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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

IR-doped ruthenium oxide catalyst for oxygen evolution

A method for preparing a metal-doped ruthenium oxide material by heating a mixture of a doping metal and a source of ruthenium under an inert atmosphere. In some embodiments, the doping metal is in the form of iridium black or lead powder, and the source of ruthenium is a powdered ruthenium oxide. An iridium-doped or lead-doped ruthenium oxide material can perform as an oxygen evolution catalyst and can be fabricated into electrodes for electrolysis cells.

Valdez, Thomas I.↗
DOE OSTI2022

Photoconductive charge trapping apparatus

Techniques, systems, and devices are disclosed for implementing a photoconductive device performing bulk conduction. In one exemplary aspect, a photoconductive device is disclosed. The device includes a light source configured to emit light; a crystalline material positioned to receive the light from the light source, wherein the crystalline material is doped with a dopant that forms a mid-gap state within a bandgap of the crystalline material to control a recombination time of the crystalline material; a first electrode coupled to the crystalline material to provide a first electrical contact for the crystalline material, and a second electrode coupled to the crystalline material to provide a second electrical contact for the crystalline material, wherein the first and the second electrodes are configured to establish an electric field across the crystalline material, and the crystalline material is configured to exhibit a substantially linear transconductance in response to receiving the light.

Sampayan, Stephen↗
DOE OSTI2020

Final Technical Report for DE-FG02-86ER45268

This work addresses several key issues for understanding the unusual superconductivity in IBS, already shown to be technologically useful materials. 1a). Are reactive gasses like fluorine, chlorine, or water vapor behaving simply as electron donors to cause the superconductivity (at T conset =21 K) in undoped IBS like BaFe 2 As 2 ? 1b). Does exposure to fluorine increase T c in electron-doped IBS materials that are underdoped, e. g. Ba(Fe 0.96 Co 0.04 ) 2 As 2 ? 1c). Can fluorine as a reactive electron-donor, with its relatively greater ease of introduction into the lattice, be used as a rapid tool to search for superconductivity in new materials under investigation? Method of investigation: Using electron probe microanalysis, x-ray photoemission spectroscopy, and dynamical mean field theory calculations, we found that fluorine substitutes for As in the BaFe 2 As 2 lattice, and should therefore behave as an electron donor. We will F-dope Ba(Fe 0.96 Co 0.04 ) 2 As 2 and several new compounds under investigation for superconductivity upon doping to determine fluorine’s effect. Potential impact: If – like for fluorine - a brief exposure to hydrogen indeed causes superconductivity to a depth of 10 microns, this technique could be useful in creating long lengths of superconducting tape without the chemical aggressiveness of fluorine. Using the F ion, which substitutes for As - away from the Fe planes, in underdoped IBS like Ba(Fe 0.96 Co 0.04 ) 2 As 2 may form optimally doped IBS with less impurity scattering of the superconducting Fe 3d electrons resulting in improved superconducting properties. Another potential impact is the speed of checking for superconductivity in new materials under investigation for superconductivity upon doping. 2. What are the effects of Be substitution into IBS, beginning with FeSe and its derivatives (FeSe 1-x S x and FeSe 1-x Te x ) and BaFe 2-x Co x As 2 ? Method of investigation: We recently succeeded in adding Be to the FeSe lattice and found, surprisingly, a factor of four improvement of the low temperature residual resistivity ratio, consistent with improved electronic ordering. Using single crystal x-ray diffraction and x-ray dispersive spectroscopy, determine the concentration and location of the Be dopant. Using resistivity, determine if there is improvement in the residual resistivity achieved by Be doping in the FeSe derivatives (using AlCl 3 :KCl flux growth) and Co-doped BaFe 2 As 2 (using self-flux single crystal growth). Measuring resistivity under strain, determine the changes of the nematic susceptibility at the structural ordering transition causes by the increase in electronic order caused by Be doping in FeSe. Potential impact: Further understanding of IBS, including FeSe which - under physical pressure - has a T c increase to 40 K and -prepared as a monolayer - has a T c reported to be over 100 K. 3. In collaboration, prepare light atom compounds involving Be and look for high pressure-induced superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Efficient electrosynthesis of hydrogen peroxide in neutral media using boron and nitrogen doped carbon catalysts

