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At least 1,423 records · Page 79
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Weak Transitions in Light Nuclei

Nuclei are used for high-precision tests of the Standard Model and for studies of physics beyond the Standard Model. Without a thorough understanding of nuclei, we will not be able to meaningfully interpret the growing body of experimental data nor will we be able to disentangle new physics signals from underlying nuclear effects. This calls for accurate calculations of nuclear structure and reactions. In this work, we focus on electroweak decays in nuclei with mass number A ≤ 10 and report on ab initio Quantum Monte Carlo calculations of reduced matrix elements entering beta decays and electron captures in nuclei with mass number A ≤ 10. The many-body wave functions are calculated using selected Norfolk two- and three-nucleon potential models and associated one- and two-body axial currents at tree-level obtained from a chiral effective field theory with pions, nucleons, and Δ. The agreement with the experimental data is satisfactory except for transitions in A = 8 nuclei. In this specific case, the theory significantly underpredicts the experimental data, which indicates the need of further improvements in the corresponding nuclear wave functions. In this study, emphasis is placed on the contributions of two-body axial currents that are carefully analyzed using two-body transition densities. This allow us to study the spatial distribution and short-range behavior of two-body dynamics. In particular, the transition densities when scaled to peak at 1.0 exhibit universal short-range behavior across the considered nuclei, while they differ in the long-range tails.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Universal approximation of symmetric and anti-symmetric functions

In this work, we consider universal approximations of symmetric and anti-symmetric functions, which are important for applications in quantum physics, as well as other scientific and engineering computations. We give constructive approximations with explicit bounds on the number of parameters with respect to the dimension and the target accuracy ϵ. While the approximation still suffers from the curse of dimensionality, to the best of our knowledge, these are the first results in the literature with explicit error bounds for functions with symmetry or anti-symmetry constraints

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Fully quantum calculations of O 2 –N 2 scattering using a new potential energy surface: Collisional perturbations of the oxygen 118 GHz fine structure line

A proper description of the collisional perturbation of the shapes of molecular resonances is important for remote spectroscopic studies of the terrestrial atmosphere. Of particular relevance are the collisions between the $\text{O}_2$ and $\text{N}_2$ molecules—the two most abundant atmospheric species. In this work, we report a new highly accurate $\text{O}_2(\text{X}^3Σ^–_g)–\text{N}_2(\text{X}^1Σ^+_g)$ potential energy surface and use it for performing the first quantum scattering calculations addressing line shapes for this system. We use it to model the shape of the 118 GHz fine structure line in $\text{O}_2$ perturbed by collisions with $\text{N}_2$ molecules, a benchmark system for testing our methodology in the case of an active molecule in a spin triplet state. The calculated collisional broadening of the line agrees well with the available experimental data over a wide temperature range relevant for the terrestrial atmosphere. This work constitutes a step toward populating the spectroscopic databases with ab initio line shape parameters for atmospherically relevant systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Diagonal state designs with reconfigurable real-time circuits

Unitary designs are widely used in quantum computation, but in many practical settings it suffices to construct a diagonal state design generated with unitary gates diagonal in the computational basis. In this work, we introduce a simple and efficient diagonal state 3-design based on real-time evolutions under 2-local Hamiltonians. Our construction is inspired by the classical Girard-Hutchinson trace estimator in that it involves the stochastic preparation of many random-phase states. Though the exact Girard-Hutchinson states are not tractably implementable on a quantum computer, we can construct states that match the statistical moments of the Girard-Hutchinson states with real-time evolution. Importantly, our random states are all generated using the same Hamiltonians for real-time evolution, with the randomness arising solely from stochastic variations in the durations of the evolutions. In this sense, the circuit is fully reconfigurable and thus suited for near-term realizations on both digital and analog platforms. Moreover, we show how to extend our construction to achieve diagonal state designs of arbitrarily high order.

