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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, in this paper, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band x-ray photoelectron spectroscopy, Fourier-transform infrared spectroscopy, and Raman) and microscopic (atomic force microscopy and scanning transmission electron microscopy) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that the BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (~234 V) as compared to GaN (~168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step toward bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

42 ENGINEERING↗
DOE OSTI2023

Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing

The diffusion behavior of Mg in Mg/N co-implanted GaN is investigated in response to a set of annealing conditions and methodologies, namely, 1000 °C/30 min thermal anneal, by high-temperature pulsed gyrotron microwave annealing at 1420 or 1500 °C, or by thermal and microwave annealing, sequentially. After 1000 °C annealing, the diffusion of Mg in GaN is found to be negligible, as measured by secondary ion mass spectrometry. Annealing by gyrotron microwave annealing alone induces the diffusion of Mg at a rate on the order of 10 −12 cm 2 /s. However, the use of a thermal anneal before microwave gyrotron annealing reduces this rate by an order of magnitude to 10 −13 cm 2 /s. We find that a model that considers Mg diffusion from an inhomogeneous medium that contains a defect-rich implanted region near-surface to a relatively pristine region below the implant range better explains the observed diffusion behavior than a conventional model that assumes a homogeneous medium. By analyzing the diffusion behavior using the Boltzmann–Matano method, we present a discussion of reduction in [V Ga ] by thermal annealing at 1000 °C, leading to a suppressed diffusion coefficient during subsequent high-temperature annealing relative to diffusion after 1420/1500 °C annealing alone. This effect holds potential for improvement in the precision of selectively doped regions for future applications based on the (Al)GaN material system. An improved field profile control in real devices can increase the breakdown and current-handling capabilities in power electronic applications.

Meyers, V.↗
DOE OSTI2023

Measurement of minority carrier diffusion length in p -GaN using electron emission spectroscopy (EES)

Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n – -n + junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 × 10 19 cm –3 . By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface with increasing p-thickness, we were able to extract the minority carrier diffusion length of electron in p-type GaN, L e = 26 ± 3 nm. The measured value is in good agreement with literature reported values. In conclusion, the extrapolated electron current at the n – region–p-GaN interface is in reasonable agreement with the simulated electron current at the interface.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation.

Physics↗
DOE OSTI2024

Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires

For this work, we have examined the origins of polytype selection during metal-mediated molecular-beam epitaxy of GaN nanowires (NWs). High-angle annular dark-field scanning transmission electron microscopy reveals [111]-oriented zinc blende (ZB) NWs and [0001]-oriented wurtzite (WZ) NWs, with SixNy at the interface between individual NWs and the Si (001) substrate. Quantitative energy dispersive x-ray spectroscopy reveals a notably higher Si concentration of 7.0% ± 2.3% in zinc blende (ZB) NWs than 2.3% ± 1.2% in wurtzite (WZ) NWs. Meanwhile, density functional theory calculations show that incorporation of 8 at. % Si on the Ga sublattice inverts the difference in formation energies between WZ and ZB GaN, such that the ZB polytype of GaN is stabilized. This identification of Si and other ZB polytype stabilizers will enable the development of polytype heterostructures in a wide variety of WZ-preferring compounds.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Experimental determination of the valence band offsets of ZnGeN 2 and (ZnGe) 0.94 Ga 0.12 N 2 with GaN

A predicted type-II staggered band alignment with an approximately 1.4 eV valence band offset at the ZnGeN 2 /GaN heterointerface has inspired novel band-engineered III-N/ZnGeN 2 heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown (ZnGe) 1- x Ga 2 x N 2 , for x = 0 and 0.06, and GaN using x-ray photoemission spectroscopy. The valence band of ZnGeN 2 was found to lie 1.45–1.65 eV above that of GaN. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For (ZnGe) 0.94 Ga 0.12 N 2 the value was determined to be 1.29 eV, ~10%–20% lower than that of ZnGeN 2 . The experimental determination of the large band offset between ZnGeN 2 and GaN provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.

