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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Thermoelectric System Economics - The Apex: New Paradigms in Manufacturing and Interface Performance Relationships Driving System Cost Optimizations

Thermoelectric energy recovery systems require cost-optimized designs with high thermal and thermoelectric (TE) performance to surmount common commercialization barriers controlling the acceptance of thermoelectric generator (TEG) systems. Recent work has addressed this requirement with new analytic tools and paradigms that allow integrated TEG cost-performance analysis and optimization. New work herein has identified the existence of optimized TE element design (i.e., TE element length) for minimizing TEG cost and provides design guidelines associated with critical thermal and electrical contact resistance effects and TE manufacturing sensitivities. Once optimum hot-side heat flux criteria are satisfied, this work highlights the tradeoffs between interface resistance effects and manufacturing cost effects in determining optimum-cost TE element lengths, and then quantifies the increase in optimum-cost TE lengths as manufacturing costs become more sensitive to TE element lengths. Optimized TE element design criteria and key non-dimensional design parameters (i.e., [𝐶′′′LTE/𝐶′′], [TE/con], [con/(TE,aveLTE)]) driving the design are presented and explained showing the interdependencies between manufacturing cost parameters and thermal and electrical interface impacts on integrated TE cost-performance analysis and design. Comprehensive TEG system cost-performance relationships clearly demonstrate the two parameters that most greatly impact the TEG system cost are heat exchanger costs ($/(W/K)) and TE hot side heat flux. Reducing heat exhanger cost from $1/(W/K) to $0.5/(W/K) can decrease TEG system cost by $2/W to $4/W depending on TE hot side heat fluxes from 4-10 W/cm2. The impact of TE hot side heat flux on TEG system cost is larger; reducing TE system cost by factors of 2-4 as TE hot side heat flux increases from 4 W/cm2 to high levels around 18 W/cm2. The levels of thermal contact resistance and electrical contact resistance required to even approach the critical TEG system cost level of $1/W are characterized by con = 1.0 x 10-10 -m2 and r = 0.1, respectively. This not only lowers TEG costs, but it also makes the TEG system costs less sensitive to TE manufacturing dependences on TE element length. New design paradigms and relationships create holistic, integrated TE performance-cost models that enhance understanding of crucial interrelationships between component costs, TE design parameters and material properties, heat exchanger design parameters, interfacial heat flux, and now thermal and electrical interface effects in minimizing TEG system costs.

Hendricks, Terry J.↗
NASA NTRS1999

Single Particle Transport Through Carbon Nanotube Wires: Effect of Defects and Polyhedral Cap

The ability to manipulate carbon nanotubes with increasing precision has enabled a large number of successful electron transport experiments. These studies have primarily focussed on characterizing transport through both metallic and semiconducting wires. Tans et al. demonstrated ballistic transport in single-wall nanotubes for the first time, although the experimental configuration incurred large contact resistance. Subsequently, methods of producing low contact resistances have been developed and two terminal conductances smaller than 50 k-ohms have been repeatably demonstrated in single-wall and multi-wall nanotubes. In multi-wall nanotubes, Frank et al. demonstrated a resistance of approximately h/2e(exp 2) in a configuration where the outermost layer made contact to a liquid metal. This was followed by the work of de Pablo et al. where a resistance of h(bar)/27e(exp 2) (approximately 478 ohms) was measured in a configuration where electrical contact was made to many layers of a multi-wall nanotube. Frank et al. and Pablo et al. note that each conducting layer contributes a conductance of only 2e(exp 2)/h, instead of the 4e(exp 2)/h that a single particle mode counting picture yields. These small resistances have been obtained in microns long nanotubes, making them the best conducting molecular wires to date. The large conductance of nanotube wires stems from the fact that the crossing bands of nanotubes are robust to defect scattering.

