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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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This study was undertaken to determine the effects of total ionizing dose (TID) on the JANTXV2N6284 NPN Darlington power bipolar junction transistor (BJT). The device was parametrically characterized prior to, at each incremental dose step, and after irradiation. Testing was at a low-dose rate using the NASA GSFC Radiation Effects Facility (REF).
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Presented at the CNMS User Meeting 2020, August 10-12, 2020, Virtual Conference, 8/10
Abstract not provided.
Abstract not provided.
TMS 2021 Annual Meeting & Exhibition, Virtual, March 15-18, 2021