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At least 1,423 records · Page 79

Plasma characteristics of a 17 cm diameter line-cusp ion thruster

A 17 cm line cusp argon ion thruster has been subjected to a variety of tests using collecting probes in an attempt to determine and understand its plasma properties. Plasma density, space potential and electron temperature have been mapped throughout the interior of the device for several sets of operating conditions. Electron and ion losses have been measured in and near the cusps. Correlations between interior plasma properties and external parameters such as discharge current and beam current are made where appropriate and are found to be understandable in terms of basic plasma concepts. However, a simple model, which cannot account for spatial variations of the plasma parameters, is not able to predict the performance of the device. Directions for further work are discussed.

Carpenter, R. T.↗

Power and stability limitations of resonant tunneling diodes

Stability criteria for resonant tunneling diodes are investigated. Details of how extrinsic elements, such as series inductance and parallel capacitance, affect the stability are presented. A GaAs/AlAs/InGaAs/AlAs/GaAs double-barrier diode is investigated, showing the effect of different modes of low-frequency oscillation and the extrinsic circuit required for stabilization. The effect of device stabilization on high-frequency power generation is described. The main conclusions of the paper are: (1) stable resonant tunneling diode operation is difficult to obtain, and (2) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices.

Kidner, C.↗

Quasi‐Homojunction Organic Nonfullerene Photovoltaics Featuring Fundamentals Distinct from Bulk Heterojunctions

Abstract In contrast to classical bulk heterojunction (BHJ) in organic solar cells (OSCs), the quasi‐homojunction (QHJ) with extremely low donor content (≤10 wt.%) is unusual and generally yields much lower device efficiency. Here, representative polymer donors and nonfullerene acceptors are selected to fabricate QHJ OSCs, and a complete picture for the operation mechanisms of high‐efficiency QHJ devices is illustrated. PTB7‐Th:Y6 QHJ devices at donor:acceptor (D:A) ratios of 1:8 or 1:20 can achieve 95% or 64% of the efficiency obtained from its BHJ counterpart at the optimal D:A ratio of 1:1.2, respectively, whereas QHJ devices with other donors or acceptors suffer from rapid roll‐off of efficiency when the donors are diluted. Through device physics and photophysics analyses, it is observed that a large portion of free charges can be intrinsically generated in the neat Y6 domains rather than at the D/A interface. Y6 also serves as an ambipolar transport channel, so that hole transport as also mainly through Y6 phase. The key role of PTB7‐Th is primarily to reduce charge recombination, likely assisted by enhancing quadrupolar fields within Y6 itself, rather than the previously thought principal roles of light absorption, exciton splitting, and hole transport.

Chemistry↗

Doping as a tuning mechanism for magnetothermoelectric effects to improve z T in polycrystalline NbP

Weyl semimetals combine topological and semimetallic effects, making them candidates for interesting and effective thermoelectric transport properties. Here, we present experimental results on polycrystalline NbP, demonstrating the simultaneous existence of a large Nernst effect and a large magneto-Seebeck effect, which is typically not observed in a single material at the same temperature. We compare transport results from two polycrystalline samples of NbP with previously published work, observing a shift in the temperature at which the maximum Nernst and magneto-Seebeck thermopowers occur, while still maintaining thermopowers of similar magnitude. Theoretical modeling shows how doping strongly alters both the Seebeck and Nernst magneto-thermopowers by shifting the temperature-dependent chemical potential, and the corresponding calculations provide a consistent interpretation of our results. Thus, we offer doping as a tuning mechanism for shifting magneto-thermoelectric effects to temperatures appropriate for device applications, improving zT at desirable operating temperatures. Furthermore, the simultaneous presence of both a large Nernst and magneto-Seebeck thermopower is uncommon and offers unique device advantages if the thermopowers are used additively. Finally, we also propose a unique thermoelectric device which would collectively harness the large Nernst and magneto-Seebeck thermopowers to greatly enhance the output and zT of conventional thermoelectric devices.

30 DIRECT ENERGY CONVERSION↗

Charge Trap Layer Supercharging for Improved Bit Reliability in 3-D NAND Flash Under Proton Irradiation

Single-event upset (SEU) cross sections are reduced in 176-layer charge trap (CT) 3-D nand devices under proton irradiation when multiple write operations are applied sequentially without the typical erase-before-write. Here, this effect is observed for multiple data patterns and in both single-level cell (SLC) and triple-level cell (TLC) operating modes. SEU cross section calculation methodologies are discussed for highly scaled 3-D devices both with and without the application of rewrites, and potential implications for long-term endurance effects are proposed.

