Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “impurity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,423 records · Page 79
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Understanding carbon sourcing and transport originating from the helicon antenna surfaces during high-power helicon discharge in DIII-D Tokamak

The high-power helicon wave system in the DIII-D tokamak could potentially introduce new plasma–material interaction (PMI) challenges owing to rectified RF sheath potentials that develop near the antenna and surrounding plasma-facing components. We present the first application of the STRIPE (Simulated Transport of RF Impurity Production and Emission) framework to helicon-induced PMIs, extending previous STRIPE studies of ICRH antennas by incorporating net erosion, local re-deposition, and three-dimensional global impurity transport. The integrated workflow couples SOLPS, COMSOL, RustBCA, GITR, and GITRm to simulate carbon erosion, re-deposition, and impurity transport for two experimentally constrained DIII-D H-mode helicon operating scenarios with different antenna–plasma gaps, coupled RF powers, and edge plasma conditions. COMSOL predicts rectified RF sheath potentials of 1–5 kV localized near the lower portion of the antenna, where the magnetic field intersects the surface at grazing incidence. Carbon self-sputtering dominates the erosion source, whereas RF-accelerated D + ions contribute approximately 1% of the total gross erosion. The smaller-gap operating scenario exhibits substantially stronger gross erosion, enhanced local re-deposition (∼12%), and a larger confined carbon inventory owing to increased plasma accessibility and broader RF sheath coverage. Comparison with available DIII-D measurements shows no distinct change in the global carbon signal that correlates with the helicon RF pulse, consistent with the simulations indicating that the helicon-generated carbon source remains small compared with the existing background carbon inventory under the present graphite-wall operating conditions. These results demonstrate the capability of STRIPE to integrate RF sheath modeling, plasma transport, surface interaction physics, and three-dimensional impurity transport for the interpretation of helicon-induced PMIs. The study further identifies the principal sources of modeling uncertainty, including grazing-angle RF sheath physics, slow-wave resolution, plasma-background extrapolation, and trace-impurity transport assumptions, providing a framework for future validation and model development.

Kumar, Atul [Oak Ridge National Laboratory (ORNL),↗
DOE OSTI2019

Dynamical mean field theory simulations with the adaptive sampling configuration interaction method

In the pursuit of accurate descriptions of strongly correlated quantum many-body systems, dynamical mean field theory (DMFT) has been an invaluable tool for elucidating the spectral properties and quantum phases of both phenomenological models and ab initio descriptions of real materials. Key to the DMFT process is the self-consistent map of the original system into an Anderson impurity model, the ground state of which is computed using an impurity solver. The power of the method is thus limited by the complexity of the impurity model the solver can handle. Simulating realistic systems generally requires many correlated sites. By adapting the recently proposed adaptive sampling configuration interaction (ASCI) method as an impurity solver, we enable much more efficient zero-temperature DMFT simulations. The key feature of the ASCI method is that it selects only the most relevant Hilbert space degrees of freedom to describe the ground state. This reduces the numerical complexity of the calculation, which will allow us to pursue future DMFT simulations with more correlated impurity sites than in previous works. Here, we present the ASCI-DMFT method and example calculations on the one- and two-dimensional Hubbard models that exemplify its efficient convergence and timing properties. We show that the ASCI approach is several orders of magnitude faster than the current best published ground-state DMFT simulations, which allows us to study the bath discretization error in simulations with small clusters, as well as to address cluster sizes beyond the current state of the art. Finally, our approach can also be adapted for other embedding methods such as density matrix embedding theory and self-energy embedding theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Competition between Kondo effect and RKKY physics in graphene magnetism

The cooperative behavior of quantum impurities on two-dimensional (2D) materials, such as graphene and bilayer graphene, is characterized by a nontrivial competition between screening (Kondo effect) and Ruderman-Kittel-Kasuya-Yosida (RKKY) magnetism. In addition, due to the small density of states at the Fermi level, impurities may not couple to the conduction electrons at all, behaving as free moments. Employing a recently developed exact numerical method to study multi-impurity lattice systems, we obtain nonperturbative results that dramatically depart from expectations based on the conventional RKKY theory. At half filling and for weak coupling, impurities remain in the local moment regime when they are on opposite sublattices, up to a critical value of the interactions when they start coupling antiferromagnetically with correlations that decay very slowly with interimpurity distance. At finite doping, away from half filling, ferromagnetism is completely absent and the physics is dominated by a competition between antiferromagnetism and Kondo effect. In bilayer graphene, impurities on opposite layers behave as free moments, unless the interaction is of the order of the hopping or larger.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Unveiling the internal entanglement structure of the Kondo singlet

