Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 145 records · Page 8

Thermal Stress Reduction in Power Switching Devices Using Distributed Loss PWM Concept for Current Source Inverters

A new modulation scheme is proposed for current source inverters (CSIs) that reduces the variation and peak junction temperature in the CSIs' power devices. The distributed loss pulse-width modulation (DLM) concept is introduced and applied to traditional space vector modulation methods to develop modified modulation schemes that reduce the thermal stress on power devices. The device junction temperatures resulting from conventional and DLM schemes are compared. Simulation and experimental results confirm that the proposed DLM concept reduces thermal stress on the devices while maintaining the same high output current waveform quality compared to traditional CSI modulation schemes. The CSI power device lifetime (i.e., the number of cycles to failure) are estimated using the simulation and experimental results. The proposed DLM significantly increases the device lifetime (by 5 to 6 times) by reducing the junction temperature variation compared to the conventional modulations.

42 ENGINEERING↗

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗

The effect of blood viscosity on shear‐induced hemolysis using a magnetically levitated shearing device

Abstract Introduction Blood contacting medical devices, including rotary blood pumps, can cause shear‐induced blood damage that may lead to adverse effects in patients. Due in part to an inadequate understanding of how cell‐scale fluid mechanics impact red blood cell membrane deformation and damage, there is currently not a uniformly accepted engineering model for predicting blood damage caused by complex flow fields within ventricular assist devices (VADs). Methods We empirically investigated hemolysis in a magnetically levitated axial Couette flow device typical of a rotary VAD. The device is able to accurately control the shear rate and exposure time experienced by blood and to minimize the effects of other uncharacterized stresses. Using this device, we explored the effects of both hematocrit and plasma viscosity on shear‐induced hemolysis to characterize blood damage based on the viscosity‐independent shear rate, rather than on shear stress. Results Over a shear rate range of 20 000 – 80 000 1/s, the Index of Hemolysis (IH) was found to be dependent upon and well‐predicted by the shear rate alone. IH was independent of hematocrit, bulk viscosity, or the suspension media viscosity and less correlated to shear stress (MSE = 0.46–0.75) than to shear rate (MSE = 0.06–0.09). Conclusion This study recommends that future investigations of shear‐induced blood damage report findings with respect to the viscosity‐neutral term of shear rate, in addition to the bulk whole blood viscosity measured at an appropriate shear rate relevant to the flow conditions of the device.

Krisher, James A.↗

Structural breakdown in high power GaN-on-GaN p-n diode devices stressed to failure

The morphology of GaN-on-GaN vertical p-i-n diode devices after reverse-bias electrical stressing to breakdown has been investigated. All failed devices had irreversible structural damage, showing large surface craters that were ∼15–35 μm deep with lengthy surface cracks. Cross-sectional electron micrographs of failed devices showed substantial concentrations of threading dislocations around the cracks and near the crater surfaces. Progressive ion-milling across damaged devices revealed high densities of threading dislocations and the presence of voids beneath the surface cracks; these features were not observed in any unstressed devices. These results should serve as a useful reference for future reliability studies of vertical high-power GaN devices.

Peri, Prudhvi (ORCID:000000022338441X)↗

Characterization and Analysis of the Energy-Reporting Accuracy of Connected Devices