The two-electron electrocatalytic oxygen reduction reaction (2e - ORR) is a promising, sustainable, and efficient route for on-site and small-scale production of hydrogen peroxide (H 2 O 2 ) compared to the conventional anthraquinone oxidation process. Although heteroatom doped carbon materials are widely studied for the 2e - ORR, few studies have been conducted on the synergistic relationship between multiple doping elements on H 2 O 2 performance. Moreover, there is a lack of efficient and stable catalysts for H 2 O 2 electrosynthesis in neutral media. In this work, a series of boron and nitrogen co-doped carbon (BNC) catalysts are synthesized and assessed for the 2e - ORR in neutral pH electrolyte. Through X-ray photoelectron and absorption spectroscopy analyses, we characterize B–N–C moieties and correlate them with H 2 O 2 production performance. In rotating ring disk electrode measurements, BNC catalysts pyrolyzed at 900 °C exhibit H 2 O 2 Faradaic efficiency of ~70% and demonstrate excellent long-term stability over 10 hours of continuous operation. In a three-electrode flow cell, this catalyst achieves ~78% H 2 O 2 Faradaic efficiency and 0.9 mmol cm -2 h -1 productivity at 0.20 V vs. RHE, surpassing most previously reported carbon-based catalysts in neutral media. This work contributes fundamental insights into the role of boron and nitrogen heteroatom dopants toward 2e - ORR and highlights the practical viability of these catalysts for real world applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Higher-order nodal hinge states in doped superconducting topological insulator

Doped strong topological insulators are one of the most promising candidates to realize a fully gapped three-dimensional topological superconductor (TSC). In this Letter, we revisit this system and reveal a possibility for higher-order topology which was previously missed. We find that over a finite range of doping, the Fu-Berg superconducting pairing can give rise to both Majorana surface states and nodal hinge states. Interestingly, we observe the coexistence of surface and hinge modes in the superconducting state only when there are both bulk and surface Fermi surfaces in the normal state. Furthermore, we find that the hinge modes can appear for normal states consisting of doped strong or weak topological insulators. In summary, this work may allow for the discovery of superconducting hinge modes in a well explored class of materials, i.e., doped strong or weak topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2005

Depth-Penetrating Luminescence Thermography of Thermal- Barrier Coatings

A thermographic method has been developed for measuring temperatures at predetermined depths within dielectric material layers . especially thermal-barrier coatings. This method will help satisfy a need for noncontact measurement of through-the-thickness temperature gradients for evaluating the effectiveness of thermal- barrier coatings designed to prevent overheating of turbine blades, combustor liners, and other engine parts. Heretofore, thermography has been limited to measurement of surface and near-surface temperatures. In the thermographic method that is the immediate predecessor of the present method, a thermographic phosphor is applied to the outer surface of a thermal barrier coating, luminescence in the phosphor is excited by illuminating the phosphor at a suitable wavelength, and either the time dependence of the intensity of luminescence or the intensities of luminescence spectral lines is measured. Then an emissivity-independent surface-temperature value is computed by use of either the known temperature dependence of the luminescence decay time or the known temperature dependence of ratios between intensities of selected luminescence spectral lines. Until now, depth-penetrating measurements have not been possible because light of the wavelengths needed to excite phosphors could not penetrate thermal-barrier coating materials to useful depths. In the present method as in the method described above, one exploits the temperature dependence of luminescence decay time. In this case, the phosphor is incorporated into the thermal-barrier coat at the depth at which temperature is to be measured. To be suitable for use in this method, a phosphor must (1) exhibit a temperature dependence of luminescence decay time in the desired range, (2) be thermochemically compatible with the thermal-barrier coating, and (3) exhibit at least a minor excitation spectral peak and an emission spectral peak, both peaks being at wavelengths at which the thermal-barrier coating is transparent or at least translucent. Conventional thermographic phosphors are not suitable because they are most efficiently excited by ultraviolet light, which does not penetrate thermal- barrier coating materials. (Typical thermal-barrier coating materials include or consist of various formulations of yttria-stabilized zirconia.) Only a small fraction of phosphor candidates have significant excitation at wavelengths long enough (>500 nm) for sufficient penetration of thermal-barrier coatings. One suitable phosphor material . yttria doped with europium (Y2O3:Eu) . has a minor excitation peak at 532 nm and an emission peak at 611 nm. In experiments, this material was incorporated beneath a 100-microns-thick thermal-barrier coating and subjected to excitation and measurement by the luminescence-decay-time technique. These experiments were found to yield reliable temperature values up to 1,100 C. At the time of reporting the information for this article, a search for suitable phosphors other than (Y2O3:Eu) was continuing.

