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At least 145 records · Page 8

Anisotropic magnetism and electronic structure of trigonal EuAl 2 Ge 2 single crystals

Understanding the interplay between magnetic and electronic degrees of freedom is of profound recent interest in different Eu-based magnetic topological materials. Here, we studied the magnetic and electronic properties of the layered Zintl-phase compound EuAl 2 Ge 2 crystallizing in the trigonal CaAl 2 Si 2 -type structure. We report zero-field neutron diffraction, temperature T - and magnetic-field H-dependent magnetic susceptibility χ(T, H), isothermal magnetization M(T, H), heat capacity C p (T, H), and electrical resistivity ρ(T, H) measurements, together with T-dependent angle-resolved photoemission spectroscopy (ARPES) measurements complemented with first-principle calculations. EuAl 2 Ge 2 undergoes second-order A-type antiferromagnetic (AFM) ordering below T N = 27.5(5) K, with the Eu moments (Eu 2+ , S = 7/2) aligned ferromagnetically in the ab plane while these layers are stacked antiferromagnetically along the c axis. The critical fields at which all moments become parallel to the field are 37.5(5) and 52.5(5) kOe for H ∥ ab and H ∥ c, respectively. The H = 0 magnetic structure consists of trigonal AFM domains associated with ab-plane magnetic anisotropy and a field-induced reorientation of the Eu spins in the domains is also evident at T = 2 K below the critical field H c1 = 2.5(1) kOe. The ρ(T) measurements reveal metallic behavior transforming into a slight resistivity increase on cooling towards T N . A pronounced loss of spin-disorder scattering is observed below T N . The ARPES results show that EuAl 2 Ge 2 is metallic both above and below T N , and the Fermi surface is anisotropic with two hole pockets at the zone center and one small electron pocket at each M point. In the AFM phase, we directly observe folded bands in ARPES due to the doubling of the magnetic unit cell along the c axis with an enhancement of quasiparticle weight due to the complex change in the coupling between the magnetic moments and itinerant electrons on cooling below T N . The observed electronic structure is well reproduced by first-principle calculations, which also predict the presence of nontrivial electronic states near the Fermi level in the AFM phase with Z 2 topological numbers 1;(000)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large anomalous Nernst effect and topological Nernst effect in the noncollinear antiferromagnet NdMn 2⁢ Ge 2

ThCr 2 Si 2 -type NdMn 2 Ge 2 was recently proposed to be a magnetic skyrmion candidate exhibiting the topological Hall effect. In this work, we report magnetic, electronic, and thermoelectric measurements for NdMn 2 Ge 2 single crystals. We show that, in the canted antiferromagnetic phase and the conical magnetic phase with a large out-of-plane ferromagnetic component, this system exhibits both an anomalous Nernst effect and a topological Nernst effect. Here we argue that NdMn 2 Ge 2 is a unique magnetic material, with its topological characteristics associated with the Berry phases in both real space and momentum space.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anisotropic c – f Hybridization in the Ferromagnetic Quantum Critical Metal CeRh 6 Ge 4

Heavy fermion compounds exhibiting a ferromagnetic quantum critical point have attracted considerable interest. Common to two known cases, i.e., CeRh 6 Ge 4 and YbNi 4 P 2 , is that the 4f moments reside along chains with a large interchain distance, exhibiting strong magnetic anisotropy that was proposed to be vital for the ferromagnetic quantum criticality. Here, we report an angle-resolved photoemission study on CeRh 6 Ge 4 in which we observe sharp momentum-dependent 4f bands and clear bending of the conduction bands near the Fermi level, indicating considerable hybridization between conduction and 4f electrons. The extracted hybridization strength is anisotropic in momentum space and is obviously stronger along the Ce chain direction.The hybridized 4f bands persist up to high temperatures, and the evolution of their intensity shows clear band dependence. Our results provide spectroscopic evidence for anisotropic hybridization between conduction and 4f electrons in CeRh 6 Ge 4 , which could be important for understanding the electronic origin of the ferromagnetic quantum criticality.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators ( Ge 1 – δ – x Mn x ) 2 Bi 2 Te 5 ( x ≤ 0.47 , 0.11 ≤ δ ≤ 0.20 )

