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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,423 records · Page 79
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Improved thermoelectric power output from multilayered polyethylenimine doped carbon nanotube based organic composites

By appropriately selecting the carbon nanotube type and n-type dopant for the conduction layers in a multilayered carbon nanotube composite, the total device thermoelectric power output can be increased significantly. The particular materials chosen in this study were raw single walled carbon nanotubes for the p-type layers and polyethylenimine doped single walled carbon nanotubes for the n-type layers. The combination of these two conduction layers leads to a single thermocouple Seebeck coefficient of 96 ± 4 μVK{sup −1}, which is 6.3 times higher than that previously reported. This improved Seebeck coefficient leads to a total power output of 14.7 nW per thermocouple at the maximum temperature difference of 50 K, which is 44 times the power output per thermocouple for the previously reported results. Ultimately, these thermoelectric power output improvements help to increase the potential use of these lightweight, flexible, and durable organic multilayered carbon nanotube based thermoelectric modules in low powered electronics applications, where waste heat is available.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Magnetohydrodynamically stable plasma with supercritical current density at the axis

In this work, an analysis of magnetic perturbations in the GOL-3 experiment is given. In GOL-3, plasma is collectively heated in a multiple-mirror trap by a high-power electron beam. During the beam injection, the beam-plasma interaction maintains a high-level microturbulence. This provides an unusual radial profile of the net current (that consists of the beam current, current of the preliminary discharge, and the return current). The plasma core carries supercritical current density with the safety factor well below unity, but as a whole, the plasma is stable with q(a) ≈ 4. The net plasma current is counter-directed to the beam current; helicities of the magnetic field in the core and at the edge are of different signs. This forms a system with a strong magnetic shear that stabilizes the plasma core in good confinement regimes. We have found that the most pronounced magnetic perturbation is the well-known n = 1, m = 1 mode for both stable and disruptive regimes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Introduction to energy storage with market analysis and outlook

At first, the rechargeable battery market in 2012 will be described by technology - lead acid, NiCd, NiMH, lithium ion - and application - portable electronics, power tools, e-bikes, automotive, energy storage. This will be followed by details of the lithium ion battery market value chain from the raw material to the final application. The lithium ion battery market of 2012 will be analyzed and split by applications, form factors and suppliers. There is also a focus on the cathode, anode, electrolyte and separator market included. This report will also give a forecast for the main trends and the market in 2020, 2025. To conclude, a forecast for the rechargeable battery market by application for 2025 will be presented. Since energy storage plays an important role for the growing Electric Vehicle (EV) market, this EV issue is closely considered throughout this analysis.

25 ENERGY STORAGE↗
DOE OSTI2014

Mechanical confinement for improved energy storage density in BNT-BT-KNN lead-free ceramic capacitors

With the advent of modern power electronics, embedded circuits and non-conventional energy harvesting, the need for high performance capacitors is bound to become indispensible. The current state-of-art employs ferroelectric ceramics and linear dielectrics for solid state capacitance. However, lead-free ferroelectric ceramics propose to offer significant improvement in the field of electrical energy storage owing to their high discharge efficiency and energy storage density. In this regards, the authors have investigated the effects of compressive stress as a means of improving the energy storage density of lead-free ferroelectric ceramics. The energy storage density of 0.91(Bi{sub 0.5}Na{sub 0.5})TiO{sub 3}-0.07BaTiO{sub 3}-0.02(K{sub 0.5}Na{sub 0.5})NbO{sub 3} ferroelectric bulk ceramic was analyzed as a function of varying levels of compressive stress and operational temperature .It was observed that a peak energy density of 387 mJ.cm{sup -3} was obtained at 100 MPa applied stress (25{sup o}C). While a maximum energy density of 568 mJ.cm{sup -3} was obtained for the same stress at 80{sup o}C. These values are indicative of a significant, 25% and 84%, improvement in the value of stored energy compared to an unloaded material. Additionally, material's discharge efficiency has also been discussed as a function of operational parameters. The observed phenomenon has been explained on the basis of field induced structural transition and competitive domain switching theory.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Numerical study of effect of secondary electron emission on discharge characteristics in low pressure capacitive RF argon discharge

