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At least 1,423 records · Page 79
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Improving the sensitivity of a near-infrared nanocomposite photodetector by enhancing trap induced hole injection

We report the enhancement of the photoconductive gain of nanocomposite near-infrared photodetectors by a zinc oxide nanoparticles (ZnO NPs) rich surface at the nanocomposite/cathode interface. An argon plasma etching process was used to remove polymer at the surface of nanocomposite films, which resulted in a ZnO NPs rich surface. The other way is to spin-coat a thin layer of ZnO NPs onto the nanocomposite layer. The ZnO NPs rich surface, which acts as electron traps to induce secondary hole injection under reverse bias, increased hole injection, and thus the external quantum efficiency by 2–3 times. The darkcurrent declined one order of magnitude simultaneously as a result of etching the top nanocomposite layer. The specific detectivity at 800 nm was increased by 7.4 times to 1.11 × 10{sup 10} Jones due to the simultaneously suppressed noise and enhanced gain.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electric-field control of electromagnon propagation and spin-wave injection in a spiral multiferroic/ferromagnet composite

We consider theoretically a composite chain consisting of a multiferroic helimagnet coupled to a conventional ferromagnet and inspect the conversion of electromagnon excitation into spin waves and vice versa. We demonstrate an electric-field control of spin-wave injection realized by electrically exciting an electromagnon that propagates with an intrinsic frequency larger than the gap of the spin wave in the ferromagnet. The efficiency of the conversion of the electromagnon into spin waves depends strongly on the strength of the magnetoelectric coupling at the interface and the intrinsic frequency of the multiferroic helimagnets. The phenomena predicted here suggest that a multiferroic/ferromagnet composite offers new opportunities for spin-wave injection, conversion, and control using electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effects of disorder on spin injection and extraction for organic semiconductor spin-valves

A device model for tunnel injection and extraction of spin-polarized charge carriers between ferromagnetic contacts and organic semiconductors with disordered molecular states is presented. Transition rates for tunneling are calculated based on a transfer Hamiltonian. Transport in the bulk semiconductor is described by macroscopic device equations. Tunneling predominantly involves organic molecular levels near the metal Fermi energy, and therefore typically in the tail of the band that supports carrier transport in the semiconductor. Disorder-induced broadening of the relevant band plays a critical role for the injection and extraction of charge carriers and for the resulting magneto-resistance of an organic semiconductor spin valve.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Non-degenerate four-wave mixing in an optically injection-locked InAs/InP quantum dot Fabry–Perot laser

Non-degenerate four-wave mixing in an InAs/InP quantum dot Fabry–Perot laser is investigated with an optical injection-locking scheme. Wavelength conversion is obtained for frequency detunings ranging from +2.5 THz to −3.5 THz. The normalized conversion efficiency is maintained above −40 dB between −1.5 and +0.5 THz with an optical signal-to-noise ratio above 20 dB and a maximal third-order nonlinear susceptibility normalized to material gain of 2 × 10{sup −19} m{sup 3}/V{sup 2}. In addition, we show that injection-locking at different positions in the gain spectrum has an impact on the nonlinear conversion process and the symmetry between up- and down- converted signals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al 0.3 Ga 0.7 N interband tunnel junctions with a lowresistance of 5.6 × 10 -4 Ω cm 2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-type Al 0.3 Ga 0.7 N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm 2 at a current density of 120 A/cm 2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Injection moulding of optical functional micro structures using laser structured, PVD-coated mould inserts

Micro structured optical plastics components are intensively used i. e. in consumer electronics, for optical sensors in metrology, innovative LED-lighting or laser technology. Injection moulding has proven to be successful for the large-scale production of those parts. However, the production of those parts still causes difficulties due to challenges in the moulding and demoulding of plastics parts created with laser structured mould inserts. A complete moulding of the structures often leads to increased demoulding forces, which then cause a breaking of the structures and a clogging of the mould. An innovative approach is to combine PVD-coated (physical vapour deposition), laser structured inserts and a variothermal moulding process to create functional mic8iüro structures in a one-step process. Therefore, a PVD-coating is applied after the laser structuring process in order to improve the wear resistance and the anti-adhesive properties against the plastics melt. In a series of moulding trials with polycarbonate (PC) and polymethylmethacrylate (PMMA) using different coated moulds, the mould temperature during injection was varied in the range of the glass transition and the melt temperature of the polymers. Subsequently, the surface topography of the moulded parts is evaluated by digital 3D laser-scanning microscopy. The influence of the moulding parameters and the coating of the mould insert on the moulding accuracy and the demoulding behaviour are being analysed. It is shown that micro structures created by ultra-short pulse laser ablation can be successfully replicated in a variothermal moulding process. Due to the mould coating, significant improvements could be achieved in producing micro structured optical plastics components.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Charge injection and accumulation in organic light-emitting diode with PEDOT:PSS anode