We disentangle all the individual degrees of freedom in the quantum impurity problem to deconstruct the Kondo singlet, both in real and energy space, by studying the contribution of each individual free electron eigenstate. This is a problem of two spins coupled to a bath, where the bath is formed by the remaining conduction electrons. Being a mixed state, we resort to the “concurrence” to quantify entanglement. We identify “projected natural orbitals” that allow us to individualize a single-particle electronic wave function that is responsible of more than 90% of the impurity screening. In the weak coupling regime, the impurity is entangled to an electron at the Fermi level, while in the strong coupling regime, the impurity counterintuitively entangles mostly with the high energy electrons and disentangles completely from the low-energy states carving a “hole” around the Fermi level. This enables one to use concurrence as a pseudo order parameter to compute the characteristic “size” of the Kondo cloud, beyond which electrons are weakly correlated to the impurity and are dominated by the physics of the boundary.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Multichannel Topological Kondo Effect

A Coulomb blockaded M-Majorana island coupled to normal metal leads realizes a novel type of Kondo effect where the effective impurity “spin” transforms under the orthogonal group SO⁡(M). The impurity spin stems from the nonlocal topological ground state degeneracy of the island and thus the effect is known as the topological Kondo effect. We introduce a physically motivated N-channel generalization of the topological Kondo model. Starting from the simplest case N =2, we conjecture a stable intermediate coupling fixed point and evaluate the resulting low-temperature impurity entropy. The impurity entropy indicates that an emergent Fibonacci anyon can be realized in the N =2 model. We also map the case N =2, M =4 to the conventional four-channel Kondo model and find the conductance at the intermediate fixed point. By using the perturbative renormalization group, we also analyze the large-N limit, where the fixed point moves to weak coupling. In the isotropic limit, we find an intermediate stable fixed point, which is stable to “exchange” coupling anisotropies, but unstable to channel anisotropy. We evaluate the fixed point impurity entropy and conductance to obtain experimentally observable signatures of our results. Here, in the large-N limit, we evaluate the full crossover function describing the temperature-dependent conductance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors

A quasi-classical method for calculating the narrowing of the Hubbard gap between the A{sup 0} and A{sup +} acceptor bands in a hole semiconductor or the D{sup 0} and D{sup –} donor bands in an electron semiconductor is suggested. This narrowing gives rise to the phenomenon of a semiconductor transition from the insulator to metal state with an increase in doping level. The major (doping) impurity can be in one of three charge states (–1, 0, or +1), while the compensating impurity can be in states (+1) or (–1). The impurity distribution over the crystal is assumed to be random and the width of Hubbard bands (levels), to be much smaller than the gap between them. It is shown that narrowing of the Hubbard gap is due to the formation of electrically neutral acceptor (donor) states of the quasicontinuous band of allowed energies for holes (electrons) from excited states. This quasicontinuous band merges with the top of the valence band (v band) for acceptors or with the bottom of the conduction band (c band) for donors. In other words, the top of the v band for a p-type semiconductor or the bottom of the c band for an n-type semiconductor is shifted into the band gap. The value of this shift is determined by the maximum radius of the Bohr orbit of the excited state of an electrically neutral major impurity atom, which is no larger than half the average distance between nearest impurity atoms. As a result of the increasing dopant concentration, the both Hubbard energy levels become shallower and the gap between them narrows. Analytical formulas are derived to describe the thermally activated hopping transition of holes (electrons) between Hubbard bands. The calculated gap narrowing with increasing doping level, which manifests itself in a reduction in the activation energy ε{sub 2} is consistent with available experimental data for lightly compensated p-Si crystals doped with boron and n-Ge crystals doped with antimony.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Spin-dependent tunneling recombination in heterostructures with a magnetic layer

We propose a mechanism for the generation of spin polarization in semiconductor heterostructures with a quantum well and a magnetic impurity layer spatially separated from it. The spin polarization of carriers in a quantum well originates from spin-dependent tunneling recombination at impurity states in the magnetic layer, which is accompanied by a fast linear increase in the degree of circular polarization of photoluminescence from the quantum well. Two situations are theoretically considered. In the first case, resonant tunneling to the spin-split sublevels of the impurity center occurs and spin polarization is caused by different populations of resonance levels in the quantum well for opposite spin projections. In the second, nonresonant case, the spin-split impurity level lies above the occupied states of electrons in the quantum well and plays the role of an intermediate state in the two-stage coherent spin-dependent recombination of an electron from the quantum well and a hole in the impurity layer. The developed theory allows us to explain both qualitatively and quantitatively the kinetics of photoexcited electrons in experiments with photoluminescence with time resolution in Mn-doped InGaAs heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Quantitative defect analysis in MOCVD GaN-on-GaN using cathodoluminescence

