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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Radiation and porosity effects on the magnetohydrodynamic flow near a vertical plate that applies shear stress to the fluid with mass diffusion

This article studies the radiation and porosity effects on the unsteady magnetohydrodynamic free convection flow of an incompressible viscous fluid past an infinite vertical plate that applies a shear stress f(t) to the fluid. Conjugate phenomenon of heat and mass transfer is considered. General solutions of the dimensionless governing equations along with imposed initial and boundary conditions are determined using Laplace transform technique. The solution of velocity is presented as a sum of mechanical and non mechanical parts. These solutions satisfy all imposed initial and boundary conditions and reduce to some known solutions from the literature as special cases. The results for embedded parameters are shown graphically. Numerical results for skin friction, Nusselt number and Sherwood number are computed and presented in tabular forms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

We have investigated effects of the vertical scaling on electrical properties in extremely thin-body InAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs). It is found that the body thickness (T{sub body}) scaling provides better short channel effect (SCE) control, whereas the T{sub body} scaling also causes the reduction of the mobility limited by channel thickness fluctuation (δT{sub body}) scattering (μ{sub fluctuation}). Also, in order to achieve better SCEs control, the thickness of InAs channel layer (T{sub channel}) scaling is more favorable than the thickness of MOS interface buffer layer (T{sub buffer}) scaling from a viewpoint of a balance between SCEs control and μ{sub fluctuation} reduction. These results indicate necessity of quantum well channel structure in InAs-OI MOSFETs and these should be considered in future transistor design.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation of the GaN-on-GaAs interface for vertical power device applications

GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

GaN-based vertical-cavity laser performance improvements using tunnel-junction-cascaded active regions

This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410 nm vertical-cavity surface-emitting laser which enables the repeated use of carriers for light generation (carrier recycling). While the number of quantum wells remains unchanged, the tunnel junction eliminates absorption caused by the non-uniform MQW carrier distribution. The thermal resistance drops and the excess bias lead to a surprisingly small rise in self-heating.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Vertically stratified two-phase flow in a curved channel: Insights from a domain perturbation analysis

In this work, we investigate the fully developed flow field of two vertically stratified fluids (one phase flowing above the other) in a curved channel of rectangular cross section. The domain perturbation technique is applied to obtain an analytical solution in the asymptotic limit of low Reynolds numbers and small curvature ratios (the ratio of the width of the channel to its radius of curvature). The accuracy of this solution is verified by comparison with numerical simulations of the nonlinear equations. The flow is characterized by helical vortices within each fluid, which are driven by centrifugal forces. The number of vortices and their direction of circulation varies with the parameters of the system (the volume fraction, viscosity ratio, and Reynolds numbers). We identify nine distinct flow patterns and organize the parameter space into corresponding flow regimes. We show that the fully developed interface between the fluids is not horizontal, in general, but is deformed by normal stresses associated with the circulatory flow. The results are especially significant for flows in microchannels, where the Reynolds numbers are small. The mathematical results in this paper include an analytical solution to two coupled biharmonic partial differential equations; these equations arise in two-phase, two-dimensional Stokes flows.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Anomalous lasing of high-speed 850 nm InGaAlAs oxide-confined vertical-cavity surface-emitting lasers with a large negative gain-to-cavity wavelength detuning

The impact of a large negative quantum well gain-to-cavity etalon wavelength detuning on the static and dynamic characteristics of 850 nm InGaAlAs high-speed oxide-confined vertical-cavity surface-emitting lasers (VCSELs) was investigated. Three distinct lasing regimes were revealed in large square aperture (≥7 μm per side) devices with large detuning including: (1) an anomalous lasing via higher order Hermite–Gaussian modes at low forward bias current; (2) lasing via the lowest order Hermite–Gaussian modes at high bias current; and (3) simultaneous lasing via both types of transverse modes at intermediate bias currents. In contrast to conventional multimode VCSELs a two-resonance modulation response was observed for the case of co-lasing via multiple transverse modes with high spectral separation. The reduction in the oxide aperture area resulted in classical lasing via the lowest order modes with a conventional single-resonance frequency response.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Compact electro-absorption modulator integrated with vertical-cavity surface-emitting laser for highly efficient millimeter-wave modulation

We demonstrate a compact electro-absorption slow-light modulator laterally-integrated with an 850 nm vertical-cavity surface-emitting laser (VCSEL), which enables highly efficient millimeter-wave modulation. We found a strong leaky travelling wave in the lateral direction between the two cavities via widening the waveguide width with a taper shape. The small signal response of the fabricated device shows a large enhancement of over 55 dB in the modulation amplitude at frequencies beyond 35 GHz; thanks to the photon-photon resonance. A large group index of over 150 in a Bragg reflector waveguide enables the resonance at millimeter wave frequencies for 25 μm long compact modulator. Based on the modeling, we expect a resonant modulation at a higher frequency of 70 GHz. The resonant modulation in a compact slow-light modulator plays a significant key role for high efficient narrow-band modulation in the millimeter wave range far beyond the intrinsic modulation bandwidth of VCSELs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Graphene vertical hot-electron terahertz detectors

