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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Silver antimony Ohmic contacts to moderately doped n-type germanium

A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effects of chemical intermixing on electrical and thermal contact conductances at metallized bismuth and antimony telluride interfaces

Tailoring electrical and thermal contact conductivities (Σ{sub c} and Γ{sub c}) across metallized pnictogen chalcogenide interfaces is key for realizing efficient thermoelectric devices. The authors report that Cu, Ni, Ti, and Ta diffusion and interfacial telluride formation with n-Bi{sub 2}Te{sub 3} and p-Sb{sub 2}Te{sub 3} influence both Σ{sub c} and Γ{sub c}. Cu metallization yields the highest Γ{sub c} and the lowest Σ{sub c}, correlating with maximal metal diffusion and copper telluride formation. Ni diffuses less and yields the highest Σ{sub c} with Sb{sub 2}Te{sub 3} due to p-type nickel telluride formation, which diminishes Σ{sub c} improvement with n-Bi{sub 2}Te{sub 3} interfaces. Ta and Ti contacts yield the lowest properties similar to that in Ni-metallized structures. These correlations between interfacial diffusion and phase formation on electronic and thermal transport properties will be important for devising suitable metallization for thermoelectric devices.

42 ENGINEERING↗
DOE OSTI2013

Growth and study of antimony selenide island films

Nanosized Sb{sub 2}Se{sub 3} island films are prepared by the incongruent evaporation of Sb{sub 1-x}Se{sub x} (x = 0.9 at fractions) thin films. The surface morphology of the structures is investigated by optical and atomic force microscopy (AFM). It is shown that an increase in the evaporation temperature leads to a decrease in the surface density of islands.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

Abstract Phase‐change random‐access memory (PCRAM) devices suffer from pronounced resistance drift originating from considerable structural relaxation of phase‐change materials (PCMs), which hinders current developments of high‐capacity memory and high‐parallelism computing that both need reliable multibit programming. This work realizes that compositional simplification and geometrical miniaturization of traditional GeSbTe‐like PCMs are feasible routes to suppress relaxation. While to date, the aging mechanisms of the simplest PCM, Sb, at nanoscale, have not yet been unveiled. Here, this work demonstrates that in an optimal thickness of only 4 nm, the thin Sb film can enable a precise multilevel programming with ultralow resistance drift coefficients, in a regime of ≈10 −4 –10 −3 . This advancement is mainly owed to the slightly changed Peierls distortion in Sb and the less‐distorted octahedral‐like atomic configurations across the Sb/SiO 2 interfaces. This work highlights a new indispensable approach, interfacial regulation of nanoscale PCMs, for pursuing ultimately reliable resistance control in aggressively‐miniaturized PCRAM devices, to boost the storage and computing efficiencies substantially.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2012

Two new ternary lanthanide antimony chalcogenides: Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.68} containing chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anions

Dark red and dark brown crystals of Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 8}Sb{sub 4}Se{sub 11.68}, respectively, were obtained from the reaction of the elements in Sb{sub 2}Q{sub 3} (Q=S, Se) fluxes. Both non-stoichiometric compounds are orthorhombic and crystallize in the same space group Pnnm, with two formula units per unit cell (a=12.446(2), b=5.341(1), c=12.058(2) for sulfide and a=13.126(2), b=5.623(1), c=12.499(2) for the selenide). Their crystal structures are dominated by lanthanide-chalcogenide polyhedra (CN=7 and 8), which share corners, edges, triangular- and square-faces to form a three-dimensional framework embedding antinomy cations. The latter are coordinated by three sulfide anions with 5(1+2+2) secondary contacts forming basically infinite chains running along [0 1 0]. The chalcogens in both compounds form chalcogenide Q{sup 2-} and dichalcogenide (Q{sub 2}){sup 2-} anionic units. The optical analysis made on those compounds shows that both are semiconductors with band gap of 1.71 and 1.22 eV for Yb{sub 4}Sb{sub 2}S{sub 11.25} and Tm{sub 4}Sb{sub 2}Se{sub 11.75,} respectively. - Graphical Abstract: The crystal structure of Yb{sub 4}Sb{sub 2}S{sub 11} viewed along the [0 1 0]. Highlights: Black-Right-Pointing-Pointer Lanthanide chalcogenides. Black-Right-Pointing-Pointer Semiconductors. Black-Right-Pointing-Pointer Tunnel structures. Black-Right-Pointing-Pointer Lone-pair effects.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Novel superstructure of the rocksalt type and element distribution in germanium tin antimony tellurides

