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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Cryogenic probe station for use in automated microwave and noise figure measurements

A cryogenic measurement system capable of performing on-wafer RF testing of semiconductor devices and circuits has been developed. This 'CryoProbe Station' can wafer-probe devices and circuits at cryogenic temperatures, thus eliminating the need for wire bonds. The system operates under vacuum created by a sorption pump. It uses an open cycle cooling system that can be cooled with either liquid nitrogen or liquid helium. Presently, it can reach temperatures, as low as 80 K and 37 K for each of the coolants, respectively. The temperature can be raised using a heater and it is stabilized to within 0.2 K by use of a temperature controller. The CryoProbe Station features a 1 by 2 inch stage that can hold large circuits and calibration standards simultaneously. The system is used with a Hewlett Packard 8510C Automatic Network Analyzer (ANA) to obtain S-parameter data over the frequency range 0.045-26.5 GHz. S-parameter data on HEMT (high electron mobility transistors) devices has been obtained with this station. With the use of DEEMBED software from NIST, detailed transmission line studies have been performed. Although the CryoProbe Station is designed for frequencies up to 26.5 GHz, useful transmission line data has been obtained for frequencies as high as 40 GHz. The CryoProbe station has also been used with the ATN noise figure measurement system to perform automatic, temperature dependent noise figure measurements.

Taub, Susan R.↗
NASA NTRS1994

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

Sewell, James S.↗
NASA NTRS1994

Characteristics of III-V Semiconductor Devices at High Temperature

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Simons, Rainee N.↗
NASA NTRS1994

A radio telescope for the calibration of radio sources at 32 gigahertz

A 1.5-m-diameter radio telescope has been designed, developed, and assembled to directly measure the flux density of radio sources in the 32-GHz (Ka-band) frequency band. The main goal of the design and development was to provide a system that could yield the greatest absolute accuracy yet possible with such a system. The accuracy of the measurements have a heritage that is traceable to the National Institute of Standards and Technology. At the present time, the absolute accuracy of flux density measurements provided by this telescope system, during Venus observations at nearly closest approach to Earth, is plus or minus 5 percent, with an associated precision of plus or minus 2 percent. Combining a cooled high-electron mobility transistor low-noise amplifier, twin-beam Dicke switching antenna, and accurate positioning system resulted in a state-of-the-art system at 32 GHz. This article describes the design and performance of the system as it was delivered to the Owens Valley Radio Observatory to support direct calibrations of the strongest radio sources at Ka-band.

Gatti, M. S.↗
NASA NTRS1995

On-wafer, cryogenic characterization of ultra-low noise HEMT devices

Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.

Bautista, J. J.↗
NASA NTRS1995

A Novel Application of Fourier Transform Spectroscopy with HEMT Amplifiers at Microwave Frequencies

The goal was to develop cryogenic high-electron-mobility transistor (HEMT) based radiometers and use them to measure the anisotropy in the cosmic microwave background (CMB). In particular, a novel Fourier transform spectrometer (FTS) built entirely of waveguide components would be developed. A dual-polarization Ka-band HEMT radiometer and a similar Q-band radiometer were built. In a series of measurements spanning three years made from a ground-based site in Saskatoon, SK, the amplitude, frequency spectrum, and spatial frequency spectrum of the anisotropy were measured. A prototype Ka-band FTS was built and tested, and a simplified version is proposed for the MAP satellite mission. The 1/f characteristics of HEMT amplifiers were quantified using correlation techniques.

Wilkinson, David T.↗
NASA NTRS1998

A Cryogenic GaAs PHEMT/ Ferroelectric Ku-Band Tunable Oscillator

A Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies: a 0.25 mm GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold microstrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying dc bias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.

