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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

High performance Calcium Copper Titanate/Polyimide dielectrics composites enabled through colloidal stabilization

Transition to electrified transportation demands advanced power electronic components with the capability to improve range, reliability, and cost of ownership to accelerate mass market adoption. Thus, improvement in the current designs, manufacturing processes, materials, and components capable of providing reliable and efficient operation at higher temperatures play important roles in meeting future needs. To address these challenges, this article focuses on novel dielectric materials designed to reduce the volume of the most important and bulky component of a power electronic system, a capacitor. A new composite dielectric material was developed by integrating the positive attributes of both polymer and ceramic capacitors to overcome the challenges of state-of-the-art dielectric materials. Further, the developed composite properties have been evaluated and showed promising results, achieving a dielectric constant of 250 at 100 Hz, 25°C, unseen in current literature. Additionally, these materials can function at high temperatures (>150°C) with good breakdown strength, providing promising working conditions for capacitors, especially in electric vehicle applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

1D modeling of plasma streamers at ammonia-air flame conditions

Abstract Self-consistent 1D modeling of streamers in ammonia-oxygen-nitrogen-water mixtures has been performed in this work. A fluid model that includes species transport, electrostatic potential, and detailed chemistry was developed and verified. This model is then used to simulate the avalanche, streamer formation and propagation phases, driven by a nanosecond voltage pulse, at different thermochemical conditions derived from a 1D laminar premixed ammonia-air flame. The applicability of the Meek’s criterion in predicting the streamer inception location was successfully confirmed. Streamer formation and propagation duration were found to vary significantly with different thermochemical conditions, due to the difference in ionization rates. The thermochemical state also affected the breakdown characteristics which was tested by maintaining the background reduced electric field constant. Detailed kinetic analyses revealed the importance of O ( 1 D ) in the production of key radicals, such as O, OH, and NH 2 . Furthermore, the contributions of the dissociative electronic excitation of NH 3 towards the production of H and NH 2 radicals have also been reported. Spatial and temporal evolution of the electron energy loss fractions for various inelastic collision processes at different thermochemical states uncovered the input plasma energy spent of fuel dissociation and the large variability in the dominant processes during the avalanche and streamer propagation phases. The methodology and analyses reported in this work are key towards developing effective strategies for controlled nanosecond-pulsed non-equilibrium plasma sources used for ammonia ignition and flame stabilization.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Assessment of MQXF Quench Heater Insulation Strength and Test of Modified Design

The HL-LHC interaction region magnet triplets (Q1,Q2, and Q3) will be composed of superconducting Nb 3 Sn quadrupoles. The MQXF quadrupole protection system is based on CLIQ (Coupling-Loss Induced Quench system) and outer layer quench heaters. Furthermore, this paper reports a summary of quench heaters to coil high voltage tests performed on MQXF short and long coils in air after fabrication, and in air and He gas after magnet training. Breakdown voltage values demonstrate good margin with respect to the Electrical design criteria for the HL-LHC inner triplet mag-nets. A modification in the quench heater installation-with an extra layer of fiber glass between the coil and the quench heater trace-has been proposed and tested in a mirror magnet to further increase electrical margins. Results demonstrated improvements of high voltage margin at the expense of a clear increase of hot spot temperature.The baseline heater to coil insulation was assessed to be able to guarantee safe operation for the Nb 3 Sn quadrupole magnets for the interaction regions of HL-LHC.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

DC electric field generation and distribution in magnetized plasmas

Very large DC and AC electric fields cannot be sustained between conducting electrodes because of volume gas breakdown and/or surface field emission. However, very large potential fields are now routinely generated in plasma structures, such as laser generated wake in unmagnetized plasmas. In magnetized plasmas, large DC fields can also be sustained and controlled perpendicular to the magnetic field, but the metallic end plates limiting the plasma, terminating the magnetic field lines, and usually providing the voltage drop feed between the field lines impose severe restrictions on the maximum field. However, it is shown that very large radial DC voltage drops can be sustained by injecting waves of predetermined frequencies and wave vectors, traveling along the azimuthal direction of an axially magnetized plasma cylinder, or by injecting fast neutral particles beams along this azimuthal direction. The large conductivity along the magnetic field lines and the small conductivity between the field lines then distribute this voltage drop. Furthermore, the global power balance and control parameters of wave and beam generated large DC electric fields in magnetized plasmas are identified, described, and analyzed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Formation of field-induced breakdown precursors on metallic electrode surfaces