A superstructure of the rocksalt-type observed in quenched CVT-grown single crystals of Ge{sub 3.25(7)}Sn{sub 1.10(3)}Sb{sub 1.10(3)}Te{sub 6} was elucidated by X-ray diffraction using fourfold twinned crystals (space group P3{sup ¯}m1, a=4.280(1) Å, c=20.966(3) Å). The structure is built up of distorted rocksalt-type building blocks typical for long-range ordered GST materials and substitution variants thereof. In contrast to those phases, an exclusive ABC-type cubic stacking sequence of the Te-atom layers is present. High-resolution electron microscopy reveals spheroidal domains with this structure (average diameter 25 nm) whose stacking direction is perpendicular to the 〈1 1 1〉 directions of the basic rocksalt-type structure. Additional slab-like domains with a lateral extension up to 1 µm occasionally result in a hierarchical structure motif. Due to the similar electron counts of the elements involved, resonant diffraction was used in order to elucidate the element distribution in rocksalt-type building blocks of the stable layered compound 39R-Ge{sub 3}SnSb{sub 2}Te{sub 7} (R3{sup ¯}m, a=4.24990(4) Å, c=73.4677(9) Å). Sb tends to occupy the atom site close to the van der Waals gaps while Ge concentrates in the center of the building blocks. - Graphical abstract: High-resolution transmission electron micrograph, SAED pattern and reciprocal lattice section of X-ray single crystal data of Ge{sub 3.25}Sn{sub 1.1}Sb{sub 1.1}Te{sub 6} with an 11P-type superstructure of the rocksalt type. - Highlights: • A novel superstructure of the rocksalt-type in the system Ge–Sn–Sb–Te is elucidated. • It combines the cubic stacking of the HT phase with building blocks of the RT phase. • It indicates the ordering mechanism during the phase transition of GST materials. • A hierarchical structure motif is promising with respect to the reduction of κ{sub L}. • Resonant diffraction reveals the element distribution in 39R-Ge{sub 3}SnSb{sub 2}Te{sub 7}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Temperature-dependent ordering phenomena in single crystals of germanium antimony tellurides

The temperature-dependent behavior of quenched single-crystalline (GeTe){sub n}Sb{sub 2}Te{sub 3} (n~2.8, n~5 and n~11) was investigated by semiquantitative modeling of diffuse X-ray scattering. The structure at room temperature exhibits trigonal twin domains, each comprising a stacking-disordered sequence of distorted rocksalt-type slabs with variable thicknesses. Ge and Sb share the cation position and vacancies are partially ordered in defect layers (van der Waals gaps) between the slabs. The average structure determined with resonant diffraction data corresponds to a rocksalt-type structure whose cation position is split along the stacking direction. Upon heating, cation ordering leads to a metastable superstructure of the rocksalt type at ~400 °C, which transforms to a rocksalt-type high-temperature phase with randomly distributed cations and vacancies at ~500 °C; this structure was also refined using resonant diffraction. Cooling at high or intermediate rates does not yield the long-range ordered phase, but directly leads to the twinned disordered phase. - Graphical abstract: Development of the diffraction patterns of (GeTe){sub ~11}Sb{sub 2}Te{sub 3} upon heating; the insets symbolically sketch the real structure at the corresponding temperatures. - Highlights: • The structure of disordered (GeTe){sub n}Sb{sub 2}Te{sub 3} is described as a function of temperature. • Structural changes are tracked by modeling diffuse X-ray scattering. • Quenched crystals exhibit distorted NaCl-type slabs with different thicknesses. • Vacancy ordering upon heating leads to a metastable superstructure of the NaCl type. • Further heating leads to an undistorted disordered NaCl-type high-temperature phase.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