Eldridge, Jeffrey↗
DOE OSTI2023

Magnetic states of graphene proximitized Kitaev materials

Single-layer α-ruthenium trichloride (α–RuCl 3 ) has been proposed as a potential quantum spin liquid. Graphene/RuCl 3 heterobilayers have been extensively studied with a focus on the large interlayer electron transfer that dopes both materials. Here we examine the interplay between the competing magnetic state of RuCl 3 layer and graphene electronic properties. We perform self-consistent Hartree-Fock calculations on a Hubbard-Kanamori model of the 4d 5 t 2g electrons of α–RuCl 3 and confirm that out-of-plane ferromagnetic and zigzag antiferromagnetic states are energetically competitive. We show that the influence of hybridization between graphene and RuCl 3 bands is strongly sensitive to the magnetic configuration of RuCl 3 and the relative orientations of the two layers. We argue that strong hybridization leads to graphene magnetoresistance and that it may tilt the balance between closely competing magnetic states. Furthermore, Our analysis can be applied to any van der Waals heterobilayer system with weak interlayer hybridization and allows for arbitrary lattice constant mismatch and relative orientation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Intercalation as a versatile tool for fabrication, property tuning, and phase transitions in 2D materials

Recent advances in two-dimensional (2D) materials have led to the renewed interest in intercalation as a powerful fabrication and processing tool. Intercalation is an effective method of modifying the interlayer interactions, doping 2D materials, modifying their electronic structure or even converting them into starkly different new structures or phases. Herein, we discuss different methods of intercalation and provide a comprehensive review of various roles and applications of intercalation in next-generation energy storage, optoelectronics, thermoelectrics, catalysis, etc. The recent progress in intercalation effects on crystal structure and structural phase transitions, including the emergence of quantum phases are also reviewed.

2D materials↗
DOE OSTI2021

Anomalously strong near-neighbor attraction in doped 1D cuprate chains

In the cuprates, one-dimensional (1D) chain compounds provide a distinctive opportunity to understand the microscopic physics, owing to the availability of reliable theories. However, progress has been limited by the challenge of controllably doping these materials. We report the synthesis and spectroscopic analysis of the 1D cuprate Ba 2-x Sr x CuO 3+δ over a wide range of hole doping. Our angle-resolved photoemission experiments reveal the doping evolution of the holon and spinon branches. We identify a prominent folding branch whose intensity fails to match predictions of the simple Hubbard model. An additional strong near-neighbor attraction, which may arise from coupling to phonons, quantitatively explains experiments for all accessible doping levels. Furthermore, considering structural and quantum chemistry similarities among cuprates, this attraction may play a similarly important role in high-temperature cuprate superconductors.

1D Chain↗
DOE OSTI2024

Materials Science of the Interstitial Doping Process

Particle accelerators are an increasingly important tool for frontier science. Growing initial and operating costs are a significant barrier for upgrades and for new machines. While everything matters, the major cost contributor is the SRF cavities and their ancillary facilities (e.g., cryoplant). Accordingly, the accelerator science community devotes much R&D effort to improving their energy efficiency (increased Q o ) and gradient (E acc ). While improved gradient is at the forefront for certain machines (ILC), improved quality factor has broader impact, benefitting all SRF applications. An important opportunity for accelerator science and technology to move forward arose in the course of building the LCLS-II, the second generation Linac Coherent Light Source at SLAC. At more or less the same time, researchers at Fermilab discovered that introducing a small amount of nitrogen to the niobium surface could improve the mid-range quality factor as much as three-fold. A firm resolution of how nitrogen confers its benefit attracts much current research interest. The key elements of the “nitrogen doping” process were vacuum bake at 800 °C, brief exposure to mTorr of nitrogen at several hundred degrees followed by electropolish (EP) to remove several microns from the surface to eliminate unwanted nitrides: While the process as a whole was novel, the comprising unit operations are familiar to the accelerator community. It was judged reasonable to adopt it as a cost-reduction technology for LCLS-II. Researchers carried out a program of varying process parameters and measuring performance in single-cell cavities, leading to a consensus stable protocol for the project. The transition to vendor fabrication and multiple niobium sources has presented unforeseen challenges of performance variation evidently not connected to anything that could be incorporated in a purchase specification. Moving beyond the high temperature N-doping process above, researchers reported a simplified process consisting entirely of tens of hours anneal in a N atmosphere at low temperatures (~120°C – 160°C) after 800 °C UHV bake. These processes typically yield a few-nm doped layer while the high temperature process yields at least a few to many micron doped layer. Even more recently, oxygen has been used to dope instead of nitrogen which leaves a few-µm O-alloyed layer upon vacuum annealing for 300 °C for ~3 hours. The investigation of these materials is just beginning, but the process simplification they may offer is surely attractive. The very low quantity of material that appears to be significant in the “infusion” process indicates the need for very careful control of gas species available for diffusion into the surface during low temperature treatment, both for process control and research to characterize the underlying dynamics. Oxygen alloying offers the further opportunity to utilize the decomposition of the surface native oxide as the dopant source. It is necessary to understand and (thus) manage this process. We have been supported by the Department of Energy Offices of High Energy Physics and Nuclear Physics to pursue this goal.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Implications of doping on microstructure, processing, and thermoelectric performance: The case of PbSe