Understanding the underlying factors responsible for higher-than-anticipated local field enhancements required to trigger vacuum breakdown on pristine metal surfaces is crucial for the development of devices capable of withstanding intense operational fields. In this study, we investigate the behavior of nominally flat copper electrode surfaces exposed to electric fields of hundreds of MV/m. Our novel approach considers curvature-driven diffusion processes to elucidate the formation of sharp breakdown precursors. To do so, we develop a mesoscale finite element model that accounts for driving forces arising from both electrostatic and surface-tension-induced contributions to the free energy. Our findings reveal a dual influence: surface tension tends to mitigate local curvature, while the electric field drives mass transport toward regions of high local field density. This phenomenon can trigger the growth of sharper protrusions, ultimately leading to a rapid enhancement of local fields and, consequently, to a runaway growth instability. We delineate supercritical and subcritical regimes across a range of initial surface roughness. Our numerical results are in qualitative agreement with experimentally reported data, indicating the potential practical relevance of field-driven diffusion in the formation of breakdown precursors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy

The eXciton Franz–Keldysh (XFK) effect is observed in GaN p–n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the line shape and the local bias (V l ), uniquely determining the local electric field maximum and depletion widths. As expected, the spectrally determined values of V l vary linearly with the applied bias (V) and reveal a large reduction in the local electric field due to electrostatic non-uniformity. The built-in bias (V bi ) is estimated by extrapolating V l at V=0, which, when compared with independent C-V measurements, indicates an overall ±0.31 V accuracy of V l . This demonstrates sub-bandgap photocurrent spectroscopy as a local probe of electric field in wide bandgap diodes that can be used to map out regions of device breakdown (hot spots) for improving electrostatic design of high-voltage devices.

42 ENGINEERING↗
DOE OSTI2020

Electrically Detected Magnetic Resonance Study of High-Field Stress Induced Si/SiO 2 Interface Defects.

It is widely accepted that the breakdown of Si0 2 gate dielectrics is caused by the buildup of stress-induced defects over time. Although several physical mechanisms have been proposed for the generation of these defects, very little direct experimental evidence as to the chemical and physical identity of these defects has been generated in the literature thus far. Here, we present electrically detected magnetic resonance (EDMR) measurements obtained via spin-dependent recombination currents at the interface of high-field stressed Si/Si0 2 metal-oxide-semiconductor field effect transistors (MOSFETs).

36 MATERIALS SCIENCE↗
DOE OSTI2025

2 kV Al 0.64 Ga 0.36 N-channel high electron mobility transistors with passivation and field plates

Abstract High voltage (∼2 kV) Al 0.64 Ga 0.36 N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm 2 ). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si 3 N 4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.

Alam, Md Tahmidul (ORCID:000900086556839X)↗
DOE OSTI2024

1D Simulation of Avalanche to Streamer to Spark Transition of Plasma Discharge in Ammonia-Air Combustion

The backward problem of plasma assisted combustion emphasizes evaluating the effect of the evolving thermochemical state on the plasma discharge. This paper investigates the dependence of avalanche to streamer to spark formation dynamics and kinetics on the gas composition and temperature at different points in an ammonia-air premixed laminar flame using a self-consistent multigrid-based 1D plasma solver. Different values of ..alpha.., the coefficient for effective ionization events per unit length, have been reported for electron avalanches in air and stoichiometric NH3-air mixtures. The streamer inception has been shown to obey the Meek's criterion. An exponential reduction in streamer and spark formation time has been observed from plasma simulations at different points in the unburnt, pre-heat zone, reaction zone and the fully burnt regions of the premixed flame. While the enhancement of the reduced electric field with increasing temperature affects effective ionization, there exists a minimum breakdown field for streamer formation, which does not vary proportionally with the changing number density of the gas. The change in the mixture from reactants (NH3, O2, N2) to products of complete combustion of ammonia in air (N2, H2O) has also been shown to affect the streamer and spark formation. Finally, the major pathways during the streamer and spark phases which are responsible for producing important radicals used in combustion of NH3 are also discussed.

ADVANCED PROPULSION SYSTEMS,INORGANIC, ORGANIC, PH↗
DOE OSTI2022

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

We characterized the electric field distribution of GaN-on-GaN p–n diodes with partially compensated ion-implanted edge termination (ET) using an electric field induced second harmonic generation technique (EFISHG). The distributed electric field from the anode to the outer edge of the ET demonstrates the effectiveness of the ET structure. However, EFISHG also shows that its effectiveness is strongly dependent on the acceptor charge distribution in the ET's partially compensated layer (PC). A generally lower amount of acceptor charge can be inferred from the measured electric field distribution resulting from excessive ion implantation energy or dose during ET fabrication and causing lower than optimal breakdown voltage. Localized field crowding can be observed when the remaining acceptors uncompensated by the implant in the PC layer are nonuniformly distributed around the periphery of the devices. Important information can be obtained from these direct electric field measurements and used for optimizing the device design and fabrication process.

