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Device welds fine gage wire 0.001-in. in diameter. It permits welding of thermocouple junctions of the same size with straight sections adjacent to the junctions. Electrode arrangement provides constant pressure on the joint during welding while fully supporting the wires to prevent buckling or movement.
Thin-film, metal alloy thermocouple junctions do not rectify, change circuit impedance only slightly, and require very little increase in space. Although they are less efficient cooling devices than semiconductor junctions, they may be applied to assist conventional cooling techniques for electronic devices.
Thermopiles measure ullage gas temperatures to within plus or minus 1.65 deg K between 20 and 300 deg K, and also serve as point liquid-level sensors. Thermopile technique measures smaller temperature differences by keeping the reference junctions inside the tank and near the temperature range of the measuring junction.
Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.
This report continues studies on cells made with low temperature (<400degC) single-cycle, lithium diffusion schedules. Measurements of concentration of lithium at the back surface showed that C(sub S) changes with time consisting of a build-up to a maximum value (above 10(exp 17) cm(exp -3)) with gradual decrease at longer diffusion times. Using the estimated C(sub S) values, theoretical lithium profiles were calculated. The calculated concentration near the PN junction was higher than those measured by the capacitance voltage (C-V) technique. The calculated concentration gradients were one-seventh of those measured by C-V methods. Both the concentration and its gradient were proportional to C(sub S). Estimates of C(sub S) obtained by extrapolating from C-V measured values of concentration and gradient near the PN junction, showed a decrease in C(sub S) for longer diffusion times. This fact supported the trend observed in Shipment C-13, where,, at longer times, the spread in values of V(sub oc), lithium concentration, and gradient became greater. The general conclusion was that the I-V characteristics were well controlled, with good cell output, but for longer diffusion times the lithium concentration gradient could have wider spread. The work described has led to greater insight into the lithium distribution dependence on the surface conditions. The surface conditions could be changed by varying the method used to apply lithium. Vacuum evaporation of lithium shows promise, and another exhaustive test of this method is in progress. Shipment C-13 is summarized, and the succeeding lots (C-14, C-15) are described. It is felt that improved monitoring of cell properties is at hand, and that the control of cell fabrication processes has advanced to where the effects of subtle differences in lithium distribution can now be seen. Evaluation is continuing on the best method to scale up the fabrication steps. A different sequence of fabrication is planned for Shipments C-14 and C-15.
Josephson maximum DC current plot for linear overlap junctions, discussing junction area geometry to current perimetric proportionality
Several groups of lithium-doped solar cells have been evaluated under 1-MeV electron irradiation. Many of these groups indicated superior electrical output after irradiation and recovery as compared to similarly irradiated n/p solar cells. The superior cells are those with lithium concentrations of 2 to 5 x 10 to the 14th power atoms per cu cm at the junction. An irradiation of lithium-doped cells with 28-MeV electrons indicated a tenfold advantage of lithium-doped cells over n/p cells. Studies of the changes in the lithium concentration during recovery have shown the amounts of lithium reacting is highly nonlinear in regard to the electron fluence and varies greatly with distance from the junction. The results indicate that precipitation of lithium on radiation defects may be the cause of recovery rather than ion pairing.
Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.
The quantum-interference technique developed by Meservey (1965) is used to measure directly the absolute value of the penetration depth in lead in tin superconducting thin films. The technique assumes that the change in phase of the superconducting wave function around any contour within the superconductor must be 2 pi n, where n is a nonnegative integer. Results show that the critical current of a superconducting interferometer with two parallel junctions is not strictly periodic in the applied magnetic flux with a period equal to the flux quantum because of the magnetic field dependence of the critical currents of the junctions.
System alerts personnel of hazards which may develop while they are performing tests on radioisotope thermoelectric generator (RTG). Remedial action is initiated to minimize damage. Five operating conditions are monitored: hot junction temperature, cold junction temperature, thermal shroud coolant flow, vacuum in test chamber, and alpha radiation.
