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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,423 records · Page 79
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Soft x-ray appearance potential spectroscopy study of MgO (100) and α-Al{sub 2}O{sub 3} (100) single crystals

Soft x-ray appearance potential spectroscopy (SXAPS) measurements was used to measure on MgO (100) and α-Al{sub 2}O{sub 3} (100) single crystals. Mg 1s, Al 1s, and O 1s SXAPS self-deconvoluted (SD) spectra were obtained. The features of the Mg 1s and O1s SD spectra are in fair agreement with those of the near-edge x-ray absorption fine structure spectra for an MgO thin film (3 ML) on Ag (100). This suggests that the SXAPS spectra reflect electronic states of the relaxed MgO (100) surface. The features of the Al 1s and O 1s SD spectra are in qualitative agreement with those of the electron energy-loss spectroscopy. The SXAPS SD spectra are discussed in terms of antibonding states and partial density of empty states obtained by theoretical calculations for MgO and α-Al{sub 2}O{sub 3,} respectively. The present result suggests that the “approximate dipole selection rule” is applicable to the SXAPS spectra of MgO and α-Al{sub 2}O{sub 3}, as well as 3d transition metal oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

On the reliability of nanoindentation hardness of Al{sub 2}O{sub 3} films grown on Si-wafer by atomic layer deposition

The interest in applying thin films on Si-wafer substrate for microelectromechanical systems devices by using atomic layer deposition (ALD) has raised the demand on reliable mechanical property data of the films. This study aims to find a quick method for obtaining nanoindentation hardness of thin films on silicon with improved reliability. This is achieved by ensuring that the film hardness is determined under the condition that no plastic deformation occurs in the substrate. In the study, ALD Al{sub 2}O{sub 3} films having thickness varying from 10 to 600 nm were deposited on a single-side polished silicon wafer at 300 °C. A sharp cube-corner indenter was used for the nanoindentation measurements. A thorough study on the Si-wafer reference revealed that at a specific contact depth of about 8 nm the wafer deformation in loading transferred from elastic to elastic–plastic state. Furthermore, the occurrence of this transition was associated with a sharp increase of the power-law exponent, m, when the unloading data were fitted to a power-law relation. Since m is only slightly material dependent and should fall between 1.2 and 1.6 for different indenter geometry having elastic contact to common materials, it is proposed that the high m values are the results from the inelastic events during unloading. This inelasticity is linked to phase transformations during pressure releasing, a unique phenomenon widely observed in single crystal silicon. Therefore, it is concluded that m could be used to monitor the mechanical state of the Si substrate when the whole coating system is loaded. A suggested indentation depth range can then be assigned to each film thickness to provide guidelines for obtaining reliable property data. The results show good consistence for films thicker than 20 nm and the nanoindentation hardness is about 11 GPa independent of film thickness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Vibrational spectra of CO adsorbed on oxide thin films: A tool to probe the surface defects and phase changes of oxide thin films

Thin films of iron oxide were grown on Pt(111) single crystals using cycles of physical vapor deposition of iron followed by oxidative annealing in an ultrahigh vacuum apparatus. Two procedures were utilized for film growth of ∼15–30 ML thick films, where both procedures involved sequential deposition+oxidation cycles. In procedure 1, the iron oxide film was fully grown via sequential deposition+oxidation cycles, and then the fully grown film was exposed to a CO flux equivalent to 8 × 10{sup −7} millibars, and a vibrational spectrum of adsorbed CO was obtained using infrared reflection-absorption spectroscopy. The vibrational spectra of adsorbed CO from multiple preparations using procedure 1 show changes in the film termination structure and/or chemical nature of the surface defects—some of which are correlated with another phase that forms (“phase B”), even before enough of phase B has formed to be easily detected using low energy electron diffraction (LEED). During procedure 2, CO vibrational spectra were obtained between deposition+oxidation cycles, and these spectra show that the film termination structure and/or chemical nature of the surface defects changed as a function of sequential deposition+oxidation cycles. The authors conclude that measurement of vibrational spectra of adsorbed CO on oxide thin films provides a sensitive tool to probe chemical changes of defects on the surface and can thus complement LEED techniques by probing changes not visible by LEED. Increased use of vibrational spectra of adsorbed CO on thin films would enable better comparisons between films grown with different procedures and by different groups.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Fabrication of Sr silicate buffer layer on Si(100) substrate by pulsed laser deposition using a SrO target