Magnetic topological insulators provide a platform for emergent phenomena arising from the interplay between magnetism and band topology. Here we report the single crystal growth, crystal structure, magnetic and transport properties, as well as the neutron scattering studies of topological insulator series (Ge 1–δ–x Mn x ) 2 ⁢Bi 2 ⁢Te 5 (x ≤ 0.47, 0.11 ≤ δ ≤ 0.20). Upon doping up to x = 0.47, the lattice parameter c decreases by 0.8%, while the lattice parameter a remains nearly unchanged. Significant Ge vacancies and Ge/Bi site mixing are revealed via elemental analysis as well as refinements of the neutron and x-ray diffraction data, resulting in holes dominating the charge transport. At x = 0.47, below 10.8 K, a bilayer A-type antiferromagnetic ordered state emerges, featuring an ordered moment of 3.0(3) μ B /Mn at 5 K, with the c axis as the easy axis. Magnetization data unveils a much stronger effective interlayer antiferromagnetic exchange interaction and a much smaller uniaxial anisotropy compared to MnBi 2 ⁢Te 4 . We attribute the former to the shorter nearest-neighbor Mn-Mn interlayer superexchange path and the latter to the smaller ligand-field splitting in (Ge 1–δ–x ⁢Mn x ) 2 ⁢Bi 2 ⁢Te 5 . Finally, our study demonstrates that this series of materials holds promise for the investigation of the layer Hall effect and quantum metric nonlinear Hall effect.

36 MATERIALS SCIENCE↗

Double band inversion in the topological phase transition of Ge 1-x Sn x alloys

Abstract We use first-principles simulation and alchemical mixing approximation to reveal the unique double band inversion and topological phase transition in Ge Sn alloys. Wave function parity, spatial charge distribution and surface state spectrum analyses suggest that the band inversion in Ge Sn is relayed by its first valence band. As the system evolves from Ge to -Sn, its conduction band moves down, and inverts with the first and the second valence bands consecutively. The first band inversion makes the system nontrivial, while the second one does not change the topological invariant of the system. Both of the band inversions yield surface modes spanning the individual inverted gaps, but only the surface mode in the upper gap associates with the nontrivial nature of tensile-strained -Sn.

Physics↗

GE 1.5 ESS Wind Turbine Retrofit Controller Development (CRADA Final Report)

National Renewable Energy Laboratory (NREL) and Bachmann electronic corp. will collaborate on the development of a software application to be used on an existing aftermarket Bachmann controller, utilizing and existing Bachmann software platform, which will be used on the General Electric (GE) 1.5 ESS wind turbine. This retrofit will significantly enhance NREL’s ability to control experiments it is planning to conduct on the GE 1.5 wind turbine as part of the Gearbox Reliability Collaborative, Atmosphere to Electrons and other future R&D. The proposed work is leveraging ongoing Department of Energy (DOE) Annual Operating Plan activities on the GE 1.5 ESS wind turbine at the National Wind Technology Center.

17 WIND ENERGY↗

Materials Data on Ge(TeO3)2 by Materials Project

Ge(TeO3)2 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Ge4+ is bonded in an octahedral geometry to six O2- atoms. There are a spread of Ge–O bond distances ranging from 1.91–1.93 Å. Te4+ is bonded in a 3-coordinate geometry to three O2- atoms. There are a spread of Te–O bond distances ranging from 1.91–1.93 Å. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Te4+ atom. In the second O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Te4+ atom. In the third O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Te4+ atom.

36 MATERIALS SCIENCE↗

Materials Data on Ge(SbTe2)2 by Materials Project

Ge(SbTe2)2 crystallizes in the tetragonal I-4m2 space group. The structure is three-dimensional. Ge4+ is bonded to six Te2- atoms to form GeTe6 octahedra that share corners with two equivalent SbTe6 octahedra, corners with four equivalent GeTe6 octahedra, and edges with eight SbTe6 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. There are two shorter (3.00 Å) and four longer (3.06 Å) Ge–Te bond lengths. There are two inequivalent Sb2+ sites. In the first Sb2+ site, Sb2+ is bonded to six Te2- atoms to form SbTe6 octahedra that share corners with two equivalent GeTe6 octahedra, corners with four equivalent SbTe6 octahedra, edges with four equivalent GeTe6 octahedra, and edges with four equivalent SbTe6 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. There are two shorter (3.05 Å) and four longer (3.06 Å) Sb–Te bond lengths. In the second Sb2+ site, Sb2+ is bonded to six Te2- atoms to form SbTe6 octahedra that share corners with four equivalent SbTe6 octahedra, edges with four equivalent GeTe6 octahedra, and edges with four equivalent SbTe6 octahedra. The corner-sharing octahedral tilt angles are 1°. There are two shorter (3.05 Å) and four longer (3.06 Å) Sb–Te bond lengths. There are two inequivalent Te2- sites. In the first Te2- site, Te2- is bonded to two equivalent Ge4+ and three Sb2+ atoms to form a mixture of edge and corner-sharing TeGe2Sb3 square pyramids. In the second Te2- site, Te2- is bonded in a square co-planar geometry to one Ge4+ and three Sb2+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on Ge(SeO3)2 by Materials Project