First-principles study lone-pair effects of Sb (III)-S chromophore influence on SHG response in quaternary potassium containing silver antimony sulfides

First-principles studies of the geometric structures, electronic structures and optical properties of non-centrosymmetrical (NCS) KAg{sub 2}SbS{sub 4}, K{sub 2}AgSbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} and centrosymmetrical (CS) KAg{sub 2}SbS{sub 3} and K{sub 3}Ag{sub 9}Sb{sub 4}S{sub 12} have been performed by means of density functional theory. It is indicated that although they have similarity in their anionic groups and, the electronic structures, prominent features of the optical anisotropy or second-order nonlinear optical (NLO) susceptibilities are apparently different. The calculated birefringences are 0.0537, 0.0343, 0.1324, 0.2217 and 0.0604 which are attributed to the different anionic groups [SbS{sub 3}] and triangles [AgS{sub 3}]. Also, the calculated NLO responses are about 0.5×, 1.0× and 2.0× times than that commercial AgGaS{sub 2} (AGS, d{sub 36}=11 pm/V) for K{sub 2}AgSbS{sub 4}, KAg{sub 2}SbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7}, respectively. In comparison with the absolute magnitude of second harmonic generation (SHG) coefficients, the order K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7}>KAg{sub 2}SbS{sub 4}>K{sub 2}AgSbS{sub 4} is clearly established in the SHG response. Further analysis based on the real-space atom-cutting method reveals that the main sources of the SHG properties of these compounds are from the Sb-S group, especially K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} is mainly attributed to the lone pair stereochemical activity of Sb (III)-S group. - Graphical abstract: Compounds K{sub 2}AgSbS{sub 4}, KAg{sub 2}SbS{sub 4} and K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} exhibit second-order NLO response: 15×, 30× and 62× times than that KDP (KH{sub 2}PO{sub 4}, d{sub 36}=0.39 pm/V), respectively. First-principles methods reveal that the large SHG response of K{sub 2}Ag{sub 3}Sb{sub 3}S{sub 7} is dominated by the Sb-S chromophore with lone pairs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Refinement of Mg{sub 2}Si reinforcement in a commercial Al–20%Mg{sub 2}Si in-situ composite with bismuth, antimony and strontium

Refinement by addition elements of Al–Mg{sub 2}Si alloys is known to result in a change of primary Mg{sub 2}Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg{sub 2}Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg{sub 2}Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg{sub 2}Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg{sub 2}Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg{sub 2}Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Thin films of copper antimony sulfide: A photovoltaic absorber material

Highlights: • CuSbS{sub 2} thin films were prepared by heating Sb{sub 2}S{sub 3}/Cu layers. • Analyzed the structure, composition, optical, and electrical properties. • PV structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag were formed at different conditions. • The PV parameters (J{sub sc}, V{sub oc}, and FF) were evaluated from the J–V characteristics. • J{sub sc}: 0.52–3.20 mA/cm{sup 2}, V{sub oc}:187–323 mV, FF: 0.27–0.48 were obtained. - Abstract: In this work, we report preparation and characterization of CuSbS{sub 2} thin films by heating glass/Sb{sub 2}S{sub 3}/Cu layers and their use as absorber material in photovoltaic structures: glass/SnO{sub 2}:F/n-CdS/p-CuSbS{sub 2}/C/Ag. The Sb{sub 2}S{sub 3} thin films of 600 nm were prepared by chemical bath deposition on which copper thin films of 50 nm were thermally evaporated, and the glass/Sb{sub 2}S{sub 3}/Cu multilayers were heated in vacuum at different temperatures. X-ray diffraction analysis showed the formation of orthorhombic CuSbS{sub 2} after heating the precursor layers. Studies on identification and chemical state of the elements were done using X-ray photoelectron spectroscopy. The optical band gap of the CuSbS{sub 2} thin films was 1.55 eV and the thin films were photoconductive. The photovoltaic parameters of the devices using CuSbS{sub 2} as absorber and CdS as window layer were evaluated from the J–V curves, yielding J{sub sc}, V{sub oc}, and FF values in the range of 0.52–3.20 mA/cm{sup 2}, 187–323 mV, and 0.27–0.48, respectively, under illumination of AM1.5 radiation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Stable bismuth-antimony alloy cathode with a conversion-dissolution/deposition mechanism for high-performance zinc batteries