Shen, Yizhi [LBL, Berkeley] (ORCID:000000024160548↗
DOE OSTI2023

Probing fractional statistics in quantum simulators of spin liquid Hamiltonians

Recent advances in programmable quantum devices brought to the fore the intriguing possibility of using them to realise and investigate topological quantum spin liquid phases. This new and exciting direction brings about important research questions on how to probe and determine the presence of such exotic, highly entangled phases in a noisy quantum environment. One of the most promising tools is investigating the behaviour of the topological excitations, and in particular their fractional statistics. In this work we put forward a generic route to achieve this, and we illustrate it in the specific case of \mathbb{Z}_2 ℤ 2 topological spin liquids implemented with the aid of combinatorial gauge symmetry. We design a convenient architecture to study signatures of fractional statistics via quasiparticle interferometry, and we assess its robustness to diagonal and off-diagonal disorder, as well as to dephasing - effects that are generally pervasive in current quantum programmable devices. Interestingly, when turned on its head, our scheme provides a remarkably clear test of the “quantumness” of these devices, with robust signatures that crucially hinge on quantum coherence and quantum interference effects, and cannot be mimicked by classical stochastic processes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Geranium Photodiodes for Hard Xray Detection

This report summarizes the investigations engaged at UC Davis under subcontract B632083, as related to the LLNL-LDRD Project “High-Speed X-Ray Imager Arrays.” The first section entails work done within the Electrical and Computer Engineering (ECE) Department. The purpose of the work done so far is to understand photodiode design and which parameters are conducive to the design goals, which are: I: Maximize the detector quantum efficiency. The device must have a quantum efficiency of roughly 5% at 80 keV. II: Minimize temporal response. Collection time is limited to 1ns. All charge must be collected in that time. III: Minimize dark current. In this document, various photodiode parameters and designs are explored, and their impact on these goals are tabulated. In addition to these, various instruments that have been constructed for either testing these parameters or helping teammates with their experiments. The second section entails work done with the Materials Science Engineering (MSE) Department. In accordance with the proposed development of the germanium ROIC backside imagers, a critical step in the micromachining of these devices was the removal of the substrate on which the PIN junctions were epitaxially grown. A common technique for the micromachining of silicon wafers is the use of chemical etching alongside an “etch-stop” layer. In this technique, a chemical etchant will remove material until it reaches the etch-stop layer, at which the etch rate will drop significantly. This high selectivity (ratio of etch rates) allows any unevenness in the initial etching to be effectively smoothed away in the event that part of the wafer surface reaches the etch-stop layer sooner than another. An initial literature review found a paper by Divan et al. in which the authors used ion implantation to dope germanium wafers and achieve selectivity on the order of 100, sufficient for a reliable etch-stop.

42 ENGINEERING↗
DOE OSTI2021

Anomalous nematic state to stripe phase transition driven by in-plane magnetic fields

Anomalous nematic states, recently discovered in ultraclean two-dimensional electron gas, emerge from quantum Hall stripe phases upon further cooling. These states are hallmarked by a local minimum (maximum) in the hard (easy) longitudinal resistance and by an incipient plateau in the Hall resistance in nearly half-filled Landau levels. In this work, we demonstrate that a modest in-plane magnetic field, applied either along $\langle$110$\rangle$ or $\langle1\bar{1}0\rangle$ crystal axis of GaAs, destroys anomalous nematic states and restores quantum Hall stripe phases aligned along their native $\langle$110$\rangle$ direction. These findings confirm that anomalous nematic states are distinct from other ground states and will assist future theories to identify their origin.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments

A sidewall treatment process is proposed to recover the external quantum efficiency (EQE) loss in AlGaInP micro-LEDs ( μ LEDs). The proposed sidewall treatment consists of thermal annealing, ammonium sulfide chemical treatment, and sidewall passivation using atomic-layer deposition (ALD). The devices with sidewall treatment show improved optical power of more than 500% and 190% at 5 and 100 A cm −2 , respectively, compared to devices with ALD sidewall passivation. The reduction in EQE was 20% when shrinking the device dimensions from 100 × 100 to 20 × 20 μ m 2 . Finally, this work reveals that AlGaInP μ LEDs can be energy efficient by employing proper sidewall treatments.

