SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
This manual describes the installation and use of the Xyce TM XDM Net list Translator. XDM simplifies the translation of netlists generated by commercial circuit simulator tools into Xyce-compatible netlists. XDM currently supports translation from PSpice and HSPICE netlists into Xyce TM netlists.
This manual describes the installation and use of the Xyce™ XDM Netlist Translator. XDM simplifies the translation of netlists generated by commercial circuit simulator tools into Xyce-compatible netlists. XDM currently supports translation from PSpice and HSPICE netlists into Xyce™ netlists.
This manual describes the installation and use of the Xyce™ XDM Netlist Translator. XDM simplifies the translation of netlists generated by commercial circuit simulator tools into Xyce-compatible netlists. XDM currently supports translation from PSpice, HSPICE, and Spectre netlists into Xyce™ netlists.
This manual describes the installation and use of the Xyce™ XDM Netlist Translator. XDM simplifies the translation of netlists generated by commercial circuit simulator tools into Xyce-compatible netlists. XDM currently supports translation from PSpice, HSPICE, and Spectre netlists into Xyce™ netlists.
It is very difficult to measure the voltage of the load on the Saturn accelerator. Time-resolved measurements such as vacuum voltmeters and V-dot monitors are impractical at best and completely change the pulsed power behavior at the load at worst. We would like to know the load voltage of the machine so that we could correctly model the radiation transport and tune our x-ray unfold methodology and circuit simulations of the accelerator. Step wedges have been used for decades as a tool to measure the end - point energies of high energy particle beams. Typically, the technique is used for multi-megavolt accelerators, but we have adapted it to Saturn's modest <2 MV end-point energy and modified the standard bremsstrahlung x-ray source to extract the electron beam without changing the physics of the load region. We found clear evidence of high energy electrons >2 MV. We also attempted to unfold an electron energy spectrum using a machine learning algorithm and while these results come with large uncertainties, they qualitatively agree with PIC simulation results.
This manual describes the installation and use of the Xyce™ XDM Netlist Translator. XDM simplifies the translation of netlists generated by commercial circuit simulator tools into Xyce-compatible netlists. XDM currently supports translation from PSpice, HSPICE, and Spectre netlists into Xyce™ netlists.
This manual describes the installation and use of the Xyce™ XDM Netlist Translator. XDM simplifies the translation of netlists generated by commercial circuit simulator tools into Xyce-compatible netlists. XDM currently supports translation from PSpice, HSPICE, and Spectre netlists into Xyce™ netlists.
The ability to simulate a fermionic system on a quantum computer is expected to revolutionize chemical engineering, materials design, nuclear physics, to name a few. Thus, optimizing the simulation circuits is of significance in harnessing the power of quantum computers. Here, we address this problem in two aspects. In the fault-tolerant regime, we optimize the R z and T gate counts along with the ancilla qubit counts required, assuming the use of a product-formula algorithm for implementation. We obtain a savings ratio of two in the gate counts and a savings ratio of eleven in the number of ancilla qubits required over the state of the art. In the pre-fault tolerant regime, we optimize the two-qubit gate counts, assuming the use of the variational quantum eigensolver (VQE) approach. Specific to the latter, we present a framework that enables bootstrapping the VQE progression towards the convergence of the ground-state energy of the fermionic system. This framework, based on perturbation theory, is capable of improving the energy estimate at each cycle of the VQE progression, by about a factor of three closer to the known ground-state energy compared to the standard VQE approach in the test-bed, classically-accessible system of the water molecule. The improved energy estimate in turn results in a commensurate level of savings of quantum resources, such as the number of qubits and quantum gates, required to be within a pre-specified tolerance from the known ground-state energy. We also explore a suite of generalized transformations of fermion to qubit operators and show that resource-requirement savings of up to more than 20 % , in small instances, is possible.
Recently, there has been considerable research interest in the potential for DC distribution systems in buildings instead of the traditional AC distribution systems. Due to the need for performing power conversions between DC and AC electricity, DC distribution may provide electrical efficiency advantages in some systems. To support comparative evaluations of AC-only, DC-only, and hybrid AC/DC distribution systems in buildings, a new modeling toolkit called the Building Electrical Efficiency Analysis Model (BEEAM) was developed and is described in this paper. To account for harmonics in currents or voltages arising from nonlinear devices, the toolkit implements harmonic power flow, along with nonlinear device behavioral descriptions derived from empirical measurements. This paper describes the framework, network equations, device representations, and an implementation of the toolkit in an open source software package, including a component library and graphical interface for creating circuits. Simulations of electrical behavior and device and system efficiencies using the toolkit are compared with experimental measurements of a small office environment in a variety of operating and load configurations. A detailed analysis of uncertainty estimation is also provided. Key findings were that a comparison of predicted versus measured efficiencies and power losses in the validation testbed using the initial toolkit implementation predicted device- and system-level efficiencies with reasonably good accuracy under both balanced and unbalanced AC scenarios. An uncertainty analysis also revealed that the maximum estimated error for system efficiency across all scenarios was 3%, and measured and modeled system efficiency agreed within the experimental uncertainty in approximately half of the scenarios. Based on the correspondence between simulation and measurement, the toolkit is proposed by the authors as a potentially useful tool for comparing efficiency in AC, DC, and hybrid AC/DC distribution systems in buildings.