Cathodoluminescence (CL) is used as a quantitative characterization technique to probe impurities at the metal-organic chemical vapor deposition (MOCVD) grown GaN-on-GaN homoepitaxial interfaces. CL intensity contrast shows a strong correlation with the interfacial impurity concentrations. Based on the analysis of recombination mechanisms of electron beam induced non-equilibrium carriers, an analytical model is proposed to quantitatively determine the impurity concentrations from CL intensity. The extracted interfacial impurity concentrations from the analytical model show a good agreement with the compensation levels obtained from capacitance-voltage measurement, signifying the potential of CL for probing the quantitative impurity levels in GaN-on-GaN structures. This approach can also be extended to be applied in other material systems.

Chen, Zhaoying↗
DOE OSTI2022

Analysis of Low RRR SRF Cavities

Recent findings in the superconducting radio-frequency (SRF) community have shown that introducing certain impurities into high-purity niobium can improve quality factors and accelerating gradients. Success has been found in nitrogen-doping, diffusion of the native oxide into the niobium surface, and thin films of alternate superconductors atop a niobium bulk cavity. We question why some impurities improve RF performance while others hinder it. The purpose of this study is to characterize the impurity profile of niobium with a low residual resistance ratio (RRR) and correlate these impurities with the RF performance of low RRR cavities so that the mechanism of recent impurity-based improvements can be better understood and improved upon. Additionally, we perform a low temperature bake on the low RRR cavity to evaluate how the intentional addition of oxygen to the RF layer affects performance. We have found that low RRR cavities experience low temperature-dependent BCS resistance behavior more prominently than their high RRR counterparts. The results of this study have the potential to unlock a new understanding on SRF materials.

43 PARTICLE ACCELERATORS↗
DOE OSTI2014

Coal-Derived Warm Syngas Purification and CO 2 Capture-Assisted Methane Production

Gasifier-derived syngas from coal has many applications in the area of catalytic transformation to fuels and chemicals. Raw syngas must be treated to remove a number of impurities that would otherwise poison the synthesis catalysts. Inorganic impurities include alkali salts, chloride, sulfur compounds, heavy metals, ammonia, and various P, As, Sb, and Se- containing compounds. Systems comprising multiple sorbent and catalytic beds have been developed for the removal of impurities from gasified coal using a warm cleanup approach. This approach has the potential to be more economic than the currently available acid gas removal (AGR) approaches and improves upon currently available processes that do not provide the level of impurity removal that is required for catalytic synthesis application. Gasification also lends itself much more readily to the capture of CO 2 , important in the regulation and control of greenhouse gas emissions. CO 2 capture material was developed and in this study was demonstrated to assist in methane production from the purified syngas. Simultaneous CO 2 sorption enhances the CO methanation reaction through relaxation of thermodynamic constraint, thus providing economic benefit rather than simply consisting of an add-on cost for carbon capture and release. Molten and pre-molten LiNaKCO 3 can promote MgO and MgO-based double salts to capture CO 2 with high cycling capacity. A stable cycling CO 2 capacity up to 13 mmol/g was demonstrated. This capture material was specifically developed in this study to operate in the same temperature range and therefore integrate effectively with warm gas cleanup and methane synthesis. By combining syngas methanation, water-gas-shift, and CO 2 sorption in a single reactor, single pass yield to methane of 99% was demonstrated at 10 bar and 330°C when using a 20 wt% Ni/MgAl 2 O 4 catalyst and a molten-phase promoted MgO-based sorbent. Under model feed conditions both the sorbent and catalyst exhibited favorable stability after multiple test cycles. The cleanup for warm gas cleanup of inorganics was broken down into three major steps: chloride removal, sulfur removal, and the removal for a multitude of trace metal contaminants. Na 2 CO 3 was found to optimally remove chlorides at an operating temperature of 450ºC. For sulfur removal two regenerable ZnO beds are used for bulk H 2 S removal at 450ºC (<5 ppm S) and a non-regenerable ZnO bed for H 2 S polishing at 300ºC (<40 ppb S). It was also found that sulfur from COS could be adsorbed (to levels below our detection limit of 40 ppb) in the presence of water that leads to no detectable slip of H 2 S. Finally, a sorbent material comprising of Cu and Ni was found to be effective in removing trace metal impurities such as AsH 3 and PH 3 when operating at 300ºC. Proof-of-concept of the integrated cleanup process was demonstrated with gasifier-generated syngas produced at the Western Research Institute using Wyoming Decker Coal. When operating with a ~1 SLPM feed, multiple inorganic contaminant removal sorbents and a tar-reforming bed was able to remove the vast majority of contaminants from the raw syngas. A tar-reforming catalyst was employed due to the production of tars generated from the gasifier used in this particular study. It is envisioned that in a real application a commercial scale gasifier operating at a higher temperature would produce lesser amount of tar. Continuous operation of a poison-sensitive copper-based WGS catalyst located downstream from the cleanup steps resulted in successful demonstration.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2015