We propose and analyze the concept of the vertical hot-electron terahertz (THz) graphene-layer detectors (GLDs) based on the double-GL and multiple-GL structures with the barrier layers made of materials with a moderate conduction band off-set (such as tungsten disulfide and related materials). The operation of these detectors is enabled by the thermionic emissions from the GLs enhanced by the electrons heated by incoming THz radiation. Hence, these detectors are the hot-electron bolometric detectors. The electron heating is primarily associated with the intraband absorption (the Drude absorption). In the frame of the developed model, we calculate the responsivity and detectivity as functions of the photon energy, GL doping, and the applied voltage for the GLDs with different number of GLs. The detectors based on the cascade multiple-GL structures can exhibit a substantial photoelectric gain resulting in the elevated responsivity and detectivity. The advantages of the THz detectors under consideration are associated with their high sensitivity to the normal incident radiation and efficient operation at room temperature at the low end of the THz frequency range. Such GLDs with a metal grating, supporting the excitation of plasma oscillations in the GL-structures by the incident THz radiation, can exhibit a strong resonant response at the frequencies of several THz (in the range, where the operation of the conventional detectors based on A{sub 3}B{sub 5} materials, in particular, THz quantum-well detectors, is hindered due to a strong optical phonon radiation absorption in such materials). We also evaluate the characteristics of GLDs in the mid- and far-infrared ranges where the electron heating is due to the interband absorption in GLs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thermal conductivity of vertically aligned carbon nanotube arrays: Growth conditions and tube inhomogeneity

The thermal conductivity of vertically aligned carbon nanotube arrays (VACNTAs) grown on silicon dioxide substrates via chemical vapor deposition is measured using a 3ω technique. For each sample, the VACNTA layer and substrate are pressed to a heating line at varying pressures to extract the sample's thermophysical properties. The nanotubes' structure is observed via transmission electron microscopy and Raman spectroscopy. The presence of hydrogen and water vapor in the fabrication process is tuned to observe the effect on measured thermal properties. The presence of iron catalyst particles within the individual nanotubes prevents the array from achieving the overall thermal conductivity anticipated based on reported measurements of individual nanotubes and the packing density.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Control of emitted light polarization in a 1310 nm dilute nitride spin-vertical cavity surface emitting laser subject to circularly polarized optical injection

We experimentally demonstrate the control of the light polarization emitted by a 1310 nm dilute nitride spin-Vertical Cavity Surface Emitting Laser (VCSEL) at room temperature. This is achieved by means of a combination of polarized optical pumping and polarized optical injection. Without external injection, the polarization of the optical pump controls that of the spin-VCSEL. However, the addition of the externally injected signal polarized with either left- (LCP) or right-circular polarization (RCP) is able to control the polarization of the spin-VCSEL switching it at will to left- or right-circular polarization. A numerical model has been developed showing a very high degree of agreement with the experimental findings.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors

In this work, the characteristics of vertical tunneling field-effect transistors based on graphene (VTGFET) and graphene nanoribbon heterostructure (VTGNRFET) in the presence of disorder are theoretically investigated. An statistical analysis based on an atomistic tight-binding model for the electronic bandstructure along with the non-equilibrium Green's function formalism are employed. We study the dependence of the averaged density of states, transmission probability, on- and off-state conductances, on/off conductance ratio, and transfer characteristics on the substrate induced potential fluctuations and vacancies. In addition, the variabilities of the device characteristics due to the presence of disorder are evaluated. It can be inferred from the results that while introducing vacancies cause a relatively modest suppression of the transmission probability, potential fluctuations lead to the significant increase of transmission probability and conductance of the device. Moreover, the results show that the transport properties of VTGFET are more robust against disorder compared to VTGNRFET.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