Romanofsky, Robert R.↗
NASA NTRS1996

An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates

This thesis addresses the acoustoelectric issues concerning the amplification of surface acoustic waves (SAWs) and the reflection of SAWs from slanted reflector gratings on GaAs, with application to a novel acoustic charge transport (ACT) device architecture. First a simple model of the SAWAMP was developed, which was subsequently used to define the epitaxially grown material structure necessary to provide simultaneously high resistance and high electron mobility. In addition, a segmented SAWAMP structure was explored with line widths on the order of an acoustic wavelength. This resulted in the demonstration of SAWAMPS with an order of magnitude less voltage and power requirements than previously reported devices. A two-dimensional model was developed to explain the performance of devices with charge confinement layers less then 0.5 mm, which was experimentally verified. This model was extended to predict a greatly increased gain from the addition of a ZnO overlay. These overlays were experimentally attempted, but no working devices were reported due to process incompatibilities. In addition to the SAWAMP research, the reflection of SAWs from slanted gratings on GaAs was also studied and experimentally determined reflection coefficients for both 45 deg grooves and Al stripes on GaAs have been reported for the first time. The SAWAMp and reflector gratings were combined to investigate the integrated ring oscillator for application to the proposed ACT device and design parameters for this device have been provided.

Hunt, W. D.↗
NASA NTRS1997

An Analysis of Closure Mechanisms in the Plasma Wake of the TSS-1R Satellite

Collisionless Plasma Expansion (CPE), also known as "plasma expansion into a vacuum," in its most fundamental form, is the process by which a plasma expands into a void, or region highly depleted of particles. In CPE, the expansion is driven by the highly mobile electron constituent of the plasma as it moves across the density gradient and into the void region. A bi-polar electric field is set up between this rapidly expanding electron front and the massive ions, which have a low thermal speed and lag behind in the region of the plasma-void interface. These ions are quickly accelerated by the expansion electric field and can, theoretically, approach the thermal speed of the electrons. CPE is a fundamental and a very robust process in that it only requires that a sharp density gradient exist in a plasma. It has already been observed to exist in various plasmas ranging over five orders of magnitude in density. The range of phenomena in which CPE has been observed includes the closure of plasma wakes created in simulated space plasmas in the laboratory; it was found to be the process controlling the refilling of the wake created by the Space Shuttle in the ionospheric plasma; and recent in situ data, obtained by the WIND spacecraft as it passed through the wake of the earth's moon last year, have shown CPE to be involved in the closure of the Lunar wake. CPE is also expected to influence the morphology and physics of the solar wind interactions with Mercury and Mars, and has been suggested as a potential factor in such wide ranging phenomena as the acceleration of plasma away from the coma of comets and the energization of ions that underlies the upward expansion of the polar wind into the earth's magnetosphere. The Tethered Satellite System (TSS)-1R data provides an opportunity to test this process in situ under semi-controlled conditions. The available data shows the intensity, drift energy and angle of inclination to the wake of the converging ion streams at a down stream distance of one satellite radius (80 CM).

Stone, N. H.↗
NASA NTRS1999

Shock Wave Dynamics in Weakly Ionized Plasmas

An investigation of the dynamics of shock waves in weakly ionized argon plasmas has been performed using a pressure ruptured shock tube. The velocity of the shock is observed to increase when the shock traverses the plasma. The observed increases cannot be accounted for by thermal effects alone. Possible mechanisms that could explain the anomalous behavior include a vibrational/translational relaxation in the nonequilibrium plasma, electron diffusion across the shock front resulting from high electron mobility, and the propagation of ion-acoustic waves generated at the shock front. Using a turbulence model based on reduced kinetic theory, analysis of the observed results suggest a role for turbulence in anomalous shock dynamics in weakly ionized media and plasma-induced hypersonic drag reduction.

Johnson, Joseph A., III↗
NASA NTRS1998

A 90 GHz Amplifier Assembled Using a Bump-Bonded InP-Based HEMT

We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.

Pinsukanjana, Paul R.↗
NASA NTRS1993

A Monolithic W-Band Three-Stage LNA Using 0.1 Micron InAlAs/InGaAs/InP HEMT Technology

A monolithic W-band three-stage Low Noise Amplifiers (LNA) based on 0.1 um pseudomorphic InAlAs/InGaAs/InP (High Electron Mobility Transistors (HEMTs) has been developed. this LNA demonstrated a noise figure of 4.3 dB and an associated small signal gain of 19 dB at 100 GHz with a low dc power consumption of 20 mW. This is the best reported monolithic W-band LNA performance using InP-based HEMT technology and demonstrates the potential of InP HEMT technology for higher millimeter-wave applications.