The authors fabricated 2 × 1 Sr-reconstructed Si(100) substrates using thin SrO layers, and used them to direct growth of crystalline perovskite oxide on Si. The SrO layers used to reconstruct the Si(100) substrates were grown by pulsed laser deposition from a SrO single crystal target, followed by postdeposition-annealing (PDA) of the SrO/Si(100) structure. In situ observations of reflective high-energy electron diffraction during PDA confirmed a 2 × 1 reconstruction of the Si surface and x-ray photoemission spectroscopy of the annealed samples confirmed the existence of Sr atoms in a silicate phase, which indicated that a 2 × 1 Sr-reconstructed Si surface was achieved. The optimal fabrication conditions were annealing at 720 °C for 1 min and an equivalent SrO layer thickness (ML{sub eq}) of 2.5 ML{sub eq}. The temperature condition was very narrow, at 720 ± 20 °C, for an acceptable product. Subsequently, the authors demonstrated the growth of crystalline SrTiO{sub 3} films on the 2 × 1 Sr-reconstructed Si(100) surfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Mounting a thermocouple of type E onto a Cu single crystal for use in a magnetically sensitive environment below 77 K

Type E thermocouples show magnetic effects at liquid nitrogen temperature and below. This may cause trouble in experiments that are sensitive to magnetic stray fields like nuclear magnetic resonance, photoemission or high resolution electron energy loss spectroscopy. Here, a solution for the temperature measurement of a single crystal is presented. The authors weld a copper rod onto the back side of the single crystal, thereby relocating the sensitive sample from the thermocouple attachment position. They show that it is possible to measure the crystal temperature at the end of the rod while significantly reducing the ferromagnetic influence due to the increased distance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF{sub 3} and NF{sub 3}/Ar mixture gas plasmas

In pure NF{sub 3} plasma, the etching rates of four kinds of single-crystalline SiC wafer etched at NF{sub 3} pressure of 2 Pa were the highest and it decreased with an increase in NF{sub 3} pressure. On the other hand, they increased with an increase in radio frequency (RF) power and were the highest at RF power of 200 W. A smooth surface was obtained on the single-crystalline 4H-SiC after reactive ion etching at NF{sub 3}/Ar gas pressure of 2 Pa and addition of Ar to NF{sub 3} plasma increased the smoothness of SiC surface. Scanning electron microscopy observation revealed that the number of pillars decreased with an increase in the Ar-concentration in the NF{sub 3}/Ar mixture gas. The roughness factor (R{sub a}) values were decreased from 51.5 nm to 25.5 nm for the As-cut SiC, from 0.25 nm to 0.20 nm for the Epi-SiC, from 5.0 nm to 0.7 nm for the Si-face mirror-polished SiC, and from 0.20 nm to 0.16 nm for the C-face mirror-polished SiC by adding 60% Ar to the NF{sub 3} gas. Both the R{sub a} values of the Epi- and the C-face mirror-polished wafer surfaces etched using the NF{sub 3}/Ar (40:60) plasma were similar to that treated with mirror polishing, so-called the Catalyst-Referred Etching (CARE) method, with which the lowest roughness of surface was obtained among the chemical mirror polishing methods. Etching duration for smoothing the single-crystalline SiC surface using its treatment was one third of that with the CARE method.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Thermal chemistry of the Cu-KI5 atomic layer deposition precursor on a copper surface

The thermal chemistry of a Cu(I) ketoiminate complex, Cu-KI5, resulting from the modification of the known Air Products CupraSelect{sup ®} copper CVD precursor Cu(hfac)(tmvs) designed to tether the two ligands via an isopropoxide linker, was studied under ultrahigh vacuum on a Cu(110) single-crystal surface by using a combination of temperature programmed desorption (TPD) and x-ray photoelectron spectroscopy. Adsorption at low temperatures was determined to take place via the displacement of the vinyl ligand by the surface. Molecular desorption was seen at 210 K, and the evolution of Cu(II)-KI5{sub 2} was established to take place at 280 K, presumably from a disproportionation reaction that also leads to the deposition of Cu(0). Other sets of desorption products were seen at 150, 250, and 430 K, all containing copper atoms and small organic moieties with molecular masses below 100 amu. The latter TPD peak in particular indicates significant fragmentation of the ligands, likely at the C–N bond that holds the vinylsilane-isopropoxide moiety tethered to the ketoimine fragment, and possibly also at the union between the vinylsilane and the alkoxide linker. The 430 K temperature measured for this chemistry may set an upper limit for clean Cu film deposition, but since reactivity on the surface was also found to be inhibited at higher surface coverages, it may be delayed to higher temperatures under atomic layer deposition conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Infrared spectroscopy study of adsorption and photodecomposition of formic acid on reduced and defective rutile TiO{sub 2} (110) surfaces