Based on the drift and diffusion approximation theory, a 1D fluid model on capacitively coupled RF argon glow discharge at low pressure is established to study the effect of secondary electron emission (SEE) on the discharge characteristics. The model is numerically solved by using a finite difference method and the numerical results are obtained. The numerical results indicate that when the SEE coefficient is larger, the plasma density is higher and the time of reaching steady state is longer. It is also found that the cycle-averaged electric field, electric potential, and electron temperature change a little as the SEE coefficient is increased. Moreover, the discharge characteristics in some nonequilibrium discharge processes with different SEE coefficients have been compared. The analysis shows that when the SEE coefficient is varied from 0.01 to 0.3, the cycle-averaged electron net power absorption, electron heating rate, thermal convective term, electron energy dissipation, and ionization all have different degrees of growth. While the electron energy dissipation and ionization are quite special, there appear two peaks near each sheath region in the discharge with a relatively larger SEE coefficient. In this case, the discharge is certainly operated in a hybrid α-γ-mode.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

An analytical study on the diffraction quality factor of open cavities

Open cavities are often employed as interaction structures in a new generation of coherent millimeter, sub-millimeter, and terahertz (THz) radiation sources called the gyrotron. One of the open ends of the cavity is intended for rapid extraction of the radiation generated by a powerful electron beam. Up to the sub-THz regime, the diffraction loss from this open end dominates over the Ohmic losses on the walls, which results in a much lower diffraction quality factor (Q{sub d}) than the Ohmic quality factor (Q{sub ohm}). Early analytical studies have led to various expressions for Q{sub d} and shed much light on its properties. In this study, we begin with a review of these studies, and then proceed with the derivation of an analytical expression for Q{sub d} accurate to high order. Its validity is verified with numerical solutions for a step-tunable cavity commonly employed for the development of sub-THz and THz gyrotrons. On the basis of the results, a simplified equation is obtained which explicitly expresses the scaling laws of Q{sub d} with respect to mode indices and cavity dimensions.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2014

A charge transport study in diamond, surface passivated by high-k dielectric oxides

The recent progress in the growth of high-quality single-crystalline diamond films has sparked interest in the realization of efficient diamond power electronic devices. However, finding a suitable passivation is essential to improve the reliability and electrical performance of devices. In the current work, high-k dielectric materials such as aluminum oxide and hafnium oxide were deposited by atomic layer deposition on intrinsic diamond as a surface passivation layer. The hole transport properties in the diamond films were evaluated and compared to unpassivated films using the lateral time-of-flight technique. An enhancement of the near surface hole mobility in diamond films of up to 27% is observed when using aluminum oxide passivation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and {sup 15}N isotopes

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters and for power electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Characteristics of temperature rise in variable inductor employing magnetorheological fluid driven by a high-frequency pulsed voltage source

A variable inductor with magnetorheological (MR) fluid has been successfully applied to power electronics applications; however, its thermal characteristics have not been investigated. To evaluate the performance of the variable inductor with respect to temperature, we measured the characteristics of temperature rise and developed a numerical analysis technique. The characteristics of temperature rise were determined experimentally and verified numerically by adopting a multiphysics analysis technique. In order to accurately estimate the temperature distribution in a variable inductor with an MR fluid-gap, the thermal solver should import the heat source from the electromagnetic solver to solve the eddy current problem. To improve accuracy, the B–H curves of the MR fluid under operating temperature were obtained using the magnetic property measurement system. In addition, the Steinmetz equation was applied to evaluate the core loss in a ferrite core. The predicted temperature rise for a variable inductor showed good agreement with the experimental data and the developed numerical technique can be employed to design a variable inductor with a high-frequency pulsed voltage source.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Tailoring the dipole properties in dielectric polymers to realize high energy density with high breakdown strength and low dielectric loss

High energy density polymer materials are desirable for a broad range of modern power electronic systems. Here, we report the development of a new class of polymer dielectrics based on polyurea and polythiourea, which possess high thermal stability. By increasing the dipole density, the dielectric constant of meta-phenylene polyurea and methylene polythiourea can be increased to 5.7, compared with aromatic polyurea and aromatic polythiourea, which have a dielectric constant in the range of 4.1–4.3. The random dipoles with high dipolar moment and amorphous structure of these polyurea and polythiourea based polymers provide strong scattering to the charge carriers, resulting in low losses even at high electric fields. Consequently, this new class of polymers exhibit a linear dielectric response to the highest field measured (>700 MV/m) with a high breakdown strength, achieving high energy density (>13 J/cm{sup 3}) with high efficiency (>90%)

