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At least 1,423 records · Page 79

Partial discharge suppression in high voltage solid-state devices

Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Sampayan, Stephen↗

Topology optimization of compliant mechanisms under transient thermal conditions

This work considers multi-material topology optimization of compliant mechanisms under transient thermal and quasi-static mechanical conditions wherein thermally actuated devices are optimized for different operating conditions. The materials are modeled using finite strain thermo-hyperelasticity and a two way coupling between the energy balance and equilibrium equations is investigated. The design updates are generated from the gradient-based method of moving asymptotes optimizer and the sensitivities are computed using the time dependent adjoint sensitivity analysis. Results show the impact of designing for short versus long actuation times.

42 ENGINEERING↗

Identification of high-dielectric constant compounds from statistical design

Abstract The discovery of high-dielectric materials is crucial to increasing the efficiency of electronic devices and batteries. Here, we report three previously unexplored materials with very high dielectric constants (69 < ϵ < 101) and large band gaps (2.9 < E g (eV) < 5.5) obtained by screening materials databases using statistical optimization algorithms aided by artificial neural networks (ANN). Two of these new dielectrics are mixed-anion compounds (Eu 5 SiCl 6 O 4 and HoClO) and are shown to be thermodynamically stable against common semiconductors via phase diagram analysis. We also uncovered four other materials with relatively large dielectric constants (20 < ϵ < 40) and band gaps (2.3 < E g (eV) < 2.7). While the ANN training-data are obtained from the Materials Project, the search-space consists of materials from the Open Quantum Materials Database (OQMD)—demonstrating a successful implementation of cross-database materials design. Overall, we report the dielectric properties of 17 materials calculated using ab initio calculations, that were selected in our design workflow. The dielectric materials with high-dielectric properties predicted in this work open up further experimental research opportunities.

36 MATERIALS SCIENCE↗

A butterfly-shaped acceptor with rigid skeleton and unique assembly enables both efficient organic photovoltaics and high-speed organic photodetectors

ABSTRACT It remains challenging to design efficient bifunctional semiconductor materials in organic photovoltaic and photodetector devices. Here, we report a butterfly-shaped molecule, named WD-6, which exhibits low energy disorder and small reorganization energy due to its enhanced molecular rigidity and unique assembly with strong intermolecular interaction. The binary photovoltaic device based on PM6:WD-6 achieved an efficiency of 18.41%. Notably, an efficiency of 19.42% was achieved for the ternary device based on PM6:BTP-eC9:WD-6. Moreover, the photodetection device based on WD-6 demonstrated an ultrafast response speed (205 ns response time at λ of 820 nm) and a high cutoff frequency of −3 dB (2.45 MHz), surpassing the values of most commercial Si photodiodes. Based on these findings, we showcased an application of the WD-6-based photodetection device in high-speed optical communication. These results offer valuable insights into the design of organic semiconductor materials capable of simultaneously exhibiting high photovoltaic and photodetective performance.

Science & Technology - Other Topics↗

Amorphous Metal Ribbon (AMR) and Metal Amorphous Nanocomposite (MANC) Materials Enabled High Power Density Vehicle Motor Applications (Final Technical Report)

A collaborative team from Carnegie Mellon Univ. (CMU), North Carolina State Univ. (NCSU) and Metglas, South Carolina have studied new high speed motors (HSMs) with high-power density for traction motor applications. These are enabled by hybrid designs, including Flux Switching with Permanent Magnets (FSWPM) motors, exploiting permanent magnets without heavy rare earths (RE-lean) and high induction/high resistivity soft magnetic materials that allow for high switching frequencies needed to increase power densities. Team members include Michael E. McHenry, Prof. Materials Science & Eng., CMU, with > 30 years experience in magnetic materials development; Subashish Bhattacharya, Prof. Electrical Eng. and Freedom Center Director at NCSU with > 30 years experience in development of power electronic components and systems and Eric Theisen, Director of Research at Metglas, the only US located supplier of AMR and MANC materials. The team offers novel axial motor architectures exploiting soft magnetic materials (SMMs) that switch with low loss at high frequencies and heavy rare earth free permanent magnets that address materials criticality issues, supply chain risks, and high costs for traction motors. Axial-flux permanent magnet motors (APFM), offer efficiency improvements reducing rotor losses and also significantly higher power density. Axial-flux construction requires less core material, high torque-to-weight ratio. Since AFPM machines have thin magnets, they are smaller than radial flux motors making them attractive in space-limited applications. Noise and vibration are less and planar air gaps are easily adjusted. Flexibility in air-gap direction allows many topologies.