Ge(SeO3)2 crystallizes in the cubic Pa-3 space group. The structure is three-dimensional. Ge4+ is bonded in an octahedral geometry to six equivalent O2- atoms. All Ge–O bond lengths are 1.92 Å. Se4+ is bonded in a distorted T-shaped geometry to three equivalent O2- atoms. All Se–O bond lengths are 1.75 Å. O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Se4+ atom.

36 MATERIALS SCIENCE↗

Materials Data on Ge(SeO3)2 by Materials Project

Ge(SeO3)2 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Ge4+ is bonded in an octahedral geometry to six O2- atoms. There is four shorter (1.92 Å) and two longer (1.94 Å) Ge–O bond length. Se4+ is bonded in a distorted T-shaped geometry to three O2- atoms. There are a spread of Se–O bond distances ranging from 1.74–1.76 Å. There are three inequivalent O2- sites. In the first O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Se4+ atom. In the second O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Se4+ atom. In the third O2- site, O2- is bonded in a bent 120 degrees geometry to one Ge4+ and one Se4+ atom.

36 MATERIALS SCIENCE↗

Magnetic phase diagram and multiple field-induced states in the intermetallic triangular-lattice antiferromagnet NdAuAl 4 Ge 2 with Ising-like spins

Geometrical frustration and the enhancement of strong quantum fluctuations in two-dimensional triangular antiferromagnets can lead to various intriguing phenomena. Here, in this work, we studied the spin-1/2 triangular lattice antiferromagnet NdAuAl 4 Ge 2 . Thermodynamic and transport properties, such as magnetization and specific heat together with the resistivity measurements were performed. In zero field, two successive phase transitions were observed at T N1 = 1.75 ± 0.02 and T N2 = 0.49 ± 0.02 K, respectively. Under magnetic field, XXZ-type anisotropy was revealed with the moments pointing along the easy c axis. For B∥c, multiple field-induced states were observed, and the magnetic phase diagram was established based on the specific-heat and magnetization data. The temperature-dependent resistivity measurements indicate that NdAuAl 4 Ge 2 is a good metal. It is very likely that both the long-range Ruderman-Kittel-Kasuya-Yosida interactions and the geometrical frustration play important roles in this case.

36 MATERIALS SCIENCE↗

Characterizing Temporal Heterogeneity by Quantifying Nanoscale Fluctuations in Amorphous Fe‐Ge Magnetic Films

Abstract Equilibrium phase transitions are influenced by fluctuations and often discussed within the framework of the Gibbs free energy, wherein the exchange of energy between system and thermal bath is stationary and all regions of the sample exhibit the same phase. Presence of spatial heterogeneity in the magnetic structures such as pinning centers, domain walls, topological defects, etc. may cause temporal heterogeneity that modifies the nature of the magnetic phase transition. This study reports that interplay of nanoscale thermodynamics with spatio‐temporal heterogeneity gives rise to complex phase transition pathways in amorphous Fe x Ge 1‐x thin films with temperature and Fe‐concentration ( x ). Coherent resonant soft X‐ray scattering experiments that have simultaneous spatial, temporal, and spectral sensitivity show that the origin of helical to paramagnetic phase transition in amorphous Fe‐Ge thin films lies in the appearance of enhanced‐fluctuation spots deep inside the ordered state. The fluctuations are heterogeneous, starting over a small fraction of the domains that increases and becomes isotropic over the entire film as the temperature increases or the Fe‐concentration decreases. The fluctuating‐fraction, when normalized to magnetization for different Fe‐concentrations, follows a single power law behavior, suggesting that the nature of the transition can be described in terms of the underlying spatio‐temporal fluctuations.