Adsorption and photodecomposition of formic acid on rutile TiO{sub 2} (110) have been investigated with infrared reflection–absorption spectroscopy (IRRAS) employing p- and s-polarized light along the [001] and [11{sup ¯}0] crystal directions. The single crystal surfaces were prepared either by sputtering and annealing in ultrahigh vacuum (UHV) to obtain a reduced surface (r-TiO{sub 2}), or by sputtering without annealing to create a rough, highly defective surface (sp-TiO{sub 2}). Results are compared with corresponding measurements on rutile nanocrystals performed in synthetic air. IRRAS spectra obtained on r-TiO{sub 2} and rutile nanocrystals are very similar, and show that in both cases formic acid dissociates and is predominately adsorbed as a bridging bidentate formate species, and that the formate adsorption structure on the nanocrystals is dominated by interactions with majority (110) surfaces. In contrast, the IRRAS spectra on sp-TiO{sub 2} are different, with only minor spectral features associated with (110) surfaces and lost azimuthal symmetry, both of which imply changed adsorption geometry due to bonding to low-coordinated Ti atoms with lower valences. The UV-induced rate of formate photodecomposition is about 30 times higher on rutile nanocrystals in synthetic air compared with sp-TiO{sub 2} under UHV conditions, and even larger than on r-TiO{sub 2}. These differences are explained by the lack of oxygen and limited hydroxyl coverage under UHV conditions. The difference in reactivity between the r-TiO{sub 2} and sp-TiO{sub 2} surfaces is attributed to a high concentration of strongly bonded bridging bidentate formate species on the (110) surface, which lowers its reactivity. The results point to a pressure gap where the availability of molecular oxygen and the hydroxyl concentration limit the photoreactivity in UHV leading to an almost 20-fold decrease of the formate degradation rate in UHV. In contrast, the structure represented by the single crystal (110) surface is shown to capture the essential structural properties, which dictates the formic acid adsorption and adsorption structure of rutile nanocrystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization

Atomic layer deposition was used to grow epitaxial layers of anatase (001) TiO{sub 2} on the surface of SrTiO{sub 3} (100) crystals with a 3% lattice mismatch. The epilayers grow as anatase (001) as confirmed by x-ray diffraction. Atomic force microscope images of deposited films showed epitaxial layer-by-layer growth up to about 10 nm, whereas thicker films, of up to 32 nm, revealed the formation of 2–5 nm anatase nanocrystallites oriented in the (001) direction. The anatase epilayers were used as substrates for dye sensitization. The as received strontium titanate crystal was not sensitized with a ruthenium-based dye (N3) or a thiacyanine dye (G15); however, photocurrent from excited state electron injection from these dyes was observed when adsorbed on the anatase epilayers. These results show that highly ordered anatase surfaces can be grown on an easily obtained substrate crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Growth mechanism and optical properties of Ti thin films deposited onto fluorine-doped tin oxide glass substrate

In this work, a detailed study of the influence of the thickness on the morphological and optical properties of titanium (Ti) thin films deposited onto rough fluorine-doped tin oxide glass by d.c. magnetron sputtering is carried out. The films were characterized by several methods for composition, crystallinity, morphology, and optical properties. Regardless of the deposition time, all the studied Ti films of 400, 1500, 2000, and 2500 nm in thickness were single crystalline in the α-Ti phase and also very similar to each other with respect to composition. Using the atomic force microscopy (AFM) technique, the authors analyzed the roughness evolution of the Ti films characteristics as a function of the film thickness. By applying the dynamic scaling theory to the AFM images, a steady growth roughness exponent α = 0.72 ± 0.02 and a dynamic growth roughness exponent β = 0.22 ± 0.02 were determined. The value of α and β are consistent with nonlinear growth model incorporating random deposition with surface diffusion. Finally, measuring the reflection spectra of the samples by a spectrophotometer in the spectral range of 300–1100 nm allowed us to investigate the optical properties. The authors observed the increments of the reflection of Ti films with thickness, which by employing the effective medium approximation theory showed an increase in thickness followed by an increase in the volume fraction of metal.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Molecular beam epitaxy growth of SnO{sub 2} using a tin chemical precursor

