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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Method of making dielectric capacitors with increased dielectric breakdown strength

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Temperature-dependent stability of energy storage properties of Pb{sub 0.97}La{sub 0.02}(Zr{sub 0.58}Sn{sub 0.335}Ti{sub 0.085})O{sub 3} antiferroelectric ceramics for pulse power capacitors

The dielectric properties and electrical hysteresis behaviors of Pb{sub 0.97}La{sub 0.02}(Zr{sub 0.58}Sn{sub 0.335}Ti{sub 0.085})O{sub 3} antiferroelectric (AFE) ceramics were investigated in this work with an emphasis on energy storage properties. Three phase transition points can be detected as temperature increases. AFE and paraelectric phases are found to coexist from 100 °C to 170 °C. The room temperature recoverable energy density is 1.37 J/cm{sup 3} at 8.6 kV/mm. With increasing temperature (from 20 °C to 100 °C) and frequency (from 0.01 to 100 Hz) under 8.6 kV/mm, the variation of recoverable energy density was less than 15%, all higher than 1.2 J/cm{sup 3}. All the corresponding energy efficiencies were no less than 75%. The high energy density, high energy efficiency, and their weak dependence on temperature and frequency during a wide scope indicate that these antiferroelectric ceramics are quite promising to be used for pulse power capacitors applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1996

Low Temperature Characterization of Ceramic and Film Power Capacitors

Among the key requirements for advanced electronic systems is the ability to withstand harsh environments while maintaining reliable and efficient operation. Exposures to low temperature as well as high temperature constitute such stresses. Applications where low temperatures are encountered include deep space missions, medical imaging equipment, and cryogenic instrumentation. Efforts were taken to design and develop power capacitors capable of wide temperature operation. In this work, ceramic and film power capacitors were developed and characterized as a function of temperature from 20 C to -185 C in terms of their dielectric properties. These properties included capacitance stability and dielectric loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed on the capacitors. The manuscript presents the results that indicate good operational characteristic behavior and stability of the components tested at low temperatures.

Hammoud, Ahmad↗
NASA NTRS2014

Effect of Preconditioning and Soldering on Failures of Chip Tantalum Capacitors

Soldering of molded case tantalum capacitors can result in damage to Ta205 dielectric and first turn-on failures due to thermo-mechanical stresses caused by CTE mismatch between materials used in the capacitors. It is also known that presence of moisture might cause damage to plastic cases due to the pop-corning effect. However, there are only scarce literature data on the effect of moisture content on the probability of post-soldering electrical failures. In this work, that is based on a case history, different groups of similar types of CWR tantalum capacitors from two lots were prepared for soldering by bake, moisture saturation, and longterm storage at room conditions. Results of the testing showed that both factors: initial quality of the lot, and preconditioning affect the probability of failures. Baking before soldering was shown to be effective to prevent failures even in lots susceptible to pop-corning damage. Mechanism of failures is discussed and recommendations for pre-soldering bake are suggested based on analysis of moisture characteristics of materials used in the capacitors' design.

multilayer ceramic capacitor (MLCC)↗
DOE OSTI2015

PLZT Film Capacitors for Power Electronics and Energy Storage Applications

Ceramic film capacitors with high dielectric constant and high breakdown strength hold special promise for applications demanding high power density. By means of chemical solution deposition, we deposited ≈2-μm-thick films of lanthanum-doped lead zirconate titanate (PLZT) on LaNiO3-buffered Ni (LNO/Ni) foils and platinized silicon (PtSi) substrates. The dielectric properties and energy storage performance of the resulting samples were determined under a high level of applied electric field. X-ray diffraction stress analysis revealed that PLZT on LNO/Ni bears a compressive stress of ≈370 MPa while PLZT on PtSi endures a tensile stress of ≈250 MPa. Compressive stress was found to lead to heightened polarization, improved tunability, increased irreversible domain wall motion, and enhanced breakdown strength for PLZT deposited on the LNO/Ni as compared with the PtSi substrate. We observed a tunability of ≈55 and ≈40 % at room temperature under 100 kV/cm applied field, remanent polarization of ≈23.5 and ≈7.4 µC/cm^2, coercive electric field of ≈25.6 and ≈21.1 kV/cm, and dielectric breakdown strength of ≈2.6 and ≈1.5 MV/cm for PLZT deposited on LNO/Ni foils and PtSi substrates, respectively. A high recoverable energy density of ≈85 J/cm^3 and energy conversion efficiency of ≈65 % were measured on the PLZT film grown on LNO/Ni.