Wong, Matthew S.↗
DOE OSTI2025

Programmable Cryogenic Memory in a Ge/GeSi Heterostructure

Programmable memory components that operate optimally at cryogenic temperatures are essential for cryogenic computing architectures that seek to implement computing-in-memory. In this work, we demonstrate highly programmable memory in a Ge/GeSi heterostructure field-effect transistor (HFET). To operate, the HFET is gated to introduce positive carriers within the Ge quantum well, creating a high-conductance state. We show that this device can be set to a low-conductance state by sweeping a negative bias on the device drain, and reset it to its high-conductance state by sweeping a more positive bias on the device gate, thereby creating memory. We then determine that the device can be programmed within a 103 range of conductances using either the SET or the RESET operation. We propose that memory is achieved through charge trapping as carriers tunnel out of the quantum well, and that altering the density and spatial distribution of carriers modulates the device conductance. This mechanism exhibits endurance over 1000 cycles at temperatures ≤ 25 K, suggesting that the carrier traps are located at the oxide-semiconductor interface. As a first demonstration of programmable conductance in a Ge/GeSi HFET, this work highlights the potential of group-IV HFETs to perform as analog cryogenic memory components.

cryogenic memory↗
DOE OSTI2023

Biphoton spectral quantum interference for information processing and delay metrology

Broadband time-energy entangled photons feature strong temporal correlations with potential for precision delay metrology, but previous work has leveraged only time-of-flight information ultimately limited by the detection jitter and resolution of the time-tagging electronics. Firstly, our work pushes the entanglement-based nonlocal delay metrology from the conventional time-of-flight measurement to a new direction—two-photon interferometry with subpicosecond sensitivity independent of detection resolution. Next, we show the selective sensitivity of frequency-bin encoded Bell states to the sum and difference of biphoton-delays by using a novel reconfigurable setup capable of switching between the Bell states by successively employing single and dual spectral-line pumps.

Seshadri, Suparna↗
DOE OSTI2025

Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices

Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for pentoxides of Nb (Nb2O5) and Ta (Ta2O5) in order to further understand limiting losses in qubits. Nb and Ta pentoxides of three thicknesses are deposited via pulsed laser deposition onto identical coplanar waveguide resonators. The two-level system (TLS) loss in Nb2O5 is determined to be about 30% higher than that of Ta2O5. This work indicates that qubits with Nb wiring are affected by higher loss arising from the native pentoxide itself, likely in addition to the presence of suboxides, which are largely absent in Ta.

Goronzy, D. P. [Northwestern U.]↗
DOE OSTI2021

Structural and physical properties of 99 complex bulk chalcogenides crystals using first-principles calculations

Chalcogenide semiconductors and glasses have many applications in the civil and military fields, especially in relation to their electronic, optical and mechanical properties for energy conversion and in enviormental materials. However, they are much less systemically studied and their fundamental physical properties for a large class chalcogenide semiconductors are rather scattered and incomplete. Here, we present a detailed study using well defined first-principles calculations on the electronic structure, interatomic bonding, optical, and mechanical properties for 99 bulk chalcogenides including thirteen of these crytals which have never been calculated. Due to their unique composition and structures, these 99 bulk chalcogenides are divided into two main groups. The first group contains 54 quaternary crystals with the structure composition (A2BCQ4) (A = Ag, Cu; B = Zn, Cd, Hg, Mg, Sr, Ba; C = Si, Ge, Sn; Q = S, Se, Te), while the second group contains scattered ternary and quaternary chalcogenide crystals with a more diverse composition (AxByCzQn) (A = Ag, Cu, Ba, Cs, Li, Tl, K, Lu, Sr; B = Zn, Cd, Hg, Al, Ga, In, P, As, La, Lu, Pb, Cu, Ag; C = Si, Ge, Sn, As, Sb, Bi, Zr, Hf, Ga, In; Q = S, Se, Te; x=1, 2, 3; y=0, 1, 2, 5; z=0, 1, 2 and n=3, 4, 5, 6, 9). Moreover, the total bond order density (TBOD) is used as a single quantum mechanical metric to characterize the internal cohesion of these crystals enabling us to correlate them with the calculated properties, especially their mechanical properties. This work provides a very large database for bulk chalcogenides crucial for the future theoretical and experimental studies, opening opportunities for study the properties and potential application of a wide variety of chalcogenides.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Surface and bulk two-level-system losses in lithium niobate acoustic resonators

