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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Aliovalent gallium dopants remove Ti 3+ defects and improve photocatalytic and photoelectrochemical water oxidation properties of LaTiO 2 N

LaTiO 2 N is a promising semiconductor for the water splitting reaction due to its 2.1 eV band gap and stability against corrosion. However, its solar energy conversion is limited by Ti 3+ recombination defects introduced during ammonolysis. Here we show for the first time that Ti 3+ defects in LaTiO 2 N can be suppressed with incorporation of 2, 5, and 10% aliovalent gallium (Ga 3+ ) dopants during synthesis via the layered La 2 Ti 2 O 7 intermediate. Electron paramagnetic resonance (EPR) spectroscopy on the solid powders confirms a reduction in the Ti 3+ donor density from 2.97 × 10 17 cm −3 for the non-doped material to ∼6.24 × 10 16 cm −3 for 5% Ga-doped LaTiO 2 N. The remaining Ti 3+ defects are concentrated near the LaTiO 2 N surface, according to X-ray photoelectron spectroscopy. The defect reduction shifts the optical absorption edge from 2.02 to 2.09 eV and eliminates a broad absorption band at 1050 nm from the optical absorption spectra. It also removes a 1.0–1.7 eV sub-band gap photovoltage signal from surface photovoltage spectra. This suggests that empty Ti 3+ d-orbitals are located 1.0–1.7 eV above the LaTiO 2 N valence band edge. Removing these recombination states with increasing Ga 3+ content enhances the photoconversion efficiency of LaTiO 2 N during water oxidation. The optimized 2 wt% CoO x -loaded 5% Ga-doped LaTi O2 N material has a 16% AQE (400 nm) for O 2 production from aqueous silver nitrate solution and a ∼2.1 mA cm −2 water oxidation photocurrent at 1.23 V under 100 mW cm −2 Xe arc lamp illumination. The water oxidation photocurrent is stable during a 50 min test, and the Faraday efficiency for O 2 generation is 97%, confirming short-term corrosion stability of LaTiO 2 N. Altogether, these results provide a better understanding of the distribution, concentration, and impact of Ti 3+ defects on the optical, photovoltage, and photoelectrochemical properties of LaTiO 2 N. In combination with other defect control strategies, aliovalent Ga 3+ doping can help bring the solar energy conversion efficiency of LaTiO 2 N closer to the theoretical limit.

Wang, Li [University of California, Davis, CA (Uni↗
DOE OSTI2024

Iron dopant energy levels in β-Ga 2 O 3

The energetic positions of the two Fe dopant levels in the bandgap of β-Ga 2 O 3 are determined to be at 3.05(±0.05) and 3.85(±0.05) eV below the conduction band minimum from transmission measurements employing a sub-picosecond tunable ultraviolet laser radiation source. A further measurement of the quantum efficiency of photoelectron emission from the Fe:Ga 2 O 3 (010) photocathode is consistent with the obtained absorption data and a dominant optical phonon assisted Franck–Condon emission mechanism, while also providing an estimate of 100 ps for the conduction band electron lifetime.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing

Single-crystal model systems are valuable tools to investigate fundamental material properties. In this work, we use molecular beam epitaxy to deposit in situ arsenic (As) doped single-crystal CdTe films on large area Si substrates to better understand As doping for photovoltaic applications. We found that As incorporation is highly temperature dependent: a substrate temperature difference of 50 °C can lead to several orders of magnitude difference in As concentration. Cd overpressure during in situ doping may limit out-diffusion of As but decrease As incorporation, especially at lower growth temperatures. Carrier concentrations greater than 10 16 cm −3 can be achieved with or without Cd overpressure when annealed at temperatures above 500 °C. However, unlike the low (∼1% to 5%) dopant activation commonly observed in polycrystalline CdTe, our films achieve significantly higher activation ratios—exceeding 50%, and in some cases approaching 80%. These values are consistent with or exceed prior reports in single-crystal CdTe systems. In addition to as-deposited arsenic concentrations, we also consider arsenic distribution after different rapid thermal processing temperatures. We propose a detailed definition and description of how arsenic incorporation is considered and calculated. Due to carrier concentration saturation, As incorporation also needs to be controlled to average levels of 10 17 cm −3 to achieve high activation. These findings suggest that higher annealing temperature regimes may be beneficial to polycrystalline CdTe based PV devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Al-alkyls as acceptor dopant precursors for atomic-scale devices