Emerging energy-efficient building systems increasingly exhibit greater functionality, often requiring multiple operating modes (e.g. white-tunability for lighting products and data traffic for devices with networked, integrated sensors). This increased functionality makes energy consumption estimates more complex. Given that these functions consume energy, the energy performance of such building systems is dependent on what operating modes they use and how much time they spend in each mode. Devices and systems that can report their own energy consumption mitigate this energy-performance uncertainty. This study explores the energy-reporting accuracy of market-available connected electrical outlets. The study considers two residential-market products (five units each, one outlet per unit) and three commercial-market products (two units each, 18 to 24 outlets per unit) with the ability to report power drawn and/or energy consumed by devices connected to their receptacles. The products were purchased through typical market channels. Pacific Northwest National Laboratory (PNNL) conducted testing in December 2018 at its Connected Lighting Test Bed (CLTB), using a custom-developed test setup and method adapted from industry standards. The setup collected energy-consumption data reported by the outlet devices under test (DUTs) at one-minute intervals and compared that data with measurements taken by a reference meter over a range of test conditions. The residential products reported power draw but not interval or cumulative energy consumption. The commercial products reported both power draw and cumulative energy consumption. Relative reporting error (RRE) was calculated for all measurements, and analysis of the results revealed variations across devices and test conditions. The total number of measurements (50 for each residential product, 60 for each commercial product) offers an appreciable comparison of performance at the make/model level. The average RRE of the residential products derived from reported power draw was -0.02% and -1.20%. The average RRE for two of the three the commercial products derived from reported power draw was worse than those of the residential products (-2.40%, -2.72%, -0.36%). The internal integration of power over time, used to calculate cumulative energy consumption, typically occurs at current and voltage sampling rates much higher than once per minute. This suggests that the average commercial-product RRE derived from reported energy consumption should be very consistent and better than performance based on reported power draw. However, the RRE derived from reported energy consumption varied significantly across the three makes of commercial-market products and was uniformly less accurate than performance based on reported power draw. Subsequent analysis identified a number of root causes for this decrease in performance, most of which were related to reporting resolution. The goals of this study are to generate awareness of building systems capable of reporting their own energy consumption, further interest in the value of energy data for a variety of uses, draw attention to how the accuracy of reported metrics can be characterized, and quantify the performance variation found in marketavailable products. The results of this study and subsequent related work may be relevant to stakeholders in industry-specification and standards-development organizations. The methods this study employs could inform test and measurement procedures and performance classifications for connected outlets, lighting products, and other building systems capable of reporting their own energy consumption. The study concludes with stakeholder recommendations, including the following: • Energy-reporting device and system manufacturers developing products that report energy consumption should characterize the accuracy of reported metrics using a reference meter calibrated by an independent laboratory that was accredited by an ILAC MRA signatory (and whose scope of accreditation explicitly covers energy measurement), and should include this information on product data sheets. • Standards and specification development organizations should develop application-specific performance classifications that end users can understand and relate to their energy-data use needs (e.g., 2% accuracy class for utility streetlight energy billing needs, or 10% accuracy class for ESCO performance verification needs). • Current or potential owners, operators, and specifiers of energy-reporting building systems should rigorously analyze the dependency of current and planned energy-data use cases on accuracy, noting in particular the dependence (or lack thereof) on relative vs. absolute accuracy, and on trueness vs. precision (i.e., repeatability), and should communicate use-case needs to industry standards and specification organizations.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Countering Weapons of Mass Destruction Office (CWMD) Data Categorization Study: Chemical, Biological, Radiological, and Nuclear (CBRN) Detection Device Data

Pacific Northwest National Laboratory (PNNL) seeks to address critical questions related to chemical, biological, radiological, and nuclear (CBRN) detection devices. This research aims to enhance the security and understanding of these devices by investigating various aspects of their identification, communication, and functionality. The primary focus is on network security, malware detection, device identification, and intelligence gathering. CBRN data can be categorized in various ways depending on the purpose of CBRN detection devices and the specific context of the applications for analysis. Criteria that can be used to assist in this effort include but are not limited to data type, data protocol, source/destination, application, time, security, and content. This study will inform additional paths for data classification, data profiling, data mapping, and data modeling. This will help the Countering Weapons of Mass Destruction Office (CWMD) better understand their data and make informed decisions based on the insights gained from this study and their application. The CBRN Data Categorization study will include the identification of 5–10 different CBRN detection devices with unique characteristics for assessing and analyzing the data that is being produced by and transmitted from these devices.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗

Heavy-Duty Hydrogen Station Equipment Performance Device (HD HyStEP) Specifications and Design Considerations

The original Hydrogen Station Equipment Performance (HyStEP) device was commissioned in 2015 and was critical for the rapid validation of light-duty (LD) hydrogen fueling stations. As applications for hydrogen as a heavy-duty (HD) transportation fuel continue to grow, new heavy-duty stations are being developed to fuel these vehicles that require larger onboard storage tank systems to meet HD transportation demands and drive cycles. The differences in size and geometry from LD vehicles have driven the creation of new hydrogen fueling protocols that will enable safe and economical fueling of HD vehicles. With the new requirements that are set out in HD fueling protocols like SAE J601-5, a new HyStEP-like device is needed to evaluate the capabilities of high-flow hydrogen stations to fuel HD vehicles to the new protocol standard. To create a heavy-duty HyStEP (HD HyStEP) device, an effort has been undertaken to evaluate the requirements that would form the basis for the design of a successful HD HyStEP device. The primary design goal of this HD HyStEP device is its capability of following a test methodology similar to what is outlined in CSA HGV 4.3, which guides the validation of LD fueling dispensers but with adjustments to verify adherence to the HD fueling protocols (SAE J2601-5) for 70 MPa and 35 MPa pressure class vehicles rather than the LD fueling protocols (SAE J2601). The design presented here aims to provide information that enables the creation of an HD HyStEP device that achieves the primary design goal while being informed by the years of experience from the current HyStEP operators.