Hydrogen-bond Specific Materials Modification in Group IV Semiconductors

Semiconductor dielectric crystals consist of two fundamental components: lattice atoms and electrons. The former component provides a crystalline structure that can be disrupted by various defects or the presence of an interface, or by transient oscillations known as phonons. The latter component produces an energetic structure that is responsible for the optical and electronic properties of the material, and can be perturbed by lattice defects or by photo-excitation. Over the period of this project, August 15, 1999 to March 31, 2015, a persistent theme has been the elucidation of the fundamental role of defects arising from the presence of radiation damage, impurities (in particular, hydrogen), localized strain or some combination of all three. As our research effort developed and evolved, we have experienced a few title changes, which reflected this evolution. Throughout the project, ultrafast lasers usually in a pump-probe configuration provided the ideal means to perturb and study semiconductor crystals by both forms of excitation, vibrational (phonon) and electronic (photon). Moreover, we have found in the course of this research that there are many interesting and relevant scientific questions that may be explored when phonon and photon excitations are controlled separately. Our early goals were to explore the dynamics of bond-selective vibrational excitation of hydrogen from point defects and impurities in crystalline and amorphous solids, initiating an investigation into the behavior of hydrogen isotopes utilizing a variety of ultrafast characterization techniques, principally transient bleaching spectroscopy to experimentally obtain vibrational lifetimes. The initiative could be divided into three related areas: (a) investigation of the change in electronic structure of solids due to the presence of hydrogen defect centers, (b) dynamical studies of hydrogen in materials and (c) characterization and stability of metastable hydrogen impurity states under transient compression. This research focused on the characterization of photon and ion stimulated hydrogen related defect and impurity reactions and migration in solid state matter, which requires a detailed understanding of the rates and pathways of vibrational energy flow, of the transfer channels and of the coupling mechanisms between local vibrational modes (LVMs) and phonon bath as well as the electronic system of the host material. It should be stressed that researchers at Vanderbilt and William and Mary represented a unique group with a research focus and capabilities for low temperature creation and investigation of such material systems. Later in the program, we carried out a vigorous research effort addressing the roles of defects, interfaces, and dopants on the optical and electronic characteristics of semiconductor crystals, using phonon generation by means of ultrafast coherent acoustic phonon (CAP) spectroscopy, nonlinear characterization using second harmonic generation (SHG), and ultrafast pump-and-probe reflectivity and absorption measurements. This program featured research efforts from hydrogen defects in silicon alone to other forms of defects such as interfaces and dopant layers, as well as other important semiconducting systems. Even so, the emphasis remains on phenomena and processes far from equilibrium, such as hot electron effects and travelling localized phonon waves. This program relates directly to the mission of the Department of Energy. Knowledge of the rates and pathways of vibrational energy flow in condensed matter is critical for understanding dynamical processes in solids including electronically, optically and thermally stimulated defect and impurity reactions and migration. The ability to directly probe these pathways and rates allows tests of theory and scaling laws at new levels of precision. Hydrogen embedded in model crystalline semiconductors and metal oxides is of particular interest, since the associated local mode can be excited cleanly, and is usually well-separated in energy from the phonon bath. These basic dynamical studies have provided new insights for example into the fundamental mechanisms that control proton diffusion in these oxides. This area of materials science has largely fulfilled its promise to identify degradation mechanisms in electronic and optoelectronic devices, and to advance solid oxide proton conductors for fuel cells, gas sensors and proton-exchange membrane applications. It also provides the basis for innovations in materials synthesis involving atomic-selective diffusion and desorption.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Solvent Hold Tank Sample Results for MCU-18-301- 303 (July 2018), MCU-18-357-359-360 (August 2018), and MCU-18-402-410 (September 2018) (Quarterly Report)

