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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Silicon Nanosheets as Candidates for Silicon-Based Optoelectronics

The growth in computational ability over the past decades has positively impacted global development, the economy, healthcare, and science. As on-chip components are approaching the atomic scale, alternative paradigms are needed to address the thermal and electronic issues that impose bottlenecks for computing. One approach to address this is with optoelectronics. However, silicon—the backbone of microelectronics—is a poor choice due to its indirect bandgap, while existing optoelectronic materials are incompatible with CMOS infrastructure. Monolayer silicon nanosheets (SiNSs) are an intriguing material that exhibit photoluminescence, and are compositionally-compatible with the CMOS process. Here, we synthesize and characterize monolayer SiNSs, and show spectroscopic evidence that they exhibit a quasi-direct bandgap, which is corroborated by DFT calculations. We probe their thermal stability, demonstrating their structure and photoluminescence are stable beyond the required operating temperatures for computing applications. These optoelectronic properties, CMOS-compatibility, and stability make SiNSs a viable candidate for silicon-based photonics.

Ryan, Bradley↗
DOE OSTI2023

Milestone report for MRT 8479: High Yield Xray Imager Preliminary Design Review

The High Yield Xray Imager (HYXI) is a new NIF target diagnostic system currently under development. The goal of HYXI is to provide high-fidelity, high temporal resolution x-ray imaging capability on high yield NIF implosions at 10MJ and above. The HYXI instrument design concept is based on the combination of two technologies that have been successfully utilized at the NIF on previous instruments, electron pulse-dilation and hybrid-CMOS sensor imaging. The combination of these two techniques will give HYXI sufficient data quality to ascertain differences in hot spot formation dynamics between high and low yield implosions. This information will highlight the critical hot spot conditions needed for ignition and burn. The HYXI design leverages the successful operation of the PDIXI x-ray imager at the NIF on multi-MJ yield shots. Also, a new radiation tolerance CMOS imaging array is being developed to eliminate the significant background noise which limits the data quality of PDIXI. The HYXI Preliminary Design Review was completed at the end of Q4 FY23. The HYXI project is a multi-year effort with a phased approach to be bring up system functionality over time in parallel with the development and fabrication effort of the new CMOS imaging array. Initial time integrated NIF data will be collected in Q2 FY25, first time resolved imaging with Daedalus starting in Q2 FY26 and the final performance qualification of the complete HYXI system is scheduled for Q2 FY27.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

High Yield Xray Imager Final Design Review

The High Yield Xray Imager (HYXI) is a new NIF target diagnostic system currently under development. The goal of HYXI is to provide high-fidelity, high temporal resolution x-ray imaging capability on high yield NIF implosions at 10MJ and above. The HYXI instrument design concept is based on the combination of two technologies that have been successfully utilized at the NIF on previous instruments, electron pulse-dilation and hybrid-CMOS sensor imaging. The combination of these two techniques will give HYXI sufficient data quality to ascertain differences in hot spot formation dynamics between high and low yield implosions. This information will highlight the critical hot spot conditions needed for ignition and burn. The HYXI design leverages the successful operation of the PDIXI x-ray imager at the NIF on multi MJ yield shots. A new radiation tolerant CMOS imaging array (HYPERION) is being developed to eliminate the significant background noise which limits the data quality of PDIXI. We successfully placed the contract with Advanced hCMOS Systems (AHS) to develop the HYPERION sensor, which fulfils our criteria to place long lead time item procurements by end of FY24. The HYXI Final Design Review was completed at the end of Q4 FY24 (Sep 24 th and Sep 30 th ). The HYXI project is a multi-year effort with a phased approach to be bring up system functionality over time in parallel with the development and fabrication effort of the HYPERION CMOS imaging array. In Phase 1, time-integrated x-ray images on NIF DT experiments will be collected starting in Q3 FY25. In Phase 2 of the project, time-resolved imaging with HYXI utilizing a spare microchannel plate detector back-end will begin in Q3 FY26. Phase 3 concludes the project with the installation of the HYPERION sensor array and the final performance qualification of the HYXI instrument which is scheduled for Q3 FY27 as discussed in the PDR and MRT report on this project in FY23.

