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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

RD53A: A large-scale prototype chip for the phase II upgrade in the serially powered HL-LHC pixel detectors

The phase II upgrade of the HL-LHC experiments within the LHC intends to deepen the studies of the Higgs boson and to allow the discovery of further particles by adding an integrated luminosity of about 4000 fb -1 over 10 years of operation. This upgrade would overwhelm the installed pixel detector readout chips with higher hit rates and radiation levels than ever before. To match these extreme requirements the RD53 collaboration, a joint effort between ATLAS and CMS, developed RD53A, a new generation pixel detector readout chip prototype manufactured in a 65 nm CMOS technology. It is half the size of the final pixel chips and designed to meet requirements in the face of 3 GHz/cm 2 hit rate after irradiation to 500 Mrad. The detector is able to use 50×50 μm 2 or 25×100 μm 2 pixels with high readout speed of up to 4 links per chip with 1.28 Gbit/s each. Shunt–LDO regulators integrated on the bottom of the chip provide the required voltages to the two power domains, analog and digital. These regulators enable serial powering of the pixel modules, which is the only feasible, radiation hard scheme to ensure acceptable power cable losses and to stay within the material budget for the future pixel detectors. Finally, an overview of the status and challenges of serial powering and the Shunt–LDO regulator development will be given.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor

In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air. The Ni/SiO2/n-4H-SiC MOS detectors not only demonstrated an excellent energy resolution of 0.42% (ΔE/E 100) for 5.48 MeV alpha particles but also caused a lower enhancement in the electronic noise components of the spectrometer compared with that observed for the best high-resolution Schottky barrier detectors. The MOS detectors also exhibited a high charge collection efficiency (CCE) of 96% at the optimized operating bias despite the presence of the oxide layer. A drift-diffusion model applied to the CCE vs gate bias voltage data revealed a minority (hole) carrier diffusion length of 24 μm. Capacitance mode deep level transient spectroscopy (C-DLTS) scans in the temperature range 84–800 K were carried out to identify the resolution limiting electrically active defects. Interestingly, the C-DLTS spectra revealed both positive and negative peaks, indicating the simultaneous presence of electron (majority) and hole (minority) trap centers. It has been inferred that at the steady-state bias for the C-DLTS measurement, the MOS detector operates in the inversion mode at certain device temperatures, causing holes to populate the minority trap centers and, hence, manifests minority carrier peaks as well.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

A flexible test facility for liquid xenon detector development

As liquid xenon time projection chambers scale to ever-larger sizes, so too do the engineering challenges they pose. Here, we describe a large, flexible, multipurpose test facility capable of supporting the development of a number of key aspects of liquid xenon detector systems. Example applications of this facility include characterization of large-area light and charge sensor arrays, tests of xenon purification techniques and materials compatibility, and investigations into high-voltage phenomena. This facility uses an automated and remotely monitored cryo-cooling system based on immersion of the test chamber in a liquid bath rather than conductive coupling, leading to advantages in temperature and pressure stability, as well as increasing required response times in the case of cooling-power loss. Design advantages, operational procedures, and performance of the facility are described, as well as five examples of liquid xenon test chambers that use the facility.

Dark Matter detectors↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
NASA NTRS2002

Contactless conductivity detector for microchip capillary electrophoresis

A microfabricated electrophoresis chip with an integrated contactless conductivity detection system is described. The new contactless conductivity microchip detector is based on placing two planar sensing aluminum film electrodes on the outer side of a poly(methyl methacrylate) (PMMA) microchip (without contacting the solution) and measuring the impedance of the solution in the separation channel. The contactless route obviates problems (e.g., fouling, unwanted reactions) associated with the electrode-solution contact, offers isolation of the detection system from high separation fields, does not compromise the separation efficiency, and greatly simplifies the detector fabrication. Relevant experimental variables, such as the frequency and amplitude of the applied ac voltage or the separation voltage, were examined and optimized. The detector performance was illustrated by the separation of potassium, sodium, barium, and lithium cations and the chloride, sulfate, fluoride, acetate, and phosphate anions. The response was linear (over the 20 microM-7 mM range) and reproducible (RSD = 3.4-4.9%; n = 10), with detection limits of 2.8 and 6.4 microM (for potassium and chloride, respectively). The advantages associated with the contactless conductivity detection, along with the low cost of the integrated PMMA chip/detection system, should enhance the power and scope of microfluidic analytical devices.