Cao, Yuke↗
DOE OSTI2020

Interactions between atmospheric pressure plasmas and metallic catalyst particles in packed bed reactors

Atmospheric-pressure plasmas sustained in packed bed reactors (PBRs) are being investigated for chemical conversion of gases and pollution control. Metallic catalysts added to the surfaces of the dielectric beads of PBRs can increase the energy efficiency and selectivity of chemical processes by reducing operating temperature and providing additional reaction pathways. In this paper, results from a computational investigation of plasma surface interactions between micron-scale metallic catalysts and humid-air plasmas in PBRs are discussed. Here we found that high plasma density regions form in the proximity of the metallic catalysts. These higher-density plasma regions were confirmed experimentally using ICCD imaging. The intense plasmas result from geometrical electric field enhancement and redistribution of charges within the conductive particles, leading to further enhancement. The high electric field at the triple points of the catalysts can produce electric field emission of electrons, which provides a pre-ionization source or additional source of electrons. These regions of high electric field and sources of electrons guide discharges towards the catalysts and increases fluxes of excited species, ions, electrons and photons to their surfaces. These fluxes are focused primarily at the triple points between the metal, dielectric and gas. As a result, the catalyst is locally heated, which could lead to further increased rates of thermocatalytic reactions on the surface. Surface roughness of the metal inclusions can lead to additional electric field enhancement, which changes the character of the discharges in the vicinity of the catalysts while reducing breakdown voltage.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

94 GHz microplasma sustained by a photonic crystal

A photonic crystal (PhC) with a single vacancy sustains an argon microplasma at 94 GHz. The PhC consists of a 7 × 13 array of small alumina rods, each 250 μm in radius. The PhC has a forbidden bandgap from 70–105 GHz. The vacancy creates an internal electromagnetic resonance at 94 GHz that intensifies the electric field of an incident wave to 5 × 10 5 V m –1 . Breakdown of low-pressure argon gas (80 mbar) occurs and forms a stable, ellipsoidal plasma inside the crystal. The central core of the microplasma is probed using a 200 μm optical fiber inserted into the PhC. The rotational temperature of the CH molecule is estimated from a numerical fit of the plasma emission and is found to increase from 450–650 K with both pressure (200–1000 mbar) and incident wave power (100 mW–1100 mW). Under these conditions, the electron density increases with both power and pressure from 0.5–1.5 × 10 20 m –3 . Furthermore, this plasma density range brackets the electron plasma frequency at 94 GHz. The results are compared with a similar microplasma operating at 44 GHz.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Microfabricated Ion Traps on Sapphire for Larger Trap Areas and Higher Qubit Count

Surface ion traps are a promising platform for quantum computing due to their potential to store large numbers of ions that can be addressed by electrical and optical control signals in order to implement quantum algorithms. Increasing the power of the quantum computer requires increasing the number of ions, but this poses a significant challenge in that it leads to a non-linear increase in on-chip power dissipation. The primary contributor to this power scaling in current devices is the capacitance between the radio frequency (RF) electrode and the metal plane that shields the silicon substrate from the RF signals applied to it. Silicon has traditionally been chosen for the substrate material for compatibility with the processing required for multi-metal-level traps. In this work, we address these capacitance and fabrication challenges by replacing the commonly used silicon substrate with an insulating sapphire substrate to fabricate a multi-metal-level ion trap, while still employing common semiconductor manufacturing techniques. This change in substrate allows the design to remove the metal shielding from the device design, reducing the capacitance of the RF electrode. The electrical characteristics of these traps were measured, specifically trap impedance, capacitance, and voltage breakdown, and compared to nearly identical silicon trap devices. Finally, we used laser cutting techniques to shape a sapphire wafer into bowtie shapes matching silicon traps previously fabricated at Sandia National Labs to explore solutions for integrating sapphire substrates into non-rectangular ion trap designs.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Adroit Materials Final Scientific/Technical Report kV-class GaN-based Junction Barrier Schottky diodes using ion implantation