42 ENGINEERING↗
DOE OSTI2023

Wireless System Development for GaN-Based Transmitters for Advanced Nuclear Reactor Environments

The market for consumer electronics is dominated by Si-based electronics. Many Si-based complementary metal–oxide–semiconductor (CMOS) devices are reaching their limitations in terms of switching frequencies, voltages, currents, and temperatures. Furthermore, these devices are widely known to be susceptible to ionizing radiation and neutrons. Advanced nuclear reactors, especially microreactors and small modular reactors, require wireless electronics that can survive larger neutron and gamma doses than Si CMOS. Because of their size, electronics will need to be placed closer to the reactor cores, and cabling capabilities may be limited. However, GaN high-electron-mobility transistors (HEMTs) have been shown to switch faster with higher gains, and they can achieve current and voltage limits beyond traditional Si CMOS. However, they have less market maturity and have undergone less testing. These GaN HEMTs have been shown to survive ionizing radiation with little effects, but the effects of neutron radiation remain widely unknown. In this report, a wireless electronic system capable of supporting multiple radiation-hardened (rad-hard) sensors is presented. The proposed transmission scheme was designed to be simple to increase the likelihood of success in the immature GaN HEMT process and in high-radiation environments. The transmission system was tested using software-defined radios to emulate the transmission scheme before the transmitter circuitry in the GaN process was developed.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2025

28nm front end ASIC and 12” LGADs for 3D integration

The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (≈10 μm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present the design and results from a 28 nm CMOS ASIC prototype, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. We also report on the co-design and characterization of reticle-scale LGAD sensors with 50 μm and 100 μm pixels and introduce the next 10k-pixel ASIC designed for full 3D integration. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.

England, Troy [Fermilab] (ORCID:0000000154405255)↗
DOE OSTI2026

Two 28-nm front-end ASICs for ultra-fine spatial resolution and precision timing to be 3D integrated with 12 LGADs

The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (about 10 µm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present two 28 nm CMOS ASIC prototypes, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.

England, Troy [Fermilab] (ORCID:0000000154405255)↗
DOE OSTI2026

Two 28-nm front-end ASICs for ultra-fine spatial resolution and precision timing to be 3D integrated with 12 LGADs

The 3DIntSenS Collaboration—a joint effort between SLAC, Fermilab, and LLNL—is developing enabling technologies for next-generation radiation imaging detectors that combine ultra-fine spatial resolution (about 10 µm) with precision timing (<20 ps), while maintaining low power <1 W/cm2 and high data throughput. The approach leverages 3D integration between advanced CMOS readout ASICs and finely pixelated LGAD sensors to achieve the performance and scalability required for large-area, high-rate applications. High-granularity, precision-timing detectors are essential for scientific advances in HEP, NP, BES, and FES, but widespread adoption is limited by the cost and complexity of 3D integration. To close this gap, the collaboration is developing LGAD sensors compatible with 12-inch commercial CMOS processes, enabling cost-effective integration with high-performance ASICs under development. We present two 28 nm CMOS ASIC prototypes, including a low-jitter front end, and in-pixel TDC demonstrating sub-10 ps timing resolution. These advances represent a critical step toward scalable, high-resolution radiation imaging systems for future scientific instrumentation.

England, Troy [Fermilab] (ORCID:0000000154405255)↗
DOE OSTI2024

Digital Miniature Cathode Ray Magnetometer

In this study, we introduce the concept and construction of an innovative Digital Miniature Cathode Ray Magnetometer designed for the precise detection of magnetic fields. This device addresses several limitations inherent to magnetic probes such as D.C. offset, nonlinearity, temperature drift, sensor aging, and the need for frequent recalibration, while capable of operating in a wide range of magnetic fields. The core principle of this device involves the utilization of a charged particle beam as the sensitivity medium. The system leverages the interaction of an electron beam with a scintillator material, which then emits visible light that is captured by an imager. The emitted scintillation light is captured by a CMOS sensor. This sensor not only records the scintillation light but also accurately determines the position of the electron beam, providing invaluable spatial information crucial for magnetic field mapping. The key innovation lies in the combination of electron beam projection, CMOS imager scintillation-based detection, and digital image signal processing. By employing this synergy, the magnetometer achieves remarkable accuracy, sensitivity and dynamic range. The precise position registration enabled by the CMOS sensor further enhances the device’s utility in capturing complex magnetic field patterns, allowing for 2D field mapping. In this work, the optimization of the probe’s performance is tailored for applications related to the characterization of insertion devices in light sources, including undulators.