Abstract In this work, we highlight the often-overlooked effects of doping on the microstructure and performance of bulk thermoelectric materials to offer a broader perspective on how dopants interact with their parent material. Using PbSe doped with Na, Ag, and K as a model material system, we combine original computational, experimental, and microscopy data with established trends in material behavior, to provide an in-depth discussion of the relationship between dopants, processing, and microstructure, and their effects on thermoelectric efficiency and thermal stability. Notable observations include differences in the microstructure and mass loss of thermally treated samples of Na- and Ag-doped PbSe, as well as findings that Na and K cations exist predominantly as substitutional point defects while Ag also occupies interstitial sites and exhibits lower solubility. We discuss how these differences in point defect populations are known to affect a dopants’ ability to alter carrier concentration and how they may affect the mechanical properties of PbSe during processing. Graphic Abstract

Grovogui, Jann A. (ORCID:0000000200481049)↗
NASA NTRS1991

Effect of microstructure and composition on the improvement of n-type SiGe/GaP material

Experimental and theoretical work has been conducted at the Jet Propulsion Laboratory to improve the thermoelectric properties of n-type SiGe materials. Particular emphasis has been placed upon the understanding of the differences in dopant solid solubilities when multidoping with both Ga and P instead of P alone, as in standard SiGe alloys. A set of various experimental techniques for obtaining heavily doped hot-pressed samples coupled with thermodynamic theoretical considerations was used to relate microstructure and composition to electrical and thermal transport properties. Application of these results to high-temperature heat treatments of several SiGe/GaP samples achieved substantial improvements of the thermoelectric figure of merit Z, with average values close to 1 x 10-3K-1 over the 600-1000 C temperature range. A set of systematic anneals on heavily doped SiGe/GaP materials is reported in an attempt to consistently reproduce the optimized thermoelectric properties.

Fleurial, Jean-Pierre↗
DOE OSTI2021

Final Report: Preparation and Evaluation of N-Type CdSeTe and CdTe as an Absorber in Thin Film PV

The primary objective of this project was to demonstrate n-type CdTe and CdSeTe films prepared by in-situ doping methods using pre-doped source material. Our goal was to achieve electron density (>10 17 cm -3 ) and lifetime (>10 ns) in n-type CdTe and CdSeTe films. The focus was on indium as the dopant, as it is suitable for incorporation during melt growth of CdTe. It was thought that indium doped bulk crystals might exhibit self compensation and high resistivity, so post-growth annealing studies were planned to manipulate crystal stoichiometry, defects and electrical activity. Single crystals of CdTe:In and CdSe 0.4 Te 0.6 :In, with target In concentration 10 19 cm -3 , were grown by the vertical Bridgman crystal growth method at Washington State University (WSU). Incorporation of the intended In into the crystals was ~25%-30%, (2.5-3) ×10 18 cm -3 , according to glow discharge mass spectrometry (GDMS). Carrier concentration in CdTe:In crystals were very low until after a Cd anneal, at which point the concentration reached 8 ×10 17 cm -3 (~27% activation) according to Hall effect and time resolved photoluminescence (TRPL). CdSeTe:In, on the other hand, had ~100% carrier activation with no post-growth treatments, resulting in ~3×10 18 cm -3 carriers with a lifetime of 1.5 ns, near the radiative limit for this material.