The primary aim of this research was to develop GaN-based Junction Barrier Schottky (JBS) diodes using an innovative ion implantation process previously established in ARPA-E funded projects. The central focus of our proposed technology revolves around selective area p-type doping, accomplished through the implantation of Mg ions. This approach builds upon our successes in the ARPA-E PNDIODES program, advancing towards commercial device integration. Selective area p-doping plays a pivotal role in realizing the next generation of GaN-based power devices, capable of significantly reducing the carbon footprint in the United States by several million tons. While ion implantation is a well-established technique for achieving selective area doping in SiC and Si materials, its feasibility in GaN had not been demonstrated until now. To fabricate high voltage GaN JBS diodes, we initially created thick n-type drift layers with high carrier concentrations ranging from 5×1015 cm-3 to 2×1016 cm-3 and very high mobilities. Subsequently, Mg ions were selectively implanted to form p-type islands within the n-type drift layer. To reduce electric field crowding at the edge of the diode and to achieve high breakdown voltage, junction edge termination (JTE) and floating field rings (FFRs) were formed using Mg implantation. A high temperature, high-pressure post-implantation annealing process was carried out to activate the implanted Mg ions. As a result, we were able to demonstrate GaN JBS diodes with a breakdown voltage of 915 V and an on-resistance of 0.6 mΩ·cm2. These diodes exhibited a forward bias current density of 1 kA/cm2 at 1.5 V. Subsequently, we achieved GaN JBS diodes with a remarkable breakdown voltage of 1900 V and an on-resistance of 1.9 mΩ·cm2, capable of sustaining a forward bias current density of 0.5 kA/cm2 at 1.5 V. Importantly, the ON and OFF state performance of these GaN JBS diodes surpassed that of Si and SiC-based power diodes reported in existing literature. Lastly, we successfully grew 60 μm thick GaN:Si layers using HVPE with a carrier concentration of approximately 3 to 5×1015 cm-3. Based on simulation and empirical data these devices represent 5 kV GaN JBS power diodes, leveraging the developed processes in this project.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

Here we report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm 2 . The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV cm –1 . These results underline that high-performance GaN JBS can be realized using Mg implantation and high-temperature UHP post-activation anneal.

42 ENGINEERING↗
DOE OSTI2023

Uncovering microstructure and composition susceptibility of high permittivity ceramic granules to plasma-induced arc breakdown

Effective diversion of surge currents is vital to prevent unwanted damage to sensitive electronics. Among the most successful and efficient strategies relies on a dielectric stimulated arc breakdown mechanism with high permittivity ceramic granules in a spark-gap geometry. Although generally regarded as a self-healing process, substantial energy deposition may occur that, over time, diminishes the ability to withstand repeated electrical assaults. We investigate the susceptibility of lead–magnesium–niobate–lead titanate (PMN–PT) granule microstructure and composition changes following many exposures to high voltage impulses resulting in arc breakdown. Scanning electron microscopy and energy-dispersive spectroscopy mapping reveal a broad range of thermal and mechanical defects entailing thermal reduction of constituent PMN–PT metal ions and recasting due to rapid eruption of volatile species. Additionally, evidence of local melting and microcracking are apparent that can have deleterious impact on the proper function of the granules, namely, the ability to concentrate electric fields across air gaps to establish and sustain discharge pathways. We propose that the localized nature of damage and stochasticity associated with the dielectric stimulated breakdown mechanism may allow granules to maintain functionality provided no permanent conduction paths are established.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Shaped Beams from Diamond Field-Emitter Array Cathodes

Diamond field-emitter arrays (DFEAs) are arrays of diamond pyramids with exquisitely sharp tips and micrometer-scale bases that produce high current densities. These arrays can be fabricated in arbitrary shapes, ranging from single tips to many millions of tips, so that they produce an inherently shaped electron beam. Each tip emits a modest current, but the large dense array can produce many Amps. We are investigating these cathodes for use in dielectric wakefield accelerators; however, they may also be applicable to vacuum microwave tubes. Recently, shaped beam production and transport have been demonstrated in the 1.3-GHz RF gun at the Argonne Cathode Test Stand at the Argonne National Laboratory. The charge was measured on a Faraday cup and the beam imaged on a YAG screen with peak electric field gradients on the cathode ranging from 12 to 35 MV/m. Three cathode geometries were tested: one 1-mm equilateral triangle with 7-mu m base pyramids and 10-mu m pitch, one 1-mm equilateral triangle with 10-mu m base and 25-mu m pitch, and one sparse 5 x 5 square array with 20-mu m base and 400-mu m pitch. The two triangular arrays emitted 35 nC in an RF macropulse at 35 MV/m and 13-nC charge at 27 MV/m, respectively, while the sparse array emitted 0.060-nC charge at 15 MV/m. This article presents the results of the triangular array experiments, including damage due to breakdown in the RF gun and initial models of tip-to-tip shielding.

Cathodes↗