A trend summary of three Solvent Hold Tank (SHT) monthly samples; MCU-18-301-302-303, MCU-18- 357-359-360 and MCU-18-402-410 are reported. Most of the conclusions are based on the September SHT sample (MCU-18-402-410). Analyses of the September SHT sample (MCU-18-402-410) indicated that the Modifier (Cs-7SB) and the extractant (MaxCalix) concentrations were below their nominal recommended concentrations (169,000 mg/L and 46,400 mg/L respectively) by 5% and 8% respectively. The suppressor (N,N’,N”–tris(3,7-dimethyloctyl)guanidine or TiDG) concentration has decreased since the April 2018 measurement (Modular Caustic-Side Solvent Extraction Unit or MCU resumed processing radioactive salt solution from May through August 2018) to 241 mg/L, well below the minimum recommended concentration (479 mg/L). The apparent “downwards” trends observed in the TiDG, MaxCalix, and Modifier measurements are consistent with the startup (or Proficiency Runs) of MCU on May 22, 2018; new levels are consistent with the concentrations observed when MCU was fully operational in 2016. This analysis confirms the Isopar™ L addition to the solvent on July 2 and August 9, 2018. This analysis also indicates the solvent did require a trim addition. Based on the current monthly sample, the concentrations of Isopar™ L, MaxCalix, and Modifier are sufficient for continuing operation but are expected to decrease with time. The TiDG concentration was below its recommended level. Periodic characterization and trimming additions to the solvent are recommended. The Semi-Volatile Organic Analysis (SVOA) did not detect any impurities. However, the Fourier Transform Hydrogen Nuclear Magnetic Resonance (FT-HNMR) analysis detected a low concentration of sec-butyl phenol (SBP) at levels of a few ppm. The impurity concentration was highest in the July sample and consistently detected in the August and September samples (but always a few ppm or less). The source of this impurity is due to the degradation of the Modifier. Another impurity observed in the samples was mercury. Based on the September SHT sample, up to 17 ± 3 micrograms of mercury per mL of solvent was detected (the average of the Direct Mercury Analysis (DMA) and X-Ray Fluorescence (XRF) methods). The higher mercury concentration in the solvent (as determined in the last three monthly samples) is possibly due to the higher mercury concentration in Salt Batches 9 and 10 (SB 10 was recently added to Tank 49H in March 2017). The gamma concentration (~2.3E5 dpm/mL) measured in the September SHT samples was consistent with previous values observed when MCU was fully operational (for example, between December 2016 and January 2017) and it was lower than the April SHT measurement. The “dip” in the gamma measurement for the May 2018 SHT sample was due to Isopar™ L addition to MCU during April and May 2018. The laboratory will continue to monitor the quality of the solvent for any new impurities or degradation of the solvent components.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2020

Quantum Quench Dynamics–Crossover Phenomena in Nonequilibrium Correlated Quantum Systems (Final Technical Report)

In this project we have developed analytical and numerical tools to study the interplay between interactions, dimensionality, fluctuations and disorder in quantum impurity systems. We have studied the transient dynamics following a quench, i.e. the sudden change in a control variable of the model Hamiltonian, which offers a unique way to examine the system’s spatial, temporal and energetic structure. Specifically, we have investigated how crossover scales, i.e. given by Kondo couplings, are affected by disorder. We have addressed a wide range of phenomena, such as the effects of static disorder on dynamical screening of magnetic impurities, and the influence of a fully time-fluctuating bath environment on the dephasing of system qubits. We have found that many of these systems exhibit fascinating counterintuitive behavior, such as e.g. the possibility of asymptotic unitary time evolution in specifically conditioned system-bath Hamiltonians. From a technical point of view, we have developed a supersymmetric formalism to analyze scaling functions of disordered quantum impurity spin chains, we generalized the strong-coupling real-space renormalization group method to probe the quench dynamics of higher-dimensional quantum impurity systems, and we devised a master equation approach that included the effects of a fully fluctuating environment. This way, we have addressed a very broad spectrum of transient phenomena in quantum impurity systems, with disorder ranging from the quenched to the annealed limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Electrochemical Control for Corrosion in Molten Chlorides During CSP Plant Operation