Lithium niobate (LN) is a promising material for building acoustic resonators used in quantum applications, but its performance is limited by poorly understood material defects called two-level systems (TLSs). Here, in this work, we fabricate high-performance acoustic resonators from LN with quality factors up to 6 ×10 7 and use them to separate bulk and surface contributions to TLS loss. By comparing these bulk acoustic wave (BAW) resonators with previous surface-acoustic-wave and phononic-crystal studies, we show that devices with high surface-participation ratios are limited by surface TLSs, while our BAW devices reveal an intrinsic bulk TLS limit. Through systematic surface treatments and microscopy, we demonstrate that BAW resonator performance remains unchanged despite surface modifications, confirming operation in a bulk-limited regime. Here, our work establishes quantitative bounds on both surface and bulk TLS losses in LN within the context of the material growth and fabrication approaches we have pursued, and it provides guidance for future device engineering and materials development.

acoustic wave phenomena↗
DOE OSTI2019

Interlayer correlated fractional quantum Hall state in the ν = 4 / 5 bilayer system

We perform exact diagonalization studies for fractional quantum Hall states at filling factor 4/5 in a bilayer system, on a torus with various aspect ratios and angles. In this work we find that in the absence of tunneling, two weakly coupled 2/5 layers undergo a phase transition into an interlayer-correlated regime, which is also Abelian with the fivefold degeneracy on the torus. In the limit of zero layer separation, this phase becomes a singlet in the pseudospin variable describing the layer degree of freedom. By studying the Chern-number matrix, we show that the K matrix describing the interlayer-correlated regime requires a matrix dimension larger than two and this regime is in particular not described by a Halperin state. A detailed analysis of possible 4 × 4 K matrices having the requisite symmetries and quantum numbers shows that there is only one equivalence class of such matrices. A model wave function representing this universality class is constructed. The role of separate particle number conservation in both layers is discussed, and it is argued that this additional symmetry allows for the further distinction of two different symmetry-protected Abelian phases in the interlayer correlated regime. Interlayer tunneling breaks this symmetry and can drive the system into a single-layer regime when strong enough. A qualitative phase diagram in the tunneling-layer separation parameter space is proposed based on our numerical results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Magnetic order and spin liquid behavior in [Mo 3 ] 11+ molecular magnets

Molecular magnets based on [Mo 3 ] 11+ units with one unpaired electron per trimer have attracted recent interest due to the identification of quantum spin liquid candidacy in some family members. Here, we present comprehensive measurements on polycrystalline samples of ZnScMo 3 O 8 , MgScMo 3 O 8 , and Na 3 Sc 2 Mo 5 O 16 with the same Mo 3 O 13 magnetic building blocks. In this work, the crystal structures are characterized with x-ray or neutron powder diffraction and the magnetic ground states are determined by performing ac and dc susceptibility, specific heat, neutron powder diffraction, and muon spin relaxation measurements. Our work indicates that ZnScMo 3 O 8 and MgScMo 3 O 8 have ferromagnetic Curie-Weiss temperatures of 18.5 and 11.9 K, ordered ground states with net moments (low-moment ferromagnetism or canted antiferromagnetism), and zero field ordering temperatures of $T_c$ = 6 K and $T_c$ < 2 K, respectively. On the other hand, Na 3 Sc 2 Mo 5 O 16 hosts a dynamical magnetic ground state with no evidence for magnetic ordering or spin freezing down to 20 mK despite an antiferromagnetic Curie-Weiss temperature of –36.2 K, and therefore is a candidate for quantum spin liquid behavior. By comparing the present results to past work on the same family of materials, we construct a phase diagram which illustrates that the magnetic ground states of these Mo-based molecular magnets are very sensitive to small changes in the nearest-neighbor Mo-Mo distance.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Third-order photon correlations extract single-nanocrystal multiexciton properties in solution