14 SOLAR ENERGY↗
DOE OSTI2020

Tunable magnetic order in low-symmetry SeO 3 ligand linked TM 3 (SeO 3 ) 3 H 2 O ( TM =Mn , Co, and Ni) compounds

The ability to design crystal lattices with specific sublattice geometries has long been sought after especially in the context of harnessing magnetic frustration to elicit emergent physics. One approach which has seen some success recently is to design magnetic sublattices chemically through the use of nonmagnetic linker ligands as scaffolding for the magnetic ions. In this work we report the magnetic properties of one such family of materials, the transition metal (TM) selenite hydrates with chemical formula TM 3 (SeO 3 ) 3 H 2 O. These materials link highly distorted TMO 6 octahedra via nonmagnetic [SeO 3 ] 2+ linkers. Studying members with TM = Mn, Co, and Ni we use magnetic susceptibility and neutron powder diffraction to identify antiferromagnetic order in all three compounds with moderate frustration indexes. A comparison of the magnetic structures suggests that while the overall structure of the SeO 3 scaffolding remains unchanged the TM effects changes in the magnetic properties through tuning the internal bonding parameters and the single-ion physics. Changing from Mn to Co is found to be particularly consequential manifesting changes in both the ordered-moment direction and in the direction of the ordering vector. Field-dependent measurements of the susceptibility and heat capacity reveal metamagnetic transitions in both Mn 3 (SeO 3 ) 3 H 2 O and Co 3 (SeO 3 ) 3 H 2 O indicating nearby magnetic ground states accessible under relatively small applied fields. Density functional theory calculations broadly confirm these results, showing both a sensitivity of the magnetic structure to the TM and its local environment. Although no spin liquid behavior is achieved, these results suggest the fruitfulness of such synthesis philosophies and encourage future work to engender higher frustration in these materials via doping, field, pressure, or larger linker ligands.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Selectively patterned Mg-doped GaN by SiN x -driven hydrogen injection

In this work, we demonstrate a method to achieve selectively patterned Mg-doped GaN layers using hydrogen drive-in through plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN x ) films. Activated Mg-doped GaN layers were selectively deactivated by patterned PECVD SiN x films with low-temperature annealing and showed high-resistive behavior. Spatially resolved photoluminescence measurements were used to optically verify the deactivation of Mg acceptors and showed distinct features corresponding to activated and deactivated Mg in GaN. The method suggested here provides a simple and effective method to achieve patterned Mg-doped GaN regions without thermal and plasma damage, which could cause degradation of device performance. The proposed method could provide a way to achieve future high-performance GaN lateral and vertical devices that rely on laterally patterned doping.

42 ENGINEERING↗
DOE OSTI2022

Evolution of the cyclotron mass with doping in La 2–x Sr x CuO 4

The recent observation of cyclotron resonance in optimally doped La 2–x Sr x CuO 4 using time-domain THz spectroscopy in high magnetic field has given new possibilities for the study of cuprate superconductors. One can measure the cyclotron mass in the more disordered cuprates possessing short scattering times, therefore expanding the study to materials and dopings in which quantum oscillations have not been observed. In this paper we present the measurement of the carrier mass of the hole-doped cuprate La 2–x Sr x CuO 4 across a range of dopings spanning from the slightly underdoped (p=0.13) to highly overdoped (p=0.26), near the termination of the superconducting dome. These results reveal a systematic increase of m c with doping, up to values greater than 13 times the bare electron mass. This is in contrast with the masses extracted from the heat capacity, which show a peak near the pseudogap critical point p* and/or Lifshitz transition. The cyclotron frequency is linear in field up to 31 T for all dopings, giving no evidence for field-induced Fermi surface reconstructions. The cyclotron mass is found to be positive for all dopings, but with a magnitude systematically below the heat-capacity mass for under and optimally doped samples, while exceeding it for overdoped samples. Among other aspects, these results are surprising as photoemission reveals a Lifshitz transition in the middle of our doping range and the sign of the cyclotron mass determined from a finite-frequency resonance is, in conventional theories, a topological quantity only sensitive to whether or not the Fermi surface is closed around holes or electrons. We see no sign of a divergence of the mass near p* nor near the Lifshitz transition, showing that any singularity, if it exists, is not strong enough to affect the cyclotron mass.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Ab initio quantum many-body description of superconducting trends in the cuprates

Using a systematic ab initio quantum many-body approach that goes beyond low-energy models, we directly compute the superconducting pairing order and estimate the pairing gap of several doped cuprate materials and structures within a purely electronic picture. We find that we can correctly capture two well-known trends: the pressure effect, where the pairing order and gap increase with intra-layer pressure, and the layer effect, where the pairing order and gap vary with the number of copper-oxygen layers. From these calculations, we observe that the strength of superexchange and the covalency at optimal doping are the best descriptors for these trends. Our microscopic analysis further identifies that strong short-range spin fluctuations and multi-orbital charge fluctuations drive the development of the pairing order. Our work illustrates the possibility of a material-specific ab initio understanding of unconventional high-temperature superconducting materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