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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Dynamic tooth loads and stressing for high contact ratio spur gears

An analysis and computer program were developed for calculating the dynamic gear tooth loading and root stressing for high contact ratio gearing (HCRG) as well as LCRG. The analysis includes the effects of the variable tooth stiffness during the mesh, tooth profile modification, and gear errors. The calculation of the tooth root stressing caused by the dynamic gear tooth loads is based on a modified Heywood gear tooth stress analysis, which appears more universally applicable to both LCRG and HCRG. The computer program is presently being expanded to calculate the tooth contact stressing and PV values. Sample application of the gear program to equivalent LCRG (1.566 contact ratio) and HCRG (2.40 contact ratio) revealed the following: (1) the operating conditions and dynamic characteristics of the gear system an affect the gear tooth loading and root stressing, and therefore, life significantly; (2) the length of the profile modification affect the tooth loading and root stressing significantly, the amount depending on the applied load, speed, and contact ratio; and (3) the effect of variable tooth stiffness is small, shifting and increasing the response peaks slightly from those for constant tooth stiffness.

Cornell, R. W.↗
NASA NTRS1985

Measuring The Contact Resistances Of Photovoltaic Cells

Simple method devised to measure contact resistances of photovoltaic solar cells. Method uses readily available equipment and applicable at any time during life of cell. Enables evaluation of cell contact resistance, contact-end resistance, contact resistivity, sheet resistivity, and sheet resistivity under contact.

Burger, D. R.↗
NASA NTRS1982

Solar cell contacts

Two experimental contact systems were examined and compared to a baseline contact system consisting of evaporated layers of titanium, palladium, and silver and an electroplated layer of copper. The first experimental contact system consisted of evaporated layers of titanium, nickel, and copper and an electroplated layer of copper. This system performed as well as the baseline system in all respects, including its response to temperature stress tests, to a humidity test, and to an accelerated aging test. In addition, the cost of this system is estimated to be only 43 percent of the cost of the baseline system at a production level of 25 MW/year. The second experimental contact system consisted of evaporated layers of nickel and copper and an electroplated layer of copper. Cells with this system show serious degradation in a temperature stress test at 350 C for 30 minutes. Auger electron spectroscopy was used to show that the evaporated nickel layer is not an adequate barrier to copper diffusion even at temperatures as low as 250 C. This fact brings into question the long-term reliability of this contact system.

Meier, D. L.↗
NASA NTRS1985

Generation of spiral bevel gears with zero kinematical errors and computer aided simulation of their meshing and contact

There is proposed a method for generation of Gleason's spiral bevel gears which provides the following properties of meshing and contact: (1) the contact normal keeps its original direction within the neighborhood of the main contact point; (2) the contact ellipse moves along the gear tooth surface; and (3) the kinematical errors caused by Gleason's method of cutting are almost zero. Computer programs for the simulation of meshing and bearing contact are developed.

Litvin, F. L.↗
NASA NTRS1988

Rugged low-resistance contacts to YBa2Cu3O(x)

Rugged low-resistance contacts to a high-T(c) superconductor YBa2Cu3O(x) were made by melting gold onto the sample surface, where it diffused into the sample pores making a strong mechanical contact in the form of a bead. Contact resistances lower than 50 microohm were obtained, allowing passage, without heating, of a direct current of about 5 A while the sample remained in the superconducting state at 20 K. Results of SEM and of contact-resistance, critical-current, and shear-strength measurements on these contacts are included.

Caton, R.↗
NASA NTRS1989

Chain Of Test Contacts For Integrated Circuits

Test structure forms chain of "cross" contacts fabricated together with large-scale integrated circuits. If necessary, number of such chains incorporated at suitable locations in integrated-circuit wafer for determination of fabrication yield of contacts. In new structure, resistances of individual contacts determined: In addition to making it possible to identify local defects, enables generation of statistical distributions of contact resistances for prediction of "parametric" contact yield of fabrication process.