36 MATERIALS SCIENCE↗

Sweat collection capsule

A sweat collection capsule permitting quantitative collection of sweat is described. The device consists of a frame held immobile on the skin, a closure secured to the frame and absorbent material located next to the skin in a cavity formed by the frame and the closure. The absorbent material may be removed from the device by removing the closure from the frame while the frame is held immobile on the skin.

Greenleaf, J. E.↗

An overview of silicon carbide device technology

Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.

Neudeck, Philip G.↗

Method and Apparatus for the Portable Identification Of Material Thickness And Defects Along Uneven Surfaces Using Spatially Controlled Heat Application

A method and apparatus for testing a material such as the water-wall tubes in boilers includes the use of a portable thermal line heater having radiation shields to control the amount of thermal radiation that reaches a thermal imager. A procedure corrects for variations in the initial temperature of the material being inspected. A method of calibrating the testing device to determine an equation relating thickness of the material to temperatures created by the thermal line heater uses empirical data derived from tests performed on test specimens for each material type, geometry, density, specific heat, speed at which the line heater is moved across the material and heat intensity.

Reilly, Thomas L.↗

A design study of a photorefractive page composer

A laboratory demonstration and preliminary system analysis of a page composer designed to have the dual advantages of low optical loss and small size, were reported. The current page composer is optically addressed and functions by virtue of optically induced refractive index changes in the active material. Laboratory demonstrations of the device were successfully performed using 10 x 10 bit and 128 x 128 bit data arrays. It was established that the only significant obstacle to the construction of a brass-board model working at megabit data rates is the lack of sensitivity of the photorefractive materials which were considered during the course of this study. Possible materials for future consideration are the photoplastics. While they have more than the required sensitivity, their stability and suitability for double exposure holography was not investigated. If a sufficiently sensitive material is found, then the photorefractive page composer could be built to perform in a highly efficient fashion which would result in a overall reduction of the size of the memory system and an easing of the requirements upon the sensitivity of the holographic recording material.

Source record↗

Superconductivity devices: Commercial use of space

The high T(sub c) superconducting ceramic materials, developed in 1987, are now being extensively investigated for a variety of engineering applications. These applications include such devices as conducting links, rotating and linear bearings, sensors, filters, switches, high Q cavities, magnets, and motors. Some of these devices take advantage of the material's ability to lose all electrical resistance at a critical temperature, T(sub c), while others make use of the repulsion forces generated between the magnetic field of a permanent magnet and a superconductor which is cooled below its T(sub c), Meissner effect. This report describes the work accomplished to date by: (1) reviewing the present state of the art in actuator technology, (2) evaluating processing and fabrication of high strain electrostrictive materials, and (3) testing these electrostrictive materials.

Haertling, Gene↗

Power requirements for space crystal growth

The need for power to grow silicon of a size suitable to make into devices is addressed. The expected results are tied to available power. The projection of the size of float zone crystals as a function of time is discussed. An accompanying graph shows that 4 in. will be the normally used diameter by 1985 and 5 in. by 1990. Material to be tested in device lines in this time frame should be 4 in. or more. The various power losses, 25 kW with a 50% power efficiency, which is much improved over present RF heating efficiencies.

Kern, E. L.↗

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS 2 for Multi-Purposed Nanofabrication

Molybdenum disulfide (MoS 2 ) has been extensively explored to be utilized as an electronic material in a variety of device applications. In particular, the tunability of MoS 2 enhances its electrical properties making it an intriguing candidate for field-effect transistors (FETs), while also extending beyond electrical properties to structural phase engineering. Laser-induced modifications, particularly with Raman lasers, offer a straightforward method to modulate materials via thermal processes with precise patterning control and energy-level flexibility. However, most studies on the modification of MoS 2 have focused on multilayered structures or have been conducted under low-power laser conditions, leaving the feasibility of structural modifications in monolayer MoS 2 elusive. In this study, we fundamentally elucidated the effects of high-power Raman laser irradiation on the surface of chemical vapor deposition (CVD)-grown monolayer MoS 2 under ambient conditions and uncovered the underlying mechanisms of laser-induced modifications by applying intense photon energy with highly interactive reactions. Our results revealed both etching and deposition phenomena in two discernible regions, and it can be demonstrated by intensity regimes based on the spatial distribution of laser irradiance within the laser-irradiated spot. Furthermore, phase transition was found to be inhibited due to the promoted oxidation and the deposition of hydrogenated amorphous carbon (a-C:H), and p-type doping was observed, likely occurring in the region beneath the a-C:H deposition as substitutional doping on the 2H phase of MoS 2 . To compare the thermal effects, MoS 2 modifications were further analyzed using simplified heat transfer estimations. In conclusion, these findings deepen our understanding of how Raman laser irradiation modifies MoS 2 under ambient conditions, providing guidelines for optimizing its modification processes.