Atomically precise ultradoping of silicon is possible with atomic resists, area-selective surface chemistry, and a limited set of hydride and halide precursor molecules, in a process known as atomic precision advanced manufacturing (APAM). It is desirable to expand this set of precursors to include dopants with organic functional groups and in this work we consider aluminium alkyls, to expand the applicability of APAM. We explore the impurity content and selectivity that results from using trimethyl aluminium and triethyl aluminium precursors on Si(001) to ultradope with aluminium through a hydrogen mask. Comparison of the methylated and ethylated precursors helps us understand the impact of hydrocarbon ligand selection on incorporation surface chemistry. Combining scanning tunneling microscopy and density functional theory calculations, we assess the limitations of both classes of precursor and extract general principles relevant to each.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Analysis of useful ion yield for the Mg dopant in GaN by quadrupole—SIMS

The authors present a quantitative secondary ion mass spectrometry (SIMS) analysis of the useful ion yield of magnesium dopant in a gallium nitride matrix. A quadrupole SIMS instrument was used to analyze an Mg-doped GaN sample grown by metal organic chemical vapor deposition. Oxygen (O2+) was used as the primary ion beam and its energy was varied in the range from 0.5 to 5 kV with and without oxygen flooding near the sample. The results of the analysis can be used to determine the primary beam energies for optimal magnesium sensitivity.

Senevirathna, M. K. Indika (ORCID:0000000243575029↗
DOE OSTI2020

Diagnosing Field Strengths and Plasma Conditions in Magnetically Insulated Transmission Lines Using Active Dopant Spectroscopy

Experimental validation data is needed to inform simulations of large pulsed power devices which are in development to understand and improve existing accelerators and inform future pulsed power capabilities. Using current spectroscopic techniques on the Z-machine, we have been unable to reliably diagnose plasma conditions and electric and magnetic fields within power flow regions. Laser ablation of a material produces a low density plasma, resulting in narrow spectroscopic line widths. By introducing a laser ablated plasma to the anode cathode gap of the Mykonos accelerator, we can monitor how the line shapes change due the current pulse by comparing these line shapes to spectral measurements taken without power flow. In this report we show several examples of measurements conducted on Mykonos on various dopant materials. We also show a negligible effect on power flow due to the presence of the ablation plasma for a range of parameters.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Temperature and dopant concentration effects on proton light quenching in rare-earth inorganic scintillators [Slides]

Rare-earth inorganic scintillators have characteristics that offer optimal detection qualities for space applications as long a quenching is considered; Incident proton and electron response was measured in four different rare-earth inorganic scintillators of interest; We observed: A temperature effect on quenching for GAGG type detectors. A dopant concentration/decay time effect on quenching for GAGG detectors; Extracting the Birks’ factor for future detectors will improve the analysis of data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

A Multifidelity and Multimodal Machine Learning Approach for Extracting Bonding Environments of Impurities and Dopants from X-ray Spectroscopies

Extended X-ray absorption fine structure (EXAFS) spectroscopy is crucial for determining the coordination environment of impurities and dopants; however, it requires difficult measurements. X-ray absorption near edge structure (XANES) spectroscopy and X-ray emission spectroscopy (XES) can be obtained easily but cannot be converted to determine structures. In this work we develop tools to map measured XANES to the EXAFS signal through machine learning, thereby facilitating the use of EXAFS structural-determination analyses on XANES data. Through the use of Deep Operator Networks (DeepONets), we are able to accurately predict the EXAFS spectrum between 6 and 14 Å -1 from the first 6 Å -1 (~100 eV) of the absorption spectrum of Cu 2+ substitutional defects in the Fe 3+ mineral hematite (a-Fe 2 O 3 ). This surprising finding implies that theoretical analyses of X-ray absorption spectra could be implemented that extract the same conclusions as high-quality EXAFS studies from spectra collected over a much smaller range of photon energies. To encourage similar efforts, the simulated x-ray spectra, machine learning, and fitting code is made publicly available.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

R&D for LAr + Xe + photosensitive dopants

LArTPCs are the technology of choice for current and future neutrino experiments, including those expected to make eagerly awaited measurements of accelerator neutrino oscillations in the coming decade. This technology provides a large active volume and sensitivity to GeV signals like accelerator neutrinos all the way down to 10s of MeV, covering part of the supernova neutrino spectrum.Expanding the reach of LArTPCs to below the 10 MeV range would substantially enhance the flagship analyses of experiments like DUNE, while potentially enabling the physics of solar neutrinos, dark matter searches, and neutrinoless double beta decay searches.We outline the R&D pathway for photosensitive dopants, whose introduction into the LAr active medium, has the potential to substantially increase ionization yields of LAr detectors and enable the detection of low energy signals in large LArTPCs. This R&D program will demonstrate the feasibility and impacts of introducing doped LAr into current and future neutrino detectors at the kTon scale including the Xenon + photosensitive doping strategy.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