Singh, Arnab↗

Dimetalloylene (M‐E‐M) Complexes of Heavier Main Group Elements Ge, Sn, Pb, Bi via Cleavage of E‐X Bonds (X=N(SiMe 3 ) 2 , O t Bu) with an Iridium Hydride

Abstract Reactions of the Ir V hydride [ Me BDI Dipp ]IrH 4 {BDI=(Dipp)NC(Me)CH(Me)CN(Dipp); Dipp=2,6‐ i Pr 2 C 6 H 3 } with E[N(SiMe 3 ) 2 ] 2 (E=Sn, Pb) afforded the unusual dimeric dimetallotetrylenes ([ Me BDI Dipp ]IrH) 2 ( μ 2 ‐E) 2 in good yields. Moreover, ([ Me BDI Dipp ]IrH) 2 ( μ 2 ‐Ge) 2 was formed in situ from thermal decomposition of [ Me BDI Dipp ]Ir(H) 2 Ge[N(SiMe 3 ) 2 ] 2 . These reactions are accompanied by liberation of HN(SiMe 3 ) 2 and H 2 through the apparent cleavage of an E−N(SiMe 3 ) 2 bond by Ir−H. In a reversal of this process, ([ Me BDI Dipp ]IrH) 2 ( μ 2 ‐E) 2 reacted with excess H 2 to regenerate [ Me BDI Dipp ]IrH 4 . Varying the concentrations of reactants led to formation of the trimeric ([ Me BDI Dipp ]IrH 2 ) 3 ( μ 2 ‐E) 3 . The further scope of this synthetic route was investigated with group 15 amides, and ([ Me BDI Dipp ]IrH) 2 ( μ 2 ‐Bi) 2 was prepared by the reaction of [ Me BDI Dipp ]IrH 4 with Bi(NMe 2 ) 3 or Bi(O t Bu) 3 to afford the first example of a “naked” two‐coordinate Bi atom bound exclusively to transition metals. A viable mechanism that accounts for the formation of these products is proposed. Computational investigations of the Ir 2 E 2 (E=Sn, Pb) compounds characterized them as open‐shell singlets with confined nonbonding lone pairs at the E centers. In contrast, Ir 2 Bi 2 is characterized as having a closed‐shell singlet ground state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High-precision measurements of half-lives for 69 Ge, 73 Se, 83 Sr, 85 mSr, and 63 Zn radionuclides relevant to the astrophysical p-process via photoactivation at the Madison Accelerator Laboratory

The ground state half-lives of 69 Ge, 73 Se, 83 Sr, 63 Zn, and the half-life of the 1/2 - isomer in 85 Sr have been measured with high precision using the photoactivation technique at an unconventional bremsstrahlung facility that features a repurposed medical electron linear accelerator. The γ -ray activity was counted over about 6 half-lives with a high-purity germanium detector, enclosed into an ultra low-background lead shield. The measured half-lives are: T 1/2 ( 69 Ge) = 38.82 ± 0.07 (stat) ± 0.06 (sys) h; T 1/2 ( 73 Se) = 7.18 ± 0.02 (stat) ± 0.004 (sys) h; T 1/2 ( 83 Sr) = 31.87 ± 1.16 (stat) ± 0.42 (sys) h; T 1/2 ( 85m Sr) = 68.24 ± 0.84 (stat) ± 0.11 (sys) min; T 1/2 ( 63 Zn) = 38.71 ± 0.25 (stat) ± 0.10 (sys) min. These high-precision half-life measurements will contribute to a more accurate determination of corresponding ground-state photoneutron reaction rates, which are part of a broader effort of constraining statistical nuclear models needed to calculate stellar nuclear reaction rates relevant for the astrophysical p -process nucleosynthesis.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Emergence of complex-regular eutectic patterns in Al–Ge: Observations from correlative nano-imaging