The Liquid Pathway of the Concentrating Solar Power Generation 3 (CSP Gen3) program proposed low-cost molten chloride salt for energy storage. However, online corrosion control was identified as a remining major risk of the Liquid Pathway approach. This project addressed that risk. Electrochemical solutions for corrosion mitigation during CSP plant operation were investigated and their feasibility and scalability were evaluated. The leading cause of corrosion in molten chloride salt systems was identified as corrosive impurities that form within the salt upon exposure to trace amounts of air and moisture. Leveraging electrochemistry, reduction/oxidation reactions can be employed to remove these corrosive impurities. In Phase 1 of this project, a bench-scale batch electrochemical reactor was designed, fabricated, and used to assess the kinetics and thermodynamics of electrochemical salt purification. In Phase 2, a laboratory-scale flow reactor was designed, fabricated, and used to assess the efficacy of the electrochemical method under flowing conditions. Results show that under proposed operating conditions for the Liquid Pathway Gen3 Pilot Plant, the electrochemical method is significantly more effective at removing impurities than alternative chemical and thermal methods, and that the electrochemical method produces less harmful byproducts. A key advance made in the course of this project was the development of a 2-electrode method for electrochemical purification that is more scalable than previously developed 3 electrode methods. This novel method is based on Magnesium (Mg) electrowinning. A provisional patent based on this invention has been submitted (USPTO Application No. 63/480,355). Additional key advances made during this project include assessment of the effect of dissimilar alloys on corrosion, kinetic and thermodynamic evaluation of thermolysis reactions of impurities within the molten salt, characterization of byproducts of purification reactions, and generation of IP focused on isolating value-added products using molten salt-based electrochemistry that could be deployed to valorize the process (USPTO Application No. 63/478,806). Ultimately, this project represented a step toward feasibility of Liquid Pathway Gen3 CSP. The method developed under this project could significantly reduce capital expenses and operating costs and increase plant profitability by enabling use of less expensive alloys, decreasing maintenance, and increasing plant longevity. Key focus areas for follow-on work have been identified as 1) evaluation of the efficacy of the electrochemical method under turbulent conditions in a larger flow system, such as the FASTR loop, 2) development of methods for removal of purification byproducts, 3) modeling pilot and industrial scale performance of electrochemical salt purification during plant operation and 4) further assessment of the effect of impurities on salt vapor phase.

14 SOLAR ENERGY↗
NASA NTRS1972

Neutron radiation characteristics of plutonium dioxide fuel

The major sources of neutrons from plutonium dioxide nuclear fuel are considered in detail. These sources include spontaneous fission of several of the Pu isotopes, (alpha, n) reactions with low Z impurities in the fuel, and (alpha, n) reactions with O-18. For spontaneous fission neutrons a value of (1.95 + or - 0.07) X 1,000 n/s/g PuO2 is obtained. The neutron yield from (alpha, n) reactions with oxygen is calculated by integrating the reaction rate equation over all alpha-particle energies and all center-of-mass angles. The results indicate a neutron emission rate of (1.14 + or - 0.26) X 10,000 n/s/g PuO2. The neutron yield from (alpha, n) reactions with low Z impurities in the fuel is presented in tabular form for one part part per million of each impurity. The total neutron yield due to the combined effects of all the impurities depends upon the fractional weight concentration of each impurity. The total neutron flux emitted from a particular fuel geometry is estimated by adding the neutron yield due to the induced fission to the other neutron sources.

Taherzadeh, M.↗
NASA NTRS1982

Surface diffusion activation energy determination using ion beam microtexturing

The activation energy for impurity atom (adatom) surface diffusion can be determined from the temperature dependence of the spacing of sputter cones. These cones are formed on the surface during sputtering while simultaneously adding impurities. The impurities form clusters by means of surface diffusion, and these clusters in turn initiate cone formation. Values are given for the surface diffusion activation energies for various materials on polycrystalline Cu, Al, Pb, Au, and Ni. The values for different impurity species on each of these substrates are approximately independent of impurity species within the experimental uncertainty, suggesting the absence of strong chemical bonding effects on the diffusion.

Rossnagel, S. M.↗
NASA NTRS1983

Solar-Cell Slide Rule

Slide rule relates efficiency, impurity types, impurity concentrations, and process types. Solar cell slide rule calculations are determination of allowable impurity concentration for nonredistributive process, determination of impurity buildup factor for redistributive process and determination of allowable impurity concentration for redistributive process.

Yamakawa, K. A.↗