X-Ray Scattering and Electron Microscopy Characterization
This research added to the understanding of p-type activation in GaN vertical transistors for power applications by identifying key defects which inhibit p-type activation. We also developed an approach to eliminate such defects with the appropriate annealing treatments. Additionally we addressed the limitations of GaN substrates used in the production of these devices and exploited the non-uniform distribution of substrate defects to better understand the relationship between device performance and defect density. Through this work, we also established how irregularities – step bunching and haze formation – during epitaxial growth are related to defects in the underlying substrates. Our charter was to work with several other teams to determine connections between defects and performance of GaN-based vertical transistors and have several presentations and publications as well as manuscripts and follow-up collaborations. The research at UCLA supported two full graduate students, one of whom is graduating this summer as well as three undergraduate students.