This dataset contains the complete outdoor measurement and analysis data for a mechanically stacked, four-terminal (4T) gallium arsenide (GaAs)//silicon (Si) tandem solar mini-module deployed from October 2019 to January 2021 at the Solar Radiation Research Laboratory (SRRL) in Golden, Colorado, USA. The data support a performance modeling and degradation analysis framework for tandem photovoltaic devices, as described in the accompanying publication. The dataset includes: (1) current–voltage (J–V) characteristics of each sub-cell measured approximately every five minutes, with extracted performance parameters; (2) spectral irradiance from an EKO MS-710 WISER spectroradiometer, along with derived spectral mismatch ratios (SMR) and average photon energy (APE); (3) one-minute resolution meteorological data from the co-located SRRL weather station and GPS-derived precipitable water vapor (PWV); (4) pre-deployment laboratory characterization (external quantum efficiency, J–V curves, standard test conditions parameters); (5) outdoor-extracted temperature and PWV correction coefficients; and (6) PVcircuit equivalent-circuit simulation outputs used for model validation. Degradation rates of −4.1 ± 0.2 %/year (GaAs) and −2.5 ± 0.9 %/year (Si) were determined using a filtering and normalization methodology adapted for fixed-tilt tandem modules. All data are provided in open, portable formats (Apache Parquet, CSV, JSON) to enable full reproducibility of the published analysis.
Analog circuit simulating quantization for analog simulation of hybrid control system, showing quantized output and error signal for wave forcing function
Radiation effects in MOS devices and circuits are considered along with radiation effects in materials, space radiation effects and spacecraft charging, SGEMP, IEMP, EMP, fabrication of radiation-hardened devices, radiation effects in bipolar devices and circuits, simulation, energy deposition, and dosimetry. Attention is given to the rapid anneal of radiation-induced silicon-sapphire interface charge trapping, cosmic ray induced errors in MOS memory cells, a simple model for predicting radiation effects in MOS devices, the response of MNOS capacitors to ionizing radiation at 80 K, trapping effects in irradiated and avalanche-injected MOS capacitors, inelastic interactions of electrons with polystyrene, the photoelectron spectral yields generated by monochromatic soft X radiation, and electron transport in reactor materials.
Applications suited for the CYBER 200 digital computer are discussed. Various areas of application including meteorology, algorithms, fluid dynamics, monte carlo methods, petroleum, electronic circuit simulation, biochemistry, lattice gauge theory, economics and ray tracing are discussed.
Single-Event Upset (SEU) in bipolar integrated circuits (ICs) is caused by charge collection from ion tracks in various regions of a bipolar transistor. This paper presents experimental data which have been obtained wherein the range-energy characteristics of heavy ions (Br) have been utilized to determine the cross section for soft-error generation as a function of charge collected from single-particle tracks which penetrate a bipolar static RAM. The results of this work provide a basis for the experimental verification of circuit-simulation SEU modeling in bipolar ICs.
Modeling of SEU has been done in a CMOS static RAM containing 1-micron-channel-length transistors fabricated from a p-well epilayer process using both circuit-simulation and numerical-simulation techniques. The modeling results have been experimentally verified with the aid of heavy-ion beams obtained from a three-stage tandem van de Graaff accelerator. Experimental evidence for a novel SEU mode in an ON n-channel device is presented.
This paper demonstrates the use of resonant-tunneling diodes as varistors for harmonic multiplication. It is shown that efficient odd-harmonic conversion is possible and that even harmonics do not appear because of the antisymmetry of the current-voltage (I-V) curve. It is also shown that, with the proper choice of resonant-tunneling structure and pump amplitude, most of the harmonic output power can be confined to a single odd-harmonic frequency. Fifth-harmonic multiplication was demonstrated with an output at 21.75 GHz and a power conversion efficiency of 0.5 percent, and a fifth-harmonic efficiency of 2.7 percent was achieved in a circuit simulation using an improved I-V curve.
A bench-level test is being developed to evaluate memory-cell upsets in a test SRAM designed with a cell offset voltage. This offset voltage controls the critical charge needed to upset the cell. The effect is demonstrated using a specially designed 2-micron n-well CMOS 4-kb test SRAM and a Po-208 5.1-MeV 0.61-LET alpha-particle source. This test SRAM has been made sensitive to alpha particles through the use of a cell offset voltage, and this has allowed a bench-level characterization in a laboratory setting. The experimental data are linked to a alpha-particle interaction physics and to SPICE circuit simulations through the alpha-particle collection depth. The collection depth is determined by two methods and found to be about 7 micron. In addition, alpha particles that struck outside the bloated drain were able to flip the SRAM cells. This lateral charge collection was observed to be more than 6 micron.
The following text discusses results from the electronic step testing and the beginning of velocity step testing in the shock tube. It should be kept in mind that frequency response is always measured as the time from the beginning of the event to the minimum (positive inflection) of the 'bucket' that immediately follows the response. This report is not a complete account of the results from square wave testing. Some data is still in the process of being analyzed and efforts are being made to fit the data to both Freymuth's third order theory and modelled responses from SPICE circuit simulation software.