Breeding, Matthew Luel [Sandia National Laboratori↗

An investigation of potential applications of OP-SAPS: Operational sampled analog processors

The impact of charge-coupled device (CCD) processors on future instrumentation was investigated. The CCD devices studied process sampled analog data and are referred to as OP-SAPS - operational sampled analog processors. Preliminary studies into various architectural configurations for systems composed of OP-SAPS show that they have potential in such diverse applications as pattern recognition and automatic control. It appears probable that OP-SAPS may be used to construct computing structures which can serve as special peripherals to large-scale computer complexes used in real time flight simulation. The research was limited to the following benchmark programs: (1) face recognition, (2) voice command and control, (3) terrain classification, and (4) terrain identification. A small amount of effort was spent on examining a method by which OP-SAPS may be used to decrease the limiting ground sampling distance encountered in remote sensing from satellites.

Parrish, E. A.↗

Human operator control of a bilateral teleoperator in part-simulation of zero gravity

Remote manipulators (teleoperators) are defined as mechanical devices which extend human manipulative ability to operational environments which are either hostile to or remote from the human operator. Teleoperation involves the explicit and active inclusion of the human operator (HO) in the system control loop. An investigation of human/teleoperator control interactions in the orbital operational environment has been conducted, taking into account the employment of a model describing human neuromotor control as a linear damped harmonic oscillator. The application of this model for the specification of the end point position in teleoperator control is explored, and two experiments are conducted. The results indicate the potential utility of relatively simple models of neuromotor control processes in investigating the interaction of the human operator and controller in teleoperation.

Corker, K.↗

Simulation-based instruction of technical skills

A rapid intelligent tutoring development system (RAPIDS) was developed to facilitate the production of interactive, real-time graphical device models for use in instructing the operation and maintenance of complex systems. The tools allowed subject matter experts to produce device models by creating instances of previously defined objects and positioning them in the emerging device model. These simulation authoring functions, as well as those associated with demonstrating procedures and functional effects on the completed model, required no previous programming experience or use of frame-based instructional languages. Three large simulations were developed in RAPIDS, each involving more than a dozen screen-sized sections. Seven small, single-view applications were developed to explore the range of applicability. Three workshops were conducted to train others in the use of the authoring tools. Participants learned to employ the authoring tools in three to four days and were able to produce small working device models on the fifth day.

Towne, Douglas M.↗

Six axis force feedback input device

The present invention is a low friction, low inertia, six-axis force feedback input device comprising an arm with double-jointed, tendon-driven revolute joints, a decoupled tendon-driven wrist, and a base with encoders and motors. The input device functions as a master robot manipulator of a microsurgical teleoperated robot system including a slave robot manipulator coupled to an amplifier chassis, which is coupled to a control chassis, which is coupled to a workstation with a graphical user interface. The amplifier chassis is coupled to the motors of the master robot manipulator and the control chassis is coupled to the encoders of the master robot manipulator. A force feedback can be applied to the input device and can be generated from the slave robot to enable a user to operate the slave robot via the input device without physically viewing the slave robot. Also, the force feedback can be generated from the workstation to represent fictitious forces to constrain the input device's control of the slave robot to be within imaginary predetermined boundaries.

Ohm, Timothy↗

Characterization of the Vectron PX-570 Crystal Oscillator for Use in Harsh Environments

Computing hardware, data-acquisition systems, communications systems, and many electronic control systems require well-controlled timing signals for proper and accurate operation. These signals are, in most cases, provided by circuits that employ crystal oscillators due to availability, cost, ease of operation, and accuracy. In some cases, the electronic systems are expected to survive and operate under harsh conditions that include exposure to extreme temperatures. These applications exist in terrestrial systems as well as in aerospace products. Well-logging, geothermal systems, and industrial process control are examples of ground-based applications, while distributed jet engine control in aircraft, space-based observatories (such as the James Webb Space Telescope), satellites, and lunar and planetary landers are typical environments where electronics are exposed to harsh operating conditions. To ensure these devices produce reliable results, the digital heartbeat from the oscillator must deliver a stable signal that is not affected by external temperature or other conditions. One such solution is a recently introduced commercial-off-the-shelf (COTS) oscillator, the PX-570 series from Vectron International. The oscillator was designed for high-temperature applications and as proof, the crystal oscillator was subjected to a wide suite of tests to determine its ruggedness for operation in harsh environments. The tests performed by Vectron included electrical characterization under wide range of temperature, accelerated life test/aging, shock and vibration, internal moisture analysis, ESD threshold, and latch-up testing. The parametric evaluation was performed on the oscillator's frequency, output signal rise and fall times, duty cycle, and supply current over the temperature range of -125 C to +230 C. The evaluations also determined the effects of thermal cycling and the oscillator's re-start capability at extreme hot and cold temperatures. These thermal cycling and restart tests were performed at the NASA Glenn Research Center. Overall, the crystal oscillator performed well and demonstrated very good frequency stability. This paper will discuss the test procedures and present details of the performance results.