Colloidal semiconductor nanocrystals are considered promising materials for high-flux optical applications, including lasing, light-emitting diodes, biological imaging, and quantum optics. In high-flux applications, multiexcitons can significantly contribute to emission, influencing its brightness, spectral purity, and kinetics. As a result, understanding and controlling multiexciton emission in colloidal nanocrystal materials is of the utmost importance. In the past, single-nanocrystal photon correlation methods have been applied to understand biexciton and triexciton efficiencies, lifetimes, and spectra. While powerful, such methods suffer from user selection bias and require stable emission from single nanocrystals. To compensate for this shortcoming, second-order correlation methods were developed to extract sample-averaged biexciton properties from a solution of nanocrystals. Until now, however, the analogous third-order solution photon correlation methods remained unexplored. In this work, we present a pair of third-order photon correlation techniques to obtain the sample-averaged single-nanocrystal triexciton quantum yield and lifetime in a solution-phase experiment. These techniques derive from the relationship between the Poisson probability of nanocrystal photon absorption and the intrinsic probability of nanocrystal photon emission. We validate the theoretical background of these techniques by creating a numerical model to simulate the diffusion and emission of many nanocrystals in solution. Our simulations confirm that the average triexciton quantum yield and triexciton lifetime can be extracted from a solution of nanocrystals. These techniques will enable researchers to gain a better understanding of the fundamental multiexciton properties of colloidal nanocrystals.

Horowitz, Jonah R. [Massachusetts Institute of Tec↗
DOE OSTI2021

Large gradients via correlation in random parameterized quantum circuits

Scaling of variational quantum algorithms to large problem sizes requires efficient optimization of random parameterized quantum circuits. For such circuits with uncorrelated parameters, the presence of exponentially vanishing gradients in cost function landscapes is an obstacle to optimization by gradient descent methods. In this work, we prove that reducing the dimensionality of the parameter space by utilizing circuit modules containing spatially or temporally correlated gate layers can allow one to circumvent the vanishing gradient phenomenon. Here, examples are drawn from random separable circuits and asymptotically optimal variational versions of Grover's algorithm based on the quantum alternating operator ansatz. In the latter scenario, our bounds on cost function variation imply a transition between vanishing gradients and efficient trainability as the number of layers is increased toward $\mathcal{O}\left({2}^{n/2}\right)$, the optimal oracle complexity of quantum unstructured search.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Realization of fermionic Laughlin state on a quantum processor

Strongly correlated topological phases of matter are central to modern condensed matter physics and quantum information technology but often challenging to probe and control in material systems. The experimental difficulty of accessing these phases has motivated the use of engineered quantum platforms for simulation and manipulation of exotic topological states. Among these, the Laughlin state stands as a cornerstone for topological matter, embodying fractionalization, anyonic excitations, and incompressibility. Although its bosonic analogs have been realized on programmable quantum simulators, a genuine fermionic Laughlin state has yet to be demonstrated on a quantum processor. Here, we realize the ν = 1/3 fermionic Laughlin state on IonQ’s trapped-ion quantum computer using an efficient and scalable Hamiltonian variational ansatz with 369 two-qubit gates on a 16-qubit circuit. Employing symmetry-verification error mitigation, we extract key observables that characterize the Laughlin state, including correlation hole, bulk-edge correspondence, and topological entanglement entropy, with strong agreement to exact diagonalization benchmarks. This work demonstrates an end-to-end workflow to simulate material-intrinsic topological orders and provides a starting point to explore its dynamics and excitations on digital quantum processors.

Shen, Lingnan [Univ. of Washington, Seattle, WA (U↗