Organic light-emitting diode (OLED) displays using flexible substrates have many attractive features. Since transparent conductive oxides do not fit the requirements of flexible devices, conductive polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative. The charge injection and accumulation in OLED devices with PEDOT:PSS anodes are investigated and compared with indium tin oxide anode devices. Higher current density and electroluminescence light intensity are achieved for the OLED device with a PEDOT:PSS anode. The electric field induced second-harmonic generation technique is used for direct observation of temporal evolution of electric fields. It is clearly demonstrated that the improvement in the device performance of the OLED device with a PEDOT:PSS anode is associated with the smooth charge injection and accumulation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Improvement of carrier injection symmetry and quantum efficiency in InGaN light-emitting diodes with Mg delta-doped barriers

The effect of δ-doping of In{sub 0.06}Ga{sub 0.94}N barriers with Mg on the quantum efficiency of blue light-emitting-diodes (LEDs) with active regions composed of 6 (hex) 3-nm In{sub 0.15}Ga{sub 0.85}N is investigated. Compared to the reference sample, δ-doping of the first barrier on the n-side of the LED structure improves the peak external quantum efficiency (EQE) by 20%, owing to the increased hole concentration in the wells adjacent to the n-side, as confirmed by numerical simulations of carrier distributions across the active region. Doping the second barrier, in addition to the first one, did not further enhance the EQE, which likely indicates compensation of improved hole injection by degradation of the active region quality due to Mg doping. Both LEDs with Mg δ-doped barriers effectively suppress the drop of efficiency at high injection when compared to the reference sample, and the onset of EQE peak roll-off shifts from ∼80 A/cm{sup 2} in the reference LED to ∼120 A/cm{sup 2} in the LEDs with Mg δ-doped barriers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Spin-current injection and detection in κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br

Spin-current injection into an organic semiconductor κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by ferromagnetic or spin-wave resonance, a voltage signal was found to appear in the κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br film. Magnetic-field-angle dependence measurements indicate that the voltage signal is governed by the inverse spin Hall effect in κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br. We found that the voltage signal in the κ-(BEDT-TTF){sub 2}Cu[N(CN){sub 2}]Br/YIG system is critically suppressed around 80 K, around which magnetic and/or glass transitions occur, implying that the efficiency of the spin-current injection is suppressed by fluctuations which critically enhanced near the transitions.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms

We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system does not depend on complex nonlinear frequency-doubling and can be made compact, which will be useful for providing light sources for laser cooling experiments including transportable optical lattice clocks.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Electrical injection to contactless near-surface InGaN quantum well

Charge injection to the prevailing and emerging light-emitting devices is almost exclusively based on the double heterojunction (DHJ) structures that have remained essentially unchanged for decades. In this letter, we report the excitation of a near surface indium gallium nitride (InGaN) quantum well (QW) by bipolar carrier diffusion from a nearby electrically excited pn-homojunction. The demonstrated near surface QW emitter is covered only by a 10 nm GaN capping leaving the light-emitting mesa perfectly free of metals, other contact, or current spreading structures. The presented proof-of-principle structure, operating approximately with a quantum efficiency of one fifth of a conventional single QW reference structure, provides conclusive evidence of the feasibility of using diffusion injection to excite near surface light-emitting structures needed, e.g., for developing light emitters or photo-voltaic devices based on nanoplasmonics or free-standing nanowires. In contrast to the existing DHJ solutions or optical pumping, our approach allows exciting nanostructures without the need of forming a DHJ, absorbing layers or even electrical contacts on the device surface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Improving hole injection and carrier distribution in InGaN light-emitting diodes by removing the electron blocking layer and including a unique last quantum barrier