08 HYDROGEN↗

Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs)

Molecular spintronics devices (MSDs) attempt to harness molecules’ quantum state, size, and configurable attributes for application in computer devices—a quest that began more than 70 years ago. In the vast number of theoretical studies and limited experimental attempts, MSDs have been found to be suitable for application in memory devices and futuristic quantum computers. MSDs have recently also exhibited intriguing spin photovoltaic-like phenomena, signaling their potential application in cost-effective and novel solar cell technologies. The molecular spintronics field’s major challenge is the lack of mass-fabrication methods producing robust magnetic molecule connections with magnetic electrodes of different anisotropies. Another main challenge is the limitations of conventional theoretical methods for understanding experimental results and designing new devices. Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting paramagnetic molecules across an insulating tunneling barrier. The insulating tunneling barrier serves as a mechanical spacer between two ferromagnetic (FM) electrodes of tailorable magnetic anisotropies to allow molecules to undergo many intriguing phenomena. Our experimental studies showed that the paramagnetic molecules could produce strong antiferromagnetic coupling between two FM electrodes, leading to a dramatic large-scale impact on the magnetic electrode itself. Recently, we showed that the Monte Carlo Simulation (MCS) was effective in providing plausible insights into the observation of unusual magnetic domains based on the role of single easy-axis magnetic anisotropy. Here, we experimentally show that the response of a paramagnetic molecule is dramatically different when connected to FM electrodes of different easy-axis anisotropies. Motivated by our experimental studies, here, we report on an MCS study investigating the impact of the simultaneous presence of two easy-axis anisotropies on MTJMSD equilibrium properties. In-plane easy-axis anisotropy produced multiple magnetic phases of opposite spins. The multiple magnetic phases vanished at higher thermal energy, but the MTJMSD still maintained a higher magnetic moment because of anisotropy. The out-of-plane easy-axis anisotropy caused a dominant magnetic phase in the FM electrode rather than multiple magnetic phases. The simultaneous application of equal-magnitude in-plane and out-of-plane easy-axis anisotropies on the same electrode negated the anisotropy effect. Our experimental and MCS study provides insights for designing and understanding new spintronics-based devices.

42 ENGINEERING↗

Use of a 360-Degree Underwater Camera to Characterize Artificial Reef and Fish Aggregating Effects around Marine Energy Devices

Marine energy devices must be attached to the seafloor by their foundations, pilings, or anchors, and will have other parts in the water column like the devices themselves, mooring lines, and power export cables running along the seafloor. The installation and presence of these artificial structures will create physical changes that can disrupt or create new habitats, and potentially alter the behavior of mobile organisms such as fish around a device by attracting them to these new artificial reefs and fish aggregating devices. In this study, we tested a new approach for monitoring fish activity around a marine energy device anchor: a 360-degree underwater camera to keep the target (a wave energy converter’s anchor) in the field of view of the camera. The camera was deployed in three configurations (hand-held, tripod, video lander) at sites with different hydrodynamics and underwater visibilities. The video lander was the best configuration: very stable, versatile, and easy to handle. The 360-degree field of view enabled observing and counting fishes, which were more abundant at dusk than dawn or noon, around the anchor. Despite remaining challenges, 360-degree cameras are useful tools for monitoring animal interactions with marine energy devices.