NASA Center JPL↗
NASA NTRS1997

The Diagnostics of the External Plasma for the Plasma Rocket

Three regions of plasma temperature/energy are being investigated to understand fully the behavior of the plasma created by the propulsion device and the operation of the RPA. Each type of plasma has a RPA associated with it; i.e. a thermal RPA, a collimated RPA, and a high temperature RPA. Through the process of developing the thermal and collimated RPAs, the proper knowledge and experience has been gained to not only design a high temperature RPA for the plasma rocket, but to understand its operation, results, and uncertainty. After completing a literature search for, reading published papers on, and discussing the operation of the RPA with electric propulsion researchers, I applied the knowledge gained to the development of a RPA for thermal plasma. A design of a thermal RPA was made which compensates for a large Debye length and low ionized plasma. From this design a thermal RPA was constructed. It consists of an outer stainless steel casing, a phenolic insulator (outgases slightly), and stainless steel mesh for the voltage screens. From the experience and knowledge gained in the development of the thermal RPA, a RPA for collimated plasma was developed. A collimated RPA has been designed and constructed. It compensate for a smaller Debye length and much higher ionization than that existing in the thermal plasma. It is 17% of the size of the thermal RPA. A stainless steel casing shields the detector from impinging electrons and ions. An insulating material, epoxy resin, was utilized which has a negligible outgassing. This material can be molded in styrofoam and machined quite nicely. It is capable of withstanding moderately high temperatures. Attached to this resin insulator are inconel screens attached by silver plated copper wire to a voltage supply. All the work on the RPAs and thermal ion source, I performed in the University of Alabama in Huntsville's (UAH) engineering machine shop.

Karr, Gerald R.↗
NASA NTRS1979

Effects of 1-MeV gamma radiation on a multi-anode microchannel array detector tube

A multianode microchannel array (MAMA) detector tube without a photocathode was exposed to a total dose of 1,000,000 rads of 1-MeV gamma radiation from a Co-60 source. The high-voltage characteristic of the microchannel array plate, average dark count, gain, and resolution of pulse height distribution characteristics showed no degradation after this total dose. In fact, the degassing of the microchannels induced by the high radiation flux had the effect of cleaning up the array plate and improving its characteristics.

Timothy, J. G.↗
DOE OSTI2022

Machine Learning-based Cyber-Physical Anomaly Detection in Wide Area Voltage Control Systems

Wide-area voltage control systems (WAVCS) are widely deployed in power grid to improve the voltage stability in transmission system using Flexible AC Transmission System (FACTS) devices. The WAVCS relies on wide-area measurement and control signals for closed-loop control of FACTS devices to improve the transient voltage stability in power grid in real-time. Since the WAVCS utilizes a cyber-layer communication during its normal operation, they are susceptible to cyber attacks from adversaries which can lead to a voltage collapse if the attacks go undetected and unmitigated. This paper proposes a supervised machine learning (ML)-based anomaly detection algorithm for detecting various stealthy cyber attacks in the context of WAVCS cybersecurity. In particular, a fuzzy logic-based wide-area controller, as proposed by the Bonneville Power Administration (BPA), is implemented on the Kundur’s four machine two-area system that is integrated with a static var compensator (SVC) to improve voltage profile on sensitive buses. Later, different types of data integrity attacks, including pulse and ramp attacks, are considered on the wide-area measurement and control signals to analyze the performance of the proposed anomaly detector. Our experimental evaluation shows a promising performance with a high true-positive rate (more than 99%) and low false-negative rate (less than 1%) while exhibiting a small prediction time.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1979

Simplified phase detector

Tanlick sine-wave phase detector gives dc output voltage nearly proportional to phase difference between oscillator signal and reference signal. Device may be used for systems in which signal-to-noise ratio is high.