The effects of removing the AlGaN electron blocking layer (EBL), and using a last quantum barrier (LQB) with a unique design in conventional blue InGaN light-emitting diodes (LEDs), were investigated through simulations. Compared with the conventional LED design that contained a GaN LQB and an AlGaN EBL, the LED that contained an AlGaN LQB with a graded-composition and no EBL exhibited enhanced optical performance and less efficiency droop. This effect was caused by an enhanced electron confinement and hole injection efficiency. Furthermore, when the AlGaN LQB was replaced with a triangular graded-composition, the performance improved further and the efficiency droop was lowered. The simulation results indicated that the enhanced hole injection efficiency and uniform distribution of carriers observed in the quantum wells were caused by the smoothing and thinning of the potential barrier for the holes. This allowed a greater number of holes to tunnel into the quantum wells from the p-type regions in the proposed LED structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Spectral modification of the laser emission of a terahertz quantum cascade laser induced by broad-band double pulse injection seeding

We demonstrate by injection seeding that the spectral emission of a terahertz (THz) quantum cascade laser (QCL) can be modified with broad-band THz pulses whose bandwidths are greater than the QCL bandwidth. Two broad-band THz pulses delayed in time imprint a modulation on the single THz pulse spectrum. The resulting spectrum is used to injection seed the THz QCL. By varying the time delay between the THz pulses, the amplitude distribution of the QCL longitudinal modes is modified. By applying this approach, the QCL emission is reversibly switched from multi-mode to single mode emission.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Modulation of hole-injection in GaInN-light emitting triodes and its effect on carrier recombination behavior

The effects of the hole injection modulated by using a three-terminal GaInN-based light emitter, light-emitting triode (LET), on carrier recombination behavior and efficiency droop are investigated. It was found that the lateral electric field created by applying voltage bias between the two anodes effectively reduces efficiency droop as well as dynamic conductance of LETs. Detailed analyses of LETs under various operation conditions by APSYS simulations reveal that the asymmetry in carrier transport between electrons and holes is alleviated by promoted injection of hot holes over the potential barrier, increasing the hole concentration as well as the radiative recombination rate in the multiple quantum well active region.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Carrier injection engineering in nanowire transistors via dopant and shape monitoring of the access regions

This work theoretically studies the influence of both the geometry and the discrete nature of dopants of the access regions in ultra-scaled nanowire transistors. By means of self-consistent quantum transport simulations, we show that discrete dopants induce quasi-localized states which govern carrier injection into the channel. Carrier injection can be enhanced by taking advantage of the dielectric confinement occurring in these access regions. We demonstrate that the optimization of access resistance can be obtained by a careful control of shape and dopant position. These results pave the way for contact resistance engineering in forthcoming device generations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

The role which the V-shaped pits (V-pits) play in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) has been proposed to enable the formation of sidewall MQWs, whose higher bandgap than that of the c-plane MQWs is considered to act as an energy barrier to prevent carriers from reaching the dislocations. Here, with increasing proportion of current flowing via the V-pits, the emission of the c-plane MQWs broadens across the short-wavelength band and shows a blueshift successively. This phenomenon is attributed to hole injection from the sidewall of V-pits into the c-plane MQWs, which is a new discovery in the injection mechanism of InGaN/GaN MQW LEDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Modification to the accelerator of the NBI-1B ion source for improving the injection efficiency

Minimizing power loss of a neutral beam imposes modification of the accelerator of the ion source for further improvement of the beam optics. The beam optics can be improved by focusing beamlets. The injection efficiencies by the steering of ion beamlets are investigated numerically to find the optimum modification of the accelerator design of the NBI-1B ion source. The beam power loss was reduced by aperture displacement of three edge beamlets arrays considering power loadings on the beamline components. Successful testing and operation of the ion source at 60 keV/84% of injection efficiency led to the possibility of enhancing the system capability to a 2.4 MW power level at 100 keV/1.9 μP.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Injection locking of an electronic maser in the hard excitation mode

The phenomenon of hard excitation is natural for many electronic oscillators. In particular, in a gyrotron, a maximal efficiency is often attained in the hard excitation regime. In this paper, we study the injection-locking phenomena using two models of an electronic maser in the hard excitation mode. First, bifurcation analysis is performed for the quasilinear model described by ordinary differential equations for the slow amplitude and phase. Two main scenarios of transition to the injection-locked mode are described, which are generalizations of the well-known phase-locking and suppression mechanisms. The results obtained for the quasilinear model are confirmed by numerical simulations of a gyrotron with fixed Gaussian structure of the RF field.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