Although a large number of intercalation cathode materials for aqueous Zn batteries have been reported, limited intercalation capacity precludes achieving a higher energy density. Here, for this work, we develop a high-performance aqueous Zn battery based on BiSb alloy (Bi 0.5 Sb 0.5 ) using a high-concentrated strong-basic polyelectrolyte. We demonstrate that a conversion-dissolution/deposition electrochemical mechanism (BiSb ↔ Bi + SbO 2 – ↔ Bi + SbO 3 – ↔ Bi 2 O 3 ) through in situ X-ray diffraction (XRD), Raman, and ex-situ X-ray photoelectron spectrometry (XPS) characterizations with the help of density functional theory calculations. The BiSb cathode delivers large capacity of 512 mAh g –1 at 0.3 Ag –1 and superior rate capability of 90 mAh g –1 even at 20 Ag –1 , and long-term cyclability with capacity retentions of 184 mAh g –1 after 600 cycles at 0.5 Ag –1 and 130 mAh g –1 after 1300 cycles at 1 Ag –1 . Remarkably, even at temperatures as low as –10 and –20 °C, capacities of 210 and 197 mAh g –1 are reserved at 1 Ag –1 , respectively. Moreover, the prepared pouch Zn//BiSb battery delivers a high energy density of 303 Wh kg –1 BiSb at 0.3 Ag –1 . When coupled with a high concentration polyelectrolyte, the Zn/BiSb battery exhibits an excellent performance over a wide temperature range (–40 to 40 °C). Our research reveals the metal cathode is promising for Zn batteries to achieve a high performance with the unique mechanism and alloys can be an effective approach to stabilize metal electrodes for cycling.

25 ENERGY STORAGE↗
DOE OSTI2015

Coupling In Situ TEM and Ex Situ Analysis to Understand Heterogeneous Sodiation of Antimony

Here, we employed an in situ electrochemical cell in the transmission electron microscope (TEM) together with ex situ time-of-flight, secondary-ion mass spectrometry (TOF-SIMS) depth profiling, and FIB–helium ion scanning microscope (HIM) imaging to detail the structural and compositional changes associated with Na/Na+ charging/discharging of 50 and 100 nm thin films of Sb. TOF-SIMS on a partially sodiated 100 nm Sb film gives a Na signal that progressively decreases toward the current collector, indicating that sodiation does not proceed uniformly. This heterogeneity will lead to local volumetric expansion gradients that would in turn serve as a major source of intrinsic stress in the microstructure. In situ TEM shows time-dependent buckling and localized separation of the sodiated films from their TiN-Ge nanowire support, which is a mechanism of stress-relaxation. Localized horizontal fracture does not occur directly at the interface, but rather at a short distance away within the bulk of the Sb. HIM images of FIB cross sections taken from sodiated half-cells, electrically disconnected, and aged at room temperature, demonstrate nonuniform film swelling and the onset of analogous through-bulk separation. TOF-SIMS highlights time-dependent segregation of Na within the structure, both to the film-current collector interface and to the film surface where a solid electrolyte interphase (SEI) exists, agreeing with the electrochemical impedance results that show time-dependent increase of the films’ charge transfer resistance. We propose that Na segregation serves as a secondary source of stress relief, which occurs over somewhat longer time scales.