Lieneweg, Udo↗
NASA NTRS1989

Mixed formulation for frictionless contact problems

Simple mixed finite element models and a computational precedure are presented for the solution of frictionless contact problems. The analytical formulation is based on a form of Reissner's large rotation theory of the structure with the effects of transverse shear deformation included. The contact conditions are incorporated into the formulation by using a perturbed Lagrangian approach with the fundamental unknowns consisting of the internal forces (stress resultants), the generalized displacements, and the Lagrange multipliers associated with the contact conditions. The element characteristic array are obtained by using a modified form of the two-field Hellinger-Reissner mixed variational principle. The internal forces and the Lagrange multipliers are allowed to be discontinuous at interelement boundaries. The Newton-Raphson iterative scheme is used for the solution of the nonlinear algebraic equations, and the determination of the contact area and the contact pressures.

Noor, Ahmed K.↗
NASA NTRS1989

Observations of a shock and a recombination layer at the contact surface of Comet Halley

Results are presented on observations in the vicinity of the contact surface of the Comet Halley, obtained by the Giotto ion mass spectrometer, with emphasis placed on two specific events observed in this region on the inbound pass. One was a burst of energized ions (about 20 eV) of 2-sec duration observed two seconds before the contact surface was encountered, which coincided with a pulse in magnetic field strength interpreted by Neubauer (1988) as a fast-mode shock traveling away from the contact surface. The second was a sharp spike in ion densities observed at the contact surface by the mass analyzer, centered approximately at the inner edge of the contact surface. This ion-density spike is interpreted as a boundary layer into which the radial ionospheric flow enters and piles up; the density increase is limited by recombination.

Goldstein, B. E.↗
NASA NTRS1989

Contact conductance evaluation for a full scale space erectable radiator pressurized interface

The baseline thermal control configuration for the Space Station Freedom includes a contact heat exchanger to provide efficient heat transfer between the two-phase thermal bus heat collection/delivery system and the radiator panel heat rejection system. The contact heat exchanger provides a dry interface for a modular radiator system with easy on-orbit panel replacement. July 1988 testing of the Space Erectable Radiator System (SERS) at NASA-JSC provided thermal/vacuum data for three full-scale prototype units of a pressurized dry contact heat exchanger design. Derived contact conductance values agreed with predictions and previous element tests and demonstrated high conductance for relatively low pressure levels. A limited amount of data was also obtained below the operating pressure, resulting in contact conductance trends with respect to interface pressure.

Duschatko, R. John↗
NASA NTRS1991

The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au-contacted III-V semiconductors

The effect of introducing a very small amount of Ga into Au-contacted InP on the behavior of that contact system was investigated. It was found that Ga affected both the metallurgical and the electrical behavior of the system. It is shown that Ga atoms in the interstices of the Au lattice prevent the solid-state reactions that normally take place between Au and InP during contact sintering and cause an order of magnitude reduction in the specific contact resistivity. It is also shown that the presence of Ga affects the reactions of GaP and GaAs with Au contacts.

Weizer, Victor G.↗
NASA NTRS1991

A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3, which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

Weizer, Victor G.↗
NASA NTRS1992

Sinterless contacts to shallow junction InP solar cells

In the past, the achievement of good electrical contact to InP has inevitably been accompanied by mechanical degradation of the InP itself. Most contact systems require heat treatment after metal deposition that results in the dissolution of substantial amounts of InP into the metallization. Devices such as the solar cell, where shallow junctions are the rule, can be severely degraded if the damage to the semiconductor substrate is not precisely controlled. Two contact systems are described that provide low contact resistance to InP solar cells that do not require subjecting the current carrying metallization to a post deposition sintering process. It is shown that these two systems, one nickel based and the other silver based, provide contact resistivity values in the low 10(exp -6) ohm sq cm range, as fabricated, without the need for sintering.