The Influence of Transitional Metal Dopants on Reducing Chlorine Evolution during the Electrolysis of Raw Seawater

Electrocatalytic water splitting is a possible route to the expanded generation of green hydrogen; however, a long-term challenge is the requirement of fresh water as an electrolyzer feed. The use of seawater as a direct feed for electrolytic hydrogen production would alleviate fresh water needs and potentially open an avenue for locally generated hydrogen from marine hydrokinetic or off-shore power sources. One environmental limitation to seawater electrolysis is the generation of chlorine as a competitive anodic reaction. This work evaluates transition metal (W, Co, Fe, Sn, and Ru) doping of Mn-Mo-based catalysts as a strategy to suppress chlorine evolution while sustaining catalytic efficiency. Electrochemical evaluations in neutral chloride solution and raw seawater showed the promise of a novel Mn-Mo-Ru electrode system for oxygen evolution efficiency and enhanced catalytic activity. Subsequent stability testing in a flowing raw seawater flume highlighted the need for improved catalyst stability for long-term applications of Mn-Mo-Ru catalysts. This work highlights that elements known to be selective toward chlorine evolution in simple oxide form (e.g., RuO2) may display different trends in selectivity when used as isolated dopants, where Ru suppressed chlorine evolution in Mn-based catalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1972

Dopant precipitation in silicon-germanium alloys.

The model commonly used to describe dopant precipitation in silicon-germanium alloys is discussed. The results of an experimental program are fit to the model in order to determine the long-term behavior of the thermoelectric properties of the n-type 80 at. % Si/20 at. % Ge alloy. Thermoelectric property projections to twelve years of operating time are given.

Raag, V.↗
NASA NTRS1978

Ionized dopant concentrations at the heavily doped surface of a silicon solar cell

Data are combined with concentrations obtained by a bulk measurement method using successive layer removal with measurements of Hall effect and resistivity. From the MOS (metal-oxide-semiconductor) measurements it is found that the ionized dopant concentration N has the value (1.4 + or - 0.1) x 10 to the 20th power/cu cm at distances between 100 and 220 nm from the n(+) surface. The bulk measurement technique yields average values of N over layers whose thickness is 2000 nm. Results show that, at the higher concentrations encountered at the n(+) surface, the MOS C-V technique, when combined with a bulk measurement method, can be used to evaluate the effects of materials preparation methodologies on the surface and near surface concentrations of silicon cells.

Weinberg, I.↗
NASA NTRS1983

Quantum-chemical modeling of boron and noble gas dopants in silicon

The electron effects of the presence of boron and noble gas dopants in a model silicon lattice were investigated using a self-consistent charge extended Hueckel program. The extent of electronic interaction of the noble gas with the lattice is given by: Kr greater than Ar greater than Ne. Theoretically, boron diffusion in the presence of neon, argon or krypton was examined using a self-consistent charge extended Hueckel program. The net energy of interaction between boron and neon is strongly repulsive while argon-boron exhibits a region of relative stability; krypton exhibits behavior similar to argon though no region of stability was found for the range of separations used in the calculations. Finally, it is noted, from the relative energy of the topmost filled molecular orbital associated with boron (in an interstitial position), that activation of the boron does not require boron movement but can be accomplished by indirect transitions.

Aronowitz, S.↗
NASA NTRS1985

Dopant effect of yttrium and the growth and adherence of alumina on nickel-aluminum alloys

The atom superposition and electron delocalization molecular orbital theory and large cluster models have been employed to study cation vacancy diffusion in alpha-Al2O3 and the bonding of alpha-Al2O3 to nickel, aluminum, and yttrium surfaces. Al(3+) diffusion barriers in alpha-Al2O3 by the vacancy mechanism are in reasonable agreement with experiment. The barrier to Y(3+) diffusion is predicted to be much higher. Since addition of yttrium to transition metal alloys is known to reduce the growth rate and stress convolutions in protective alumina scales, this result suggests the rate-limiting step in scale growth is cation vacancy diffusion. This may partially explain the beneficial effect of yttrium dopants on scale adhesion. The theory also predicts a very strong bonding between alumina and yttrium at the surface of the alloy. This may also be important to the adhesion phenomenon. It is also found that aluminum and yttrium atoms bond very strongly to nickel because of charge transfer from their higher lying valence orbitals to the lower lying nickel s-d band.

Anderson, A. B.↗