Eutectic solidification exemplifies nonequilibrium pattern formation, making it a well-studied moving boundary problem. Yet the mechanisms behind the formation of complex-regular microstructures – particularly in highly anisotropic systems with a significant volume fraction of a faceted phase – remain poorly understood. Our understanding of such systems is made complicated by the nonlinear interface kinetics and unique growth dynamics characteristic of faceted phases. To address these challenges, we investigate a model Al–Ge eutectic system, where the faceted Ge phase constitutes a substantial volume fraction (~0.35) and where the two solid phases arrange into so-called “fishbone” or “feather” complex-regular patterns. Using synchrotron-based x-ray nano-imaging and nanotomography with high spatial resolution (22 nm per pixel), we capture in real-time the evolution of the solid–liquid interfaces and the resulting three-dimensional microstructures in this faceted/non-faceted eutectic system. By integrating these observations with electron backscattered diffraction, we elucidate the crystallographic biases on the solidification process and the mechanisms driving the formation of such complex-regular microstructures. These findings inform a new growth model for irregular eutectics in (near-)symmetrical phase diagrams, offering insight on advanced microstructural design and processing strategies. More broadly, we demonstrate how interfacial curvature is generated in irregular eutectic alloys and how it depends on the volume fraction of the faceted phase.

36 MATERIALS SCIENCE↗

Measurement of the 70 Ge( d , n ) 71 As cross section from 2.1 MeV to 10 MeV

This work reports experimental 70 Ge(d,n) 71 As cross sections producing Arsenic-71 (t 1/2 = 65.3 h, 28% β + ), a potentially useful diagnostic radionuclide. Target stacks containing two nat Ge foils, a nat Ni monitor foil, and an Al degrader were irradiated with 5.5–10 MeV deuterons using an FN Tandem Van de Graaff accelerator. 71 As and 61 Cu, 56 Co, and 58 Co (from nat Ni(d,x)) were quantified in the foils by high purity germanium gamma spectrometry. Furthermore, the measured cross sections are larger than previously reported and suitable for producing preclinical quantities of diagnostic radiopharmaceuticals.

07 ISOTOPE AND RADIATION SOURCES↗

Comparing approaches for introducing polycyclic aromatic hydrocarbons to Ge(001) to seed graphene nanoribbon synthesis by CH 4 chemical vapor deposition

Here, we evaluate two approaches for introducing polycyclic aromatic hydrocarbons (PAHs) to a graphene catalyst substrate as part of a two-step chemical vapor deposition (CVD) process for growing graphene nanoribbons (GNRs). In this process, PAHs first form graphene-like seeds on Ge, and then GNRs are subsequently evolved from these PAH-derived seeds via substrate-mediated anisotropic growth kinetics during the CVD of CH4. The first seeding approach sublimes controlled doses of PAH thin films into the CVD chamber, while the second delivers PAHs directly from the vapor phase at set concentrations. Using these two approaches, we measure the dependence of GNR density on PAH dose and compare the experimental results with predictions from a rate model of PAH diffusion, desorption, and clustering. We find that PAHs that more strongly adsorb to the catalyst surface (generally larger PAHs) desirably remain more individualized prior to GNR evolution whereas smaller, more weakly bound PAHs aggregate into larger clusters with various sizes on Ge that are undesirable for synthesizing more monodisperse GNRs. As a result, this work is important because it offers a framework that enables the rational selection and design of seed molecules, advancing anisotropic GNR CVD synthesis.

CVD↗

Indium segregation in Gd 5 (Si, Ge) 4 magnetocaloric materials

Chemical substitution is one of the most efficient tools to tune and optimize magnetic and magnetocaloric properties of the giant magnetocaloric materials. In particular, Indium substitutions could be useful both for tuning properties of these interesting intermetallic materials and to unveil their local-scale behavior across the magnetostructural transition via hyperfine techniques. Hence, in order to investigate the effect of Indium additions on the crystal structure, micro-structure, magnetic and magnetocaloric properties, a series of In-containing samples derived from the base Gd 5 Si 1.2 Ge 2.8 stoichiometry were prepared. Here, the major findings are that while In is insoluble in the 5:4 phase, it will instead promote the emergence of the impurity 5:3 phase and segregates into this phase. Hence, In leads to major crystallographic changes, which enhance atomic disorder and disrupt the Si to Ge ratio in the 5:4 phase. Subsequently, a higher 5:4 unit cell volume and a lower magnetic ordering temperature are found in the In-substituted samples. Finally, the magnetocaloric properties of the In-substituted samples reveal a detrimental effect on the maximum magnetic entropy change.

36 MATERIALS SCIENCE↗