Weizer, V. G.↗
NASA NTRS1991

Low resistivity contacts to YBa2Cu3O(7-x) superconductors

Silver, gold, platinum, and palladium metals were investigated as electroding materials for the YBa2Cu3O(7-x) superconductors. Painting, embedding, and melting techniques were used to apply the electrodes. Contact resistivities were determined by: (1) type of electrode; (2) firing conditions; and (3) application method. Electrodes fired for long times exhibited lower contact resistivities than those fired for short times. Low-resistivity contacts were found for silver and gold electrodes. Silver, which made good ohmic contact to the YBa2Cu3O(7-x) superconductor with low contact resistivities was found to be the best electroding material among the materials evaluated in this investigation.

Hsi, Chi-Shiung↗
NASA NTRS1991

A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3 which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

Weizer, Victor G.↗
NASA NTRS1993

The structural and electrical properties of low-resistance Ni contacts to InP

We have investigated the electrical and metallurgical behavior of the Ni-InP contact system. Specific contact resistivity (Rc) values in the low 10 exp -7 Omega-sq cm range are achieved with Ni-only contacts on n-InP by sintering at 400 C for several minutes. The postsinter contact metallization consists of three layers, arranged in the sequence: InP/Ni3P/Ni2P/In. Extended sintering (40 min) at 400 C brings about a rise in Rc to the 10 exp -4 Omega-sq cm range. After extended sintering, the contact metallization is found to consist of only two layers, arranged in the sequence: InP/Ni2P/In. Based on the correlation between low Rc and the presence of Ni3P at the metal-InP interface, it is suggested that the presence of Ni3P is the cause of the low Rc values. We show that the sintering schedule used to achieve low values of Rc is accompanied by substantial metal-InP interdiffusion that results in severe device degradation.

Fatemi, Navid S.↗
NASA NTRS1993

Contact-impact analysis of deployable space systems

This paper presents simulation results of a flexible, deployable space system with multiple contact-impact events, using three different modeling approaches. In the first two approaches, the equations of motion of the system are written in terms of generalized coordinates of each component, with modal coordinates used to account for flexibility in the components. Two different methods are used to model contact-impact events in the systems. In the momentum balance method, as contact-impact occurs, momentum equations of the systems are solved for the jump discontinuity in velocity of generalized coordinates. Integration of the system is restarted with the new initial conditions from solutions of momentum equations. In the logical function method, a virtual spring connecting the two contact points is assumed. The virtual spring is active only when impact occurs. No special treatment is needed in the integration algorithm using this method. In the third approach, instead of using modal coordinates, a finite element based formulation for the transient dynamics of mechanical system is used to model flexibility of the components. The logical function method is used to model contact-impact in the third approach.

Wu, Shih-Chin↗
NASA NTRS1993

Contact sensing from force measurements

This article addresses contact sensing (i.e., the problem of resolving the location of a contact, the force at the interface, and the moment about the contact normals). Called 'intrinsic' contact sensing for the use of internal force and torque measurements, this method allows for practical devices that provide simple, relevant contact information in practical robotic applications. Such sensors have been used in conjunction with robot hands to identify objects, determine surface friction, detect slip, augment grasp stability, measure object mass, probe surfaces, and control collision and for a variety of other useful tasks. This article describes the theoretical basis for their operation and provides a framework for future device design.

Bicchi, Antonio↗
NASA NTRS1993

Simple, extremely low resistance contact system to n-InP that does not exhibit metal-semiconductor intermixing during sintering

Contact formation to InP is plagued by the violent metal-semiconductor intermixing that takes place during the contact sintering process. We have discovered a truly unique contact system, involving Au and Ge, which is easily fabricated, which exhibits extremely low values of contact resistivity, and in which there is virtually no metal-semiconductor interdiffusion, even after extended sintering. We present a description of this contact system and suggest possible mechanisms to explain the observed behavior.

Weizer, Victor G.↗