Hershey, L. M.↗
NASA NTRS2003

Detection of High-impedance Arcing Faults in Radial Distribution DC Systems

High voltage, low current arcing faults in DC power systems have been researched at the NASA Glenn Research Center in order to develop a method for detecting these 'hidden faults', in-situ, before damage to cables and components from localized heating can occur. A simple arc generator was built and high-speed and low-speed monitoring of the voltage and current waveforms, respectively, has shown that these high impedance faults produce a significant increase in high frequency content in the DC bus voltage and low frequency content in the DC system current. Based on these observations, an algorithm was developed using a high-speed data acquisition system that was able to accurately detect high impedance arcing events induced in a single-line system based on the frequency content of the DC bus voltage or the system current. Next, a multi-line, radial distribution system was researched to see if the arc location could be determined through the voltage information when multiple 'detectors' are present in the system. It was shown that a small, passive LC filter was sufficient to reliably isolate the fault to a single line in a multi-line distribution system. Of course, no modification is necessary if only the current information is used to locate the arc. However, data shows that it might be necessary to monitor both the system current and bus voltage to improve the chances of detecting and locating high impedance arcing faults

Gonzalez, Marcelo C.↗
DOE OSTI2021

Performance of microchannel plate based detectors for <25 keV x rays: Monte Carlo simulations and comparisons with experimental results

We present the results of Monte Carlo simulations of the microchannel plate (MCP) response to x rays in the 250 eV to 25 keV energy range as a function of both x-ray energy and impact angle and their comparisons with the experimental results from the X8A beamline at the National Synchrotron Light Source at Brookhaven National Laboratory. Incoming x rays interact with the lead glass of the microchannel plate, producing photoelectrons. Transport of the photoelectrons is neglected in this model, and it is assumed that photoelectrons deposit all their energy at the point they are created. This deposition leads to the generation of many secondary electrons, some fraction of which diffuse to the MCP pore surface where they can initiate secondary electron cascades in the pore under an external voltage bias. X-ray penetration through multiple MCP pore walls is increasingly important above 5 keV, and the effect of this penetration on MCP performance is studied. In agreement with past measurements, we find that the dependence of MCP sensitivity with angle relative to the pore bias changes from a cotangent dependence to angular independence and then proceeds to a secant dependence as the x-ray energy increases. We also find that with the increasing x-ray energy, the MCP gain sensitivity as a function of bias voltage decreases. The simulations also demonstrate that for x rays incident normal to the MCP surface, spatial resolution shows little dependence on the x-ray energy but degrades with the increasing x-ray energy as the angle of incidence relative to the surface normal increases. This agrees with experimental measurements. Simulation studies have also been completed for MCPs gated with a subnanosecond voltage pulse. In this work, we find that the optical gate profile width increases as the x-ray energy is increased above 5 keV, a consequence of increased x-ray penetration at energies >5 keV. Simulations of the pulsed dynamic range show that the dynamic range varies between ~100 and 1000 depending on x-ray energy and peak voltage.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

A sensitive and robust thin-film x-ray detector using 2D layered perovskite diodes

Solid-state radiation detectors, using crystalline semiconductors to convert radiation photons to electrical charges, outperform other technologies with high detectivity and sensitivity. Here, we demonstrate a thin-film x-ray detector comprised with highly crystalline two-dimensional Ruddlesden-Popper phase layered perovskites fabricated in a fully depleted p-i-n architecture. It shows high diode resistivity of 10 12 ohm·cm in reverse-bias regime leading to a high x-ray detecting sensitivity up to 0.276 C Gy air –1 cm –3 . Such high signal is collected by the built-in potential underpinning operation of primary photocurrent device with robust operation. The detectors generate substantial x-ray photon–induced open-circuit voltages that offer an alternative detecting mechanism. Furthermore, our findings suggest a new generation of x-ray detectors based on low-cost layered perovskite thin films for future x-ray imaging technologies.

47 OTHER INSTRUMENTATION↗
NASA NTRS2006

Recent Development of Sb-based Phototransistors in the 0.9- to 2.2-microns Wavelength Range for Applications to Laser Remote Sensing

We have investigated commercially available photodiodes and also recent developed Sb-based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-microns wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response measurements were carried out to determine the responsivity at 2-microns wavelength at different bias voltages with fixed temperature; and different temperatures with fixed bias voltage. Current versus voltage characteristics were also recorded at different temperatures. Results show high responsivity of 2650 A/W corresponding to an internal gain of three orders of magnitude, and high detectivity (D*) of 3.9x10(exp 11) cm.Hz(exp 1/2)/W that is equivalent to a noise-equivalent-power of 4.6x10(exp -14) W/Hz(exp 1/2) (-4.0 V @ -20 C) with a light collecting area diameter of 200-microns. It appears that this recently developed 2-micron phototransistor's performances such as responsivity, detectivity, and gain are improved significantly as compared to the previously published APD and SAM APD using similar materials. These detectors are considered as phototransistors based-on their structures and performance characteristics and may have great potential for high sensitivity differential absorption lidar (DIAL) measurements of carbon dioxide and water vapor at 2.05-microns and 1.9-microns, respectively.