Anantram, M. P.↗
NASA NTRS2011

Life Testing of Yb14MnSb11 for High Performance Thermoelectric Couples

The goal of this study is to verify the long term stability of Yb14MnSb11 for high performance thermoelectric (TE) couples. Three main requirements need to be satisfied to ensure the long term stability of thermoelectric couples: 1) stable thermoelectric properties, 2) stable bonding interfaces, and 3) adequate sublimation suppression. The efficiency of the couple is primarily based on the thermoelectric properties of the materials selected for the couple. Therefore, these TE properties should exhibit minimal degradation during the operating period of the thermoelectric couples. The stability of the bonding is quantified by low contact resistances of the couple interfaces. In order to ensure high efficiency, the contact resistances of the bonding interfaces should be negligible. Sublimation suppression is important because the majority of thermoelectric materials used for power generation have peak figures of merit at temperatures where sublimation rates are high. Controlling sublimation is also essential to preserve the efficiency of the couple. During the course of this research, three different life tests were performed with Yb14MnSb11 coupons. TE properties of Yb14MnSb11 exhibited no degradation after 6 months of aging at 1273K, and the electrical contact resistance between a thin metallization layer and the Yb14MnSb11 remained negligible after 1500hr aging at 1273K. A sublimation suppression layer for Yb14MnSb11 was developed and demonstrated for more than 18 months with coupon testing at 1273K. These life test data indicate that thermoelectric elements based on Yb14MnSb11 are a promising technology for use in future high performance thermoelectric power generating couples.

thermoelectric couples↗
NASA NTRS1991

The Influence of Interstitial Ga and Interfacial Au (sub 2)P (sub 3) on the Electrical and Metallurgical Behavior of Au-Contacted III-V Semiconductors

The introduction of a very small amount of Ga into Au contact metallization on InP is shown to have a significant effect on both the metallurgical and electrical behavior of that contact system. Ga atoms in the interstices of the Au lattice are shown to be effective in preventing the solid state reactions that normally take place between Au and InP during contact sintering. In addition to suppressing the metallurgical interaction, the presence of small amounts of Ga is shown to cause an order of magnitude reduction in the specific contact resistivity. Evidence is presented that the reactions of GaP and GaAs with Au contacts are also drastically affected by the presence of Ga. The sintering behavior of the Au-GaP and the Au-GaAs systems (as contrasted with that of the Au-InP system) is explained as due to the presence of interstitial Ga in the contact metallization. Finally the large, two-to-three order of magnitude drop in the contact resistance that occurs in the Au-InP system upon sintering at 400 degrees Centigrade is shown to be a result of the formation of an Au (sub 2) P (sub 3) layer at the metal-semiconductor interface. Contact resistivities in the 10 (sup -6) ohm square centimeter range are obtained for as-deposited Au on InP when a thin (20 Angstrom) layer of Au (sub 2) P (sub 3) is introduced between the InP and the Au contacts.

Weizer, Victor G.↗
DOE OSTI2020

Conductive Adhesives for Metallization of Interdigitated Back Contact Solar Cells

The metallization and interconnection of Si solar cells to form a module is usually a multi-step process: cells are metallized individually, soldered into strings, and subsequently assembled into a module. Furthermore, the metallization process for individual cells must be compatible with the doped surfaces being contacted, which creates additional challenges when moving from diffused junctions to heterojunctions and/or passivated contact structures. To mitigate these problems and streamline module manufacturing for the case of interdigitated back contact (IBC) cell modules, we developed an approach wherein unmetallized IBC cells are bonded directly to a circuitized backsheet using a conductive adhesive (CA) that only conducts out-of-plane. The metal/CA/silicon stack is bonded by hot-pressing at 100-200 degrees C.For a CA consisting of ethylene vinyl acetate (EVA) filled with Ag-coated spheres or indium powder we find that contact resistivities in the range of 1-10 Wcm 2 are obtained, regardless of which conductive filler and which hot pressing parameters are used. XPS revealed that about 1-2 nm EVA residue bonds to the Si in these samples, suggesting the formation of an insulating barrier that is responsible for the high contact resistance. Using indium powder alone, improved contact resistivities <0.6 Wcm 2 , high shunt resistances, and an implied open-circuit voltage loss below 10 mV were obtained. Furthermore, a cost estimate is presented, indicating that substantial cost savings of up to $10/m 2 , or about $0.05/W DC , are possible through CA-based IBC module manufacturing.