Turqueti, Marcos↗
DOE OSTI2026

DC Cryogenic Modeling of Open-Source SkyWater 130 nm MOSFETs at 77 K Using BSIM4

Cryogenic applications in high-energy physics (HEP) demand reliable, low-power CMOS electronics capable of operating at liquid nitrogen temperatures (77 K). The open-source SkyWater 130nm (SKY130) CMOS process has previously been shown to operate at temperatures as low as 4 K making it a promising candidate for HEP applications. In this work, we characterize and model SKY130 low-threshold voltage transistors at 77 K, which is a temperature commonly used in modeling applications for liquid argon detectors. DC characteristic measurements were performed at both room temperature and liquid nitrogen temperature. We created a cryogenic modeling approach to produce a SPICE-compatible, isothermal BSIM4-based model for select transistor sizes at 77 K. The resulting model agrees with data at 77 K with an average error on the order of 20% (relative RMS) and shows no dependence on drain voltage. Due to the open-source nature of SKY130, we have made our models publicly available on Github. We hope this work will continue the trend for democratizing circuit design at cryogenic temperatures in high-energy physics by enabling open access to accurate cryogenic CMOS device models at 77 K.

Beall, F. [Texas U., Arlington]↗
DOE OSTI2026

Beam test performance of AstroPix sensor with 120 GeV protons

AstroPix is a High-Voltage CMOS Monolithic Active Pixel Sensor (HV-CMOS MAPS) developed for precision gamma-ray imaging and spectroscopy in the medium-energy regime, as well as for precise shower imaging and tracking in the Barrel Imaging Calorimeter (BIC) of the Electron Proton/Ion Collider (ePIC) detector at the future Electron–Ion Collider (EIC). We present beam test results of the AstroPix_v3 sensor using a 120 GeV proton beam at the Fermilab Test Beam Facility (FTBF), performed as part of the broader experimental campaign for the BIC prototype calorimeter. The sensor’s 500 µm pixel pitch enabled precise measurement of the beam profile, providing important information for the calorimeter performance studies. Using the measured 120 GeV proton data, we measure the energy deposit of minimum ionizing particles (MIP) and use them to extract the corresponding effective depletion depth at a single bias voltage of −150 V .

AstroPix↗
DOE OSTI2021

A 24-Channel Digitizer With a JESD204B-Compliant Serial Interface for High-Speed Detectors

In this report a 24-channel application-specific integrated circuit (ASIC) for the readout of high-speed CMOS active pixel sensors for charged particle detection is presented. The chip comprises 24 preamplifiers, 24 distinct 12-bit, 25 MSPS Pipelined analog-to-digital converters (ADCs) with self-calibration, an internal phase-locked loop (PLL), and a 3 Gbps serial interface that conforms to the JESD204B standard. To simplify interfacing with a variety of sensors, the ASIC also includes an automatic offset calibration loop. The high level of integration of the ASIC reduces overall system cost and area, and exploiting the signal characteristics of the image sensor allows the ADC to be optimized for reduced power dissipation. The use of an integrated serializer and an industry standard protocol simplifies integration of the ASIC into a complete camera system. The ASIC, called the High-Speed Image Preprocessor Targeted for Electron Readout, or HIPSTER, with a die area of 64.26 mm 2 , is packaged in a 480-ball grid array (BGA) and is fabricated in 180-nm CMOS technology. HIPSTER achieves typical differential nonlinearity (DNL) < 0.55 LSB, input-referred thermal noise of $114.5 μV-rms, and a bit error rate (BER) of better than 10-14. The power dissipation is 98 mW/channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Silicon-On-Silicon Carbide Platform for Integrated Photonics