25 ENERGY STORAGE↗
DOE OSTI2019

Interpreting Electrochemical and Chemical Sodiation Mechanisms and Kinetics in Tin Antimony Battery Anodes Using in Situ Transmission Electron Microscopy and Computational Methods

Intermetallic compounds such as SnSb are promising anode materials for sodium ion batteries; however, their nanoscale sodiation mechanisms are not well understood. Here, we used a combination of in situ transmission electron microscopy (TEM), first-principles electronic structure calculations, computational thermodynamic modeling, and phase-field simulations to reveal the sodiation mechanisms and to quantify microstructural effects contributing to the underlying reaction kinetics in SnSb electrodes. During in situ sodiation experiments, the nanocrystalline SnSb thin films underwent a rapid amorphous phase transformation upon sodiation, as determined by in situ TEM and electron diffraction experiments. The Na + diffusion coefficients were measured with and without an external electrical bias, and the data showed that an applied potential increased Na + diffusion by an order of magnitude compared to solid-state diffusion. Furthermore, there was a distinct decrease in sodium diffusion upon the formation of the amorphous phase that resulted from a change in the local structure and grain boundaries. To further understand how the Na + transport mechanism correlated with the changes observed in the SnSb thin films, phase-field modeling was used, which considered sodium diffusion within the grain boundaries together with their evolution and stress–strain state. As a result, these findings enhance our understanding of sodiation mechanisms within intermetallic anode materials for sodium ion battery applications.

25 ENERGY STORAGE↗
DOE OSTI2016

Antimony(III) Sulfide Thin Films as a Photoanode Material in Photocatalytic Water Splitting

Here, we introduce exploratory investigations on the performance of thermally evaporated Sb 2 S 3 thin film photoanodes for solar-assisted water splitting applications. With a bandgap of 1.72 eV, a 250 nm thick Sb 2 S 3 photoanode showed a saturation photocurrent density of ~600 µA cm -2 measured at 1.0 V vs. reversible hydrogen electrode (RHE) in 0.1 M Na 2 SO 4 under 1-sun illumination, with an onset potential of ~0.25 V vs. RHE. However, subsequent photodegradation studies revealed that the material dissolves relatively quickly with the application of both illumination and bias. Nonetheless, Sb 2 S 3 does have the advantage of having a relatively low optimal fabrication temperature of 300 °C and thus may have utility as a top cell absorber of a tandem device where the bottom cell is temperature sensitive, if protected from corrosion. Thus, we characterized relevant aspects of the material in an attempt to explain the large difference between the theoretical maximum and measured current density. From our characterization it is believed that the photocatalytic efficiency of this material can be improved by modifying the surface to reduce optical reflection and addressing inherent issues such as high electrical resistivity and surface defects.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Durian-Inspired Design of Bismuth–Antimony Alloy Arrays for Robust Sodium Storage

Sodium-ion batteries have attracted widespread attention for cost-effective and large-scale electric energy storage. However, their practical deployment has been largely retarded by the lack of choice of efficient anode materials featuring large capacity and electrochemical stability and robustness. Herein, we report a durian-inspired design and template-free fabrication of a robust sodium anode based on triangular pyramid arrays of Bi 0.75 Sb 0.25 alloy electrodeposited on Cu substrates. The Bi 0.75 Sb 0.25 arrays exhibit an appreciable electrochemical robustness for sodium storage, sustaining a reversible capability 335 mAh g –1 at a high rate of 2.5 A g –1 and 87% of the initial capacity over 2000 cycles. We further demonstrate the applicability of the Bi 0.75 Sb 0.25 array anode in sodium full cells by pairing it with a Na 3 V 2 (PO 4 ) 3 /C cathode. This full cell achieves a high specific energy of 203 Wh kg –1 (based on both active electrodes). Such an enhanced performance is attributed to the thorny-durian-like architecture and bimetallic alloy composition. In conclusion, the pyramid tip induces ion enrichment for rapid charge-transfer reaction, while the alloy design reduces the electrode volume swelling for stable Na cycling.

25 ENERGY STORAGE↗