A phototransistor is described in which there is included as a part of its integral structure an auxiliary diode in the form of an added base-collector junction. This junction is formed in the surface of the base element and thus out of the direct path between the emitter and collector regions of the phototransistor.
A silver-ion bactericidal monitor is considered for the Space Shuttle Potable Water System. Potentiometric measurement using an ion-selective electrode is concluded to be the most feasible of available techniques. Four commercially available electrodes and a specially designed, solid-state, silver-sulfide electrode were evaluated for their response characteristics and suitability for space use. The configuration of the solid-state electrode with its Nernstian response of 10 to 10,000 ppb silver shows promise for use in space. A pressurized double-junction reference electrode with a quartz-fiber junction and a replaceable bellows electrolyte reservoir was designed verification-tested, and paired with a solid-state silver-sulfide electrode in a test fixture.
Silicon solar cells with induced junctions were created by forming an inversion layer near the surface of the silicon by supplying a sheet of positive charge above the surface. This charged layer was supplied through three mechanisms: (1) supplying a positive potential to a transparent electrode separated from the silicon surface by a dielectric, (2) contaminating the oxide layer with positive ions, and (3) forming donor surface states that leave a positive charge on the surface. A movable semi-infinite shadow delineated the extent of sensitivity of the cell due to the inversion region. Measurements of the inversion layer cell response to light of different wavelengths indicated it to be more sensitive to the shorter wavelengths of the sun's spectrum than conventional cells. Theory of the conductance of the inversion layer vs. strength of the inversion layer was compared with experiment and found to match. Theoretical determinations of junction depth and inversion layer strength were made as a function of the surface potential for the transparent electrode cell.
The investigation of the propagation modes in a homostructure GaAs laser and particularly of the spatial displacement of the TE and TM mode is reported. For this investigation, a homostructure GaAs laser was operated in an external optical cavity and experiments were performed where the resonator alignment was varied to displace the image of the p-n junction, formed in the optical cavity, from the p-n junction of the laser diode. The peak power of the laser radiation (which is in the TEM (sub 00) mode), the delay, the optical waveform, and the polarization were measured at room temperature for different cavity alignments. For the evaluation of the propagation modes the experimental results are correlated with the computed field distributions of the modes in a three-layer dielectric waveguide.
Results of tests performed on a SNAP 19 thermoelectric generator, SN-20. The SN-20 generator was tested for approximately 37,000 hours using electrical heating to simulate the heat released by isotope decay. After 27,000 hours of operation the output power from the generator decreased to approximately 1/3 of the beginning of life value while the internal resistance increased by a factor of 5. Analysis of the test results, confirmed by preliminary metallographic examination, indicated that the output power degradation was the result of excessive sublimation of the thermoelectric material and loss of the hot junction bond due to the depletion of the internal cover gas. This also resulted in excessive junction temperatures. Comparison is made with the behavior observed from the two flight generators and a tentative conclusion is advanced as to the reason for their failure.
To determine corrosive degradation of valve while it is in service, detect changes in surface roughness or presence of corrosive layers at junction of poppet and seat by measuring temperature gradients created across junction by small heat source.
Work on aluminum-alloyed silicon grating cells is continued. Optimization of the geometry (grating line width and spacing) confirms the analysis of such cells. A 1 sq cm grating cell was fabricated and its i-V characteristic was measured under an AMO solar simulator. It is found that the efficiency of this cell would be about 7.9%, if it were covered by the usual antireflection coating. The surface of the cell is not covered by a diffused junction. The response is blue shifted; the current is somewhat higher than that produced by a commercial Si cell. However, the open circuit voltage is low, and attempts to optimize the open circuit voltage of the aluminum-alloy junctions are described. A preliminary X-ray topographic examination of GaAs specimens of the type commonly used to make solar cells is studied. The X-ray study shows that the wafers are filled with regions having strain gradients, possibly caused by precipitates. It is possible that a correlation exists between the presence of low mechanical perfection and minority carrier diffusion lengths of GaAs crystals.
Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.