The authors report on the development of a molecular beam epitaxy approach for atomic layer controlled growth of phase-pure, single-crystalline epitaxial SnO{sub 2} films with scalable growth rates using a highly volatile precursor (tetraethyltin) for tin and rf-oxygen plasma for oxygen. Smooth, epitaxial SnO{sub 2} (101) films on r-sapphire (101{sup ¯}2) substrates were grown as a function of tin precursor flux and substrate temperatures between 300 and 900 °C. Three distinct growth regimes were identified where SnO{sub 2} films grew in a reaction-, flux-, and desorption-limited mode, respectively, with increasing substrate temperature. In particular, with increasing tin flux, the growth rates were found to increase and then saturate indicating any excess tin precursor desorbs above a critical beam equivalent pressure of tin precursor. Important implications of growth kinetic behaviors on the self-regulating stoichiometric growth of perovskite stannates are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films

X-ray photoelectron spectroscopy (XPS) compositional analyses of materials that have been air exposed typically require ion etching in order to remove contaminated surface layers. However, the etching step can lead to changes in sample surface and near-surface compositions due to preferential elemental sputter ejection and forward recoil implantation; this is a particular problem for metal/gas compounds and alloys such as nitrides and oxides. Here, the authors use TiN as a model system and compare XPS analysis results from three sets of polycrystalline TiN/Si(001) films deposited by reactive magnetron sputtering in a separate vacuum chamber. The films are either (1) air-exposed for ≤10 min prior to insertion into the ultrahigh-vacuum (UHV) XPS system; (2) air-exposed and subject to ion etching, using different ion energies and beam incidence angles, in the XPS chamber prior to analysis; or (3) Al-capped in-situ in the deposition system prior to air-exposure and loading into the XPS instrument. The authors show that thin, 1.5–6.0 nm, Al capping layers provide effective barriers to oxidation and contamination of TiN surfaces, thus allowing nondestructive acquisition of high-resolution core-level spectra representative of clean samples, and, hence, correct bonding assignments. The Ti 2p and N 1s satellite features, which are sensitive to ion bombardment, exhibit high intensities comparable to those obtained from single-crystal TiN/MgO(001) films grown and analyzed in-situ in a UHV XPS system and there is no indication of Al/TiN interfacial reactions. XPS-determined N/Ti concentrations acquired from Al/TiN samples agree very well with Rutherford backscattering and elastic recoil analysis results while ion-etched air-exposed samples exhibit strong N loss due to preferential resputtering. The intensities and shapes of the Ti 2p and N 1s core level signals from Al/TiN/Si(001) samples do not change following long-term (up to 70 days) exposure to ambient conditions, indicating that the thin Al capping layers provide stable surface passivation without spallation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

A key aspect of single crystal diamond growth via microwave plasma chemical vapor deposition is in-process control of the local plasma–substrate environment, that is, plasma gas phase concentrations of activated species at the plasma boundary layer near the substrate surface. Emission spectra of the plasma relative to the diamond substrate inside the microwave plasma reactor chamber have been analyzed via optical emission spectroscopy. The spectra of radical species such as CH, C{sub 2}, and H (Balmer series) important for diamond growth were identified and analyzed. The emission intensities of these electronically excited species were found to be more dependent on operating pressure than on microwave power. Plasma gas temperatures were calculated from measurements of the C{sub 2} Swan band (d{sup 3}Π → a{sup 3}Π transition) system. The plasma gas temperature ranges from 2800 to 3400 K depending on the spatial location of the plasma ball, microwave power and operating pressure. Addition of Ar into CH{sub 4}+H{sub 2} plasma input gas mixture has little influence on the Hα, Hβ, and Hγ intensities and single-crystal diamond growth rates.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Epitaxial growth of tungsten layers on MgO(001)