Silicon carbide (SiC)'s nonlinear optical properties and applications to quantum information have recently brought attention to its potential as an integrated photonics platform. However, despite its many excellent material properties, such as large thermal conductivity, wide transparency window, and strong optical nonlinearities, it is generally a difficult material for microfabrication. Here, it is shown that directly bonded silicon-on-silicon carbide can be a high-performing hybrid photonics platform that does not require the need to form SiC membranes or directly pattern in SiC. The optimized bonding method yields defect-free, uniform films with minimal oxide at the silicon–silicon–carbide interface. Ring resonators are patterned into the silicon layer with standard, complimentary metal–oxide–semiconductor (CMOS) compatible (Si) fabrication and measure room-temperature, near-infrared quality factors exceeding 10 5 . The corresponding propagation loss is 5.7 dB cm -1 . The process offers a wafer-scalable pathway to the integration of SiC photonics into CMOS devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Chip-integrated metasurface full-Stokes polarimetric imaging sensor

Abstract Polarimetric imaging has a wide range of applications for uncovering features invisible to human eyes and conventional imaging sensors. Chip-integrated, fast, cost-effective, and accurate full-Stokes polarimetric imaging sensors are highly desirable in many applications, which, however, remain elusive due to fundamental material limitations. Here we present a chip-integrated Meta surface-based Full-Stokes Polar imetric Im aging sensor (MetaPolarIm) realized by integrating an ultrathin (~600 nm) metasurface polarization filter array (MPFA) onto a visible imaging sensor with CMOS compatible fabrication processes. The MPFA is featured with broadband dielectric-metal hybrid chiral metasurfaces and double-layer nanograting polarizers. This chip-integrated polarimetric imaging sensor enables single-shot full-Stokes imaging (speed limited by the CMOS imager) with the most compact form factor, records high measurement accuracy, dual-color operation (green and red) and a field of view up to 40 degrees. MetaPolarIm holds great promise to enable transformative applications in autonomous vision, industry inspection, space exploration, medical imaging and diagnosis.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Nanophotonic waveguide chip-to-world beam scanning

A seamless chip-to-world photonic interface enables broad advancements in optical ranging, display, communication, computation and quantum information science. The ideal solution enables two-dimensional scanning of a diffraction-limited beam from anywhere on a photonic integrated circuit to a large number of resolvable spots. Current beam-scanning technologies are limited by a fundamental trade-off: photonic-integrated-circuits with diffractive optics offer scalability but have poor mode quality, whereas inertially limited micromechanical scanners provide high-quality beams but lack scalable integration. Here we report a photonic ski-jump—a nanoscale waveguide monolithically integrated on a piezoelectric cantilever—to overcome these limitations. It passively curls ~90° out-of-plane within a less-than-0.1 mm 2 footprint, emits a submicrometre, broadband diffraction-limited beam, and exhibits kilohertz-rate mechanical resonances with quality factors of over 10,000. Fabricated in a volume complementary metal–oxide–semiconductor (CMOS) foundry, our device enables scalable two-dimensional beam scanning. Driven on-resonance at CMOS-level voltages, it achieves a footprint-adjusted spot rate of 68.6 mega spots s –1 mm–², exceeding state-of-the-art micro-electro-mechanical systems mirrors by more than 50-fold, which is sufficient for one million pixels at 100 Hz from an approximately 1.5 mm diameter footprint. We demonstrate full-colour image and video projection, and single-photon initialization and readout from silicon vacancy centres in diamond. Finally, by demonstrating uniformity across a 64 ski-jump array, we establish a pathway to achieving greater than one gigaspot resolution at kilohertz rates within a sub-5-cm-diameter footprint, creating a seamless optical pipeline between integrated photonic processors and the free-space world.