Physics↗
DOE OSTI2024

GaN-based W-band receiver chip development for fusion plasma diagnostics

Millimeter-wave diagnostics have proven effective on various magnetic fusion devices worldwide, yet the formidable challenges posed by the harsh environments of future burning plasma devices, characterized by extreme temperatures, pressures, and radiation levels, remain a significant hurdle. To address these challenges, the utilization of wide bandgap Gallium Nitride (GaN)-based millimeter-wave diagnostics is a most promising solution for fusion reactor safety monitoring and control. A noteworthy W-band GaN-based system-on-chip receiver has been the demonstrated by employing HRL T3 40 nm GaN technology. This receiver chip, compactly designed with dimensions of 3 × 5 mm 2 , incorporates essential components such as the 75–110 GHz RF Low-Noise Amplifier (LNA), mixer, Intermediate Frequency (IF) amplifier, and Local Oscillator (LO) chain. This receiver chip will be packaged as a millimeter-wave receiver module and applied on the DIII-D National Fusion Facility, for fusion plasma edge shape monitoring for operational safety and dangerous disruption prediction. The laboratory measurement results have demonstrated suitable performance. Furthermore, this advancement is pivotal for accurate analysis of plasma behavior in the extreme conditions of burning plasma devices, driving progress in fusion research and technology.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Porter, Matthew↗
DOE OSTI2023

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗
DOE OSTI2020

Factors and Considerations for Modeling Loss of a GaN-based Inverter

The article investigates the impacts of four often-neglected factors on the loss model of a GaN-based full-bridge inverter: parasitic capacitance of the devices, dynamics of junction temperature (Tj) under time-varying power dissipation (Ploss), case temperature estimation, and detailed considerations of the passive components. Procedures to calculate the converter loss considering the above factors are proposed and implemented. A 4.5-kW hard-switching inverter prototype using gallium nitrite (GaN) high-electron-mobility transistors is used to experimentally demonstrate the impact of each factor on the converter loss model. Furthermore, it is found that the accuracy of a converter loss model is mainly affected by the passive components at the light load condition, whereas the thermal and loss models of the active components become the major factors as the output power increases. The results show that after considering the above factors, the converter loss discrepancy between calculation and measurement can be reduced from 30.6 W (28%) to 2.5 W (less than 3%) at heavy load (Po = 4.5 kW), while at the light load condition (Po = 500 W), it is reduced from 3.9 W (28%) to 2.6 W (16%). Furthermore, the difference between simulated and measured case temperature of the GaN devices is within 6 °C.

42 ENGINEERING↗
DOE OSTI2020

( Invited ) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests

Currently, a spectrum of reliability tests are being performed by both device manufacturers and end users. Many of these qualification tests are operated within the device safe-operating-area (SOA), however, the devices often undergo dynamic events in many converter applications that can exceed the SOA boundaries. This paper presents our recent work on quantifying the out-of-SOA robustness of GaN power high-electron-mobility transistors (HEMTs) and SiC power MOSFETs by switching based tests. The unclamped inductive switching stresses are applied to p-gate GaN HEMTs to evaluate their surge-energy and overvoltage robustness. The continuous, hard-switching, turn-off stresses are applied to SiC MOSFETs to evaluate their overvoltage switching robustness. As a result, both experiments demonstrate the robustness of SiC and GaN devices under out-of-SOA switching events, and the physics of degradation and failure are understood.

42 ENGINEERING↗
DOE OSTI2022

Regrowth and Selective Area Growth of GaN for Vertical Power Electronics

Gallium Nitride (GaN) has a great potential in high-power and high-frequency applications due to its wide energy gap and good transport property. So far all commercial GaN optoelectronic and electronic devices have planar junctions and heterostructures prepared by epitaxial growth. To take the advantage of the merits of GaN material properties, more sophisticated device configurations such as current-aperture vertical electron transistors (CAVETs), junction field-effect transistors (JFETs), and super-junction (SJ) devices require the ability to form in-plane, lateral junctions by selective area doping (SAD). In this project, we explored a novel approach of realizing SAD through selective-area etching (SAE) followed by selective-area growth (SAG).

36 MATERIALS SCIENCE↗
DOE OSTI2022

Radiation-Hardened GaN-Based Wireless Communications Architectures for Terrestrial Nuclear Reactor Sensing and Instrumentation

Wireless technologies have become increasingly common in applications, ranging from close proximity inductive communication links in medical devices to short-range Bluetooth and WiFi communications and longer-range cellular communications. Nonetheless, these technologies are unsuitable for use in or around nuclear reactors due to the extreme radiation and temperatures inherent in these environments and their associated significant degradative effects on electronics hardware. However, recent work in wide bandgap– based electronics has shown promise for gallium nitride (GaN) as an emerging technology for the realization of practical wireless communications systems for use in harsh environments. This report presents initial progress on the development of wireless communications architectures designed specifically for nuclear reactor application, based on inherently radiation-hardened (rad-hard) GaN technology. Prior work on rad-hard analog communications topologies is reviewed, and several digital modulation and encoding schemes that utilize GaN-based electronics devices are newly proposed for application in reactor environments. Continuous-time and discrete-time system simulations were performed, and results are presented for the preliminary transmitter and receiver designs, respectively. In addition, an overview of a software-defined radio testbed, designed for communications protocol development, is provided. Future work will focus on implementing candidate radiation-resistant wireless architectures using a research AlGaN/GaN high electron mobility transistor (HEMT) integrated circuit process, which is available at the Ohio State University, and irradiation studies will be carried out to assess the true potential of this technology for reactor application.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2026