ceramic film capacitor↗
NASA NTRS1998

Performance of Surface-Mount Ceramic and Solid Tantalum Capacitors for Cryogenic Applications

Low temperature electronics are of great interest for space exploration programs. These include missions to the outer planets, earth-orbiting and deep-space probes, remote-sensing and communication satellites. Terrestrial applications would also benefit from the availability of low temperature electronics. Power components capable of low temperature operation would, thus, enhance the technologies needed for the development of advanced power systems suitable for use in harsh environments. In this work, ceramic and solid tantalum capacitors were evaluated in terms of their dielectric properties as a function of temperature and at various frequencies. The surface-mount devices were characterized in terms of their capacitance stability and dissipation factor in the frequency range of 50 Hz to 100 kHz at temperatures ranging from room temperature (20 deg. C) to about liquid nitrogen temperature (-190 deg. C). The results are discussed and conclusions made concerning the suitability of the capacitors investigated for low temperature applications.

Patterson, Richard L.↗
NASA NTRS2011

Failure Modes in Capacitors When Tested Under a Time-Varying Stress

Power-on failure has been the prevalent failure mechanism for solid tantalum capacitors in decoupling applications. A surge step stress test (SSST) has been previously applied to identify the critical stress level of a capacitor batch to give some predictability to the power-on failure mechanism [1]. But SSST can also be viewed as an electrically destructive test under a time-varying stress (voltage). It consists of rapidly charging the capacitor with incremental voltage increases, through a low resistance in series, until the capacitor under test is electrically shorted. When the reliability of capacitors is evaluated, a highly accelerated life test (HALT) is usually adopted since it is a time-efficient method of determining the failure mechanism; however, a destructive test under a time-varying stress such as SSST is even more time efficient. It usually takes days or weeks to complete a HALT test, but it only takes minutes for a time-varying stress test to produce failures. The advantage of incorporating a specific time-varying stress profile into a statistical model is significant in providing an alternative life test method for quickly revealing the failure mechanism in capacitors. In this paper, a time-varying stress that mimics a typical SSST has been incorporated into the Weibull model to characterize the failure mechanism in different types of capacitors. The SSST circuit and transient conditions for correctly surge testing capacitors are discussed. Finally, the SSST was applied for testing Ta capacitors, polymer aluminum capacitors (PA capacitors), and multi-layer ceramic (MLC) capacitors with both precious metal electrodes (PME) and base metal electrodes (BME). The test results are found to be directly associated with the dielectric layer breakdown in Ta and PA capacitors and are independent of the capacitor values, the way the capacitors were built, and the capacitors manufacturers. The test results also show that MLC capacitors exhibit surge breakdown voltages much higher than the rated voltage and that the breakdown field is inversely proportional to the dielectric layer thickness. The SSST data can also be used to comparatively evaluate the voltage robustness of capacitors for decoupling applications.

Liu, David (Donhang)↗
DOE OSTI2018

Determination of the Steady State Leakage Current in Structures with Ferroelectric Ceramic Films

Steady state leakage currents have been investigated in capacitor structures with ferroelectric solgel films of lead zirconate titanate (PZT) formed on silicon substrates with a lower Pt electrode. It is established that Pt/PZT/Hg structures, regardless of the PZT film thickness, are characterized by the presence of a rectifying contact similar to p–n junction. The steady state leakage current in the forward direction increases with a decrease in the film thickness and is determined by the ferroelectric bulk conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Method of manufacturing a shapeable short-resistant capacitor

A method that employs a novel combination of conventional fabrication techniques provides a ceramic short-resistant capacitor that is bendable and/or shapeable to provide a multiple layer capacitor that is extremely compact and amenable to desirable geometries. The method allows thinner and more flexible ceramic capacitors to be made. The method includes forming a first thin metal layer on a substrate; depositing a thin, ceramic dielectric layer over the metal layer; depositing a second thin metal layer over the dielectric layer to form a capacitor exhibiting a benign failure mode; and separating the capacitor from the substrate. The method may also include bending the resulting capacitor into a serpentine arrangement with gaps between the layers that allow venting of evaporated electrode material in the event of a benign failure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Fully Integrated Applications of Thin Films on Low Temperature Cofired Ceramic (LTCC)