Li, Jacob↗

Comparison Between MAD-IPA Thrust Stand Measurements and Performance Modeling

The high specific impulse values associated with electric propulsion (EP) that allow for higher payload fractions than conventional, chemical propulsion are achieved by the acceleration of ionized propellant (plasma) by electromagnetic body forces. The lifetime of many EP devices is limited by electrode erosion caused by direct plasma-electrode interaction, while the efficiency is often limited by, among other thruster-specific factors, the available power in space. The efficiency can be increased during higher power operation since the amount of power required to ionize the propellant is fixed and decreases as a percentage of the increased input power. Pulsed inductive plasma accelerators [1-3] are a potentially elegant solution to the problems of high power demands and electrode erosion. The former is addressed in the pulsed nature of these devices, which allows for instantaneous operation on the order of megawatts while requiring a continuous supply on the order of only kilowatts, while the latter is addressed by inductive coupling of the thruster to ionized propellant. These devices operate by rapidly (on the order of microseconds) discharging stored energy at a given pulse repetition rate through a coil creating time-varying magnetic and electric fields that cause ionization, current formation and acceleration of propellant away from the coil. While the inductive (contact-less) nature of the energy transfer from the thruster to the propellant alleviates the problem of erosion and enables the use of in-situ and storable propellants incompatible with metallic electrodes, it places high voltage demands (on the order of tens of kilovolts) on the energy storage system to achieve propellant ionization.

Hallock, Ashley K.↗

High temperature electronic requirements in aeropropulsion systems

This paper discusses the needs for high temperature electronic and electro-optic devices as they would be used on aircraft engines in either research and development applications, or operational applications. The conclusion reached is that the temperature at which the devices must be able to function is in the neighborhood of 500 to 600 C either for R&D or for operational applications. In R&D applications the devices must function in this temperature range when in the engine but only for a moderate period of time. On an operational engine, the reliability requirements dictate that the devices be able to be burned-in at temperatures significantly higher than those at which they will function on the engine. The major point made is that semiconductor technology must be pushed well beyond the level at which silicon will be able to function.

Nieberding, W. C.↗

VLSI system for synthetic aperture radar /SAR/ processing

The paper discusses an SAR problem based on actual requirements set forth by NASA for a spaceborne application. The requirements for high resolution and high quality necessitate a data sampling rate of 7.5 MHz. For each data value 1,025 4-bit complex multiply + add operations are needed, which is equivalent to 7.7 GHz complex multiply + add operation rate. Since this rate is much too high for general purpose systems, a special-purpose device was sought. This paper discusses two architectures based on parallel operation of 1,025 identical cells, each of which is capable of performing arithmetic, storage, and several control operations. The operation rate in each device is only 7.5 MHz, which is quite manageable, especially with the help of a substantial degree of pipelining. A computational-mathematical analysis is used as a primary tool for evaluating the design and some of its tradeoffs. Two different approaches are discussed and compared; both are based on having 1,025 identical cells working in parallel, but differ in their dual approaches to the flow of data.