360-degree camera↗

Dependence of alpha-particle-driven Alfven eigenmode linear stability on device magnetic field strength and consequences for next-generation tokamaks

Recently-proposed tokamak concepts use magnetic fields up to 12 T, far higher than in conven- tional devices, to reduce size and cost. Theoretical and computational study of trends in plasma behavior with increasing field strength is critical to such proposed devices. This paper considers trends in Alfven eigenmode (AE) stability. Energetic particles, including alphas from D-T fusion, can destabilize AEs, possibly causing loss of alpha heat and damage to the device. AEs are sensitive to device magnetic field via the field dependence of resonances, alpha particle beta, and alpha orbit width. We describe the origin and effect of these dependences analytically and by using recently- developed numerical techniques (Rodrigues et al. 2015 Nucl. Fusion 55 083003). The work suggests high-field machines where fusion-born alphas are sub-Alfvenic or nearly sub-Alfvenic may partially cut off AE resonances, reducing growth rates of AEs and the energy of alphas interacting with them. High-field burning plasma regimes have non-negligible alpha particle beta and AE drive, but faster slowing down time, provided by high electron density, and higher field strength reduces this drive relative to low-field machines with similar power densities. The toroidal mode number of the most unstable modes will tend to be higher in high magnetic field devices. The work suggests that high magnetic field devices have unique, and potentially advantageous, AE instability properties at both low and high densities.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Heating case for a portable electronic device

A case for an electronic device includes a housing for enclosing the electronic device and a removable heating device that may be placed in or on the housing for warming the electronic device without electricity from the electronic device. The removable heating device includes a pouch enclosing a supersaturated solution and a metal disk. The super saturated solution in the pouch undergoes an exothermic reaction when the disk is actuated.

Coulter, Joshua Oliver↗

Electromagnetic device having layered magnetic material components and methods for making same

A micro fabricated electromagnetic device and method for fabricating its component structures, the device having a layered magnetic core of a potentially unlimited number of alternating insulating and magnetic layers depending upon application, physical property and performance characteristic requirements for the device. Methods for fabricating the high performing device permit cost effective, high production rates of the device and its component structures without any degradation in device performance resulting from component layering.

Mehrotra, Vivek↗

Solid phase sampling device and methods for point-source sampling of polar organic analytes

Sampling devices for sampling an aqueous source (e.g., field testing of ground water) for multiple different analytes are described. Devices include a solid phase extraction component for retention of a wide variety of targeted analytes. Devices include analyte derivatization capability for improved extraction of targeted analytes. Thus, a single device can be utilized to examine a sample source for a wide variety of analytes. Devices also include an isotope dilution capability that can prevent error introduction to the sample analysis and can correct for sample loss and degradation from the point of sampling until analysis as well as correction for incomplete or poor derivatization reactions. The devices can be field-deployable and rechargeable.

Boggess, Andrew J.↗

Retiring environmental risks of marine renewable energy devices: The “habitat change” case

The installation, presence, operation, and decommissioning of marine renewable energy (MRE) devices inevitably alters the surrounding ocean habitats. These changes may include direct effects on the benthos from the installation or removal of foundations and anchors, changes in community composition on and near devices, artificial reef effects, and indirect effects such as alteration of the food web or facilitation of non-native, invasive species dispersal. Although there is no expectation that MRE devices affect marine environments differently than other anthropogenic ocean uses, regulators and stakeholders continue to have questions about potential negative impacts to species and habitats from development. Research studies and survey reports that inform our understanding of habitat changes related to MRE devices and associated equipment were compiled into an evidence base, sorted into categories of effects, and evaluated by a group of international experts to assess potential risk to habitats and biota from small numbers of MRE devices, as well as to identify knowledge gaps. These gaps were organized by category and divided up by relevance to consenting, research, or project development and monitoring responsibilities. Identifying these “known unknowns” allows for study design and collaboration from various perspectives to fill the knowledge gaps. Distribution of the evidence base and remaining uncertainties and knowledge gaps to the MRE community, coupled with new research, will help advance the MRE industry while resolving concerns about the potential risks of habitat change for small numbers of devices.

Hemery, Lenaig G.↗

Automated control of microfluidic devices based on machine learning

A system is provided to automatically monitor and control the operation of a microfluidic device using machine learning technology. The system receives images of a channel of a microfluidic device collected by a camera during operation of the microfluidic device. Upon receiving an image, the system applies a classifier to the image to classify the operation of the microfluidic device as normal, in which no adjustment to the operation is needed, or as abnormal, in which an adjustment to the operation is needed. When an image is classified as normal, the system may make no adjustment to the microfluidic device. If, however, an image is classified as abnormal, the system may output an indication that the operation is abnormal, output an indication of a needed adjustment, or control the microfluidic device to make the needed adjustment.

Giera, Brian↗

Methods and devices for fabricating and assembling printable semiconductor elements

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G.↗

Method of making a photovoltaic device on a substrate at high speed with perovskite solution

A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.

Christensen, Scott Kenneth↗

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