14 SOLAR ENERGY↗
DOE OSTI2021

A robust high sensitivity scanning thermal probe for simultaneous microscale thermal and thermoelectric property mapping

Scanning Thermal Microscopy (SThM) provides efficient thermal property measurement with micro- or nanoscale spatial resolution. However, the sensitivity and accuracy of state-of-the-art thermal probes have been limited by excessive thermal contact resistance between the probe and sample. Introduced herein is a robust thermal microprobe that can increase the probe-sample contact force by more than two orders of magnitude, thereby reducing the probe-sample thermal contact resistance by as much as 96% and increasing measurement sensitivity by more than 240% compared to a commercial thermal probe with the same dimensions and measurement principle. The relationship between the probe-sample thermal contact resistance, thermal exchange radius, and sample thermal conductivity is determined experimentally. Simultaneous measurement of thermal conductivity and Seebeck coefficient with unprecedented sensitivity is demonstrated using the enhanced scanning thermal microprobe on samples of an extended range of thermal conductivity up to 18 W/m K, increasing the range of samples applicable to SThM when compared to the conventional commercial probe with diminished measurement sensitivity above ~10 W/m K. The probe is further demonstrated by simultaneously mapping thermal conductivity and Seebeck coefficient as a function of depth from the irradiated surface of an ion-irradiated bulk nanostructured thermoelectric material. In addition to enabling microscale thermal conductivity and Seebeck coefficient measurement of materials previously not applicable to SThM, the probe can also facilitate high-throughput characterization of combinatorial materials to aid the rapid discovery of compositions and processing conditions that yield highly desired thermal and thermoelectric properties.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Reliability improvements in tunable Pb1-xSnxSe diode lasers

Recent developments in the technology of Pb-salt diode lasers which have led to significant improvements in reliability and lifetime, and to improved operation at very long wavelengths are described. A combination of packaging and contacting-metallurgy improvements has led to diode lasers that are stable both in terms of temperature cycling and shelf-storage time. Lasers cycled over 500 times between 77 K and 300 K have exhibited no measurable changes in either electrical contact resistance or threshold current. Utilizing metallurgical contacting process, both lasers and experimental n-type and p-type bulk materials are shown to have electrical contact resistance values that are stable for shelf storage periods well in excess of one year. Problems and experiments which have led to devices with improved performance stability are discussed. Stable device configurations achieved for material compositions yielding lasers which operate continuously at wavelengths as long as 30.3 micrometers are described.

Linden, K. J.↗
DOE OSTI2020

Validation and Parametric Investigations Using a Lumped Thermal Parameter Model of an Internal Permanent Magnet Motor

One of the key challenges for the electric vehicle industry is to develop high-power-density electric motors. Achieving higher power density requires efficient heat removal from inside the motor. In order to improve thermal management, a multi-physics modeling framework that is able to accurately predict the behavior of the motor, while being computationally efficient, is essential. This paper first presents a detailed validation of a Lumped Parameter Thermal Network (LPTN) model of an Internal Permanent Magnet (IPM) synchronous motor within the commercially available Motor-CAD® modeling environment. The IPM motor’s stator is studied at steady state, and winding losses are generated by a constant DC current. The validation is based on temperature comparison with experimental data and with more detailed Finite Element Analysis (FEA). All critical input parameters of the LPTN are considered in detail for each layer of the stator, especially the contact resistances between the impregnation, liner, laminations and housing. Finally, a sensitivity analysis for each of the critical input parameters is provided. A maximum difference of 4% — for the highest temperature in the slot windings and the end windings — was found between the LPTN and the experimental data. Comparing the results from the LPTN and the FEA model, the maximum difference was 2% for the highest temperature in the slot windings and end windings. As for the LTPN sensitivity analysis, the thermal parameter with the highest sensitivity was found to be the liner-to-lamination contact resistance. The latter is often ignored in the literature, whereas its impact on temperature rise was found to be more significant than any other contact resistance within the stator.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Validation and Parametric Investigations Using a Lumped Thermal Parameter Model of an Internal Permanent Magnet Motor: Preprint