36 MATERIALS SCIENCE↗

Wide Band Gap Chalcogenide Semiconductors

Wide band gap semiconductors are essential for today’s electronic devices and energy applications because of their high optical transparency, controllable carrier concentration, and tunable electrical conductivity. The most intensively investigated wide band gap semiconductors are transparent conductive oxides (TCOs), such as tin-doped indium oxide (ITO) and amorphous In–Ga–Zn–O (IGZO), used in displays and solar cells, carbides (e.g., SiC) and nitrides (e.g., GaN) used in power electronics, and emerging halides (e.g., γ-CuI) and 2D electronic materials (e.g., graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out because of their propensity for p-type doping, high mobilities, high valence band positions (i.e., low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent semiconductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (EG > 2 eV) chalcogenide materials—namely, II–VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed-anion layered CuMCh(O,F), and 2D materials—and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. Then, we finally review applications—for example, photovoltaic and photoelectrochemical solar cells, transistors, and light emitting diodes—that employ wide band gap chalcogenides as either an active or passive layer. Overall, by examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this Review aims to inspire continued research on this emerging class of transparent semiconductors and thereby enable future innovations for optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Spin injection by spin–charge coupling in proximity induced magnetic graphene

Abstract Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proximity of an interlayer antiferromagnet, chromium sulfide bromide (CrSBr). We clearly demonstrate that the usage of the conventional air-sensitive 3D magnetic contacts can be fully avoided when graphene/CrSBr heterostructures are employed. Moreover, apart from providing exceptionally long spin relaxation length, the usage of graphene for both generation and transport of the spin allows to automatically avoid the conductivity mismatch between the source and the channel circuits that has to be considered when using conventional low-resistive contacts. Our results address a necessary step in the engineering of spintronic circuitry out of layered materials and precede further developments in the area of complex spin-logic devices. Moreover, we introduce a fabrication procedure where we designed and implemented a recipe for the preparation of electrodes via a damage-free technique that offers an immediate advantage in the fields of air-sensitive and delicate organic materials.

36 MATERIALS SCIENCE↗

A Hybrid Actuation System Demonstrating Significantly Enhanced Electromechanical Performance

A hybrid actuation system (HYBAS) utilizing advantages of a combination of electromechanical responses of an electroactive polymer (EAP), an electrostrictive copolymer, and an electroactive ceramic single crystal, PZN-PT single crystal, has been developed. The system employs the contribution of the actuation elements cooperatively and exhibits a significantly enhanced electromechanical performance compared to the performances of the device made of each constituting material, the electroactive polymer or the ceramic single crystal, individually. The theoretical modeling of the performances of the HYBAS is in good agreement with experimental observation. The consistence between the theoretical modeling and experimental test make the design concept an effective route for the development of high performance actuating devices for many applications. The theoretical modeling, fabrication of the HYBAS and the initial experimental results will be presented and discussed.

Su, Ji↗

Sealing ceramic material in low melting point glass

A structured device placed in an aerated crucible to pack ceramics molding substance that is to be processed was designed. The structure is wrapped by sealing material made of pyrex glass and graphite foil or sheet with a weight attached on top of it. The crucible is made of carbon; the ceramics material to be treated through heat intervenient press process is molding substance consisting mainly of silicon nitride.

Moritoki, M.↗

Final Design and Analysis of the Superconducting Magnets for the Material Plasma Exposure Experiment

The Material Plasma Exposure eXperiment (MPEX), which has completed its final design, is a new linear plasma device to advance the understanding of plasma-material interactions through the generation and delivery of plasmas as they are expected in future fusion reactor divertors. MPEX will be a steady-state device to study high-fluence exposures of plasma-facing materials and components. The requirements for the magnetic field at the heating stages and the target make the application of superconducting coils necessary. The final designs for the superconducting magnets have been developed using three cryostat designs with warm bore diameters of 65 cm and 156 cm. The large bores are required to for other systems such as vacuum, water cooling, and RF power. There are 19 superconducting coils in MPEX that are contained in six cryostats. Although design, fabrication, and testing for the magnets as stand-alone units are straightforward, challenges will arise during the integration of the system. Various field profiles will be used during operation. The magnetic field where the electron cyclotron heating occurs needs to operate at both 1.25 and 2.50 T. Analyses that have been performed on the final design include designing the coils and determining operating currents to meet field requirements, forces between cryostats, the effects of coil and/or cryostat movement, and quench analysis. To ensure that the magnetic field requirements are met, a plan for monitoring the magnetic field at specified locations has been developed which includes the effect of coil and/or cryostat movement.

Burkhardt, Earle↗