Abedin, M. Nurul↗
NASA NTRS1986

Gating characteristics of photomultiplier tubes for Lidar applications

A detector test facility was developed and applied in the evaluation and characterization of lidar detectors in support of the multipurpose airborne differential absorption lidar (DIAL) system based at the Langley Research Center (LaRC). A performance data base of various detector configurations available to the DIAL system was obtained for optimum lidar detector selection. Photomultiplier tubes (PMT's) with multialkaline and bialkaline photocathodes were evaluated in voltage-divider networks (bases) by using either the focusing electrode or dynodes as a gating mechanism. Characteristics used for detector evaluation included gain stability, signal rise time, and the ability to block unwanted high light levels.

Barrick, J. D. W.↗
NASA NTRS1988

A high voltage power converter for space astronomy applications

A dc-dc low-power, high-voltage converter for use in space is described which furnishes a commandable, low-noise dc output in the range of 0 to -7500 V. The converter is suitable for biasing of detectors commonly employed in space astronomy, microchannel plates, photomultipliers, and gas discharge detectors. The converter's reliability has been demonstrated by accelerated life testing under thermal vacuum. The electrical and mechanical design, packaging, layout and fabrication techniques, and tests employed are described.

Ray, David C.↗
NASA NTRS1978

Frequency analysis of 4- to 6-keV electrons associated with an auroral arc

The high time resolution (HTR) experiment considered consists of four sections, including electrostatic deflection plates, electron multiplier, preamplifier-integrator, and frequency analyzer. Electrons in the energy range from 4 to 6 keV electrons are selected by the deflection system, after which they are detected, multiplied, and passed to the charge sensitive preamplifier. The charge pulses are amplified and integrated, and the resulting voltage pulse series is fed to the frequency analyzer. The experiment is essentially a flux detector, so that estimates of the input flux can be made from the mean value of the output spectrum. The results obtained with the HTR in a rocket flight on March 14, 1974, are discussed. The lack of modulation noticed in the high-frequency range indicates that there is insufficient wave energy available in the vicinity of the rocket to produce a wave-particle interaction which the HTR is able to observe. This finding is consistent with the stabilization of the plasma by the low flux of energetic electrons.

Murphree, J. S.↗
NASA NTRS1993

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

Lin, Steven H.↗
NASA NTRS1999

Fundamental Studies of Solidification in Microgravity Using Real-Time X-Ray Microscopy

This research applies a state of the art X-ray Transmission Microscope, XTM, to image (with resolutions up to 3 micrometers) the solidification of metallic or semiconductor alloys in real-time. We have successfully imaged in real-time: interfacial morphologies, phase growth, coalescence, incorporation of phases into the growing interface, and the solute boundary layer in the liquid at the solid-liquid interface. We have also measured true local growth rates and can evaluate segregation structures in the solid; a form of in-situ metallography. During this study, the growth of secondary phase fibers and lamellae from eutectic and monotectic alloys have been imaged during solidification, in real-time, for the first time in bulk metal alloys. Current high resolution X-ray sources and high contrast X-ray detectors have advanced to allow systematic study of solidification dynamics and the resulting microstructure. We have employed a state-of-the-art sub-micron source with acceleration voltages of 10-100 kV to image solidification of metals. One useful strength of the XTM stems from the manner an image is formed. The radiographic image is a shadow formed by x-ray photons that are not absorbed as they pass through the specimen. Composition gradients within the specimen cause variations in absorption of the flux such that the final image represents a spatial integral of composition (or thickness). The ability to image these features in real-time enables more fundamental and detailed understanding of solidification dynamics than has previously been possible. Hence, application of this technique towards microgravity experiments will allow rigorous testing of critical solidification models.

Curreri, Peter A.↗