Thin film multilayers have previously been introduced on multilayer low temperature cofired ceramic (LTCC), as well as initial thin film capacitors on LTCC. The ruggedness of a multipurpose Ti-Cu-Pt-Au stack for connectivity and RF conductivity has continued to benefit fabrication and reliability in state of-the-art modules, while the capacitors have followed the traditional Metal-Insulator-Metal (MIM) style. The full integration of thin film passives with thin film connectivity traces is presented. Certain passives, such as capacitors, require specifically tailored and separately patterned thin film (multi-)layers, including a dielectric. Different capacitance values are achieved by variation of both the insulator layer thickness and the active area of the capacitor. Other passives, such as filters, require only the conductor - a single thin film multilayer. This can be patterned from the same connectivity thin film material (Ti-Cu-Pt-Au), or a specially tailored thin film material (e.g. Ti-Cu-Au) can be deposited. Both versions are described, including process and integration details. Examples are discussed, ranging from patterning for maximum tolerances, to space and performance-optimized designs. Cross-sectional issues associated with integration are also highlighted in the discussion.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Microstructure and dielectric properties of BaTiO{sub 3} ceramic doped with yttrium, magnesium, gallium and silicon for AC capacitor application

Graphical abstract: Core–shell structure can be obtained in BaTiO{sub 3} ceramics co-doped with Y–Mg-Ga-Si. Y-Mg-Ga-Si co-dopant can obviously reduce dielectric loss, improve AC breakdown voltage and flatten temperature dependence of capacitance curve. - Highlights: • Y-Mg-Ga-Si co-doped BaTiO{sub 3} ceramics with core-shell structure were prepared. • Y{sup 3+}, Mg{sup 2+}, and Ga{sup 3+} dissolved in the lattice BaTiO{sub 3} replacing Ba{sup 2+} site or Ti{sup 4+} site. • Y{sup 3+} and Ga{sup 3+} tended to remain close to the grain boundaries as a shell maker. • Y-Mg-Ga-Si co-doped BaTiO{sub 3} ceramics show high AC breakdown voltage and low tanδ. - Abstract: The microstructures and dielectric properties of Y-Mg-Ga-Si co-doped barium titanate ceramics were investigated. Y{sup 3+} dissolved in the lattice of BaTiO{sub 3} replacing both Ba{sup 2+} site and Ti{sup 4+} site, and Mg{sup 2+} replaced Ti{sup 4+} site. The replacements of Y{sup 3+} and Mg{sup 2+} inhibit the grain growth, cause tetragonal-to-pseudocubic phase transition, reduce the dielectric loss, and flatten the temperature dependence of capacitance curve. The incorporation of Ga{sup 3+} can improve sintering and increase permittivity. Y{sup 3+} and Ga{sup 3+} tended to remain close to the grain boundaries, and play an important role as a shell maker in the formation of the core–shell structure in the co-doped BaTiO{sub 3} ceramics. Excellent dielectric properties: ϵ{sub r} = ∼2487, tanδ = ∼0.7% (at 1 kHz), ΔC/C{sub 25} < ∼6.56% (from −55 °C to 125 °C) and alternating current breakdown voltage E < ∼4.02 kV/mm can be achieved in the BaTiO{sub 3}–0.02Y{sub 2}O{sub 3}–0.03MgO–0.01Ga{sub 2}O{sub 3}–0.005SiO{sub 2} ceramics sintered at 1380 °C. This material has a potential application in alternating current multilayer ceramic capacitor.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Super miniaturization of film capacitor dielectrics

The alignment of the stable electrical characteristics of film capacitors in the physical dimensions of ceramic and tantalum capacitors are discussed. The reliability of polycarbonate and mylar capacitors are described with respect to their compatibility with military specifications. Graphic illustrations are presented which show electrical and physical comparisons of film, ceramic, and tantalum capacitors. The major focus is on volumetric efficiency, weight reduction, and electrical stability.

Lavene, B.↗