Smooth single crystal W(001) layers were grown on MgO(001) substrates by magnetron sputtering at 900 °C. X-ray diffraction ω–2θ scans, ω-rocking curves, pole figures, and reciprocal space maps indicate a 45°-rotated epitaxial relationship: (001){sub W}‖(001){sub MgO} and [010]{sub W}‖[110]{sub MgO}, and a relaxed lattice constant of 3.167 ± 0.001 nm. A residual in-plane biaxial compressive strain is primarily attributed to differential thermal contraction after growth and decreases from −0.012 ± 0.001 to −0.001 ± 0.001 with increasing layer thickness d = 4.8–390 nm, suggesting relaxation during cooling by misfit dislocation growth through threading dislocation glide. The in-plane x-ray coherence length increases from 3.4 to 33.6 nm for d = 4.8–390 nm, while the out-of-plane x-ray coherence length is identical to the layer thickness for d ≤ 20 nm, but is smaller than d for d ≥ 49.7 nm, indicating local strain variations along the film growth direction. X-ray reflectivity analyses indicate that the root-mean-square surface roughness increases from 0.50 ± 0.05 to 0.95 ± 0.05 nm for d = 4.8–19.9 nm, suggesting a roughness exponent of 0.38, but remains relatively constant for d > 20 nm with a roughness of 1.00 ± 0.05 nm at d = 47.9 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Recommended values of clean metal surface work functions

A critical review of the experimental literature for measurements of the work functions of clean metal surfaces of single-crystals is presented. The tables presented include all results found for low-index crystal faces except cases that were known to be contaminated surfaces. These results are used to construct a recommended value of the work function for each surface examined, along with an uncertainty estimate for that value. The uncertainties are based in part on the error distribution for all measured work functions in the literature, which is included here. The metals included in this review are silver (Ag), aluminum (Al), gold (Au), copper (Cu), iron (Fe), iridium (Ir), molybdenum (Mo), niobium (Nb), nickel (Ni), palladium (Pd), platinum (Pt), rhodium (Rh), ruthenium (Ru), tantalum (Ta), and tungsten (W)

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Sputtering of silicon and glass substrates with polyatomic molecular ion beams generated from ionic liquids

The effect of irradiating 1-ethyl-3-methylimidazolium positive (EMIM{sup +}) or dicyanamide negative (DCA{sup –}) ion beams using an ionic liquid ion source was characterized concerning its sputtering properties for single crystalline Si(100) and nonalkaline borosilicate glass substrates. The irradiation of the DCA{sup –} ion beam onto the Si substrate at an acceleration voltage of 4 and 6 kV exhibited detectable sputtered depths greater than a couple of nanometers with an ion fluence of only 1 × 10{sup 15} ions/cm{sup 2}, while the EMIM{sup +} ion beam produced the same depths with an ion fluence 5 × 10{sup 15} ions/cm{sup 2}. The irradiation of a 4 kV DCA{sup –} ion beam at a fluence of 1 × 10{sup 16} ions/cm{sup 2} also yields large etching depths in Si substrates, corresponding to a sputtering yield of Si/DCA{sup – }= 10, and exhibits a smoothed surface roughness of 0.05 nm. The interaction between DCA{sup –} and Si likely causes a chemical reaction that relates to the high sputtering yield and forms an amorphous C-N capping layer that results in the smooth surface. Moreover, sputtering damage by the DCA{sup –} irradiation, which was estimated by Rutherford backscattering spectroscopy with the channeling technique, was minimal compared to Ar{sup +} irradiation at the same condition. In contrast, the glass substrates exhibited no apparent change in surface roughnesses when sputtered by the DCA{sup –} irradiation compared to the unirradiated glass substrates.

42 ENGINEERING↗
DOE OSTI2016

Atomic bonding effects in annular dark field scanning transmission electron microscopy. I. Computational predictions

Annular dark field scanning transmission electron microscopy (ADF-STEM) image simulations were performed for zone-axis-oriented light-element single crystals, using a multislice method adapted to include charge redistribution due to chemical bonding. Examination of these image simulations alongside calculations of the propagation of the focused electron probe reveal that the evolution of the probe intensity with thickness exhibits significant sensitivity to interatomic charge transfer, accounting for observed thickness-dependent bonding sensitivity of contrast in all ADF-STEM imaging conditions. Because changes in image contrast relative to conventional neutral atom simulations scale directly with the net interatomic charge transfer, the strongest effects are seen in crystals with highly polar bonding, while no effects are seen for nonpolar bonding. Although the bonding dependence of ADF-STEM image contrast varies with detector geometry, imaging parameters, and material temperature, these simulations predict the bonding effects to be experimentally measureable.

42 ENGINEERING↗