A small-angle x-ray scattering system with a vertical layout

A small-angle x-ray scattering (SAXS) system with a vertical layout (V-SAXS) has been designed and constructed for in situ detection on nanostructures, which is well suitable for in situ study on self-assembly of nanoparticles at liquid interface and polymer processing. A steel-tower frame on a reinforced basement is built as the supporting skeleton for scattering beam path and detector platform, ensuring the system a high working stability and a high operating accuracy. A micro-focus x-ray source combining parabolic three-dimensional multi-layer mirror and scatteringless collimation system provides a highly parallel beam, which allows us to detect the very small angle range. With a sample-to-detector distance of 7 m, the largest measurable length scale is 420 nm in real space. With a large sample zone, it is possible to install different experimental setups such as film stretching machine, which makes the system perfect to follow the microstructures evolution of materials during processing. The capability of the V-SAXS on in situ study is tested with a drying experiment of a free latex droplet, which confirms our initial design.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Design of set-point weighting PI{sup λ} + D{sup μ} controller for vertical magnetic flux controller in Damavand tokamak

In this paper, a simple method is presented for tuning weighted PI{sup λ} + D{sup μ} controller parameters based on the pole placement controller of pseudo-second-order fractional systems. One of the advantages of this controller is capability of reducing the disturbance effects and improving response to input, simultaneously. In the following sections, the performance of this controller is evaluated experimentally to control the vertical magnetic flux in Damavand tokamak. For this work, at first a fractional order model is identified using output-error technique in time domain. For various practical experiments, having desired time responses for magnetic flux in Damavand tokamak, is vital. To approach this, at first the desired closed loop reference models are obtained based on generalized characteristic ratio assignment method in fractional order systems. After that, for the identified model, a set-point weighting PI{sup λ} + D{sup μ} controller is designed and simulated. Finally, this controller is implemented on digital signal processor control system of the plant to fast/slow control of magnetic flux. The practical results show appropriate performance of this controller.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Circular polarization switching and bistability in an optically injected 1300 nm spin-vertical cavity surface emitting laser

We report the experimental observation of circular polarization switching (PS) and polarization bistability (PB) in a 1300 nm dilute nitride spin-vertical cavity surface emitting laser (VCSEL). We demonstrate that the circularly polarized optical signal at 1300 nm can gradually or abruptly switch the polarization ellipticity of the spin-VCSEL from right-to-left circular polarization and vice versa. Moreover, different forms of PS and PB between right- and left-circular polarizations are observed by controlling the injection strength and the initial wavelength detuning. These results obtained at the telecom wavelength of 1300 nm open the door for novel uses of spin-VCSELs in polarization sensitive applications in future optical systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V{sub GS} = 0 V and L{sub go} = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Development of vertically aligned ZnO-nanowires scintillators for high spatial resolution x-ray imaging

Newly designed scintillator of (0001)-oriented ZnO vertical nanowires (vnws) for X-ray imaging was prepared on a Ga-doped ZnO/soda-lime glass by electrodeposition, and the light emission feature was estimated in a synchrotron radiation facility. The ZnO-vnws scintillator revealed a strong light emission and improved resolution on CMOS image compared with that for the ZnO-layer scintillator, although the light emission performance was deteriorated in comparison to the Lu{sub 3}Al{sub 5}O{sub 12:}Ce{sup 3+}. The light emission property closely related to the nanostructure and the resultant photoluminescence characteristic.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

A concept for electrically pumped vertical cavity surface emitting lasers (VCSEL) for emission wavelength beyond 2 μm is presented. This concept integrates type-II quantum wells into InP-based VCSELs with a buried tunnel junction as current aperture. The W-shaped quantum wells are based on the type-II band alignment between GaInAs and GaAsSb. The structure includes an epitaxial GaInAs/InP and an amorphous AlF{sub 3}/ZnS distributed Bragg reflector as bottom and top (outcoupling) mirror, respectively. Continuous-wave operation up to 10 °C at a wavelength of 2.49 μm and a peak output power of 400 μW at −18 °C has been achieved. Single-mode emission with a side-mode suppression ratio of 30 dB for mesa diameters up to 14 μm is presented. The long emission wavelength and current tunability over a wavelength range of more than 5 nm combined with its single-mode operation makes this device ideally suited for spectroscopy applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Carrier transfer in vertically stacked quantum ring-quantum dot chains

The interplay between structural properties and charge transfer in self-assembled quantum ring (QR) chains grown by molecular beam epitaxy on top of an InGaAs/GaAs quantum dot (QD) superlattice template is analyzed and characterized. The QDs and QRs are vertically stacked and laterally coupled as well as aligned within each layer due to the strain field distributions that governs the ordering. The strong interdot coupling influences the carrier transfer both along as well as between chains in the ring layer and dot template structures. A qualitative contrast between different dynamic models has been developed. By combining temperature and excitation intensity effects, the tuning of the photoluminescence gain for either the QR or the QD mode is attained. The information obtained here about relaxation parameters, energy scheme, interlayer and interdot coupling resulting in creation of 1D structures is very important for the usage of such specific QR–QD systems for applied purposes such as lasing, detection, and energy-harvesting technology of future solar panels.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