36 MATERIALS SCIENCE↗
DOE OSTI2015

Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Time temperature transformation diagram for secondary crystal products of Co-based Co-Fe-B-Si-Nb-Mn soft magnetic nanocomposite

Secondary crystallization is the subject of much investigation in magnetic amorphous and nanocomposites (MANCs) as it limits the long term and thermal stability of their operation in device applications, including power electronics, sensors, and electric motors. Secondary crystal products [Blazquez et al., Philos. Mag. Lett. 82(7), 409–417 (2002); Ohodnicki et al., Phys. Rev. B 78, 144414 (2008); Willard et al., Metall. Mater. Trans. A 38, 725 (2007)], nanostructure and crystallization kinetics [Hsiao et al., IEEE Trans. Magn. 38(5), 3039 (2002); McHenry et al., Scr. Mater. 48(7), 881 (2003)], and onset temperatures and activation energies [Ohodnicki et al., Acta. Mater. 57, 87 (2009); Long et al., J. Appl. Phys. 101, 09N114 (2007)] at constant heating have been reported for similar alloys. However, a time-temperature-transformation (TTT) diagram for isothermal crystallization, more typical of application environments, has not been reported in literature. Here, a TTT diagram for the Co based, Co-Fe-Si-Nb-B-Mn MANC system is presented, along with a method for determining such. The method accounts for the presence of primary crystal phases and yields crystal fraction of secondary phase(s) by using a novel four stage heating profile. The diagram, affirmed by Kissinger activation energy analysis, reports thermal stability of the MANC for millennia at conventional device operating temperatures, and stability limits less than a minute at elevated temperatures. Both extremes are necessary to be able to avoid secondary crystalline products and establish operating limits for this mechanically attractive, high induction soft magnetic nanocomposite.

36 MATERIALS SCIENCE↗
DOE OSTI2015

In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy

Nitride wide-band-gap semiconductors are used to make high power electronic devices or efficient light sources. The performance of GaN-based devices is directly linked to the initial AlN buffer layer. During the last twenty years of research on nitride growth, only few information on the AlN surface quality have been obtained, mainly by ex-situ characterization techniques. Thanks to a Non Contact Atomic Force Microscope (NC-AFM) connected under ultra high vacuum (UHV) to a dedicated molecular beam epitaxy (MBE) chamber, the surface of AlN(0001) thin films grown on Si(111) and 4H-SiC(0001) substrates has been characterized. These experiments give access to a quantitative determination of the density of screw and edge dislocations at the surface. The layers were also characterized by ex-situ SEM to observe the largest defects such as relaxation dislocations and hillocks. The influence of the growth parameters (substrate temperature, growth speed, III/V ratio) and of the initial substrate preparation on the dislocation density was also investigated. On Si(111), the large in-plane lattice mismatch with AlN(0001) (19%) induces a high dislocation density ranging from 6 to 12×10{sup 10}/cm{sup 2} depending on the growth conditions. On 4H-SiC(0001) (1% mismatch with AlN(0001)), the dislocation density decreases to less than 10{sup 10}/cm{sup 2}, but hillocks appear, depending on the initial SiC(0001) reconstruction. The use of a very low growth rate of 10 nm/h at the beginning of the growth process allows to decrease the dislocation density below 2 × 10{sup 9}/cm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Crystallographic and magnetic properties of the spinel-type ferrites Zn{sub x}Co{sub 1-x}Fe{sub 2}O{sub 4} (0.0 ≤ x ≤ 0.75)