Wang, H.↗
NASA NTRS2001

InP MMIC Chip Set for Power Sources Covering 80-170 GHz

We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.

Ngo, Catherine↗
NASA NTRS2002

Cryogenetically Cooled Field Effect Transistors for Low-Noise Systems

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Wollack, Edward J.↗
NASA NTRS2002

Cryogenically Cooled Field Effect Transistors for Low-Noise Systems

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Wollack, Edward J.↗
NASA NTRS2004

Development of Submillimeter SIS Mixers and Broadband HEMT Amplifiers

This is the final technical report for NASA grant NAG5-9493. entitled "Development of Submillimeter SIS Mixers and Broadband HEMT Amplifiers". The goal of this project was to develop and demonstrate a new generation of superconducting tunnel junction (SIS) receivers with extremely wide instantaneous (intermediate-frequency, or IF) bandwidths. of order 12 GHz. along with the wideband low-noise microwave HEMT (high electron mobility transistor) amplifiers which follow the SIS mixer. These wideband SIS/HEMT receivers would allow rapid submillimeter wavelength spectral line surveys to be carried out, for instance with the NASA airborne observatory SOFIA. and could potentially be useful for future submillimeter space missions such as SAFIR. In addition, there are potential NASA earth science applications. such as the monitoring of the distribution of chemical species in the stratosphere and troposphere using the limb-sounding technique. The overall goals of this project have been achieved: a broadband 200-300 SIS receiver was designed and constructed, and was demonstrated in the field through a test run at the Caltech Submillimeter Observatory on Mauna Kea. HI. The technical details are described in the appendices. which are primarily conference publications. but Appendix A also includes an unpublished summary of the latest results. The work on the SIS mixer design are described in the conference publications (appendices B and C). The "Supermix" software package that was developed at Caltech and used for the SIS design is also described in two conference papers, but has been substantially revised, debugged. and extended as part of the work completed for this grant. The Supermix package is made available to the community at no charge. The electromagnetic design of a radial waveguide probe similar to the one used in this work is described in a journal publication. Details of the novel fabrication procedure used for producing the SIS devices at JPL are also given in an upcoming journal article. Finally, details on the wideband HEMT amplifier design and noise characterization techniques are described in two publications.

Zmuidzinas, J.↗
NASA NTRS1996

Highly Efficient Amplifier for Ka-Band Communications

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Source record↗
NASA NTRS1999

Highly Conducting Graphite Epoxy Composite Demonstrated

Weight savings as high as 80 percent could be achieved if graphite polymer composites could replace aluminum in structures such as electromagnetic interference shielding covers and grounding planes. This could result in significant cost savings, especially for the mobile electronics found in spacecraft, aircraft, automobiles, and hand-held consumer electronics. However, such composites had not yet been fabricated with conductivity sufficient to enable these applications. To address this lack, a partnership of the NASA Lewis Research Center, Manchester College, and Applied Sciences, Inc., fabricated nonmetallic composites with unprecedented electrical conductivity. For these composites, heat-treated, vapor-grown graphite fibers were selected which have a resistivity of about 80 mW-cm, more than 20 times more conductive than typical carbon fibers. These fibers were then intercalated with iodine bromide (IBr). Intercalation is the insertion of guest atoms or molecules between the carbon planes of the graphite fibers. Since the carbon planes are not highly distorted in the process, intercalation has little effect on mechanical and thermal properties. Intercalation does, however, lower the carbon fiber resistivity to less than 10 mW-cm, which is comparable to that of metal fibers. Scaleup of the reaction was required since the initial intercalation experiments would be carried out on 20-mg quantities of fibers, and tens of grams of intercalated fibers would be needed to fabricate even small demonstration composites. The reaction was first optimized through a time and temperature study that yielded fibers with a resistivity of 8.7 2 mW-cm when exposed to IBr vapor at 114 C for 24 hours. Stability studies indicated that the intercalated fibers rapidly lost their conductivity when exposed to temperatures as low as 40 C in air. They were not, however, susceptible to degradation by water vapor in the manner of most graphite intercalation compounds. The 1000-fold scaleup experiments concluded that 114 C was near the optimum temperature, but that the intercalation time needed to be lengthened by a factor of 3.

Gaier, James R.↗