GaN Core-shell Nanofin Vertical Transistor (CoNVerT): A New Direction for Power Electronics (Final Scientific/Technical Report)

A novel power transistor architecture, the GaN c ore-shell n anofin ver tical transistor (CoNVerT) to address fundamental challenges in realizing the ultimate limit of GaN power transistor performance was explored experimentally. This technology promises ultra-high-efficiency high voltage/high power applications (e.g. DC/DC converters, motor control, fast charging, actuation), as well as to operate in harsh environments. The device exploits a vertical superjunction structure based on an experimentally-validated core-shell nanofin growth process in which lateral p-n heterojunctions are formed in a single growth step, while still maintaining vertical current flow for compact die size and low cost. The concept leverages the best properties of GaN for mid-range voltage applications: high mobility, high breakdown voltage, and native heterojunction enhancement-mode operation. Due to the crystallographic nature of the nanofin growth by molecular beam epitaxy, the sidewall heterojunctions occur on non-polar planes, resulting in ultra-smooth interfaces for high mobility, no sidewall etch damage and related surface/interface states, and elimination of piezoelectric effects that can limit reliability in conventional structures. This also facilitates superjunction formation for maximum device performance, and the selective-area growth of the nanofin results in dislocation-free growth, even on low-cost Si (111) substrate. In this program, core-shell nanofins were grown by molecular beam epitaxy, test structures to evaluate the doping, resistivity, and other electrical properties were fabricated, and the material and test structures were characterized in detail. The work identified clear potential (e.g., the doping was well controlled as required for superjunction concepts), but also additional areas that require additional effort to resolve (some unexpected crystal defects were encountered that require additional engineering to overcome). Simulation studies of the proposed concept validate that the fundamental approach is very promising, but additional effort in experimental realization is needed.

42 ENGINEERING↗
DOE OSTI2026

World’s First Vertical GaN based High Power (200 kW) Multi-level Traction Electric Drive Design

Vertical GaN (vGaN) technology leverages a fully conductive 3D semiconductor structure, enabling superior power density compared to GaN-on-Si and other wide bandgap devices. It offers a pathway to surpass cost and efficiency limitations of Si and SiC devices in traction applications. However, scaling for high-voltage, high-power systems remains challenging. This paper presents the design of an 800V, 200kW traction inverter utilizing vertical GaN devices. The inverter achieves ultra-high efficiency (> 99.5%) through advanced power module integration and employs multilevel neutral-point-less X-type (NPL.X) inverter topology to ensure optimal traction drive system performance. These innovations demonstrate the potential of vGaN for next￾generation electric propulsion systems.

Alam, Khorshed [General Motors LLC, Detroit, MI (U↗
DOE OSTI2023

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Here we investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ~10 9 , a near-unity ideality factor of 1.03, and a barrier height of ~0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.

42 ENGINEERING↗
NASA NTRS2003

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Freeman, Jon C.↗
NASA NTRS2003

Results From Cs Activated GaN Photocathode Development for MCP Detector Systems at GSFC

We describe the development of high quantum efficiency W photocathodes for use in large area two dimensional microchannel plate based detector arrays to enable new W space astronomy missions. Future W missions will require improvements in detector sensitivity, which has the most leverage for cost-effective improvements in overall telescope/instrument sensitivity. We use new materials such as p-doped GaN, AIGaN, ZnMgO, Sic and diamond. We have currently obtained QE values > 40 % at 185 nm with Cesiated GaN, and hope to demonstrate higher values in the future. By using controlled internal fields and nano-structuring of the surfaces, we plan to provide field emission assistance for photoelectrons while maintaining their energy distinction from dark noise electrons. We will transfer these methods from GaN to ZnMgO, a new family of wide band-gap materials more compatible with microchannel plates. We also are exploring technical parameters such as doping profiles, internal and external field strengths, angle of incidence, field emission assistance, surface preparation, etc.

Norton, Tim↗