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At least 1,423 records · Page 79

Bistable and Multi-Domain States of α-Fe/(PrDy)(FeCo)B Ferromagnetic Microwires

In this paper, we obtained α-Fe(50 at %)(PrDy)(FeCo)B(48 at %) microwires by extraction of a hanging drop of the (PrDy)(FeCo)B melt in the electron beam. A single microwire with a diameter of 50 μm and a length of 0.8–6 mm and with an amorphous (PrDy)(FeCo)B content of ~48% and a polycrystalline α‑Fe phase of ~52% is shown to have a rectangular narrow magnetic hysteresis loop and, accordingly, a bistable state with a switching field of ~100 Oe. Shortening the wire to ~0.6 mm leads to a sharp deviation from the loop rectangularity and a decrease in the slope of the dependence of magnetization on the field and coercive force to 20 Oe. In the near-surface layers consisting of an amorphous phase (PrDy)(FeCo)B, oriented regions of reverse magnetization are observed. The role of the magnetic dipole interaction in the formation of the magnetic hysteresis loop of chaotic ensembles of microwires with various compositions is discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Generation of microwave oscillations in a superconducting tunnel mesa-structure with a ferromagnetic insulator interlayer

Spin-polarized current in thin-film tunnel mesa-structures formed by epitaxial cuprate superconducting (YBa{sub 2}Cu{sub 3}O{sub 7–δ}) and manganite (LaMnO{sub 3}) films and an upper superconducting Au–Nb bilayer is studied experimentally. Intrinsic narrow-band generation in the microwave range is reported. Its frequency is tuned by the bias voltage and an external magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Final Report: Stability and Novel Properties of Magnetic Materials and Ferromagnet / Insulator Interfaces

We report investigations of the synthesis, structure, and properties of new materials for spintronic applications integrated onto silicon substrates. Our primary focus is materials with very high, negative, intrinsic spin polarization of the density of states at the Fermi level. We have developed a new synthesis method for Fe 3 O 4 thin films through selective oxidation of Fe, resulting in smooth, low-defect density films. We have synthesized Fe4N films and shown that they preferentially oxidize to Fe 3 O 4 . When integrated into magnetic tunnel junctions consisting of Fe4N / AlOx / Fe, oxidation at the Fe4N / AlOx interface creates Fe 3 O 4 , leading to negative tunneling magnetoresistance (TMR). Oxidation of Fe in nominally symmetric CoFe / AlOx / CoFe also produces Fe 3 O 4 and negative TMR under selected oxidation conditions.

36 MATERIALS SCIENCE↗

Coexisting Multiple Martensites in Ni 57-x Mn 21+x Ga 22 Ferromagnetic Shape Memory Alloys: Crystal Structure and Phase Transition

A comprehensive study of the crystal structure and phase transition as a function of temperature and composition in Ni 57–x Mn 21+x Ga 22 (x = 0, 2, 4, 5.5, 7, 8) (at. %) magnetic shape memory alloys was performed by a temperature-dependent synchrotron X-ray diffraction technique and transmission electron microscopy. A phase diagram of this Ni 57–x Mn 21+x Ga 22 alloy system was constructed. The transition between coexisting multiple martensites with monoclinic and tetragonal structures during cooling was observed in the Ni 51.5 Mn 26.5 Ga 22 (x = 5.5) alloy, and it was found that 5M + 7M multiple martensites coexist from 300 K to 160 K and that 5M + 7M + NM multiple martensites coexist between 150 K and 100 K. The magnetic-field-induced transformation from 7M martensite to NM martensite at 140 K where 5M + 7M + NM multiple martensites coexist before applying the magnetic field was observed by in situ neutron diffraction experiments. The present study is instructive for understanding the phase transition between coexisting multiple martensites under external fields and may shed light on the design of novel functional properties based on such phase transitions.

36 MATERIALS SCIENCE↗