Cohen, D.↗

RaDIATE Collaboration for Material Studies

In the recent past, major accelerator facilities have been limited in beam power not by their accelerators, but by the beam intercepting device survivability. As next-generation accelerator target facilities (High Energy Physics, Spallation Sources, …) become increasingly more powerful and intense, high power target systems face key technical challenges. Beam-intercepting devices such as beam windows and secondary particle-production targets are continuously bombarded by high-energy high-intensity pulsed proton beams to produce secondary particles. Energy deposition from the primary beam induces near instantaneous heating (thermal shock) and microstructural changes (radiation damage) in the beam-intercepting materials. Both thermal shock and radiation damage ultimately degrade the performance and lifetime of targets and have been identified as the leading cross-cutting challenges of high-power target facilities. In order to operate reliable beam-intercepting devices in the framework of energy and intensity increase for next generation accelerators, the RaDIATE collaboration (Radiation Damage In Accelerator Target Environment) managed by Fermilab, brings together existing expertise in nuclear material and accelerator targets from 20 international institutions to execute a coordinated strategy for high power targetry R&D. This collaboration is generating new and useful materials data for application within the accelerator and the fission/fusion communities. I will give an overview of the RaDIATE R&D program and the achievement in the last few years on material studies in support of High Power Targetry development, including results obtained from irradiation test, development of novel materials and the prospective towards future irradiation campaign. A highlight will be given to the results in collaboration with our colleagues from J-PARC.

Pellemoine, Frederique↗

Reliability Testing of NASA Piezocomposite Actuators

NASA Langley Research Center has developed a low-cost piezocomposite actuator which has application for controlling vibrations in large inflatable smart space structures, space telescopes, and high performance aircraft. Tests show the NASA piezocomposite device is capable of producing large, directional, in-plane strains on the order of 2000 parts-per-million peak-to-peak, with no reduction in free-strain performance to 100 million electrical cycles. This paper describes methods, measurements, and preliminary results from our reliability evaluation of the device under externally applied mechanical loads and at various operational temperatures. Tests performed to date show no net reductions in actuation amplitude while the device was moderately loaded through 10 million electrical cycles. Tests were performed at both room temperature and at the maximum operational temperature of the epoxy resin system used in manufacture of the device. Initial indications are that actuator reliability is excellent, with no actuator failures or large net reduction in actuator performance.

Wilkie, W.↗

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced electron mobility as well as the processes that limit mobility, and will be presented.

Mueller, Carl↗

Performance Evaluation of Hierarchical Controls for Advanced Distribution Management System-Centered Grid Operations: Preprint

This paper presents a hardware-in-the-loop (HIL) platform to evaluate the performance of voltage regulation using an advanced distribution management system (ADMS) for grid operations to control legacy and grid-edge voltage control devices and coordinate with distributed energy management systems (DERMS) to manage high penetrations of photovoltaics (PV) on a utility distribution system. The HIL platform provides realistic laboratory testing, including accurate modeling (legacy devices, grid-edge devices, and PV) of the real-world distribution system from a utility partner, a real controller (ADMS), software controller DERMS, hardware grid-edge devices, and standard communications protocols. The test results show proper functionalities of the integrated platform and the performance of voltage regulation of the coordinated control systems. Based on laboratory testing, the utility can set up the same grid-automation system to manage DERs, legacy devices, and grid-edge devices to achieve their system-level control and operation objectives (e.g., voltage regulation), thus de-risking potential issues (e.g., instability) for field deployment.

ADMS↗

Design and performance evaluation of a dual-circuit thermal energy storage module for air conditioners

We present experimental results and a validated numerical model of a dual-circuit phase-change thermal energy storage module for air conditioners. The module incorporates a phase-change material encapsulated in compressed expanded natural graphite foam. We used n-tetradecane as the PCM with a transition temperature (~4.5 °C) suitable for air-conditioning applications. Heat exchange to and from the module is accomplished through two fluid loops operating as a heat source and sink embedded inside multiple slabs of the composite material. This dual-circuit design enables easier integration with air-conditioning equipment and provides enhanced flexibility in system operation as compared to the state-of-the-art thermal storage systems. When integrated with an air-conditioner, this design will enable peak-load shaving and enhances operational efficiency. The thermal storage device was designed for a nominal storage capacity of ~ 3.5 kWh. We evaluated the heat transfer and energy storage performance of this device using standalone heat transfer experiments to estimate key thermal resistances and identify design improvements before integration with an air conditioner. The numerical model of the heat exchanger uses a combination of discretized and lumped parameter approaches to maintain a balance between accuracy and computational expense. Our analyses show that the geometric features and integration of fluid tubes are key contributors to the thermal contact resistance between the fluid and the thermal storage material, and consequently, to the overall performance of the thermal storage module. Our standalone experiments also identified important operating scenarios in which this thermal storage module can be used for air-conditioning in buildings.

25 ENERGY STORAGE↗