Displays↗
DOE OSTI2021

Billion-pixel x-ray camera (BiPC-X)

The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 μm) enable billion-pixel x-ray cameras (BiPC-X) based on commercial complementary metal–oxide–semiconductor (CMOS) imaging sensors. We describe BiPC-X designs and prototype construction based on flexible tiling of commercial CMOS imaging sensors with millions of pixels. Device models are given for direct detection of low energy x rays (<10 keV) and indirect detection of higher energies using scintillators. Modified Birks’s law is proposed for light yield non-proportionality in scintillators as a function of x-ray energy. Single x-ray sensitivity and spatial resolution have been validated experimentally using a laboratory x-ray source and the Argonne Advanced Photon Source. Possible applications include wide field-of-view or large x-ray aperture measurements in high-temperature plasmas, the state-of-the-art synchrotron, x-ray free electron laser, and pulsed power facilities.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Detector thickness effects on nanosecond-gated imager response

Hybrid CMOS multi-frame imagers with exposure times down to ~2 ns have made significant impacts in high energy density physics and inertial confinement fusion research. The detector thickness is a key parameter in both detector quantum efficiency and temporal response. The Icarus hybrid CMOS imager has been fabricated with Si detector thicknesses of 8, 25, and 100 µm. The temporal response of imaging sensors with exposure time down to 2 ns has been examined and compared to directly measured photodiode current. The 100-μm thick variant displays extended features related to charge carrier collection and is more susceptible to field collapse. Here, we also demonstrate charge collection time effects on spatial response.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Thermally generated magnonic spin currents in a polycrystalline gadolinium iron garnet thin film with perpendicular magnetic anisotropy

Rare-earth iron garnets (REIGs) are the benchmark systems for magnonics, including the longitudinal spin Seebeck effect (LSSE). While most research has focused on single-crystalline REIGs on complimentary garnet substrates, moving to more, cost-effective complementary metal-oxide semiconductor (CMOS)-compatible substrates is important to integrate REIG thin films with existing technology. In this regard, we grow a 130 nm-thick polycrystalline gadolinium iron garnet (GdIG) film on the Si/SiO2 substrate and investigate the temperature-dependent LSSE. Interestingly, the polycrystalline GdIG film exhibits perpendicular magnetic anisotropy (PMA) at room temperature which is induced by tensile in-plane (IP)-strain originating from the thermal-expansion mismatch between the GdIG film and the substrate during rapid thermal annealing. Further, a spin-reorientation transition from the out-of-plane IP direction below TS = 180 K is observed. Additionally, the film reveals a magnetic compensation temperature, TComp, of ≈240 K. The LSSE voltage not only demonstrates a sign-inversion around TComp, but also shows noticeable changes around TS. As compared to a single-crystalline GdIG film, the lower LSSE voltage for the polycrystalline GdIG is attributed to the higher effective magnetic anisotropy and enhanced magnon scattering at the grain boundaries. Our study not only paves the way for the cost-effective growth of CMOS-compatible REIG-based systems with PMA for magnonic memory and information processing applications, but also highlights the fact that the spincaloritronic and spin-insulatronic properties of the polycrystalline REIGs follow those of their single-crystalline counterparts with reduced spin-to-charge conversion efficiency through LSSE which can be tuned further by controlling the average gran size and interface engineering.

Physics↗
DOE OSTI2025

Perspectives of active Si photonics devices for data communication and optical sensing

Si photonics has made rapid progress in research and commercialization in the past two decades. While it started with electronic–photonic integration on Si to overcome the interconnect bottleneck in data communications, Si photonics has now greatly expanded into optical sensing, light detection and ranging (LiDAR), optical computing, and microwave/RF photonics applications. From an applied physics point of view, this perspective discusses novel materials and integration schemes of active Si photonics devices for a broad range of applications in data communications, spectrally extended complementary metal–oxide–semiconductor (CMOS) image sensing, as well as 3D imaging for LiDAR systems. We also present a brief outlook of future synergy between Si photonic integrated circuits and Si CMOS image sensors toward ultrahigh capacity optical I/O, ultrafast imaging systems, and ultrahigh sensitivity lab-on-chip molecular biosensing.

electronic band structure↗