One of the key challenges for the electric vehicle industry is to develop high-power-density electric motors. Achieving higher power density requires efficient heat removal from inside the motor. In order to improve thermal management, a multi-physics modeling framework that is able to accurately predict the behavior of the motor, while being computationally efficient, is essential. This paper first presents a detailed validation of a Lumped Parameter Thermal Network (LPTN) model of an Internal Permanent Magnet (IPM) synchronous motor within the commercially available Motor-CAD® modeling environment. The IPM motor’s stator is studied at steady state, and winding losses are generated by a constant DC current. The validation is based on temperature comparison with experimental data and with more detailed Finite Element Analysis (FEA). All critical input parameters of the LPTN are considered in detail for each layer of the stator, especially the contact resistances between the impregnation, liner, laminations and housing. Finally, a sensitivity analysis for each of the critical input parameters is provided. A maximum difference of 4% - for the highest temperature in the slot windings and the end windings - was found between the LPTN and the experimental data. Comparing the results from the LPTN and the FEA model, the maximum difference was 2% for the highest temperature in the slot windings and end windings. As for the LTPN sensitivity analysis, the thermal parameter with the highest sensitivity was found to be the liner-to-lamination contact resistance. The latter is often ignored in the literature, whereas its impact on temperature rise was found to be more significant than any other contact resistance within the stator.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Temperature-Agnostic Pt/Au Ohmic Contacts on n -Type Gallium Nitride for Self-Aligned MOSFETs

Five alternative metals are investigated as ohmic contacts to n-GaN including Cr/Au, Mo/Au, Pt/Au, Pd/Au, and Ge/Au. Ti-based contacts are traditionally used for ohmic contacts on n-GaN. However, conventional Ti/Al/Ni/Au metallization is found to be incompatible with a self-aligned process for GaN trench MOSFETs due to wet etch restrictions. Therefore, an alternative metallization is needed that is unreactive to the etch chemistry used in the self-aligned process. Additionally, the contact should remain ohmic following anneal at 900 °C so that contact formation can precede the anneal required for p-dopant activation. Here, in the present work, an n-GaN bilayer, consisting of a thin heavily doped contact layer (n 0 = 1 × 10 20 cm −3 ) atop a thick lesser doped layer, is used to demonstrate ohmic contacts of alternative metals with low specific contact resistance and extended thermal budget. Cr/Au ohmic contacts are demonstrated up to anneal temperatures of 800 °C, an increase of 200 °C compared to the highest known reports for Cr/Au contacts on n-GaN. Pt/Au metallization is demonstrated as an ohmic contact to n-GaN for the first time and exhibits true temperature-agnostic behavior up to anneal temperatures of 900 °C with specific contact resistance that is near parity with Ti/Al/Ni/Au. The temperature-agnostic behavior of Pt/Au ohmic contacts on the n-GaN bilayer, in addition to chemical compatibility with the self-aligned process, positions Pt/Au contacts as a key enabling element for self-aligned trench MOSFETs on GaN.