Ultrahigh frequencies (UHF) have applications in signal and power electronics to minimize product sizes, increase production quantity and lower manufacturing cost. In the UHF range of 300 MHz to 3 GHz, ferrimagnetic iron oxides (ferrites) are especially useful because they combine the properties of a magnetic material with that of an electrical insulator. Ferrites have much higher electrical resistivity than metallic ferromagnetic materials, resulting in minimization of the eddy current losses, and total penetration of the electromagnetic (EM) field. Hence ferrites are frequently applied as circuit elements, magnetic storage media like read/write heads, phase shifters and Faraday rotators. The electromagnetic properties of ferrites are affected by operating conditions such as field strength, temperature and frequency. The spinel system Zn{sub x}Co{sub 1-x}Fe{sub 2}O{sub 4} (x=0.0, 0.25, 0.50 and 0.75) has been prepared by the standard solid state sintering method. X-ray and neutron powder diffraction measurements were performed at room temperature. Neutron diffraction data analysis confirms the cubic symmetry corresponding to the space group Fd3m. The distribution of three cations Zn{sup 2+}, Co{sup 2+} and Fe{sup 3+} over the spinel lattice and other crystallographic parameters like lattice constant, oxygen position parameter, overall temperature factor and occupancies of different ions in different lattice sites for the samples have been determined from the analysis of neutron diffraction data. The lattice constant increases with increasing Zn content in the system. The magnetic structure was found to be ferrimagnetic for the samples with x≤0.50. Magnetization measurements show that with the increase of Zn content in the system the value of saturation magnetization first increases and then decreases. The variation of the magnetic moment with Zn substitution has been discussed in terms of the distribution of magnetic and non-magnetic ions over the A and B sub-lattices and their exchange coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Excellent performances of energy harvester using cantilever driving double-clamped 0.7Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.3PbTiO{sub 3} plates and symmetric middle-stops

We present a high performance nonlinear piezoelectric energy harvester constituted by a cantilever with symmetrically middle-stops and double-clamped piezoelectric plates based on piezoelectric single crystal 0.7Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}-0.3PbTiO{sub 3}. Electrical properties of the device under different excitation frequencies, accelerations, and load resistances are studied systematically. Under a low acceleration of 3 m/s{sup 2} (0.3 g), a peak voltage of 26.2 V and a maximum normalized power of 25.6 mW/g{sup 2} were obtained across a matching impedance of 600 kΩ with favorable bandwidths. The low excitation acceleration and excellent performances indicate that the device can be a promising candidate for energy harvesting in low-power electronics and wireless sensors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Electrically controlled pinning of Dzyaloshinskii-Moriya domain walls

We propose a method to all-electrically control a domain-wall position in a ferromagnetic nanowire with Dzyaloshinskii-Moriya interaction. The strength of this interaction can be controlled by an external electric field, which in turn allows a fine tuning of the pinning potential of a spin-spiral domain wall. It allows to create more mobile pinning sites and can also be advantageous for ultra-low power electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Formation of high electrical-resistivity thin surface layer on carbonyl-iron powder (CIP) and thermal stability of nanocrystalline structure and vortex magnetic structure of CIP

This study focuses on the carbonyl-iron powder (CIP) used in the metal composite bulk magnetic core for high-efficient/light-weight SiC/GaN power device MHz switching dc-dc converter, where the fine CIP with a mean diameter of 1.1 μm is used to suppress the MHz band eddy current inside the CIP body. When applying the CIP to composite core together with the resin matrix, high electrical resistivity layer must be formed on the CIP-surface in order to suppress the overlapped eddy current between adjacent CIPs. In this study, tens nm thick silica (SiO{sub 2}) was successfully deposited on the CIP-surface by using hydrolysis of TEOS (Si(OC{sub 2}H{sub 5}){sub 4}). Also tens nm thick oxidized layer of the CIP-surface was successfully formed by using CIP annealing in dry air. The SiC/GaN power device can operate at ambient temperature over 200 degree-C, and the composite magnetic core is required to operate at such ambient temperature. The as-made CIP had small coercivity below 800 A/m (10 Oe) due to its nanocrystalline-structure and had a single vortex magnetic structure. From the experimental results, both nanocrystalline and single vortex magnetic structure were maintained after heat-exposure of 250 degree-C, and the powder coercivity after same heat-exposure was nearly same as that of the as-made CIP. Therefore, the CIP with thermally stable nanocrystalline-structure and vortex magnetic state was considered to be heat-resistant magnetic powder used in the iron-based composite core for SiC/GaN power electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