 2029,means a higher rate of proton-proton interactions, hence a largerionizing dose and particle fluence for the detectors. The currenttracking system of the CMS experiment will be fully replaced inorder to cope with the new operating conditions. Prototype planarpixel sensors for the CMS Inner Tracker with square50 μm × 50 μm and rectangular100 μm × 25 μm pixels read out by theRD53A chip were characterized in the lab and at the DESY-II testbeamfacility in order to identify designs that meet the requirements ofCMS during the High-Luminosity running phase. A spatial resolutionof approximately 3.4 μm (2 μm) is obtained using themodules with 50 μm × 50 μm(100 μm × 25 μm) pixels at the optimalangle of incidence before irradiation. After irradiation to a 1 MeVneutron equivalent fluence ofΦ$_{eq}$ = 5.3 × 10$^{15}$ cm$^{-2}$, a resolution of9.4 μm is achieved at a bias voltage of 800 V using a modulewith 50 μm × 50 μm pixel size. All modulesretain a hit efficiency in excess of 99% after irradiation tofluences up to 2.1 × 10$^{16}$ cm$^{-2}$. Further studies ofthe electrical properties of the modules, especially crosstalk, arealso presented in this paper.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers

Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. In this work, we report the fabrication and characterization of high-resolution Schottky barrier radiation detectors on 250 μm thick n-type 4H-SiC epitaxial layers, the highest reported thickness to date. Several 8 × 8 mm 2 detectors were fabricated from a diced 100 mm diameter 4H-SiC epitaxial wafer grown on a conductive 4H-SiC substrate with a mean micropipe density of 0.11 cm -2 From the Mott–Schottky plots, the effective doping concentration was found to be in the range (0.95–1.85) × 10 14 cm -3 , implying that full depletion could be achieved at ~5.7 kV (0.5 MV/cm at the interface). The current-voltage characteristics demonstrated consistently low leakage current densities of 1–3 nA/cm 2 at a reverse bias of -800 V. This resulted in the pulse-height spectra generated using a 241Am alpha source (5486 keV) manifesting an energy resolution of less than 0.5% full width at half maximum (FWHM) for all the detectors at -200 V. The charge collection efficiencies (CCEs) were measured to be 98–99% with no discernable correlation to the energy resolution. A drift-diffusion model fit to the variation of CCE as a function of bias voltage, revealed a minority carrier diffusion length of ~10 μm. Deep level transient spectroscopy measurements on the best resolution detector revealed that the excellent performance was the result of having ultralow concentrations of the order of 1011 cm-3 lifetime limiting defects—Z 1/2 and EH 6/7 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