Reilly, Kevin James [Sandia National Laboratories ↗
DOE OSTI2022

Non-Equilibrium Doping of Poly-Si:Ga/SiOx Passivating Contacts Solar Cells

In this contribution, we show that Ga-hyperdoped poly-Si/SiOx contacts are realized by pulsed laser annealing and post-hydrogenation. The motivation behind this work is to improve the inferior performance of boron-doped poly- Si/SiOx contacts when compared to the phosphorus-doped contacts. Here we used Ga as a novel p-type dopant to replace B, as B is known to accumulate at the interface between the oxide and the crystalline silicon and cause recombination. Due to a high diffusivity of Ga in oxide and a much higher segregation coefficient (Si:SiOx), Ga is shown to be immune to the oxide pileup phenomenon. However, Ga has a low solid solubility limit in Si (5x10^19 cm-3), which is not enough to form a low resistivity contact. To overcome this problem, we explored pulsed laser annealing via excimer laser by varying the laser energy densities and pulses. The passivation and electrical properties are studied systematically using photoluminescence (PL), secondary ion mass spectrometry (SIMS), and Van der Pauw-Hall measurements. We show an active Ga doping concentration above 1x10^20 cm^-3, which is above the solid solubility limit of Ga in Si. Good passivation quality is demonstrated with the highest implied Voc (iVoc) of 721 mV on single side polished samples. Furthermore, a low diode contact resistivity of ~22 m..omega.. cm^2 is obtained using Ti/Ag contacts, with minimal metal-to-semiconductor contact resistivity of 0.9 m..omega.. cm^2.

non-equilibrium doping↗
DOE OSTI2023

Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .

14 SOLAR ENERGY↗
DOE OSTI2024

Investigation of Contact Properties and Device Performance for Bifacial Double-Side Textured Silicon Solar Cells With Polysilicon Based Passivating Contacts

We investigate the impact of the surface morphology on the contact properties of phosphorus doped poly-Si layers. If the poly-Si layer on a textured surface remains intact after high-temperature metallization using a fire-through (FT) silver (Ag) paste, the J0,metal is not expected to increase significantly while the specific contact resistivity can improve with a textured surface. The contact properties of the FT Ag contacts to n+ poly-Si deposited on both textured and planar surfaces are investigated by measuring and evaluating ρc and J0,metal. The reasons for differences in contact resistance and recombination are further investigated with SEM imaging. Solar cells with n-type polysilicon based passivating contacts on the rear side are fabricated and characterized. The scientific approach used, and the insights presented in this work, help to understand the mechanisms and behavior of screen-printed and fired-through contacts to polysilicon layers deposited onto textured silicon surfaces.

Padhamnath, Pradeep (ORCID:0000000202510624)↗
NASA NTRS1993

Development of superconducting YBa2Cu3O(x) wires with low resistance electrical contacts

Materials exhibiting superconductivity above liquid nitrogen temperatures (77 K) will enable new applications of this phenomena. One of the first commercial applications of this technology will be superconducting magnets for medical imaging. However, a large number of aerospace applications of the high temperature superconducting materials have also been identified. These include magnetic suspension and balance of models in wind tunnels and resistanceless leads to anemometers. The development of superconducting wires fabricated from the ceramic materials is critical for these applications. The progress in application of a patented fiber process developed by Clemson University for the fabrication of superconducting wires is reviewed. The effect of particle size and heat treatment on the quality of materials is discussed. Recent advances made at Christopher Newport College in the development of micro-ohm resistance electrical contacts which are capable of carrying the highest reported direct current to this material is presented.

Buoncristiani, A. M.↗
DOE OSTI2021

Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing voltage drop at this junction is of particularly challenging and important. Despite numerous studies on contact resistance in 2D semiconductors, the exact nature of the buried interface under a 3D metal remains elusive and unclear. Herein, we report the direct observation of 2D semiconductor-metal buried interface using recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS 2 interface are correlated under variety of metal deposition conditions as well as type of metal contacts. We observe that direct evaporation of Au on MoS 2 induces large strain of ~5% in the MoS 2 which coupled with charge transfer leads to degenerate doping of the MoS 2 underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kΩ μm measured using local conductance probes. This approach was adopted to investigate MoS 2 -In/Au alloy interface, which records lowest contact resistance of 63 kΩ μm. Overall, our results highlight that the MoS 2 /Metal interface is very sensitive to method of contact making and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