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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Pb-Apatite Framework as a Generator of Novel Flat-Band CuO-Based Physics

Based upon density functional theory (DFT) calculations, we present the basic electronic structure of CuPb 9 (PO 4 ) 6 O (Cu-doped lead apatite, aka LK-99), in two scenarios: (1) where the structure is constrained to the P3 symmetry and (2) where no symmetry is imposed. At the DFT level, the former is predicted to be metallic while the latter is found to be a charge-transfer insulator. In both cases the filling of these states is nominally d 9 , consistent with the standard Cu 2+ valence state, and Cu with a local magnetic moment of order 0.7 μ B . In the metallic case we find these states to be unusually flat (∼0.2 eV dispersion), giving a very high density of electronic states (DOS) at the Fermi level that we argue can be a host for novel electronic physics. The flatness of the bands is the likely origin of symmetry-lowering gapping possibilities that would remove the spectral weight from E F . Motivated by some initial experimental observations of metallic or semiconducting behavior, we propose that disorder (likely structural) is responsible for closing the gap. Here, we consider a variety of possibilities that could possibly close the charge-transfer gap but limit consideration to kinds of disorder that preserve electron count. Of the possible kinds we considered (spin disorder, O populating vacancy sites, and Cu on less energetically favorable Pb sites), the local Cu moment, and consequently the charge-transfer gap, remains robust. We conclude that disorder responsible for metallic behavior entails some kind of doping where the electron count changes. Further, we claim that the emergence of the flat bands should be due to weak wave function overlap between the orbitals on Cu and O sites, owing to the directional character of the constituent orbitals. Therefore, finding an appropriate host structure for minimizing hybridization between Cu and O while allowing them to still weakly interact should be a promising route for generating flat bands at E F which can lead to interesting electronic phenomena, regardless of whether LK-99 is a superconductor.

36 MATERIALS SCIENCE↗
NASA NTRS1988

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Valco, George J.↗
DOE OSTI2022

Selenium-doped copper oxide nanoarrays: Robust electrocatalyst for the oxygen evolution reaction with ultralow overpotential

The oxygen evolution reaction (OER) is the key anodic reaction in electrochemical water splitting. OER is a four-electron process with sluggish reaction kinetics. RuO 2 and IrO 2 are the benchmark catalysts for OER. Thus, finding a low-cost, earth-abundant, and stable electrocatalyst for OER is a big challenge. Here in this work, we report OER over Se-CuO/CF nanoarrays with an ultralow overpotential of 440 mV (at 50 mA/cm 2 current density). Se-CuO/CF nanoarray has a TOF of 0.05 s -1 at 300 mV. The catalyst showed consistent OER performance upto1000 cycles run over a period of 10 h. The OER performance of Se-CuO/CF nanoarrays was compared with RuO 2 /CF catalyst and the overpotential for RuO 2 /CF nanoarray was only 10 mV lower than Se-CuO/CF 50 mA/cm 2 current density. Se-CuO/CF nanoarray showed 50 mV lower overpotential than the state of the art RuO 2 /CF catalyst at a current density of 100 mA/cm 2 . The Tafel slope of Se-CuO/CF is 21 mV/decade lower compared to RuO 2 /CF suggesting faster reaction kinetics of Se-CuO/CF. The electrochemical surface area and the conductivity were increased upon doping Se into CuO/CF nanoarrays which can be attributed to enhanced OER performance of the Se-CuO/CF nanoarrays.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Lanthanum induced lattice strain improves hydrogen sulfide capacities of copper oxide adsorbents

This work probes the effects of La on reactions involving CuO sorbents and H 2 S in gaseous streams. La-CuO sorbents with nominal La/Cu atomic ratios of 1:2 achieved higher capacities (27 and 36 g H 2 S per 100 g sorbent) compared to CuO sorbents (25 g H 2 S per 100 g sorbent). Here, comparison of the La-CuO sorbents using energy dispersive x-ray spectroscopy and La L 3 -edge XAS suggested that increased capacity resulted from more uniform dispersion of La within the CuO phase (3.3 wt.% vs. 1.0 wt.% La). X-Ray absorption near edge structure analysis suggested more electron-rich Cu species in La-CuO samples, while extended X-ray absorption fine structure modeling showed an increase in single-scattering path lengths for neighboring and near-neighbor atoms. These changes suggest that La induces strain in the Cu-O lattice, thereby increasing H 2 S capacity by reducing energy barriers associated with surface reactions between oxygen atoms and adsorbed H 2 S molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Insights into palladium poisoning of Cu/SSZ-13 selective catalytic reduction catalysts

Here, the impacts of Pd poisoning to the activity, selectivity, and hydrothermal stability of Cu/SSZ-13 selective catalytic reduction (SCR) catalysts are reported. Pd lowers DeNOx efficiency of Cu/SSZ-13 via two mechanisms: (1) displacing SCR active sites in the form of isolated Pd-ions, and (2) catalyzing non-selective NH 3 oxidation in the form of PdO. The first mechanism works by the diffusion of isolated Pd-ions into chabazite cages to displace ZCu II OH SCR active species, and it occurs on Cu/SSZ-13 catalysts with and without external surface CuO clusters in similar fashion. In contrast, the second mechanism works differently with and without external surface CuO clusters. For Cu/SSZ-13 catalyst without external CuO clusters (i.e., primarily isolated Cu-ions), PdO leads to significant decrease of DeNOx efficiency at reaction temperatures above ~400°C due to its non-selective NH 3 oxidation activity at high temperatures. However, this poisoning effect becomes much less impactful on Cu/SSZ-13 catalyst containing CuO clusters. This is due to the formation of CuO-PdO solid solution via interactions between CuO and PdO, which reduces non-selective NH 3 oxidation potential. Furthermore, this solid solution formation even mitigates adverse effects caused by hydrothermal aging. Hence, the poisoning effects of Pd are closely related to Cu speciation and spatial distribution of a Cu/SSZ-13 catalyst. Finally, this study suggests a strategy in eliminating Pd poisoning, that is, the introduction of an oxide phase that effectively traps PdO but does not adversely influence SCR.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Stabilization and manipulation of highly concentrated copper single atoms by high entropy oxides

Facile and controllable methodologies capable of providing single atom catalysts (SACs) with high-density active metal sites and sintering-resistance under harsh conditions are highly desired and grand challenges in heterogeneous catalysis. Herein, the entropy effect was leveraged to stabilize and manipulate the electronic properties of copper SACs. The as-developed ultrasonication-driven approach could integrate highly concentrated Cu SAs within the lattice of fluorite-structured high entropy oxide (HEFO) under ambient conditions (CuO-HEFO). The dual benefits from the high entropy effect of the support and the in-situ lattice engineering led to the generation of abundant Cu 1+ species and oxygen defects, together with ultra-high stability and sintering-resistance under extremely harsh conditions. This was confirmed by deploying non-high entropy support (CuO-CeO 2 ) or Cu sites located on the surface of HEFO (CuO@HEFO). In conclusion, the catalytic activity of CuO-HEFO surpassed that of CuO-CeO 2 and CuO@HEFO in CO oxidation together with well-maintained long-term stability and resistance to gas impurities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